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11. 发明授权

US07224859B2 Opto-electronic integrated circuit device, opto-electronic integrated circuit system and transmission method 有权
标题翻译：光电集成电路器件，光电集成电路系统及传输方式
公开(公告)号：US07224859B2
公开(公告)日：2007-05-29
申请号：US11062663
申请日：2005-02-23
申请人： Masataka Hoshino , Tomotoshi Sato
发明人： Masataka Hoshino , Tomotoshi Sato
IPC分类号： G02B6/12
CPC分类号： H04Q11/0005 , H01L2224/16225 , H04Q2011/0058
摘要： The opto-electronic integrated circuit device comprises an optical switch 18 provided in an input port 12a of a first input/output port 36a over a substrate 10 and changing over an optical path of an optical signal inputted from the input port 12a and outputting the optical signal through one of a plurality of output terminals 24a–24d; an opto-electric conversion element 26a optically connected to one of the plural output terminals of the optical switch 18, and converting the optical signal outputted from one of the output terminals 24a–24d of the optical switch 18 to an electric signal and inputting the converted electric signal in a semiconductor element 30 mounted over the substrate 10; and an optical waveguide 50 optically connected to another of the plural output terminal 24d of the optical switch 18 and outputting the optical signal outputted from said another output terminal 24d of the optical switch 18 through an output port 32b of a second input/output port 36b over the substrate 10.
摘要翻译：光电集成电路装置包括设置在基板10上的第一输入/输出端口36a的输入端口12a中的光开关18，并且改变从输入端口12a输入的光信号的光路，通过多个输出端子24a-24d之一输出光信号; 光电转换元件26，光学连接到光开关18的多个输出端之一，并将从光开关18的输出端子24a-24d输出的光信号转换为电信号，在安装在基板10上的半导体元件30中输入转换后的电信号; 以及与光开关18的多个输出端子24d的另一个光学连接的光波导路50，并通过第二输入/输出端口的输出端口32b输出从光开关18的另一输出端子24d输出的光信号，输出端口36b。

12. 发明申请

US20050189637A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050189637A1
公开(公告)日：2005-09-01
申请号：US11055707
申请日：2005-02-11
申请人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
发明人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/12 , H01L23/31 , H01L23/48 , H01L23/495
CPC分类号： H01L24/12 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/11 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/0508 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05548 , H01L2224/13025 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2224/05599
摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.
摘要翻译：提供了可靠性提高的半导体器件及其制造方法。本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径靠近半导体衬底的背表面的部分。

13. 发明授权

US08148771B2 Semiconductor device and method to manufacture thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08148771B2
公开(公告)日：2012-04-03
申请号：US12837323
申请日：2010-07-15
申请人： Masataka Hoshino , Ryoto Fukuyama , Koji Taya
发明人： Masataka Hoshino , Ryoto Fukuyama , Koji Taya
IPC分类号： H01L21/02
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2221/6834 , H01L2221/68359 , H01L2224/13009 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/16237 , H01L2224/29111 , H01L2224/2919 , H01L2224/81193 , H01L2224/81801 , H01L2224/83102 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01077 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/00014
摘要： A semiconductor device 100 includes a semiconductor substrate 14, a connection electrode 12 disposed on an upper surface of the semiconductor substrate 14 and connected to an integrated circuit thereon, a through electrode 20 which penetrates the semiconductor substrate 14 and the connection electrode 20, and an insulation portion 30 interposed between the semiconductor substrate 14 and the through electrode 20. The through electrode 20 is integrally formed to protrude outward from upper surfaces of the semiconductor substrate 14 and the connection electrode 12, and connected to the connection electrode 12 in a region where the through electrode 20 penetrates the connection electrode 12.
摘要翻译：半导体器件100包括半导体衬底14，连接电极12，其设置在半导体衬底14的上表面上并连接到其上的集成电路，贯穿半导体衬底14和连接电极20的贯通电极20和绝缘部分30插入在半导体衬底14和贯通电极20之间。贯通电极20一体地形成为从半导体衬底14和连接电极12的上表面向外突出，并连接到连接电极12，通孔电极20穿透连接电极12。

14. 发明申请

US20070145579A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070145579A1
公开(公告)日：2007-06-28
申请号：US11636155
申请日：2006-12-07
申请人： Masataka Hoshino , Junichi Kasai , Kouichi Meguro , Ryota Fukuyama , Yasuhiro Shinma , Koji Taya , Masanori Onodera , Naomi Masuda
发明人： Masataka Hoshino , Junichi Kasai , Kouichi Meguro , Ryota Fukuyama , Yasuhiro Shinma , Koji Taya , Masanori Onodera , Naomi Masuda
IPC分类号： H01L23/34
CPC分类号： H01L25/0657 , H01L23/3128 , H01L23/49575 , H01L25/50 , H01L2224/02371 , H01L2224/05548 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2225/06506 , H01L2225/06513 , H01L2225/06551 , H01L2225/06555 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.
摘要翻译：本发明提供一种半导体器件，其包括堆叠的半导体芯片，每个半导体芯片包括半导体衬底和设置在半导体衬底的侧面上且在其侧面上形成有凹部的第一绝缘层; 设置在凹部的内侧面的中心部的第一金属层; 以及第二金属层，其设置在凹部中并连接到形成在每个半导体芯片上的第一金属层。本发明还提供一种半导体器件的制造方法。

15. 发明授权

US07094701B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07094701B2
公开(公告)日：2006-08-22
申请号：US11182024
申请日：2005-07-15
申请人： Mitsuo Umemoto , Masataka Hoshino , Hiroshi Terao
发明人： Mitsuo Umemoto , Masataka Hoshino , Hiroshi Terao
IPC分类号： H10L22/302
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/02372 , H01L2224/03 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.
摘要翻译：提供具有通孔电极的半导体器件的制造方法，以提高半导体器件的可靠性和产量。穿过半导体衬底的通孔形成在对应于焊盘电极的位置处。绝缘膜形成在半导体衬底的背面和通孔的表面上。在半导体基板的背面形成有在通孔的边缘处具有突出部的加强绝缘膜。通过使用加强绝缘膜作为掩模的蚀刻来除去通孔底部的绝缘膜，同时保留通孔侧壁上的绝缘膜。通孔电极，布线层和导电端子形成在半导体衬底的背面和通孔上。最后，半导体衬底通过切割被分成多个半导体晶片。

16. 发明授权

US5589425A Process of selective area chemical vapor deposition of metal films 失效
标题翻译：金属膜选择性区域化学气相沉积工艺
公开(公告)号：US5589425A
公开(公告)日：1996-12-31
申请号：US350036
申请日：1994-11-29
申请人： Masataka Hoshino , Nobuhiro Misawa
发明人： Masataka Hoshino , Nobuhiro Misawa
IPC分类号： C23C16/02 , C23C16/04 , C23C16/18 , C23C16/44 , H01L21/28 , H01L21/285 , H01L21/768 , C23C16/00
CPC分类号： C23C16/04 , C23C16/18 , H01L21/76879
摘要： A process of growing a film of a metal on a substrate in a selective area thereof by chemical vapor deposition, the process comprising the steps of: preparing a source having a molecule comprising a metal and a radical; providing a substrate having a selective area made of a first substance which is unreactive with the radical and the other area made of copper which is reactive with the radical; and supplying the source onto the substrate held at a film growing temperature to induce a reaction on the substrate, such that, in the selective area, the molecule of the source is bonded to the first substance and decomposed to precipitate the metal on the first substance while, in the other area, the radical of the molecule is combined with the copper to cover the other area of the substrate with a coating which is unreactive with the molecule of the source.
摘要翻译：通过化学气相沉积在其选择区域中在衬底上生长金属膜的方法，该方法包括以下步骤：制备具有包含金属和自由基的分子的源; 提供具有由与所述基团反应的基团和由铜制成的其它区域不反应的第一物质制成的选择区域的基板; 并将源供给到保持在膜生长温度下的基板上以在基板上引起反应，使得在选择区域中，源的分子与第一物质结合并分解以使第一物质上的金属沉淀而在另一方面，分子的基团与铜组合以覆盖基材的其它区域，其涂层与源的分子不反应。

17. 发明授权

US5491005A Gold thin film vapor growing method 失效
标题翻译：金薄膜蒸气生长法
公开(公告)号：US5491005A
公开(公告)日：1996-02-13
申请号：US317838
申请日：1994-10-04
申请人： Masataka Hoshino
发明人： Masataka Hoshino
IPC分类号： C23C16/06 , C07F1/00 , C23C16/18 , C23C16/44 , C23C16/448 , H01L21/205 , H01L21/3205 , H01L21/768 , H01L23/52 , H05H1/24 , C23C16/00 , C30B29/52
CPC分类号： H01L21/76877 , C07F1/00 , C23C16/18 , C23C16/44 , C23C16/4482
摘要： A method of growing, in a vapor phase, a gold film having high electro-migration resistance and a flat surface, and capable of being buried in contact holes disposed in an insulating film of an integrated circuit device, for example, at a practical growing rate. Dimethylgold hexafluoroacetylacetonato (DMAu(hfac)), for example, is used as a starting gas, and vapor growth is carried out under specific conditions by utilizing thermal CVD. Adhesion of the gold film can be improved by converting it to a two-layered film by the combination of plasma enhanced CVD with thermal CVD.
摘要翻译：在汽相中生长具有高耐迁移电阻和平坦表面的金膜，并且能够例如在实际生长中埋设在集成电路器件的绝缘膜中的接触孔中的方法率。使用二甲基六氟乙酰丙酮（DMAu（hfac））作为起始气体，通过利用热CVD在特定条件下进行气相生长。通过等离子体增强CVD与热CVD的组合将金膜转化为双层膜可以提高金膜的粘合性。

18. 发明授权

US09293441B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US09293441B2
公开(公告)日：2016-03-22
申请号：US13252714
申请日：2011-10-04
申请人： Masataka Hoshino , Junichi Kasai , Kouichi Meguro , Ryota Fukuyama , Yasuhiro Shinma , Koji Taya , Masanori Onodera , Naomi Masuda
发明人： Masataka Hoshino , Junichi Kasai , Kouichi Meguro , Ryota Fukuyama , Yasuhiro Shinma , Koji Taya , Masanori Onodera , Naomi Masuda
IPC分类号： H01L23/02 , H01L25/065 , H01L25/00 , H01L23/31 , H01L23/495
CPC分类号： H01L25/0657 , H01L23/3128 , H01L23/49575 , H01L25/50 , H01L2224/02371 , H01L2224/05548 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2225/06506 , H01L2225/06513 , H01L2225/06551 , H01L2225/06555 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.

19. 发明授权

US08637986B2 Semiconductor device and method for manufacturing thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08637986B2
公开(公告)日：2014-01-28
申请号：US12256333
申请日：2008-10-22
申请人： Naomi Masuda , Masataka Hoshino , Ryota Fukuyama
发明人： Naomi Masuda , Masataka Hoshino , Ryota Fukuyama
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/81 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/50 , H01L2224/0401 , H01L2224/05557 , H01L2224/131 , H01L2224/13147 , H01L2224/16105 , H01L2224/75252 , H01L2224/81054 , H01L2224/81065 , H01L2224/81191 , H01L2224/812 , H01L2224/81385 , H01L2224/81801 , H01L2224/83907 , H01L2225/06513 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
摘要： A semiconductor device which includes a first semiconductor chip 10, a first electrode 12 formed on the first semiconductor chip 10, a second semiconductor chip 20 to which the first semiconductor chip 10 is mounted, a second electrode 22 with a protrusion 24, which is formed on the second semiconductor chip 20, and a solder bump 14 which bonds the first electrode 12 and the second electrode 22 to cover at least a part of a side surface of the protrusion 24, and a method for manufacturing thereof are provided.
摘要翻译：一种半导体器件，包括第一半导体芯片10，形成在第一半导体芯片10上的第一电极12，安装有第一半导体芯片10的第二半导体芯片20，形成有突起24的第二电极22，其形成以及与第一电极12和第二电极22接合以覆盖突起24的侧面的至少一部分的焊料凸点14及其制造方法。

20. 发明申请

US20100276801A1 SEMICONDUCTOR DEVICE AND METHOD TO MANUFACTURE THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100276801A1
公开(公告)日：2010-11-04
申请号：US12837323
申请日：2010-07-15
申请人： Masataka Hoshino , Ryoto Fukuyama , Koji Taya
发明人： Masataka Hoshino , Ryoto Fukuyama , Koji Taya
IPC分类号： H01L25/065 , H01L23/48 , H01L21/60 , H01L23/488 , H01L23/538
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2221/6834 , H01L2221/68359 , H01L2224/13009 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/16237 , H01L2224/29111 , H01L2224/2919 , H01L2224/81193 , H01L2224/81801 , H01L2224/83102 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01077 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/00014
摘要： A semiconductor device 100 includes a semiconductor substrate 14, a connection electrode 12 disposed on an upper surface of the semiconductor substrate 14 and connected to an integrated circuit thereon, a through electrode 20 which penetrates the semiconductor substrate 14 and the connection electrode 20, and an insulation portion 30 interposed between the semiconductor substrate 14 and the through electrode 20. The through electrode 20 is integrally formed to protrude outward from upper surfaces of the semiconductor substrate 14 and the connection electrode 12, and connected to the connection electrode 12 in a region where the through electrode 20 penetrates the connection electrode 12.
摘要翻译：半导体器件100包括半导体衬底14，连接电极12，其设置在半导体衬底14的上表面上并连接到其上的集成电路，贯穿半导体衬底14和连接电极20的贯通电极20和绝缘部分30插入在半导体衬底14和贯通电极20之间。贯通电极20一体地形成为从半导体衬底14和连接电极12的上表面向外突出，并连接到连接电极12，通孔电极20穿透连接电极12。

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