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    • 16. 发明申请
    • Polyimide film and process for its production
    • 聚酰亚胺薄膜及其生产工艺
    • US20070100127A1
    • 2007-05-03
    • US10530414
    • 2003-03-31
    • Toyoaki IshiwataTsutomu NakamuraKazunori KojimaToru Sawaki
    • Toyoaki IshiwataTsutomu NakamuraKazunori KojimaToru Sawaki
    • C08G69/08
    • C08J5/18B29C41/003B29D7/01B29K2079/08C08G73/1042C08G73/1082C08J2379/08H05K1/0346
    • An oriented polyimide film with a high Young's modulus, satisfactory moist heat resistance and low moisture absorptivity, and a process for its production. The polyimide film is composed mainly of a pyromellitic acid component, with a p-phenylenediamine component at between 30 mole percent and 99 mole percent and a diamine component represented by the structural unit of the following formula (II) at between 1 mole percent and 70 mole percent: (wherein ArIIa and ArIIb are each independently a C6-20 aromatic group optionally having an non-reactive substituent, and X in structural unit (II) consists of at least one group selected from among —O—, —O—ArIIc—O—, —SO2— and —O—ArIId—O—ArIIe—O—), and the polyimide film is characterized by having two perpendicular directions in which the in-plane Young's modulus is 3 GPa or greater, and having a moisture absorptivity of no greater than 3.3 wt % at 72% RH, 25° C.
    • 具有高杨氏模量,令人满意的耐湿热性和低吸湿性的取向聚酰亚胺膜及其制造方法。 聚酰亚胺膜主要由均苯四酸酸组分组成,对苯二胺组分为30摩尔%至99摩尔%,由下式(II)的结构单元表示的二胺组分的摩尔比为1摩尔%至70摩尔% 摩尔百分数:(其中Ar IIa和Ar IIb各自独立地为任选具有非反应性取代基的C6-20芳族基团,结构单元(II)中的X由 的至少一个选自-O - , - O-Ar II - , - SO 2 - 和-O-Ar IId的基团, 其中,所述聚酰亚胺膜的特征在于,其中所述平面内杨氏模量为3GPa以上,并且具有吸湿性 在72%RH,25℃下不大于3.3重量%
    • 18. 发明申请
    • Vacuum processing apparatus
    • 真空加工设备
    • US20070068628A1
    • 2007-03-29
    • US11362868
    • 2006-02-28
    • Takeo UchinoTsutomu NakamuraMichiaki Kobayashi
    • Takeo UchinoTsutomu NakamuraMichiaki Kobayashi
    • H01L21/306C23C16/00
    • H01L21/67769H01L21/67017H01L21/67389H01L21/67775
    • A vacuum processing apparatus having an improved wafer processing efficiency and an improved working efficiency is provided. The vacuum processing apparatus includes a vacuum container in which a specimen is processed with plasma generated from a processing gas supplied to the vacuum container; a transfer container through which the specimen processed in the vacuum container is transferred, the transfer container being coupled to the vacuum container under ambient pressure; a blower for generating an ambient gas flow in the transfer container and an outlet disposed on the transfer container; a storage container for storing the specimen processed in the vacuum container, the storage container being disposed in the ambient gas flow in the transfer container; and an exhauster for exhausting a gas in the storage container.
    • 提供了一种具有改进的晶片处理效率和提高的工作效率的真空处理设备。 真空处理装置包括:真空容器,其中用从供给到真空容器的处理气体产生的等离子体处理试样; 在真空容器中处理的试样被转移通过的转移容器,转印容器在环境压力下连接到真空容器; 用于在所述转移容器中产生环境气流的鼓风机和设置在所述转移容器上的出口; 储存容器,用于储存处理在真空容器中的试样,该储存容器设置在转移容器中的环境气流中; 以及用于排出储存容器中的气体的排气装置。
    • 19. 发明申请
    • Vacuum processing apparatus
    • 真空加工设备
    • US20070068626A1
    • 2007-03-29
    • US11512309
    • 2006-08-30
    • Michiaki KobayashiTsutomu NakamuraTakeo UchinoAkitaka MakinoMasashi Nakagome
    • Michiaki KobayashiTsutomu NakamuraTakeo UchinoAkitaka MakinoMasashi Nakagome
    • C23F1/00H01L21/306
    • H01L21/67126H01J37/32495H01J37/3266H01J37/32743
    • A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.
    • 提供一种等离子体处理装置,其有助于减少维护所需的时间,从而提高处理效率和装置操作的效率。 真空处理装置包括真空容器,其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室,真空容器连接到该传送室,并且其内部的压力降低,样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件,其可移除地联接以覆盖通道的内壁面,其中,在处理室内用处理室中形成的等离子体处理样品。