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11. 发明授权

US08836836B2 Radiation imaging apparatus and control method for radiation imaging apparatus 有权
标题翻译：辐射成像装置及放射成像装置的控制方法
公开(公告)号：US08836836B2
公开(公告)日：2014-09-16
申请号：US13237362
申请日：2011-09-20
申请人： Takashi Yamazaki , Kazumasa Matsumoto , Hidehiko Saito , Kanako Dowaki
发明人： Takashi Yamazaki , Kazumasa Matsumoto , Hidehiko Saito , Kanako Dowaki
IPC分类号： H04N5/335 , H04N5/217 , H04N5/32 , H04N5/365 , H04N5/3745
CPC分类号： H04N5/32 , H04N5/365 , H04N5/37457
摘要： A radiation imaging apparatus includes an imaging unit and an imaging control unit. The imaging control unit causes a switch unit, an accumulation unit, a removal unit, a holding unit, and an addition unit, which constitute a pixel circuit of the imaging unit, to operate at a timing before an imaging operation by the imaging unit so as to fix unstable voltages of the accumulation unit, the removal unit, the holding unit, and the addition unit to a predetermined voltage of a power supply connected via a switch unit.
摘要翻译：放射线摄像装置包括成像单元和成像控制单元。成像控制单元使构成摄像单元的像素电路的开关单元，累积单元，去除单元，保持单元和加法单元在成像单元的成像操作之前的定时进行操作将积存单元，去除单元，保持单元和加法单元的不稳定电压固定为经由开关单元连接的电源的预定电压。

12. 发明申请

US20140196505A1 GLASS PREFORM HEATING FURNACE 有权
标题翻译：玻璃预热加热炉
公开(公告)号：US20140196505A1
公开(公告)日：2014-07-17
申请号：US14129673
申请日：2012-06-13
申请人： Tadashi Enomoto , Iwao Okazaki , Takashi Yamazaki , Masatoshi Hayakawa
发明人： Tadashi Enomoto , Iwao Okazaki , Takashi Yamazaki , Masatoshi Hayakawa
IPC分类号： C03B37/029
CPC分类号： C03B37/029 , C03B37/01257 , C03B2205/63 , F27B17/00 , H05B3/62 , H05B2203/025
摘要： The present invention provides a glass preform heating furnace in which the occurrence of arching is suppressed. The glass preform heating furnace is equipped with a susceptor (3); a slit heater (4); an insulator; and a furnace body, wherein, in the case that the space between the slit heater (4) and the susceptor or between the slit heater (4) and the conductive member closest to the slit heater is D, that the maximum value of the electric field in this space is E1, that the number of the slits in the slit heater is N, that the slit width of the slit heater is S, and that the maximum value of the electric field in the slit space is E2, the values of D, N and S are set so that E1≧E2 is established.
摘要翻译：本发明提供一种玻璃预制件加热炉，其中抑制拱起的发生。玻璃预制件加热炉配有基座（3）; 狭缝加热器（4）; 绝缘体炉体，其中，狭缝加热器（4）与基座之间或狭缝加热器（4）与最靠近狭缝加热器的导电部件之间的间隔为D的情况下，电极的最大值在该空间中的场为E1，狭缝加热器中的狭缝数为N，狭缝加热器的狭缝宽度为S，狭缝空间中的电场的最大值为E2， D，N，S被设定为使E1≥220成立。

13. 发明申请

US20120015687A1 SEMICONDUCTOR PACKAGE AND MOBILE DEVICE USING THE SAME 有权
标题翻译：使用相同的半导体封装和移动设备
公开(公告)号：US20120015687A1
公开(公告)日：2012-01-19
申请号：US13181737
申请日：2011-07-13
申请人： Keiju YAMADA , Takashi Yamazaki , Masatoshi Fukuda , Yasuhiro Koshio
发明人： Keiju YAMADA , Takashi Yamazaki , Masatoshi Fukuda , Yasuhiro Koshio
IPC分类号： H04W88/02 , H01L23/552
CPC分类号： H01L23/552 , H01L23/3114 , H01L23/3128 , H01L23/49805 , H01L23/49816 , H01L23/49827 , H01L23/544 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2223/54433 , H01L2223/54486 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： According to an embodiment, a semiconductor package includes a semiconductor chip mounted on an interposer board, a encapsulant sealing the semiconductor chip, and a conductive shielding layer covering the encapsulant and at least part of a side surface of the interposer board. The interposer board has plural vias through an insulating substrate. A part of the plural vias has a cutting plane exposing to the side surface of the interposer board and cut in a thickness direction of the interposer board. The cutting plane of the via is electrically connected to the conductive shielding layer.
摘要翻译：根据实施例，半导体封装包括安装在插入板上的半导体芯片，密封半导体芯片的密封剂以及覆盖密封剂的导电屏蔽层和插入板的侧表面的至少一部分。插入板具有通过绝缘基板的多个通路。多个通孔的一部分具有暴露于插入板的侧表面并在插入板的厚度方向上切割的切割平面。通孔的切割平面电连接到导电屏蔽层。

14. 发明授权

US07668760B2 Distribution management device, distribution management method, program storage medium and distribution management system 失效
标题翻译：配送管理设备，配送管理方式，程序存储介质和配送管理系统
公开(公告)号：US07668760B2
公开(公告)日：2010-02-23
申请号：US09800524
申请日：2001-03-08
申请人： Kunimasa Suzuki , Yukari Takehira , Yasuhiro Ueda , Shigeaki Arai , Michiko Sekikawa , Lisa Naomi Schlais , Takashi Yamazaki , Tsuyoshi Maeda , Noriko Ishii , Kentaro Tanigaki , Hirokazu Takahashi , Futaba Shinohara
发明人： Kunimasa Suzuki , Yukari Takehira , Yasuhiro Ueda , Shigeaki Arai , Michiko Sekikawa , Lisa Naomi Schlais , Takashi Yamazaki , Tsuyoshi Maeda , Noriko Ishii , Kentaro Tanigaki , Hirokazu Takahashi , Futaba Shinohara
IPC分类号： G06Q10/00 , G06Q20/14 , G06G1/14
CPC分类号： G06Q10/087 , G06Q20/203
摘要： A distribution management device, a distribution management method, a program storage medium and a distribution management system are disclosed. The client order data of the merchandise 4 of the sales channel utilized the internet 3 and the store order data of the merchandise 4 for the quantity sold of the sales channels excluding the Internet 3 are received by the sales managing server 20 via the internet 3. The stock of merchandise 4 is controlled by the settlement/delivery instructing server 21 based on the client and store order data. The actual sales condition of merchandise in each sales channel is grasped by the shipment control server 55 based on the storage data and the delivery condition data obtained from the client and store order data and the storage data and delivery condition data obtained from the settlement/delivery instructing server 21, and the supply of merchandise 4 to the manufacturing factory will be instructed based on the actual sales condition. Thus, the distribution stocks to each of sales channels can be one-dimensionally controlled and can be efficiently distributed in the market based on the actual sales information. And thereby, the stocks can be constantly and certainly secured to various sales channels.
摘要翻译：公开了一种分发管理装置，分发管理方法，程序存储介质和分发管理系统。由销售管理服务器20经由因特网3接收销售渠道的商品4的客户订单数据，互联网3使用商品4的商店订单数据，而不包括因特网3的销售渠道销售的数量。商品4的库存由结算/发货指示服务器21基于客户端和存储订单数据来控制。基于从客户获得的存储数据和传送条件数据，存储订单数据以及从结算/传送获得的存储数据和传送条件数据，由出货控制服务器55掌握每个销售通道中的商品的实际销售状况指示服务器21，并且将根据实际销售条件指示向制造工厂提供商品4。因此，可以一维地控制各销售渠道的分销股，并且可以根据实际的销售信息有效地在市场上分配。因此，股票可以不断地确定到各种销售渠道。

15. 发明授权

US07499340B2 Semiconductor memory device and defect remedying method thereof 失效
标题翻译：半导体存储器件及其缺陷补救方法
公开(公告)号：US07499340B2
公开(公告)日：2009-03-03
申请号：US12007336
申请日：2008-01-09
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C7/10
CPC分类号： H01L24/06 , G11C5/025 , G11C5/04 , G11C5/063 , G11C11/406 , G11C29/06 , G11C29/12005 , G11C29/12015 , G11C29/24 , G11C29/34 , G11C29/50 , G11C29/50012 , G11C29/70 , G11C29/80 , G11C29/804 , G11C29/832 , G11C29/844 , G11C2029/2602 , H01L24/05 , H01L24/45 , H01L24/48 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.
摘要翻译：形成在半导体芯片上的半导体存储器件包括第一存储器阵列，多个第二存储器阵列，第一电压发生器和第一焊盘。半导体芯片被分为第一，第二和第三矩形区域，第三矩形区域布置在第一矩形区域和第二矩形区域之间。第一存储器阵列形成在第一矩形区域中。第二存储器阵列形成在第二矩形区域中。电压发生器和第一接合焊盘布置在第三矩形区域中。第一接合焊盘布置在第一矩形区域和电压发生器之间，并且在电压发生器和第二存储器阵列之间没有布置接合焊盘。

16. 发明申请

US20080205111A1 Semiconductor memory device and defect remedying method thereof 失效
标题翻译：半导体存储器件及其缺陷补救方法
公开(公告)号：US20080205111A1
公开(公告)日：2008-08-28
申请号：US12007336
申请日：2008-01-09
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C5/02 , G11C7/00
CPC分类号： H01L24/06 , G11C5/025 , G11C5/04 , G11C5/063 , G11C11/406 , G11C29/06 , G11C29/12005 , G11C29/12015 , G11C29/24 , G11C29/34 , G11C29/50 , G11C29/50012 , G11C29/70 , G11C29/80 , G11C29/804 , G11C29/832 , G11C29/844 , G11C2029/2602 , H01L24/05 , H01L24/45 , H01L24/48 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L27/11898 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01083 , H01L2924/01084 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.
摘要翻译：形成在半导体芯片上的半导体存储器件包括第一存储器阵列，多个第二存储器阵列，第一电压发生器和第一焊盘。半导体芯片被分为第一，第二和第三矩形区域，第三矩形区域布置在第一矩形区域和第二矩形区域之间。第一存储器阵列形成在第一矩形区域中。第二存储器阵列形成在第二矩形区域中。电压发生器和第一接合焊盘布置在第三矩形区域中。第一接合焊盘布置在第一矩形区域和电压发生器之间，并且在电压发生器和第二存储器阵列之间没有布置接合焊盘。

17. 发明授权

US07373456B2 Disk array apparatus and disk array apparatus controlling method 有权
标题翻译：磁盘阵列装置和磁盘阵列装置控制方法
公开(公告)号：US07373456B2
公开(公告)日：2008-05-13
申请号：US11604216
申请日：2006-11-27
申请人： Takashi Yamazaki , Kazuo Hakamata , Azuma Kano
发明人： Takashi Yamazaki , Kazuo Hakamata , Azuma Kano
IPC分类号： G06F12/00
CPC分类号： G06F3/0625 , G06F1/3221 , G06F1/3268 , G06F3/0634 , G06F3/0653 , G06F3/0659 , G06F3/0689 , G06F11/1662 , G06F11/2094 , G06F11/2097 , G11B19/00 , Y02D10/154 , Y02D50/20
摘要： Times at which requests for a data read or data write from/to a logical volume are received are stored in memory as access times of a RAID group making up the logical volume. When a predetermined time has elapsed after the access time, a number of the hard disk drives according to the redundancy of the RAID group are set to a power saving mode. Assume there are first hard disk drives and second hard disk drives having shorter lifes and the RAID group exceeds a predetermined time after the access time. When the RAID group consists of only the first drives, a number of the first drives according to the redundancy of the RAID group are set to a power saving mode and when it consists of only the second drives, an arbitrary number of second drives are set to a power saving mode.
摘要翻译：接收来自/向逻辑卷的数据读取或数据写入的请求的时间作为构成逻辑卷的RAID组的访问时间被存储在存储器中。当在访问时间之后经过预定时间时，根据RAID组的冗余将多个硬盘驱动器设置为省电模式。假设有第一个硬盘驱动器和第二个硬盘驱动器具有较短的寿命，并且RAID组在访问时间之后超过预定时间。当RAID组仅由第一个驱动器组成时，根据RAID组的冗余将多个第一个驱动器设置为省电模式，并且当仅由第二个驱动器组成时，将设置任意数量的第二个驱动器进入省电模式。

18. 发明授权

US07005998B2 Malfunction-detection method during die clamping step in injection molding machines 有权
标题翻译：注塑机模具夹紧步骤中的故障检测方法
公开(公告)号：US07005998B2
公开(公告)日：2006-02-28
申请号：US11103557
申请日：2005-04-12
申请人： Takashi Yamazaki , Haruyuki Matsubayashi , Takeshi Abe
发明人： Takashi Yamazaki , Haruyuki Matsubayashi , Takeshi Abe
IPC分类号： G08B21/00
CPC分类号： B29C45/844 , B29C45/32 , B29C45/33 , B29C45/7653 , B29C45/768 , B29C2045/1792 , B29C2945/76006 , B29C2945/76013 , B29C2945/7602 , B29C2945/76083 , B29C2945/76163 , B29C2945/76173 , B29C2945/76224 , B29C2945/76227 , B29C2945/76257 , B29C2945/76307 , B29C2945/76391 , B29C2945/76498 , B29C2945/76505 , B29C2945/76785 , B29C2945/76913 , B29C2945/76943 , B29C2945/76973
摘要： The present invention relates to a method of detecting a malfunction during a die clamping step in an injection molding machine. A reference pattern is taken which shows a relation between a die clamping force and a position of a movable platen when die clamping is normally carried out. One or more monitoring sections are set in advance with respect to that position on the basis of the reference pattern and an allowable limit value of a die clamping force in the respective monitoring sections is also set in advance in a form of a linear function of the position. The die clamping force is monitored in the respective monitoring section during a respective die clamping step and, when its value exceeds the allowable limit value, it is decided that a malfunction occurs and an alarm is issued.
摘要翻译：本发明涉及一种在注射成型机中检测模具夹紧步骤期间的故障的方法。示出了当正常进行模具夹紧时，模具夹紧力与可动压板的位置之间的关系的参考模式。基于参考图案相对于该位置预先设置一个或多个监视部分，并且预先在各监视部分中的模具夹紧力的允许极限值以位置。在相应的模具夹紧步骤期间，在相应的监视部分中监视模具夹紧力，并且当其值超过允许极限值时，确定发生故障并发出报警。

19. 发明授权

US06946932B2 Surface acoustic wave resonator with an interdigital transducer divided into regions having a different fixed pitch 有权
标题翻译：具有叉指换能器的表面声波谐振器被分成具有不同固定间距的区域
公开(公告)号：US06946932B2
公开(公告)日：2005-09-20
申请号：US10679480
申请日：2003-10-07
申请人： Michiaki Takagi , Yoshio Maeda , Takashi Yamazaki , Keigo Iizawa
发明人： Michiaki Takagi , Yoshio Maeda , Takashi Yamazaki , Keigo Iizawa
IPC分类号： H01L41/09 , H01L41/18 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/25 , H03H9/02551 , H03H9/14582
摘要： In a substrate in which a reflection coefficient γ of a surface acoustic wave per electrode is small, the invention obtains a Q value or a CI value level, which is equivalent to or higher than that of a related art product, at a device size which is equivalent to the related art product which addresses the problem that the size of a surface acoustic wave resonator becomes larger. A surface acoustic wave resonator includes one interdigital transducer to excite a surface acoustic wave in a propagation direction x on a piezoelectric plate and a pair of reflectors arranged on both sides thereof in the propagation direction. The interdigital transducer is divided into three regions. The electrode fingers of the interdigital transducer of each region are formed at a fixed pitch which differs within 2%. The surface acoustic wave resonator possesses a single peak response. The form in which a vibration displacement envelope amplitude in the interdigital transducer region is normalized is a form which takes a maximum value 1 at the center position, which smoothly takes a value in a range of 0.33 to 0.53 at a position ¼ from both ends, and which smoothly takes a value in a range of 0.048 to 0.177 at positions at both ends.
摘要翻译：在每个电极的表面声波的反射系数γ小的基板中，本发明以如下装置尺寸获得与现有技术产品相同或更高的Q值或CI值电平相当于解决声表面波谐振器的尺寸变大的问题的现有技术的产品。表面声波谐振器包括一个叉指式换能器，以在压电板上的传播方向x上激发表面声波，并且在传播方向的两侧布置一对反射器。叉指换能器分为三个区域。每个区域的叉指换能器的电极指以固定的间距形成，其在2％内不同。表面声波谐振器具有单峰响应。叉指换能器区域中的振动位移包络振幅被归一化的形式是在中心位置处取最大值1的形式，在两端的位置¼平滑地取0.33〜0.53的范围内的值，并且在两端的位置平滑地获得0.048〜0.177的范围的值。

20. 发明授权

US06919622B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06919622B2
公开(公告)日：2005-07-19
申请号：US10774405
申请日：2004-02-10
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0695 , H01L2224/85399
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要翻译：由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小杂散容量，提高信号传输速率和减少电气噪声。

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