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11. 发明授权

US06866678B2 Phototherapeutic treatment methods and apparatus 失效
标题翻译：光治疗方法和装置
公开(公告)号：US06866678B2
公开(公告)日：2005-03-15
申请号：US10315420
申请日：2002-12-10
申请人： Olga Shenderova , Gary E. McGuire
发明人： Olga Shenderova , Gary E. McGuire
IPC分类号： A61N5/06
CPC分类号： A61N5/0616 , A61N5/062 , A61N5/0621 , A61N2005/0652 , A61N2005/0653
摘要： A thin film electroluminescent (TFEL) phototherapy device based on high field electroluminescence (HFEL) or from organic light emitting devices (OLED), consistent with certain embodiments of the present invention has a battery and a charging circuit coupled to the battery, so that when connected to a source of current acts to charge the battery. A TFEL panel produces light when voltage from the power source (battery or AC source) is applied. A processor such as a microprocessor is used to control the application of voltage from the power source to the TFEL panel under control of a control program. A housing is used to contain the battery, the charging circuit and the processor and carry the TFEL panel on an outer surface thereof. In one embodiment, the housing incorporates a removable cover that uncovers a household electrical plug useful for supplying charging current to the charger. In use, a method of carrying out phototherapy, consistent with certain embodiments of the invention involves diagnosing a condition of an affected area of tissue that can be treated with phototherapy. A treatment protocol is determined including, for example, a treatment light intensity, a treatment time, a light modulation characteristic and a treatment light wavelength suitable for treating the condition. The affected area is then irradiated with light from the TFEL panel in accord with the treatment protocol.
摘要翻译：与本发明的某些实施例一致的基于高场电致发光（HFEL）或有机发光器件（OLED）的薄膜电致发光（TFEL）光疗装置具有与电池耦合的电池和充电电路，连接到电流源来为电池充电。当施加来自电源（电池或AC电源）的电压时，TFEL面板产生光。诸如微处理器的处理器用于在控制程序的控制下控制从电源到TFEL面板的电压的应用。壳体用于容纳电池，充电电路和处理器，并在其外表面上承载TFEL面板。在一个实施例中，壳体包括可移除的盖，其露出用于向充电器提供充电电流的家用电插头。在使用中，与本发明的某些实施方案一致的进行光疗的方法涉及诊断可以用光疗治疗的组织的受影响区域的状况。确定治疗方案，包括例如治疗光强度，治疗时间，光调制特性和适合于治疗病症的治疗光波长。然后根据治疗方案用来自TFEL面板的光照射受影响的区域。

12. 发明授权

US06590267B1 Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods 失效
标题翻译：微机电柔性膜静电阀装置及相关制造方法
公开(公告)号：US06590267B1
公开(公告)日：2003-07-08
申请号：US09661997
申请日：2000-09-14
申请人： Scott H. Goodwin-Johansson , Gary E. McGuire
发明人： Scott H. Goodwin-Johansson , Gary E. McGuire
IPC分类号： H01L2978
CPC分类号： F16K99/0001 , B81B3/0021 , B81B2201/054 , B81B2203/0127 , B81B2203/04 , F15C5/00 , F16K99/0007 , F16K99/0028 , F16K99/0051 , F16K2099/0074 , F16K2099/008 , H01H2059/0081
摘要： A MEMS (Micro Electro Mechanical System) valve device driven by electrostatic forces is provided. This valve device can provide for fast actuation, large valve force and large displacements while utilizing minimal power. The MEMS valve device includes a substrate having an aperture formed therein, a substrate electrode, a moveable membrane that overlies the aperture and has an electrode element and a biasing element. Additionally, at least one resiliently compressible dielectric layer is provided to insure electrical isolation between the substrate electrode and electrode element of the moveable membrane. In operation, a voltage differential is established between the substrate electrode and the electrode element of the moveable membrane to move the membrane relative to the aperture to thereby controllably adjust the portion of the aperture that is covered by the membrane. Additional embodiments provide for the resiliently compressible dielectric layer to be formed on either or both the substrate electrode and the moveable membrane and provide for either or both the valve seat surface and the valve seal surface. In yet another embodiment the resiliently compressible dielectric layer(s) have a textured surface; either at the valve seat, the valve seal or at both surfaces. In another embodiment of the invention a pressure-relieving aperture is defined within the substrate and is positioned to underlie the moveable membrane. Alternatively, additional embodiments of the present invention provide for MEMS valve arrays driven by electrostatic forces. The MEMS valve array comprises a substrate having a plurality of apertures defined therein. A method for making the MEMS valve device is also provided.
摘要翻译：提供了由静电力驱动的MEMS（微机电系统）阀装置。该阀装置可以提供快速致动，大的阀力和大的位移，同时利用最小的功率。 MEMS阀装置包括其中形成有孔的基板，基板电极，覆盖在孔上并具有电极元件和偏置元件的可移动膜。此外，提供至少一个可弹性压缩介电层以确保基板电极和可移动膜的电极元件之间的电隔离。在操作中，在基板电极和可移动膜的电极元件之间建立电压差以使膜相对于孔移动，从而可控地调节由膜覆盖的孔的部分。另外的实施例提供了可弹性压缩的介电层，其形成在基板电极和可移动膜之一或两者上，并为阀座表面和阀密封表面中的一个或两者提供。在另一个实施例中，弹性可压缩介电层具有纹理表面; 无论是在阀座，阀门密封件还是在两个表面。在本发明的另一个实施例中，压力释放孔限定在衬底内并且被定位成可移动膜的下面。或者，本发明的另外的实施例提供了由静电力驱动的MEMS阀阵列。 MEMS阀阵列包括其中限定有多个孔的基板。还提供了制造MEMS阀装置的方法。

13. 发明授权

US06586738B2 Electromagnetic radiation detectors having a micromachined electrostatic chopper device 失效
公开(公告)号：US06586738B2
公开(公告)日：2003-07-01
申请号：US09834825
申请日：2001-04-13
申请人： David E. Dausch , Gary E. McGuire
发明人： David E. Dausch , Gary E. McGuire
IPC分类号： G01J500
CPC分类号： B81B3/0035 , G02B26/0833 , G02B26/0841 , G02B26/0866
摘要： The present invention provides for an improved electromagnetic radiation detector having a micromachined electrostatic chopping device. The MEMS flexible film chopping device provides reliability, efficiency, noise reduction and temperature fluctuation compensation capabilities to the associated electromagnetic radiation detector. An electromagnetic radiation detector having an electrostatic chopper device comprises a detector material element, first and second electrodes in electrical contact with the detector material element and electrically isolated from one another. Additionally, the chopper device will incorporate a flexible film actuator overlying the detector material layer and moveable relative thereto. The flexible film actuator will typically include an electrode element and a biasing element such that the actuator remains in a fully curled, open state absent electrostatic voltage and moves to a fully uncurled, closed state upon the application of electrostatic voltage. Arrays that incorporate a plurality of electromagnetic radiation detectors and/or electrostatic chopping devices are additionally provided for.

14. 发明授权

US5886459A Enhanced field emission from microtip structures 失效
标题翻译：从微尖端结构增强场发射
公开(公告)号：US5886459A
公开(公告)日：1999-03-23
申请号：US777936
申请日：1996-12-23
申请人： Orlando H. Auciello , Alan R. Krauss , Gary E. McGuire , Dieter M. Gruen
发明人： Orlando H. Auciello , Alan R. Krauss , Gary E. McGuire , Dieter M. Gruen
IPC分类号： H01J9/02
CPC分类号： H01J9/025 , H01J2201/30426
摘要： A method and system for manufacturing a field emission cathode having enhanced electron emission properties. The field emission cathode is prepared by providing a field emission substrate, an alkali metal alloy is formed at and below the exposed surface of the substrate, and a surface layer of alkali metal atoms are formed on the exposed surface by Gibbsian diffusion segregation action. If the monolayer, or surface layer, is desorbed, the diffusion action reestablishes the alkali metal surface layer thereby providing a stable alkali metal layer and enhanced electron emission characteristics.
摘要翻译：一种具有增强的电子发射特性的场致发射阴极的制造方法和系统。通过设置场致发射基板来制备场发射阴极，在基板的暴露表面和下面形成碱金属合金，通过吉布斯扩散分离作用在暴露的表面上形成碱金属原子的表面层。如果单层或表层被解吸，则扩散作用重新建立了碱金属表面层，从而提供稳定的碱金属层和增强的电子发射特性。

15. 发明授权

US5449642A Method of forming metal-disilicide layers and contacts 失效
标题翻译：形成金属二硅化物层和接触的方法
公开(公告)号：US5449642A
公开(公告)日：1995-09-12
申请号：US227659
申请日：1994-04-14
申请人： Teh Y. Tan , Gary E. McGuire , William T. Lynch
发明人： Teh Y. Tan , Gary E. McGuire , William T. Lynch
IPC分类号： H01L21/285 , H01L21/336 , H01L23/482 , H01L29/45 , H01L21/44 , H01L21/48
CPC分类号： H01L29/66772 , H01L21/28518 , H01L23/4825 , H01L29/458 , H01L2924/0002
摘要： A method of forming a metal-disilicide (MSi.sub.2) film from a silicon-on-insulator (SOI) substrate having an insulating underlayer and a silicon outerlayer includes the formation of a first capping layer on a portion of the silicon outerlayer. The first capping layer preferably includes titanium and a preselected metal (M) such as cobalt. A step is then performed to convert a first portion of the silicon outerlayer to metal-disilicide. This step is preferably accomplished by a rapid thermal annealing step. Thereafter, a second capping layer is formed on the metal-disilicide layer. The second capping layer preferably includes titanium and metal-monosilicide (MSi). Next, a step is performed to convert a second portion of the silicon outerlayer, beneath the first portion, to metal-disilicide while preventing phase-reversal of the already formed metal-disilicide layer to metal-monosilicide. This step is preferably accomplished by a rapid thermal annealing step as well. The method can preferably be used to form low resistance metal-disilicide contacts to active regions of SOI electronic devices.
摘要翻译：从具有绝缘底层和硅外层的绝缘体上硅（SOI）衬底形成金属二硅化物（MSi2）膜的方法包括在硅外层的一部分上形成第一覆盖层。第一覆盖层优选包括钛和预选的金属（M）如钴。然后进行步骤以将硅外层的第一部分转化为金属二硅化物。该步骤优选通过快速热退火步骤完成。此后，在金属二硅化物层上形成第二覆盖层。第二盖层优选包括钛和金属一硅化物（MSi）。接下来，执行步骤，以将第二部分之下的硅外层的第二部分在第一部分之下转化为金属二硅化物，同时防止已经形成的金属二硅化物层与金属一硅化物相反相。该步骤也优选通过快速热退火步骤完成。该方法可优选用于形成低电阻金属二硅化物与SOI电子器件的有源区的接触。

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