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11. 发明授权

US06190935B1 Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权
公开(公告)号：US06190935B1
公开(公告)日：2001-02-20
申请号：US09359789
申请日：1999-07-26
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.

12. 发明授权

US06180961B2 Light emitting semiconductor device with stacked structure 失效
标题翻译：具有层叠结构的发光半导体器件
公开(公告)号：US06180961B2
公开(公告)日：2001-01-30
申请号：US09093609
申请日：1998-06-09
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L33/025 , H01L27/153 , H01L33/24
摘要： A high-density semiconductor device and semiconductor device array exhibiting high light emission efficiency which can be mass-produced at low cost with high yield is provided. An LED array comprises a structure wherein an n-type GaAs buffer layer 102 is formed on an n-type GaAs substrate 101, on which are then stacked an n-type AlzGa1−zAs layer 103, an n-type AlyGa1−yAs layer 104, a semi-insulating AlxGa1−xAs layer 105, and a semi-insulating GaAs layer 106. The energy band gaps of the AlzGa1−zAs layer 103 and AlxGa1−xAs layer 105 are at least larger than the energy band gap of the AlyGa1−yAs layer 104. A pn junction is formed by selective diffusion, having a diffusion front in the semiconductor layer having the smaller energy band gap sandwiched between the semiconductor layers having the larger energy band gaps. The outermost layer forming ohmic contact is made a p-type GaAs region formed by zinc diffusion in a semi-insulating GaAs layer.
摘要翻译：提供了一种可以以低成本，高产率批量生产的高发光效率的高密度半导体器件和半导体器件阵列。 LED阵列包括其中n型GaAs缓冲层102形成在n型GaAs衬底101上的结构，然后将n型GaAs缓冲层102层叠在n型AlzGa1-zAs层103，n型AllyGa1-yAs层104 ，半绝缘Al x Ga 1-x As层105和半绝缘GaAs层106.AlzGa1-zAs层103和AlxGa1-xAs层105的能带隙至少大于Al y Ga 1-x As层105的能带隙。通过选择性扩散形成pn结，在半导体层中具有在具有较大能带间隙的半导体层之间具有较小能带隙的扩散前沿。形成欧姆接触的最外层是在半绝缘GaAs层中通过锌扩散形成的p型GaAs区。

13. 发明授权

US6136627A High-resolution light-sensing and light-emitting diode array and fabrication method thereof 有权
标题翻译：高分辨率光感应和发光二极管阵列及其制造方法
公开(公告)号：US6136627A
公开(公告)日：2000-10-24
申请号：US137073
申请日：1998-08-20
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/144 , H01L27/146 , H01L27/15 , H01L31/0224 , H01L31/10 , H01L31/12 , H01L33/00 , H01L21/225
CPC分类号： H01L31/022408 , H01L27/1446 , H01L27/14601 , H01L27/14643 , H01L27/14683 , H01L27/153 , H01L31/125 , H01L33/0008 , H01L27/156
摘要： A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 .mu.m but not more than 2 .mu.m in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or sensing light, and a wider second region, used for electrode contact. The second regions are located on alternate sides of the array line, permitting a small array pitch to be combined with a large contact area. In a wafer process for fabrication of the chips, a diffusion mask has both windows defining the impurity diffusion regions, and dicing line marks. The dicing line marks are narrowed where they pass adjacent to the windows at the ends of the chip. In the electrode fabrication step, a photomask with an enlarged pattern is used, to allow for misalignment with the diffusion mask.
摘要翻译：光敏/发光二极管阵列芯片在半导体衬底中具有深度至少为0.5μm但不大于2μm的杂质扩散区域。每个杂质扩散区优选分为用于发射或感测光的第一区域和用于电极接触的较宽的第二区域。第二区域位于阵列线的另一侧，允许小的阵列间距与大的接触面积组合。在用于制造芯片的晶片工艺中，扩散掩模具有限定杂质扩散区域的两个窗口和切割线标记。切割线标记在其靠近芯片端部的窗口的地方变窄。在电极制造步骤中，使用具有放大图案的光掩模，以允许与扩散掩模的未对准。

14. 发明授权

US6054724A Light-emitting diode, light-emitting diode array 失效
标题翻译：发光二极管，发光二极管阵列
公开(公告)号：US6054724A
公开(公告)日：2000-04-25
申请号：US923816
申请日：1997-09-04
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L27/15 , H01L33/00 , H01L33/30 , H01L33/34
CPC分类号： H01L27/153 , H01L33/0008
摘要： A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.
摘要翻译：在衬底上形成第一导电类型的化合物半导体层，并且在化合物半导体层上形成第二导电类型的扩散区域。发光二极管使用大直径晶片具有高发射光功率。

15. 发明授权

US5530268A Light-emitting diode array with anti-reflection coating providing reduced internal reflection 失效
标题翻译：具有抗反射涂层的发光二极管阵列提供减少的内部反射
公开(公告)号：US5530268A
公开(公告)日：1996-06-25
申请号：US326499
申请日：1994-10-20
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/15 , H01L33/08 , H01L33/10 , H01L33/30 , H01L33/40 , H01L33/44 , H01L33/00
CPC分类号： H01L33/44 , H01L27/153
摘要： An LED array is fabricated by forming an insulating film on a semiconductor substrate of a first conductive type, forming a plurality of windows in the insulating film, and diffusing an impurity of a second conductive type through these windows to create a plurality of diffusion regions. In addition, an anti-reflection coating consisting of one or more transparent dielectric thin films is formed on the diffusion regions where they are exposed in the windows. The thickness of the anti-reflection coating, or of its constituent thin films, is optimized for maximum transmission of light.
摘要翻译：通过在第一导电类型的半导体衬底上形成绝缘膜，在绝缘膜中形成多个窗口并且通过这些窗口扩散第二导电类型的杂质以形成多个扩散区域来制造LED阵列。此外，在由窗口露出的扩散区域上形成由一个或多个透明电介质薄膜组成的防反射涂层。抗反射涂层或其组成薄膜的厚度被优化用于光的最大透射。

16. 发明授权

US6133588A Light-emitting element array and fabrication method with separate light-emitting and current-conducting diffusion areas 有权
标题翻译：发光元件阵列和具有分开的发光和导电扩散区域的制造方法
公开(公告)号：US6133588A
公开(公告)日：2000-10-17
申请号：US128856
申请日：1998-08-04
申请人： Mitsuhiko Ogihara , Masumi Taninaka , Takatoku Shimizu , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Masumi Taninaka , Takatoku Shimizu , Hiroshi Hamano
IPC分类号： H01L33/08 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/00
CPC分类号： H01L33/38 , H01L33/0008 , H01L33/40
摘要： A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An additional current-conducting area is formed by diffusion of the impurity into the upper layer. An electrode is formed on the substrate, making electrical contact with the current-conducting area, but not covering any part of the light-emitting area. The current-conducting area carries current from the electrode to the light-emitting area.
摘要翻译：在具有半绝缘上层和导电性下层的半导体衬底中形成发光元件。杂质扩散到两层中，通过在下层中形成pn结而形成发光区域。通过将杂质扩散到上层中形成另外的导电区域。在基板上形成电极，与导电区域电接触，但不覆盖发光区域的任何部分。导电区域将电流从电极传送到发光区域。

17. 发明授权

US6063644A Light-emitting element and array with etched surface, and fabrication method thereof 有权
标题翻译：具有蚀刻表面的发光元件和阵列及其制造方法
公开(公告)号：US6063644A
公开(公告)日：2000-05-16
申请号：US145278
申请日：1998-09-02
申请人： Mitsuhiko Ogihara , Masumi Taninaka , Takatoku Shimizu , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Masumi Taninaka , Takatoku Shimizu , Hiroshi Hamano
IPC分类号： H01L33/08 , H01L33/30 , H01L33/36 , H01L33/44 , H01L21/20
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062
摘要： A light-emitting element, or array of light-emitting elements, is formed by diffusion of an impurity into a semiconductor substrate, creating a light-emitting region. Following the diffusion, the surface zone of the light-emitting region, which includes crystal defects caused by the diffusion process, is removed by etching, thereby increasing the light-emitting efficiency by removing nonradiative recombination centers.
摘要翻译：通过将杂质扩散到半导体衬底中，形成发光区域，形成发光元件或发光元件阵列。在扩散之后，通过蚀刻去除包括由扩散过程引起的晶体缺陷的发光区域的表面区域，从而通过去除非辐射复合中心来提高发光效率。

18. 发明授权

US06054726A Light-emitting semiconductor device with planar structure 有权
标题翻译：具有平面结构的发光半导体器件
公开(公告)号：US06054726A
公开(公告)日：2000-04-25
申请号：US328265
申请日：1999-06-17
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Hiroshi Hamano , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Hiroshi Hamano , Masumi Taninaka
IPC分类号： H01L33/08 , H01L33/10 , H01L33/26 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/40 , H01L33/00 , H01S3/19
CPC分类号： H01L33/30 , H01L33/105 , H01S5/18308 , H01S5/0208 , H01S5/0425 , H01S5/18305 , H01S5/18327 , H01S5/2072 , H01S5/3054
摘要： A light-emitting semiconductor device has a planar structure including two multilayer reflecting layers, two cladding layers, and an active layer of a first conductive type. The cladding layers have bandgap energies exceeding the bandgap energy of the active layer. The multilayer reflecting layers each include at least one constituent layer with a bandgap energy exceeding the bandgap energy of the active layer. An area of a second conductive type extends from the upper surface of the device through the upper multilayer reflecting layer and upper cladding layer into the active layer, forming a pn junction in the active layer. This planar structure is suitable for high-yield manufacturing.
摘要翻译：发光半导体器件具有包括两个多层反射层，两个包覆层和第一导电类型的有源层的平面结构。包覆层的带隙能量超过有源层的带隙能量。多层反射层各自包括具有超过有源层的带隙能量的带隙能量的至少一个构成层。第二导电类型的区域从器件的上表面穿过上多层反射层和上覆层延伸到有源层中，在有源层中形成pn结。该平面结构适用于高产量制造。

19. 发明授权

US5821567A High-resolution light-sensing and light-emitting diode array 失效
标题翻译：高分辨率光感应和发光二极管阵列
公开(公告)号：US5821567A
公开(公告)日：1998-10-13
申请号：US763860
申请日：1996-12-11
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/144 , H01L27/146 , H01L27/15 , H01L31/0224 , H01L31/10 , H01L31/12 , H01L33/00
CPC分类号： H01L31/022408 , H01L27/1446 , H01L27/14601 , H01L27/14643 , H01L27/14683 , H01L27/153 , H01L31/125 , H01L33/0008 , H01L27/156
摘要： A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 .mu.m but not more than 2 .mu.m in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or sensing light, and a wider second region, used for electrode contact. The second regions are located on alternate sides of the array line, permitting a small array pitch to be combined with a large contact area. In a wafer process for fabrication of the chips, a diffusion mask has both windows defining the impurity diffusion regions, and dicing line marks. The dicing line marks are narrowed where they pass adjacent to the windows at the ends of the chip. In the electrode fabrication step, a photomask with an enlarged pattern is used, to allow for misalignment with the diffusion mask.
摘要翻译：光敏/发光二极管阵列芯片在半导体衬底中具有深度至少为0.5μm但不大于2μm的杂质扩散区域。每个杂质扩散区优选分为用于发射或感测光的第一区域和用于电极接触的较宽的第二区域。第二区域位于阵列线的另一侧，允许小的阵列间距与大的接触面积组合。在用于制造芯片的晶片工艺中，扩散掩模具有限定杂质扩散区域的两个窗口和切割线标记。切割线标记在其靠近芯片端部的窗口的地方变窄。在电极制造步骤中，使用具有放大图案的光掩模，以允许与扩散掩模的未对准。

20. 发明授权

US5733689A Led array fabrication process with improved unformity 失效
标题翻译： Led阵列制造工艺具有改进的不整合性
公开(公告)号：US5733689A
公开(公告)日：1998-03-31
申请号：US611410
申请日：1996-03-06
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/15 , G03F9/00
CPC分类号： H01L27/153
摘要： A method of fabricating an LED array includes (a) forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; (b) patterning the first insulating film by photolithography to form a plurality of first windows; (c) diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; (d) forming a second insulating film on the first insulating film and the plurality of first windows; (e) patterning the second insulating film by photolithography to remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; (f) forming a metal film on the second insulating film and the plurality of first windows; and (g) patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.
摘要翻译：制造LED阵列的方法包括：（a）在第一导电类型的半导体衬底上形成由氧化铝构成的第一绝缘膜; （b）通过光刻图案化所述第一绝缘膜以形成多个第一窗口; （c）将通过所述多个第一窗口的第二导电类型的杂质扩散到所述第一绝缘膜中，从而在所述多个第一窗口下方形成所述第二导电类型的多个扩散区域; （d）在所述第一绝缘膜和所述多个第一窗口上形成第二绝缘膜; （e）使用不蚀刻第一绝缘膜的蚀刻剂通过光刻对第二绝缘膜图案化以从多个第一窗口去除第二绝缘膜; （f）在所述第二绝缘膜和所述多个第一窗口上形成金属膜; 和（g）通过光刻法形成金属膜以形成与各个扩散区电接触的多个电极。

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