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11. 发明申请

US20080268581A1 Method of manufacturing thin film transistor substrate 失效
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US20080268581A1
公开(公告)日：2008-10-30
申请号：US12009253
申请日：2008-01-16
申请人： Hong-Kee Chin , Yu-Gwang Jeong , Sang-Gab Kim , Joo-Han Kim , Joo-Ae Youn , Min-Seok Oh , Jong-Hyun Choung , Seung-Ha Choi
发明人： Hong-Kee Chin , Yu-Gwang Jeong , Sang-Gab Kim , Joo-Han Kim , Joo-Ae Youn , Min-Seok Oh , Jong-Hyun Choung , Seung-Ha Choi
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method of manufacturing a TFT substrate includes: sequentially forming a transparent conductive layer and an opaque conductive layer on a substrate, patterning the transparent conductive layer and the opaque conductive layer by using a first mask to form a gate pattern including a pixel electrode, and forming a gate insulating layer and a semiconductor layer above the substrate. A contact hole is formed which exposes a portion of the pixel electrode and a semiconductor pattern using a second mask. A conductive layer is formed above the substrate and patterned to form a source/drain pattern including a drain electrode which overlaps a portion of the pixel electrode. Portions of the gate insulating layer and the opaque conductive layer above the pixel electrode are removed except a portion overlapping the drain electrode, by using a third mask.
摘要翻译：一种制造TFT基板的方法包括：在基板上依次形成透明导电层和不透明导电层，通过使用第一掩模对透明导电层和不透明导电层进行构图，形成包括像素电极的栅极图案，以及在基板上形成栅极绝缘层和半导体层。使用第二掩模形成露出一部分像素电极和半导体图案的接触孔。在衬底上形成导电层，并被图案化以形成包括与像素电极的一部分重叠的漏电极的源极/漏极图案。除了与漏电极重叠的部分之外，通过使用第三掩模除去栅极绝缘层和像素电极上方的不透明导电层的部分。

12. 发明申请

US20080081534A1 METHOD FOR FORMING METAL LINE AND METHOD FOR MANUFACTURING DISPLAY SUBSTRATE BY USING THE SAME 有权
标题翻译：用于形成金属线的方法和使用该方法制造显示衬底的方法
公开(公告)号：US20080081534A1
公开(公告)日：2008-04-03
申请号：US11862837
申请日：2007-09-27
申请人： Min-Seok Oh , Sang-Gab Kim , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Min-Seok Oh , Sang-Gab Kim , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01J9/12
CPC分类号： H01L21/32136 , G02F1/13439 , G02F2001/136295 , H01L21/02071 , H01L23/53223 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： In a method for forming a metal line, a first metal layer and a second metal layer are deposited on a substrate. The first metal layer includes aluminum, and the second metal layer includes molybdenum. A photoresist pattern having a line-shape is formed on the second metal layer. The second metal layer is etched with a chlorine-containing etching gas using the photoresist pattern as a mask. The first metal layer is then etched with a mixture of a chlorine-containing gas and nitrogen gas and/or a mixture of a chlorine-containing gas and argon gas as an etching gas. Impurities such as chlorine ions are removed from the base substrate after etching the first metal layer with a fluorine-containing gas, hydrogen gas, or water vapor. A method for manufacturing a display substrate is disclosed using the method for forming a metal line to form source, drain, and gate electrodes and gate lines.
摘要翻译：在金属线的形成方法中，在基板上沉积第一金属层和第二金属层。第一金属层包括铝，第二金属层包括钼。在第二金属层上形成具有线状的光致抗蚀剂图案。使用光致抗蚀剂图案作为掩模，用含氯蚀刻气体蚀刻第二金属层。然后用含氯气体和氮气和/或含氯气体和氩气的混合物的混合物蚀刻第一金属层作为蚀刻气体。在用含氟气体，氢气或水蒸气蚀刻第一金属层之后，从基底衬底去除诸如氯离子的杂质。公开了一种用于形成金属线以形成源极，漏极和栅电极和栅极线的方法，用于制造显示基板的方法。

13. 发明授权

US08643012B2 Display substrate and method for manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08643012B2
公开(公告)日：2014-02-04
申请号：US12952744
申请日：2010-11-23
申请人： Min-Seok Oh , Bong-Kyu Shin , Sang-Gab Kim , Eun-Guk Lee , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Min-Seok Oh , Bong-Kyu Shin , Sang-Gab Kim , Eun-Guk Lee , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/13439 , G02F2201/50
摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.
摘要翻译：形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案使用光致抗蚀剂图案作为掩模蚀刻钝化层，对光致抗蚀剂图案的表面进行不均匀的表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

14. 发明授权

US08273612B2 Display panel and method of manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US08273612B2
公开(公告)日：2012-09-25
申请号：US12981287
申请日：2010-12-29
申请人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
发明人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
摘要翻译：在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

15. 发明授权

US07758760B2 Thin film transistor array panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07758760B2
公开(公告)日：2010-07-20
申请号：US11544987
申请日：2006-10-06
申请人： Seung-Ha Choi , Min-Seok Oh , Hong-Kee Chin , Sang-Gab Kim , Yu-Gwang Jeong
发明人： Seung-Ha Choi , Min-Seok Oh , Hong-Kee Chin , Sang-Gab Kim , Yu-Gwang Jeong
IPC分类号： B44C1/22
CPC分类号： H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
摘要： A thin film transistor (TFT) array panel and method of manufacturing the same are provided. The method includes forming a semiconductor layer and an ohmic contact layer over a gate line, forming a conductive layer on the ohmic contact layer, forming a first photosensitive layer pattern on the conductive layer, etching the conductive layer using the first photosensitive layer pattern as an etching mask, etching the ohmic contact layer and the semiconductor layer by a fluorine-containing gas, a chloride-containing gas, and an oxygen (O2) gas using the first photosensitive layer pattern as an etching mask, removing the first photosensitive layer pattern to a predetermined thickness to form a second photosensitive layer pattern, and etching the conductive layer using the second photosensitive layer pattern as an etching mask to expose a part of the ohmic contact layer.
摘要翻译：提供薄膜晶体管（TFT）阵列面板及其制造方法。该方法包括在栅极线上形成半导体层和欧姆接触层，在欧姆接触层上形成导电层，在导电层上形成第一感光层图案，使用第一感光层图案蚀刻导电层，作为蚀刻掩模，使用第一感光层图案作为蚀刻掩模，通过含氟气体，含氯气体和氧（O 2）气蚀刻欧姆接触层和半导体层，将第一感光层图案去除预定厚度以形成第二感光层图案，并且使用第二感光层图案蚀刻导电层作为蚀刻掩模以暴露欧姆接触层的一部分。

16. 发明授权

US08642367B2 Thin film transistor having improved manufacturability and method for manufacturing a display panel containing same 失效
标题翻译：具有改进的可制造性的薄膜晶体管和用于制造包含它的显示面板的方法
公开(公告)号：US08642367B2
公开(公告)日：2014-02-04
申请号：US13042348
申请日：2011-03-07
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

17. 发明授权

US07982223B2 Display apparatus and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07982223B2
公开(公告)日：2011-07-19
申请号：US12372212
申请日：2009-02-17
申请人： Seung-Ha Choi , Min-Seok Oh , Sang-Gab Kim , Hong-Kee Chin , Yu-Gwang Jeong
发明人： Seung-Ha Choi , Min-Seok Oh , Sang-Gab Kim , Hong-Kee Chin , Yu-Gwang Jeong
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： H01L27/124 , G02F1/136286 , G02F2001/136222 , G02F2001/136295 , H01L27/1248 , H01L27/1288
摘要： In a display apparatus and a method of manufacturing the display apparatus, a first insulating layer having a trench and a second insulating layer having a via hole corresponding to the trench are formed on an array substrate. After forming a seed layer in the trench, a conductive layer is formed on the seed layer through a plating process, thereby forming the gate line, the gate electrode and the storage line accommodated in the trench and the via hole.
摘要翻译：在显示装置和显示装置的制造方法中，在阵列基板上形成具有沟槽的第一绝缘层和具有与沟槽对应的通路孔的第二绝缘层。在沟槽中形成晶种层之后，通过电镀工艺在晶种层上形成导电层，从而形成栅极线，栅极电极和容纳在沟槽和通孔中的存储线。

18. 发明申请

US20090152635A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL 有权
标题翻译：薄膜晶体管和制造显示面板的方法
公开(公告)号：US20090152635A1
公开(公告)日：2009-06-18
申请号：US12331361
申请日：2008-12-09
申请人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L29/78 , H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

19. 发明申请

US20080017884A1 DISPLAY SUBSTRATE, DISPLAY APPARATUS HAVING THE DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE DISPLAY APPARATUS 审中-公开
标题翻译：显示基板，具有显示基板的显示装置及制造显示装置的方法
公开(公告)号：US20080017884A1
公开(公告)日：2008-01-24
申请号：US11766329
申请日：2007-06-21
申请人： Chang-Oh Jeong , Sang-Gab Kim , Jun-Hyung Souk , Hong-Gyun Kim , In-Sun Hwang , Min-Seok Oh , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi , Hi-Kuk Lee , Shi-Yul Kim
发明人： Chang-Oh Jeong , Sang-Gab Kim , Jun-Hyung Souk , Hong-Gyun Kim , In-Sun Hwang , Min-Seok Oh , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi , Hi-Kuk Lee , Shi-Yul Kim
IPC分类号： H01L27/13 , H01L21/3205 , H01L23/48
CPC分类号： G02F1/133528 , G02F1/134336 , G02F2001/133548 , H01L27/12
摘要： A display apparatus includes a first substrate, a gate line formed on the first substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line formed on the semiconductor layer and including a source electrode, a drain electrode facing the source electrode, a first electrode electrically connected to the drain electrode, in a second substrate facing the first substrate, a second electrode formed on the second substrate, and a liquid crystal layer disposed between the first electrode and the second electrode. At least one of the first and second electrodes includes a plurality of line patterns to polarize incident light.
摘要翻译：显示装置包括第一基板，形成在第一基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，形成在半导体层上的数据线，并且包括源极面对源电极的漏电极，与漏电极电连接的第一电极，与第一衬底相对的第二衬底，形成在第二衬底上的第二电极，以及设置在第一电极和第二电极之间的液晶层电极。第一和第二电极中的至少一个包括使入射光偏振的多个线图案。

20. 发明授权

US08211797B2 Metal wiring layer and method of fabricating the same 有权
标题翻译：金属布线层及其制造方法
公开(公告)号：US08211797B2
公开(公告)日：2012-07-03
申请号：US12290594
申请日：2008-10-31
申请人： Dong-Ju Yang , Shin-Il Choi , Sang-Gab Kim , Min-Seok Oh , Hong-Kee Chin , Ki-Yeup Lee , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Dong-Ju Yang , Shin-Il Choi , Sang-Gab Kim , Min-Seok Oh , Hong-Kee Chin , Ki-Yeup Lee , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L21/44
CPC分类号： H01L23/535 , H01L21/743 , H01L27/1218 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： A metal wiring layer and a method of fabricating the metal wiring layer are provided. The method includes forming a dielectric layer on a substrate, forming a plurality of dielectric layer patterns and holes therein on the substrate by etching part of the dielectric layer, with a cross sectional area of the holes in the dielectric layer patterns decreasing with increasing distance away from the substrate and the holes exposing the substrate, forming a trench by etching a portion of the substrate exposed through the holes in the dielectric layer patterns, and forming a metal layer which fills the trench and the holes in the dielectric layer patterns. Thus, it is possible to prevent the occurrence of an edge build-up phenomenon by forming a metal layer in a plurality of holes in the dielectric layer patterns having a cross sectional area decreasing with increasing distance away from the substrate. Therefore, it is possible to prevent the transmittance of a liquid crystal layer from decreasing due to a failure to properly fill liquid crystal molecules in the liquid crystal layer, and thus to increase the quality of display.
摘要翻译：提供金属布线层和制造金属布线层的方法。该方法包括在衬底上形成电介质层，通过蚀刻介电层的一部分，在衬底上形成多个介电层图案和孔，电介质层图案中的孔的横截面积随距离的增加而减小从衬底和暴露衬底的孔，通过蚀刻通过介电层图案中的孔暴露的衬底的一部分形成沟槽，以及形成填充沟槽和介电层图案中的空穴的金属层。因此，可以通过在电介质层图案中的多个孔中形成金属层来防止边缘积聚现象的发生，该电介质层图案的横截面积随离开距衬底的距离的增加而减小。因此，可以防止液晶层的透射率由于不能适当地填充液晶层中的液晶分子而降低，从而提高显示质量。

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