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    • 14. 发明授权
    • Arc resistant switchgear vertical exhaust system
    • 电弧开关柜垂直排气系统
    • US08101881B2
    • 2012-01-24
    • US12420337
    • 2009-04-08
    • Michael MillerAbraham de la Cruz
    • Michael MillerAbraham de la Cruz
    • H01H33/02
    • H02B13/025
    • An exhaust system for exhausting gases and molten debris caused by an electric arc within a switchgear. The exhaust system includes a switchgear having lower and upper compartments and an exhaust unit externally mounted to the switchgear. A wall panel of the switchgear includes blow out panels coinciding with openings in the lower compartment and corresponding ventilation flaps in a top surface of the exhaust unit to exhaust gas from the lower compartment out the blow out panels in a vertical direction, exiting through the flaps. The upper compartment includes ventilation flaps for exhausting gas in a vertical direction directly through the flaps and optionally through side-mounted blow out panels that communicate with the vertical vent path to the flaps in the top of the exhaust unit. A bus compartment in the exhaust unit includes a vent path to flaps in the top of the exhaust unit for exhausting gas produced by bus arcing.
    • 用于排出由开关设备内的电弧引起的气体和熔融碎屑的排气系统。 排气系统包括具有下隔室和上隔室的开关装置和外部安装到开关装置的排气单元。 开关柜的墙板包括与下隔室中的开口重合的吹出面板和排气单元的顶表面中的相应的通风翼,以从垂直方向排出来自下隔室的排气板,通过翼片 。 上隔室包括用于在垂直方向上直接排出气体的通风翼片,并且可选地通过与排气单元顶部的翼片垂直通风通道连通的侧面安装的吹出面板。 排气单元中的总线室包括在排气单元顶部襟翼的通气路径,用于排出由总线电弧产生的气体。
    • 15. 发明申请
    • STRESS-ENGINEERED RESISTANCE-CHANGE MEMORY DEVICE
    • 应力工程电阻变化记忆装置
    • US20120001148A1
    • 2012-01-05
    • US13233937
    • 2011-09-15
    • Michael MillerPrashant PhatakTony Chiang
    • Michael MillerPrashant PhatakTony Chiang
    • H01L45/00H01L21/02H01L47/00
    • H01L45/1233H01L23/5228H01L23/525H01L27/2409H01L45/08H01L45/146H01L45/1641H01L2924/0002H01L2924/00
    • A resistance-change memory device using stress engineering is described, including a first layer including a first conductive electrode, a second layer above the first layer including a resistive-switching element, a third layer above the second layer including a second conductive electrode, where a first stress is created in the switching element at a first interface between the first layer and the second layer upon heating the memory element, and where a second stress is created in the switching element at a second interface between the second layer and the third layer upon the heating. A stress gradient equal to a difference between the first stress and the second stress has an absolute value greater than 50 MPa, and a reset voltage of the memory element has a polarity relative to a common electrical potential that has a sign opposite the stress gradient when applied to the first conductive electrode
    • 描述了使用应力工程的电阻变化存储器件,包括第一层,包括第一导电电极,第一层上方的第二层,包括电阻式开关元件,第二层上方的第三层包括第二导电电极, 在加热存储元件时在第一层和第二层之间的第一界面处在开关元件中产生第一应力,并且其中在第二层和第三层之间的第二界面处在开关元件中产生第二应力 加热。 等于第一应力和第二应力之间的差的应力梯度具有大于50MPa的绝对值,并且存储元件的复位电压具有相对于具有与应力梯度相反的符号的公共电位的极性, 施加到第一导电电极
    • 17. 发明申请
    • HIGH POWER VCSEL WITH IMPROVED SPATIAL MODE
    • 具有改进的空间模式的高功率VCSEL
    • US20110243178A1
    • 2011-10-06
    • US13133740
    • 2009-12-01
    • Johanna S. KolbMichael MillerSebastien WintersteinUwe Ernst
    • Johanna S. KolbMichael MillerSebastien WintersteinUwe Ernst
    • H01S3/08
    • B41J2/451H01S5/0207H01S5/0656H01S5/18347H01S5/18388H01S5/423
    • The present invention relates to a VCSEL device comprising an optical gain medium (8) arranged between a first DBR (9) and a second DBR (7). The first and the second DBR form a laser cavity and are designed to allow self-contained lasing in the laser cavity, said second DBR (7) being partially transparent for laser radiation resonating in the laser cavity. An optical element is arranged on a side of the second DBR (7) outside of the laser cavity on the optical axis of the laser cavity. The optical element has a concave surface (5) facing the second DBR (7) and being designed to reflect a portion of laser radiation emitted through the second DBR (7) back into the laser cavity. The ratio R/d of the radius of curvature R of the concave surface (5) and the distance d between the concave surface (5) and the gain medium (8) is in the range between 1 and 2. With the proposed VCSEL device a high power output with an improved mode distribution and mode stabilization is achieved.
    • 本发明涉及一种VCSEL设备,其包括布置在第一DBR(9)和第二DBR(7)之间的光学增益介质(8)。 第一和第二DBR形成激光腔并被设计成允许在激光腔中自包含激光,所述第二DBR(7)对于在激光腔中共振的激光辐射部分透明。 光学元件布置在第二DBR(7)的位于激光腔的光轴外侧的一侧。 光学元件具有面向第二DBR(7)的凹面(5),并被设计成将通过第二DBR(7)发射的激光辐射的一部分反射回激光腔。 凹面(5)的曲率半径R与凹面(5)与增益介质(8)的距离d的比值R / d在1〜2的范围内。利用所提出的VCSEL装置 实现了具有改进的模式分布和模式稳定的高功率输出。