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11. 发明授权

US07847604B2 Driving circuit for power semiconductor element including controlling circuit that provides control when detected voltage reaches predetermined voltage 有权
标题翻译：包括控制电路的功率半导体元件的驱动电路，当检测电压达到预定电压时，提供控制
公开(公告)号：US07847604B2
公开(公告)日：2010-12-07
申请号：US12442029
申请日：2008-01-17
申请人： Hiroo Fuma , Hiromichi Kuno , Satoshi Hirose , Naoyoshi Takamatsu
发明人： Hiroo Fuma , Hiromichi Kuno , Satoshi Hirose , Naoyoshi Takamatsu
IPC分类号： H03K3/00
CPC分类号： H02M1/08 , H03K17/0828 , H03K17/165 , H03K17/18 , H03K2217/0036
摘要： Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element (10) such as an IGBT and another element (20) to be paired are connected, the element (10) is driven by a driver (22), and a gate voltage is controlled by a control circuit (24). When the power semiconductor element is turned off, a comparator (26) detects that a voltage (Vak) of the element (20) is a prescribed voltage, the control circuit (24) switches gate resistance from low resistance to high resistance to suppress the surge voltage, and the switching loss is reduced. When the power semiconductor element is turned on, start up of the voltage (Vak) is detected, and the control circuit (24) switches the gate resistance from high resistance to low resistance after a prescribed time to suppress the surge voltage, and the switching loss is reduced.
摘要翻译：提供一种驱动电路，其抑制在切换功率半导体元件时的浪涌电压并降低开关损耗。诸如IGBT和要配对的另一元件（20）的元件（10）连接，元件（10）由驱动器（22）驱动，栅极电压由控制电路（24）控制。当功率半导体元件关断时，比较器26检测元件20的电压（Vak）为规定电压，控制电路24将栅极电阻从低电阻切换到高电阻，抑制浪涌电压，开关损耗减小。当功率半导体元件导通时，检测到启动电压（Vak），并且控制电路（24）在规定时间之后将栅极电阻从高电阻切换到低电阻以抑制浪涌电压，并且切换损失减少。

12. 发明申请

US20100008113A1 SEMICONDUCTOR POWER CONVERSION DEVICE 有权
标题翻译：半导体功率转换器件
公开(公告)号：US20100008113A1
公开(公告)日：2010-01-14
申请号：US12525169
申请日：2008-02-13
申请人： Hiromichi Kuno , Satoshi Hirose , Naoyoshi Takamatsu , Hiroya Tsuji , Hiroyuki Sakakibara , Kazuki Fukatsu
发明人： Hiromichi Kuno , Satoshi Hirose , Naoyoshi Takamatsu , Hiroya Tsuji , Hiroyuki Sakakibara , Kazuki Fukatsu
IPC分类号： H02M7/44
CPC分类号： H02M1/32 , H02M1/08 , H02M1/44 , H03K17/166
摘要： A surge voltage target setting unit (103) obtains a main circuit power supply voltage (VH) of a semiconductor power conversion device based on an inter-terminal voltage (Vce) of a semiconductor switching element (100) detected by a voltage detection unit (102), and sets a control target (Vm) of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit (71), when the semiconductor switching element (100) is turned off, sets a quantity of voltage modification (V1) so as to modify a gate voltage (Vg) in a direction raising the gate voltage (Vg), that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage (Vce), when the inter-terminal voltage (Vce) exceeds the control target (Vm).
摘要翻译：浪涌电压目标设定单元（103）基于由电压检测单元检测到的半导体开关元件（100）的端子间电压（Vce），获得半导体功率转换装置的主电路电源电压（VH） 102），并根据获得的主电路电源电压设定浪涌电压的控制目标（Vm）。有源栅极控制单元（71）当半导体开关元件（100）关断时，设定电压修正量（V1），以便在提高栅极电压（Vg）的方向上改变栅极电压（Vg）即当端子间电压（Vce）超过控制目标（Vm）时，基于端子间电压（Vce）的反馈，降低截止速度的方向。

13. 发明授权

US5300979A Clamshell type image forming apparatus 失效
标题翻译：蛤壳型成像装置
公开(公告)号：US5300979A
公开(公告)日：1994-04-05
申请号：US022779
申请日：1993-02-23
申请人： Yukio Tsukakoshi , Kiyoshi Miyai , Satoshi Hirose , Tatsuhito Horiuchi , Minoru Kumida
发明人： Yukio Tsukakoshi , Kiyoshi Miyai , Satoshi Hirose , Tatsuhito Horiuchi , Minoru Kumida
IPC分类号： G03G21/16 , G03G15/00 , G03G15/06
CPC分类号： G03G21/1817 , G03G21/1628 , G03G21/1828 , G03G2221/1687 , G03G2221/183
摘要： A clamshell type image forming apparatus, in which a process cartridge included in an upper structure is supported pivotably to a fixed position and a dismounting position against the upper structure, a developing unit included in a lower structure is supported thereon pivotably to a position just opposing to an image holding medium and a position spaced therefrom, and a plate spring which urges the developing unit toward a position spaced from the image holding medium is disposed on the lower structure side, and a plate spring which urges the developing unit toward a position just opposing to the image holding medium is disposed on the upper structure side, thereby inconveniences produced by providing the process cartridge on the upper structure are solved, and by reducing a collision between the developing unit and the image holding medium due to the open-and-close operation of the upper structure, it is possible to prevent a damage of the process cartridge including the image holding medium.
摘要翻译：一种蛤壳型图像形成装置，其中包括在上部结构中的处理盒可枢转地支撑到固定位置和抵靠上部结构的拆卸位置，包括在下部结构中的显影单元可枢转地支撑到刚好相对的位置涉及一种图像保持介质和与其分开的位置，并且在下部结构侧设置有将显影单元朝向与图像保持介质隔开的位置推动的板簧，以及将显影单元朝向刚刚的位置推压的板簧与图像保持介质相对设置在上部结构侧，从而解决了通过在上部结构上设置处理盒而产生的不便，并且通过减少显影单元和图像保持介质之间的碰撞，关闭上部结构的操作，可以防止包括图像保持架的处理盒的损坏 g介质。

14. 发明授权

US4958823A Paper feeding stand 失效
标题翻译：送纸架
公开(公告)号：US4958823A
公开(公告)日：1990-09-25
申请号：US283535
申请日：1988-12-12
申请人： Hiroshi Iwaki , Yoshiharu Mita , Jiro Miyazaki , Akihiko Suto , Satoshi Hirose , Tadashi Renbutsu
发明人： Hiroshi Iwaki , Yoshiharu Mita , Jiro Miyazaki , Akihiko Suto , Satoshi Hirose , Tadashi Renbutsu
IPC分类号： G03G15/00
CPC分类号： G03G15/65 , G03G15/6502 , G03G2215/00383 , G03G2215/00405 , G03G2215/00544 , G03G2215/00548 , Y10S271/902
摘要： A paper feeding stand on which a recording apparatus such as a copying machine is mounted and which contains paper for recording and feeds the paper to the recording apparatus through intermediate rollers provided at the position opposing the paper entry of the recording apparatus according to the rotation of the intermediate rollers. When paper jam occurs between the intermediate rollers and the recording apparatus, the intermediate rollers are rotated in the reversal direction to return the paper to the intermediate roller section, and then the intermediate rollers are moved in the direction intersecting at right angles with the axial direction thereof to expose the intermediate rollers and the jammed paper to the outside so that the paper can be removed easily and surely without tearing.
摘要翻译：一种供纸台，其上安装有诸如复印机的记录装置，并且包含用于记录纸张的纸张，并且通过设置在与记录装置的纸入口相对的位置处的中间辊将纸张馈送到记录装置，中间辊。当中间辊和记录装置之间发生卡纸时，中间辊沿反转方向旋转，使纸回到中间辊部，然后中间辊沿与轴向成直角相交的方向移动以将中间辊和卡纸暴露在外部，使得纸可以容易且可靠地移除而不会撕裂。

15. 发明授权

US08477518B2 Device for driving inverter 有权
标题翻译：变频器驱动装置
公开(公告)号：US08477518B2
公开(公告)日：2013-07-02
申请号：US12921956
申请日：2009-02-23
申请人： Naoyoshi Takamatsu , Satoshi Hirose
发明人： Naoyoshi Takamatsu , Satoshi Hirose
IPC分类号： H02M7/527
CPC分类号： H02M1/08 , H02M2001/0029 , H03K17/163 , H03K17/166 , H03K17/168 , H03K2217/0036
摘要： Disclosed is a device for driving an inverter having a semiconductor switching element. A gate voltage calculating unit (20) calculates a surge voltage from the temperature, current, and DC-side voltage of each of IGBTs of the inverter and compares the surge voltage with the breakdown voltage of the element. The gate voltage calculating unit (20) commands a gate voltage control unit (22) to set a gate voltage higher than the normal value (reference value) in the case of judging that the difference between the element breakdown voltage and the surge voltage exceeds a predetermined threshold voltage and that a margin exists in the surge voltage. The voltage control unit (22) performs switching control of gates of the IGBTs according to the gate voltage command higher than the reference voltage to thereby reduce stationary losses of the IGBTs.
摘要翻译：公开了一种用于驱动具有半导体开关元件的逆变器的装置。栅极电压计算单元（20）根据逆变器的每个IGBT的温度，电流和直流侧电压来计算浪涌电压，并将该浪涌电压与元件的击穿电压进行比较。在判定元件击穿电压与浪涌电压之间的差异超过a的情况下，栅极电压计算单元（20）命令栅极电压控制单元（22）设定高于正常值（基准值）的栅极电压预定的阈值电压，并且在浪涌电压中存在余量。电压控制单元（22）根据高于基准电压的栅极电压指令来对IGBT的栅极进行开关控制，由此减小IGBT的稳定损耗。

16. 发明授权

US08324691B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08324691B2
公开(公告)日：2012-12-04
申请号：US12599192
申请日：2008-06-11
申请人： Satoshi Hirose , Daigo Kikuta
发明人： Satoshi Hirose , Daigo Kikuta
IPC分类号： H01L29/66
CPC分类号： H01L29/7397 , H01L27/0658 , H01L27/0761 , H01L29/66348 , H01L29/7391 , H01L29/861 , H02M7/003
摘要： An inverter for driving a motor includes a plurality of power semiconductor devices. The plurality of power semiconductor devices include a resistance electrically connected between a collector and an emitter of an IGBT element. Each of the power semiconductor devices forms any one of a U-phase arm, a V-phase arm and a W-phase arm of the inverter. As a result, a discharge resistance is built in the inverter, and therefore, it is not required to prepare the discharge resistance separately. Thus, the number of components required for a motor drive apparatus can be decreased and the number of operation steps can be reduced.
摘要翻译：用于驱动电动机的逆变器包括多个功率半导体器件。多个功率半导体器件包括电连接在IGBT元件的集电极和发射极之间的电阻。每个功率半导体器件形成逆变器的U相臂，V相臂和W相臂中的任一个。结果，在逆变器中内置了放电电阻，因此不需要分别制备放电电阻。因此，可以减少电机驱动装置所需的部件的数量，并且可以减少操作步骤的数量。

17. 发明申请

US20120039100A1 POWER CONVERSION DEVICE, METHOD OF CONTROLLING POWER CONVERSION DEVICE, AND VEHICLE WITH THE SAME MOUNTED THEREON 有权
标题翻译：动力转换装置，控制动力转换装置的方法及其安装的车辆
公开(公告)号：US20120039100A1
公开(公告)日：2012-02-16
申请号：US13266694
申请日：2009-05-15
申请人： Satoshi Hirose
发明人： Satoshi Hirose
IPC分类号： H02H7/12
CPC分类号： B60L3/04 , B60K6/445 , B60K28/14 , B60L3/0007 , B60L7/14 , B60L11/123 , B60L11/14 , B60L2210/10 , B60L2210/40 , H02M3/1582 , H02M2001/0029 , H02M2001/322 , Y02T10/6217 , Y02T10/6239 , Y02T10/7022 , Y02T10/7077 , Y02T10/7216 , Y02T10/7241
摘要： In a power conversion device of a vehicle, when a collision of a vehicle is detected, the voltage of a gate signal that drive a semiconductor switching element included in the power conversion device is decreased, and residual charge stored in a smoothing capacitor is discharged. Such a configuration increases switching loss when the semiconductor switching element is turned on or off during discharge of the residual charge in the power conversion device, so that discharge of the residual charge can be accomplished in a shorter time.
摘要翻译：在车辆的电力变换装置中，当检测到车辆的碰撞时，驱动电力转换装置中包含的半导体开关元件的门信号的电压降低，并且放出平滑电容器中存储的残留电荷。当在电力转换装置中的剩余电荷放电期间半导体开关元件接通或断开时，这种配置增加了开关损耗，从而可以在更短的时间内完成剩余电荷的放电。

18. 发明授权

US08050064B2 Semiconductor power conversion device 有权
标题翻译：半导体电源转换装置
公开(公告)号：US08050064B2
公开(公告)日：2011-11-01
申请号：US12525169
申请日：2008-02-13
申请人： Hiromichi Kuno , Satoshi Hirose , Naoyoshi Takamatsu , Hiroya Tsuji , Hiroyuki Sakakibara , Kazuki Fukatsu
发明人： Hiromichi Kuno , Satoshi Hirose , Naoyoshi Takamatsu , Hiroya Tsuji , Hiroyuki Sakakibara , Kazuki Fukatsu
IPC分类号： H02H7/122 , G05F1/40
CPC分类号： H02M1/32 , H02M1/08 , H02M1/44 , H03K17/166
摘要： A surge voltage target setting unit obtains a main circuit power supply voltage of a semiconductor power conversion device based on an inter-terminal voltage of a semiconductor switching element detected by a voltage detection unit, and sets a control target of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit, when the semiconductor switching element is turned off, sets a quantity of voltage modification so as to modify a gate voltage in a direction raising the gate voltage, that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage, when the inter-terminal voltage exceeds the control target.
摘要翻译：浪涌电压目标设定单元基于由电压检测单元检测到的半导体开关元件的端子间电压，获得半导体功率转换装置的主电路电源电压，并根据获得主电路电源电压。有源栅极控制单元，当半导体开关元件关断时，设定电压修正量，以便在提高栅极电压的方向上，即沿着降低关断速度的方向基础上修改栅极电压当端子间电压超过控制目标时，端子间电压反馈。

19. 发明申请

US20100043414A1 CATALYST TEMPERATURE INCREASING APPARATUS FOR HYBRID VEHICLE 有权
标题翻译：催化剂温度增加混合动力车辆的装置
公开(公告)号：US20100043414A1
公开(公告)日：2010-02-25
申请号：US12519481
申请日：2008-02-27
申请人： Satoshi Hirose
发明人： Satoshi Hirose
IPC分类号： F01N3/20 , G06F19/00
CPC分类号： B60W20/15 , B60K1/02 , B60K6/365 , B60K6/445 , B60L2240/445 , B60W10/06 , B60W20/00 , B60W2510/068 , B60W2530/12 , F01N3/043 , F01N3/2006 , F01N3/2013 , F01N13/009 , Y02A50/2322 , Y02T10/26 , Y02T10/6239
摘要： An ECU executes a program including: detecting a catalyst temperature T upon start of an engine; outputting an instruction signal to drive a power module, which is disposed in contact with an outer surface of a catalyst and is high in heat resistance, with a low efficiency upon determination that the catalyst temperature need be increased; and outputting a valve opening instruction signal to a switch valve in a cooling system in such a manner as not to allow a coolant to flow in a coolant pipeline interposed between the power module and an electric part low in heat resistance.
摘要翻译： ECU执行程序，包括：在发动机起动时检测催化剂温度T; 输出指示信号以驱动与催化剂的外表面接触并且耐热性高的功率模块，在确定催化剂温度需要增加时，效率低; 并且以不允许冷却剂在插入在功率模块和低耐热性的电气部件之间的冷却剂管道中流动的方式将开阀指令信号输出到冷却系统中的切换阀。

20. 发明授权

US4921758A Molded product of polyarylene thioether and the use thereof 失效
标题翻译：聚亚芳基硫醚的成型产品及其用途
公开(公告)号：US4921758A
公开(公告)日：1990-05-01
申请号：US140997
申请日：1988-01-05
申请人： Kiyoshi Tagaya , Satoshi Hirose , Takao Iwasaki , Toshitaka Kouyama , Yasuo Sakaguchi
发明人： Kiyoshi Tagaya , Satoshi Hirose , Takao Iwasaki , Toshitaka Kouyama , Yasuo Sakaguchi
IPC分类号： B29C47/00 , B29K81/00 , C08G75/02 , C08J3/24 , C08J5/00 , C08J5/18 , H01B3/30
CPC分类号： C08J3/24 , C08G75/0254 , C08G75/0277 , C08G75/0295 , H01B3/301 , C08J2381/02 , Y10T428/31533 , Y10T428/31678
摘要： The present invention discloses a molded product which is heat-resistant, has a high elongation and is produced by a process including the steps of (1) curing a substantially linear polyarylene thioether having a melt viscosity of about 1,000 to 15,000 poise, thereby forming a polyarylene thioether resin having a melt viscosity of about 5,000 to 16,000 poise and a non-Newtonian coefficient, n, of about 1.5 to 2.1, (2) melt extruding the formed polyarylene thioether resin, (3) taking off the extruded polyarylene thioether resin at an R.sub.1 (ratio of the taking-off speed to the extruding speed at the nozzle of the melt extruded product) of about 10 to 1,000 and (4) crystallizing the taken off polyarylene thioether resin until its crystallization degree is not lower than 20 wt %; and coated electric wires having the above molded product as a coating layer.

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