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11. 发明申请

US20050287773A1 Laser beam projection mask, and laser beam machining method and laser beam machine using same 失效
标题翻译：激光束投影掩模，激光束加工方法和激光束机使用相同
公开(公告)号：US20050287773A1
公开(公告)日：2005-12-29
申请号：US11158528
申请日：2005-06-21
申请人： Junichiro Nakayama , Masanori Seki , Hiroshi Tsunasawa , Yoshihiro Taniguchi
发明人： Junichiro Nakayama , Masanori Seki , Hiroshi Tsunasawa , Yoshihiro Taniguchi
IPC分类号： B23K26/06 , B23K26/08 , C30B13/00 , C30B21/04 , H01L21/20 , H01L21/26
CPC分类号： H01L21/0268 , B23K26/066 , B23K26/083 , H01L21/2026
摘要： The laser beam projection mask 14 has three rectangular-shaped slits 25, 26, 27 as transmission areas. These three slits 25, 26, 27 are formed in sequence in X direction shown by an arrow X in FIG. 2C at specified intervals, and the width in the X direction decreases in the order of the slit 25, the slit 26 and the slit 27. More particularly, transmission coefficients of the transmission areas change in conformity with a temperature distribution curve V1 of a silicon film 4 shown in FIG. 2B.
摘要翻译：激光束投影掩模14具有作为透射区域的三个矩形狭缝25,26,27。这三个狭缝25,26,27在X方向依次形成，如图1中的箭头X所示。 2 C，X方向的宽度按照狭缝25，狭缝26和狭缝27的顺序减小。更具体地，透射区域的透射系数根据图1所示的硅膜4的温度分布曲线V 1而变化。 2 B.

12. 发明授权

US5192817A Phenanthrene derivatives 失效
标题翻译：衍生物衍生物
公开(公告)号：US5192817A
公开(公告)日：1993-03-09
申请号：US775973
申请日：1991-11-05
申请人： Yoshihisa Takaishi , Kiyoto Goto , Takuji Uesako , Toshiko Kuwahara , Masaaki Takai , Yukihisa Ono , Yoshihiro Taniguchi , Sachiko Manabe , Takahiro Asakuni
发明人： Yoshihisa Takaishi , Kiyoto Goto , Takuji Uesako , Toshiko Kuwahara , Masaaki Takai , Yukihisa Ono , Yoshihiro Taniguchi , Sachiko Manabe , Takahiro Asakuni
IPC分类号： C07C49/747 , C07C50/34 , C07C50/38 , C07C62/32 , C07C62/34 , C07C62/38 , C07C69/00 , C07C69/007 , C07C69/013 , C07C69/757 , C07D307/77
CPC分类号： C07D307/77 , C07C49/747 , C07C50/34 , C07C50/38 , C07C62/32 , C07C62/34 , C07C62/38 , C07C69/007 , C07C69/013 , C07C69/757 , C07C2103/26
摘要： Novel phenanthrene derivatives represented by the general formula (1), ##STR1## wherein the group of the formula ##STR2## is a group of the formula ##STR3## (wherein R.sup.1 is a hydrogen atom or a lower alkyl group), a group of the formula ##STR4## (wherein R.sup.2 is a hydrogen atom or a lower alkanoyl group) or a group of the formula ##STR5## (wherein R.sup.2 is the same as defined above), and salts thereof, and other compounds derived therefrom and salts thereof; processes for preparing the same; and interleukin-1 (IL-1) inhibitors containing the abovementioned novel phenanthrene derivatives as to the active ingredient(s).
摘要翻译： PCT No.PCT / JP91 / 00289 Sec。 371日期1991年11月5日 102（e）日期1991年11月5日PCT 1991年3月5日PCT公布。公开号WO91 / 13855 1991年9月19日，由通式（1）表示的新颖的菲衍生物，其中式（IMAGE）的基团是式（IMAGE）的基团（其中R1是氢原子或低级烷基），式（IMAGE）（其中R 2是氢原子或低级烷酰基）或下式的基团（其中R 2与上述定义相同）的基团，以及盐和其衍生的其它化合物及其盐; 制备方法和含有上述新型菲衍生物的白细胞介素-1（IL-1）抑制剂的活性成分。

13. 发明授权

US07614137B2 Method of manufacturing a magnetic slider head 失效
标题翻译：制造磁性滑块头的方法
公开(公告)号：US07614137B2
公开(公告)日：2009-11-10
申请号：US11481521
申请日：2006-07-05
申请人： Yoshihiro Taniguchi , Yoshinori Takeuchi
发明人： Yoshihiro Taniguchi , Yoshinori Takeuchi
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/6005 , Y10S438/976 , Y10T29/49025 , Y10T29/49037 , Y10T29/49041 , Y10T29/49048 , Y10T29/49052 , Y10T156/1082 , Y10T156/11
摘要： Embodiments of the invention relate to manufacturing method of a magnetic head slider which flies stably even with a reduced peripheral speed resulting from a trend toward a magnetic disk having a smaller diameter. According to one embodiment, a method of manufacturing a magnetic head slider comprises forming a leading side rail surface and a trailing side rail surface, a leading stepped bearing surface and a trailing stepped bearing surface, and a negative-pressure groove surface on an air bearing surface through etching, forming a first stepped surface on the leading side rail surface through sputtering, and forming a second stepped surface by forming a carbon layer on the first stepped surface through sputtering. The first stepped surface has a first height with respect to the leading side rail surface and the second stepped surface has a second height with respect to the first stepped surface.
摘要翻译：本发明的实施例涉及一种磁头滑动器的制造方法，即使由于朝向具有较小直径的磁盘的趋势而导致圆周速度降低，该磁头滑块稳定地飞行。根据一个实施例，一种制造磁头滑块的方法包括：形成前导轨表面和后侧轨道表面，前进阶梯轴承表面和后阶梯支承表面，以及空气轴承上的负压槽表面表面通过蚀刻，通过溅射在前侧轨道表面上形成第一台阶表面，并且通过溅射在第一台阶表面上形成碳层来形成第二台阶表面。第一台阶表面相对于前侧轨道表面具有第一高度，而第二台阶表面相对于第一台阶表面具有第二高度。

14. 发明申请

US20050272185A1 Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus 审中-公开
标题翻译：制造半导体薄膜的方法和半导体薄膜制造装置
公开(公告)号：US20050272185A1
公开(公告)日：2005-12-08
申请号：US11147641
申请日：2005-06-07
申请人： Masanori Seki , Yoshihiro Taniguchi , Tetsuya Inui
发明人： Masanori Seki , Yoshihiro Taniguchi , Tetsuya Inui
IPC分类号： H01L21/20 , C30B1/00 , C30B13/24 , C30B29/06 , H01L21/00 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L21/02675 , C30B13/24 , C30B29/06 , H01L21/2026 , H01L27/1214 , H01L29/78672 , Y10T117/10
摘要： A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the precursor semiconductor thin film is irradiated with a predetermined reference laser beam, and a radiation initiation time or power density of a laser beam is controlled according to change in reflectance of the site irradiated with the reference laser beam. A semiconductor thin film fabrication apparatus used in the fabrication method of present invention, wherein includes at least two light sources, a sensing unit, and a control unit. The crystals formed have no difference in the length of crystal caused by variation in the energy of each radiation.
摘要翻译：一种包含多晶半导体区域的半导体薄膜的制造方法，其通过用至少两种类型的激光束照射前体半导体薄膜，并对前体半导体薄膜进行熔融再结晶，其中前体半导体薄膜用预定的参考激光束，并且根据用参考激光束照射的部位的反射率的变化来控制激光束的发射时间或功率密度。一种在本发明的制造方法中使用的半导体薄膜制造装置，其包括至少两个光源，感测单元和控制单元。形成的晶体由于每个辐射能量的变化引起的晶体长度没有差异。

15. 发明授权

US4371260A Method for setting up highlight and shadow point density values of original pictures to a picture reproducing machine 失效
标题翻译：将原始图像的高光和阴影点浓度值设置到图像再现机的方法
公开(公告)号：US4371260A
公开(公告)日：1983-02-01
申请号：US240969
申请日：1981-03-05
申请人： Takeshi Yoshimoto , Hideki Hiraoka , Seiji Okazaki , Yoshihiro Taniguchi , Tsutomu Harada
发明人： Takeshi Yoshimoto , Hideki Hiraoka , Seiji Okazaki , Yoshihiro Taniguchi , Tsutomu Harada
IPC分类号： G03F3/08 , H04N1/06 , H04N1/407 , H04N1/60 , G03B27/80
CPC分类号： H04N1/6027 , H04N1/4072
摘要： A method for setting up density values of highlight and shadow points of original pictures to a picture reproducing machine such as a color scanner and a color facsimile, wherein one of the original pictures now being scanned is discriminated to output a discrimination signal, and wherein the highlight and the shadow point density values or values corresponding to a density range of the one original picture are read out of a memory in which the highlight and the shadow point density values or the values corresponding to the density ranges of the original pictures are stored, by addressing the memory by means of the discrimination signal, and then are set up to the picture reproducing machine.
摘要翻译：一种用于将原始图像的高亮和阴影点的浓度值设置到诸如彩色扫描器和彩色传真机的图像再现机器的方法，其中，正在扫描的原始图像之一被区分以输出鉴别信号，并且其中从存储高亮度和阴影浓度值或对应于原始图像的浓度范围的值的存储器中读出对应于一个原始图像的浓度范围的阴影点密度值或值，通过鉴别信号寻址存储器，然后设置到图像再现机。

16. 发明授权

US07651931B2 Laser beam projection mask, and laser beam machining method and laser beam machine using same 失效
标题翻译：激光束投影掩模，激光束加工方法和激光束机使用相同
公开(公告)号：US07651931B2
公开(公告)日：2010-01-26
申请号：US11158528
申请日：2005-06-21
申请人： Junichiro Nakayama , Masanori Seki , Hiroshi Tsunasawa , Yoshihiro Taniguchi
发明人： Junichiro Nakayama , Masanori Seki , Hiroshi Tsunasawa , Yoshihiro Taniguchi
IPC分类号： H01L21/20
CPC分类号： H01L21/0268 , B23K26/066 , B23K26/083 , H01L21/2026
摘要： The laser beam projection mask 14 has three rectangular-shaped slits 25, 26, 27 as transmission areas. These three slits 25, 26, 27 are formed in sequence in X direction shown by an arrow X in FIG. 2C at specified intervals, and the width in the X direction decreases in the order of the slit 25, the slit 26 and the slit 27. More particularly, transmission coefficients of the transmission areas change in conformity with a temperature distribution curve V1 of a silicon film 4 shown in FIG. 2B.
摘要翻译：激光束投影掩模14具有作为透射区域的三个矩形狭缝25,26,27。这三个狭缝25,26,27在X方向依次形成，如图1中的箭头X所示。 2C，并且X方向的宽度按照狭缝25，狭缝26和狭缝27的顺序减小。更具体地，透射区域的透射系数根据硅的温度分布曲线V1而变化薄膜4。 2B。

17. 发明授权

US07174593B2 Vacuum cleaner having an ion generator 失效
标题翻译：具有离子发生器的吸尘器
公开(公告)号：US07174593B2
公开(公告)日：2007-02-13
申请号：US10327879
申请日：2002-12-26
申请人： Masakuni Soejima , Yasushi Kondo , Yoshihiro Taniguchi , Ryohei Yoshida , Masaki Shibuya , Seiji Yamaguchi , Saburo Kajikawa , Hidenori Kitamura , Hiroyuki Uratani , Kouichi Fujita , Haruka Ishikawa
发明人： Masakuni Soejima , Yasushi Kondo , Yoshihiro Taniguchi , Ryohei Yoshida , Masaki Shibuya , Seiji Yamaguchi , Saburo Kajikawa , Hidenori Kitamura , Hiroyuki Uratani , Kouichi Fujita , Haruka Ishikawa
IPC分类号： A47L9/04
CPC分类号： A47L9/0411 , A47L7/04 , A47L9/0488 , A47L9/06 , A47L9/0613
摘要： A vacuum cleaner includes an electric blower for generating a suction air flow, a suction head in communication with the electric blower for drawing in dirt, a filter bag communication with the electric blower for capturing and collecting dirt, an exhaust unit for discharging exhaust air from the electric blower to atmosphere, and an ion generator for generating negative ions and/or positive ions. The ion generator is placed between the suction head and the filter bag.
摘要翻译：吸尘器包括用于产生吸入空气流的电动鼓风机，与电动鼓风机连通以吸入污物的吸头，与用于捕集和收集污物的电动鼓风机的过滤袋连通，用于排出废气的排气单元电动鼓风机到大气，以及用于产生负离子和/或正离子的离子发生器。离子发生器放置在吸头和过滤袋之间。

18. 发明申请

US20070008651A1 Stable flying height magnetic head slider and manufacturing method 失效
标题翻译：稳定飞高高度磁头滑块及制造方法
公开(公告)号：US20070008651A1
公开(公告)日：2007-01-11
申请号：US11481521
申请日：2006-07-05
申请人： Yoshihiro Taniguchi , Yoshinori Takeuchi
发明人： Yoshihiro Taniguchi , Yoshinori Takeuchi
IPC分类号： G11B5/60
CPC分类号： G11B5/6005 , Y10S438/976 , Y10T29/49025 , Y10T29/49037 , Y10T29/49041 , Y10T29/49048 , Y10T29/49052 , Y10T156/1082 , Y10T156/11
摘要： Embodiments of the invention provide solutions to a problem, in which a reduced peripheral speed resulting from a trend toward a magnetic disk having a smaller diameter makes it more and more difficult to achieve a lifting force that allows a magnetic head slider to fly stably. According to one embodiment, in a magnetic head slider comprising a leading edge, a trailing edge, and an air bearing surface, the air bearing surface includes a plurality of leading side rail surfaces, a trailing side rail surface disposed in the same plane as the leading side rail surfaces and having a magnetic head mounted thereon, a stepped bearing surface having a predetermined depth δ1 from the leading side rail surface, and a negative-pressure groove surface having a depth δ2 from the leading side rail surface, the depth δ2 being even deeper than the stepped bearing surface. The leading side rail surfaces include first stepped surfaces having a predetermined height h1 and second stepped surfaces having a predetermined height h2 from the first stepped surfaces, the first stepped surfaces and the second stepped surfaces having continuity in a longitudinal direction of the magnetic head slider.
摘要翻译：本发明的实施例提供了一种问题的解决方案，其中由于朝向具有较小直径的磁盘的趋势而导致的减小的圆周速度使得越来越难以实现允许磁头滑块稳定地飞行的提升力。根据一个实施例，在包括前缘，后缘和空气轴承表面的磁头滑动器中，空气轴承表面包括多个前侧轨道表面，后侧轨道表面设置在与该边缘相同的平面中前导侧轨道表面，并且安装有磁头，具有来自前侧轨道表面的预定深度δ1的阶梯式支承表面以及具有从前侧轨道表面的深度δ2的负压槽表面，三角洲2比阶梯式支承面更深。前导侧轨面包括具有预定高度h 1的第一台阶表面和具有来自第一台阶表面的预定高度h 2的第二台阶表面，第一台阶表面和第二台阶表面在磁头的纵向方向上具有连续性滑块

19. 发明申请

US20060154456A1 Crystallized semicoductor thin film manufacturing method and its manufacturing apparatus 审中-公开
标题翻译：结晶半导体薄膜制造方法及其制造装置
公开(公告)号：US20060154456A1
公开(公告)日：2006-07-13
申请号：US10542447
申请日：2004-01-13
申请人： Yoshihiro Taniguchi , Hiroshi Tsunazawa , Shinya Okazaki , Tetsuya Inui
发明人： Yoshihiro Taniguchi , Hiroshi Tsunazawa , Shinya Okazaki , Tetsuya Inui
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , B23K26/04 , H01L21/0268 , H01L21/2026 , H01L21/268
摘要： A fabrication method of a crystallized semiconductor thin film is such that: by performing pulse irradiation of energy beams in a minute slit shape to a semiconductor thin film (5), the semiconductor thin film (5) of an region to which the energy beams are irradiated is fused and solidified over the whole area in a thickness direction so as to be crystallized, a main beam (6) and a sub beam (7), having smaller energy per unit area than that of the main beam (6), which adjoins the main beam (6), being irradiated to the semiconductor thin film (5).
摘要翻译：晶体化半导体薄膜的制造方法为：通过对半导体薄膜（5）进行微细狭缝形状的能量束的脉冲照射，能量束的区域的半导体薄膜（5）照射的整个区域在厚度方向上熔化固化，结晶化，主梁（6）和副梁（7）的单位面积的能量比主梁（6）的能量小，其中邻接主梁（6），照射到半导体薄膜（5）。

20. 发明申请

US20060019474A1 Semiconductor thin film crystallization device and semiconductor thin film crystallization method 失效
标题翻译：半导体薄膜结晶装置和半导体薄膜结晶方法
公开(公告)号：US20060019474A1
公开(公告)日：2006-01-26
申请号：US11190707
申请日：2005-07-26
申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
发明人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
IPC分类号： H01L21/84 , H01L21/324 , H01L21/20
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/0732 , B23K26/0738 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/6675 , H01L29/78672 , H01L29/78696
摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.
摘要翻译：第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以便形成与第配置到第一束斑并且包含第一束斑。在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。

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