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11. 发明申请

US20050274968A1 Lens structures suitable for use in image sensors and method for making the same 有权
标题翻译：适用于图像传感器的镜头结构及其制作方法
公开(公告)号：US20050274968A1
公开(公告)日：2005-12-15
申请号：US10982978
申请日：2004-11-05
申请人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
发明人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
IPC分类号： H01L21/00 , H01L27/146 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/22 , H01L29/227 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L33/00 , H01L47/02
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.
摘要翻译：图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

12. 发明授权

US07443005B2 Lens structures suitable for use in image sensors and method for making the same 有权
标题翻译：适用于图像传感器的镜头结构及其制作方法
公开(公告)号：US07443005B2
公开(公告)日：2008-10-28
申请号：US10982978
申请日：2004-11-05
申请人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Hsien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
发明人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Hsien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
IPC分类号： H01L29/78
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.
摘要翻译：图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

13. 发明授权

US07863067B2 Silicon substrate with reduced surface roughness 有权
标题翻译：具有降低表面粗糙度的硅衬底
公开(公告)号：US07863067B2
公开(公告)日：2011-01-04
申请号：US11686108
申请日：2007-03-14
申请人： Gwo-Yuh Shiau , Ming Chyi Liu , Tzu-Hsuan Hsu , Chia-Shiung Tsai
发明人： Gwo-Yuh Shiau , Ming Chyi Liu , Tzu-Hsuan Hsu , Chia-Shiung Tsai
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L27/1464 , H01L27/14683
摘要： The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dopant layer in the semiconductor substrate adjacent the second surface using a localized annealing process, and etching the dopant layer.
摘要翻译：本公开提供一种制造半导体器件的方法，包括提供包括第一表面和第二表面的半导体衬底，其中至少一个成像传感器位于第一表面附近，激活邻近第二表面的半导体衬底中的掺杂剂层使用局部退火工艺，并蚀刻掺杂剂层。

14. 发明授权

US07144773B1 Method for preventing trenching in fabricating split gate flash devices 有权
标题翻译：在制造分闸门闪光装置时防止开沟的方法
公开(公告)号：US07144773B1
公开(公告)日：2006-12-05
申请号：US11141902
申请日：2005-06-01
申请人： Shih-Chang Liu , Chi-Hsin Lo , Gwo-Yuh Shiau , Chia-Shiung Tsai
发明人： Shih-Chang Liu , Chi-Hsin Lo , Gwo-Yuh Shiau , Chia-Shiung Tsai
IPC分类号： H04L21/336 , H04L21/8242 , H04L29/788 , H04L29/76
CPC分类号： H01L21/76224 , H01L21/823481 , H01L27/115 , H01L27/11521
摘要： A method for forming a split gate flash device is provided. In one embodiment, a semiconductor substrate with a dielectric layer formed thereover is provided. A conductor layer is formed overlying the dielectric layer. A masking layer is deposited overlying the conductor layer. A light sensitive layer is formed overlying the masking layer. The light sensitive layer is patterned and etched to form a pattern of openings therein. The masking layer and the conductor layer are etched according to the pattern of openings in the light sensitive layer. The conductor layer is etched at the outer surface area between the conductor layer and the dielectric layer to form undercuts. The dielectric layer is etched to form a notch profile at the outer surface area between the conductor layer and the dielectric layer and portions of the substrate are etched to form a plurality of trenches. An isolation layer is filled over the plurality of trenches and the masking layer. The masking layer and portions of the conductor layer and isolation layer are etched away, wherein a portion of the isolation layer is preserved in the notch profile.
摘要翻译：提供了一种用于形成分离栅极闪光装置的方法。在一个实施例中，提供了其上形成介电层的半导体衬底。形成覆盖在电介质层上的导体层。掩蔽层沉积在导体层上。形成覆盖掩模层的光敏层。对感光层进行图案化和蚀刻以在其中形成开口图案。掩模层和导体层根据光敏层中的开口图案进行蚀刻。在导体层和电介质层之间的外表面区域处蚀刻导体层以形成底切。蚀刻电介质层以在导体层和电介质层之间的外表面区域形成切口轮廓，并且蚀刻衬底的部分以形成多个沟槽。隔离层填充在多个沟槽和掩蔽层上。掩模层和导体层和隔离层的部分被蚀刻掉，其中隔离层的一部分保留在凹口轮廓中。

15. 发明申请

US20070069328A1 SPLIT GATE FLASH DEVICES 审中-公开
标题翻译：分闸门闪存器件
公开(公告)号：US20070069328A1
公开(公告)日：2007-03-29
申请号：US11555712
申请日：2006-11-02
申请人： Shih-Chang Liu , Chi-Hsin Lo , Gwo-Yuh Shiau , Chia-Shiung Tsai
发明人： Shih-Chang Liu , Chi-Hsin Lo , Gwo-Yuh Shiau , Chia-Shiung Tsai
IPC分类号： H01L29/00
CPC分类号： H01L21/76224 , H01L21/823481 , H01L27/115 , H01L27/11521
摘要： A method for forming a split gate flash device is provided. In one embodiment, a semiconductor substrate with a dielectric layer formed thereover is provided. A conductor layer is formed overlying the dielectric layer. A masking layer is deposited overlying the conductor layer. A light sensitive layer is formed overlying the masking layer. The light sensitive layer is patterned and etched to form a pattern of openings therein. The masking layer and the conductor layer are etched according to the pattern of openings in the light sensitive layer. The conductor layer is etched at the outer surface area between the conductor layer and the dielectric layer to form undercuts. The dielectric layer is etched to form a notch profile at the outer surface area between the conductor layer and the dielectric layer and portions of the substrate are etched to form a plurality of trenches. An isolation layer is filled over the plurality of trenches and the masking layer. The masking layer and portions of the conductor layer and isolation layer are etched away, wherein a portion of the isolation layer is preserved in the notch profile.
摘要翻译：提供了一种用于形成分离栅极闪光装置的方法。在一个实施例中，提供了其上形成介电层的半导体衬底。形成覆盖在电介质层上的导体层。掩蔽层沉积在导体层上。形成覆盖掩模层的光敏层。对感光层进行图案化和蚀刻以在其中形成开口图案。掩模层和导体层根据光敏层中的开口图案进行蚀刻。在导体层和电介质层之间的外表面区域处蚀刻导体层以形成底切。蚀刻电介质层以在导体层和电介质层之间的外表面区域形成切口轮廓，并且蚀刻衬底的部分以形成多个沟槽。隔离层填充在多个沟槽和掩蔽层上。掩模层和导体层和隔离层的部分被蚀刻掉，其中隔离层的一部分保留在凹口轮廓中。

16. 发明申请

US20060275984A1 METHOD FOR PREVENTING TRENCHING IN FABRICATING SPLIT GATE FLASH DEVICES 有权
标题翻译：用于防止在制造分离栅格闪存器件中进行TRENCHING的方法
公开(公告)号：US20060275984A1
公开(公告)日：2006-12-07
申请号：US11141902
申请日：2005-06-01
申请人： Shih-Chang Liu , Chi-Hsin Lo , Gwo-Yuh Shiau , Chia-Shiung Tsai
发明人： Shih-Chang Liu , Chi-Hsin Lo , Gwo-Yuh Shiau , Chia-Shiung Tsai
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L21/76224 , H01L21/823481 , H01L27/115 , H01L27/11521
摘要： A method for forming a split gate flash device is provided. In one embodiment, a semiconductor substrate with a dielectric layer formed thereover is provided. A conductor layer is formed overlying the dielectric layer. A masking layer is deposited overlying the conductor layer. A light sensitive layer is formed overlying the masking layer. The light sensitive layer is patterned and etched to form a pattern of openings therein. The masking layer and the conductor layer are etched according to the pattern of openings in the light sensitive layer. The conductor layer is etched at the outer surface area between the conductor layer and the dielectric layer to form undercuts. The dielectric layer is etched to form a notch profile at the outer surface area between the conductor layer and the dielectric layer and portions of the substrate are etched to form a plurality of trenches. An isolation layer is filled over the plurality of trenches and the masking layer. The masking layer and portions of the conductor layer and isolation layer are etched away, wherein a portion of the isolation layer is preserved in the notch profile.
摘要翻译：提供了一种用于形成分离栅极闪光装置的方法。在一个实施例中，提供了其上形成介电层的半导体衬底。形成覆盖在电介质层上的导体层。掩蔽层沉积在导体层上。形成覆盖掩模层的光敏层。对感光层进行图案化和蚀刻以在其中形成开口图案。掩模层和导体层根据光敏层中的开口图案进行蚀刻。在导体层和电介质层之间的外表面区域处蚀刻导体层以形成底切。蚀刻电介质层以在导体层和电介质层之间的外表面区域形成切口轮廓，并且蚀刻衬底的部分以形成多个沟槽。隔离层填充在多个沟槽和掩蔽层上。掩模层和导体层和隔离层的部分被蚀刻掉，其中隔离层的一部分保留在凹口轮廓中。

17. 发明申请

US20100062611A1 Method and Apparatus for Thinning a Substrate 有权
标题翻译：减薄基板的方法和装置
公开(公告)号：US20100062611A1
公开(公告)日：2010-03-11
申请号：US12205269
申请日：2008-09-05
申请人： Ming Chyi Liu , Yao Fei Chuang , Martin Liu , Gwo-Yuh Shiau , Chia-Shiung Tsai
发明人： Ming Chyi Liu , Yao Fei Chuang , Martin Liu , Gwo-Yuh Shiau , Chia-Shiung Tsai
IPC分类号： H01L21/461
CPC分类号： H01L27/14698 , H01L21/30604 , H01L27/14636 , H01L27/1464 , H01L27/14643
摘要： Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件包括提供具有正面和背面的半导体衬底，其中在前侧形成有源或无源器件，旋转半导体衬底，并通过引入半导体衬底蚀刻半导体衬底的背面在衬底旋转的同时第一蚀刻剂，第一蚀刻剂包括R-COOH。

18. 发明申请

US20080237761A1 SYSTEM AND METHOD FOR ENHANCING LIGHT SENSITIVITY FOR BACKSIDE ILLUMINATION IMAGE SENSOR 审中-公开
标题翻译：用于增强背光照明传感器的光敏度的系统和方法
公开(公告)号：US20080237761A1
公开(公告)日：2008-10-02
申请号：US11695363
申请日：2007-04-02
申请人： Shih-Chi Fu , Chia-Shiung Tsai , Gwo-Yuh Shiau , Ming Chyi Liu , Feng-Jia Shiu , Tzu-Hsuan Hsu
发明人： Shih-Chi Fu , Chia-Shiung Tsai , Gwo-Yuh Shiau , Ming Chyi Liu , Feng-Jia Shiu , Tzu-Hsuan Hsu
IPC分类号： H01L31/0232
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/1464
摘要： A system and method for enhancing light sensitivity of a back-side illumination image sensor are described. An integrated circuit includes a substrate and an image sensor device comprising at least one transistor formed over a first surface of the substrate and a photosensitive region. A color filter is disposed over a second surface of the substrate opposite the first surface thereof. A micro-lens structure is disposed between the second surface of the substrate and the color filter.
摘要翻译：描述了用于提高背面照明图像传感器的光灵敏度的系统和方法。集成电路包括基板和图像传感器装置，该装置包括形成在基板的第一表面上的至少一个晶体管和光敏区域。滤色器设置在基板的与其第一表面相对的第二表面上。微透镜结构设置在基板的第二表面和滤色器之间。

19. 发明授权

US08048807B2 Method and apparatus for thinning a substrate 有权
标题翻译：减薄基板的方法和装置
公开(公告)号：US08048807B2
公开(公告)日：2011-11-01
申请号：US12205269
申请日：2008-09-05
申请人： Ming Chyi Liu , Yao Fei Chuang , Martin Liu , Gwo-Yuh Shiau , Chia-Shiung Tsai
发明人： Ming Chyi Liu , Yao Fei Chuang , Martin Liu , Gwo-Yuh Shiau , Chia-Shiung Tsai
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/14698 , H01L21/30604 , H01L27/14636 , H01L27/1464 , H01L27/14643
摘要： Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件包括提供具有正面和背面的半导体衬底，其中在前侧形成有源或无源器件，旋转半导体衬底，并通过引入半导体衬底蚀刻半导体衬底的背面在衬底旋转的同时第一蚀刻剂，第一蚀刻剂包括R-COOH。

20. 再颁专利

USRE44376E1 Silicon substrate with reduced surface roughness 有权
标题翻译：具有降低表面粗糙度的硅衬底
公开(公告)号：USRE44376E1
公开(公告)日：2013-07-16
申请号：US13117881
申请日：2011-05-27
申请人： Gwo-Yuh Shiau , Ming Chyi Liu , Tzu-Hsuan Hsu , Chia-Shiung Tsai
发明人： Gwo-Yuh Shiau , Ming Chyi Liu , Tzu-Hsuan Hsu , Chia-Shiung Tsai
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L27/1464 , H01L27/14683
摘要： The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dopant layer in the semiconductor substrate adjacent the second surface using a localized annealing process, and etching the dopant layer.
摘要翻译：本公开提供一种制造半导体器件的方法，包括提供包括第一表面和第二表面的半导体衬底，其中至少一个成像传感器位于第一表面附近，激活邻近第二表面的半导体衬底中的掺杂剂层使用局部退火工艺，并蚀刻掺杂剂层。

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