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    • 11. 发明申请
    • HEATING DEVICE OF THE LIGHT IRRADIATION TYPE
    • 加热装置的光照射类型
    • US20080219650A1
    • 2008-09-11
    • US11848359
    • 2007-08-31
    • Shinji SuzukiTetsuya KitagawaKyohei Seki
    • Shinji SuzukiTetsuya KitagawaKyohei Seki
    • F21V9/00
    • H01L21/67115H01L21/67109H05B3/0047
    • A heating device of the light irradiation type having an article to be heated, a guard ring located on the periphery of that article, multiple lamps located above the article to be heated and the guard ring, and a reflecting mirror located above the lamps, in which a light diffusion part is located in the upper region corresponding to the article to be heated so that the diffused light projects onto the entire surface of the article to be heated. The light diffusion part can be formed, for example, on a reflecting mirror, an optically transparent window part located between the article to be heated and the lamps or a light diffusion area formed on the light-emitting bulbs of the lamps. The size of the region occupied by the light diffusion part is such that diffused light is not projected to the guard ring.
    • 一种具有待加热物品的光照射型加热装置,位于该物品周边的保护环,位于被加热物上方的多个灯和防护环,以及位于灯的上方的反射镜, 光扩散部位于对应于被加热物的上部区域,使得漫射光投射到待加热物品的整个表面上。 光漫射部可以例如形成在反射镜上,位于待加热物品与灯之间的光学透明窗部或形成在灯的发光灯泡上的光扩散区域。 由光扩散部占据的区域的大小使得漫射光不会被投射到防护环。
    • 12. 发明授权
    • Line-narrowed gas laser system
    • 线窄气体激光系统
    • US07072375B2
    • 2006-07-04
    • US10371478
    • 2003-02-20
    • Tatsuya ArigaKyohei SekiOsamu Wakabayashi
    • Tatsuya ArigaKyohei SekiOsamu Wakabayashi
    • H01S3/22
    • H01S3/225H01S3/134H01S3/139
    • In a line-narrowed gas laser system such as a line-narrowed molecular fluorine laser system, ASE is cut off to obtain a spectral linewidth of 0.2 pm or lower and a spectral purity of 0.5 pm or lower. The laser system comprises a laser chamber filled with an F2-containing laser gas, discharge electrodes located in the laser chamber, a laser resonator and a line-narrowing module located in the laser resonator with a wavelength selection element, so that a line-narrowed laser beam emerges from the laser resonator. To cut off ASE from the laser beam emerging from the laser resonator, the duration from laser emission by discharge to generation of a laser beam is preset. Rise of the sidelight is made so gentle that the starting point of a laser pulse can exist after the time of the first sidelight peak.
    • 在线狭窄的分子氟激光系统等线狭窄气体激光器系统中,切断ASE以获得0.2μm以下的光谱线宽和0.5μm以下的光谱纯度。 激光系统包括填充有含2激光气体的激光室,位于激光室中的放电电极,激光谐振器和位于激光谐振器中的具有波长选择的线窄模块 元件,使得线状窄激光束从激光谐振器中涌出。 为了从激光谐振器中产生的激光束切断ASE,预设了通过放电激光发射到产生激光束的持续时间。 侧光的上升使得激光脉冲的起始点在第一个侧光峰值时间之后可以存在。
    • 14. 发明授权
    • Heating process of the light irradiation type
    • 光照射类型的加热过程
    • US07756403B2
    • 2010-07-13
    • US11536057
    • 2006-09-28
    • Kyohei SekiShinji SuzukiYoichi Mizukawa
    • Kyohei SekiShinji SuzukiYoichi Mizukawa
    • A45D20/40
    • H01L21/67115
    • A light irradiation heating process in which, even in the case of an asymmetrical physical property of an article to be treated, uniform heating is possible, or in which heating can be performed such that the article acquires a desired physical property after heat treatment. Based on the measured value of the local physical property of the article to be treated, the emissivity distribution is obtained and the distribution pattern of the light intensity on the article to be treated is determined. According to this light intensity pattern, the individual intensity of the light emitted from respective light emitting parts of lamp units of the heating device are determined beforehand. According to this determined result, the intensity of the light emitted from the respective light emitting parts of the lamp units are controlled individually, and thus, the article to be treated is irradiated with light.
    • 即使在待处理物品的不对称物理性质的情况下也可以进行均匀加热,或者可以进行加热,使得制品在热处理后获得所需的物理性质的光照射加热过程。 根据待处理物品的局部物理性质的测定值,得到辐射率分布,并确定待处理物品上光强度的分布格局。 根据该光强度图案,预先确定从加热装置的灯单元的各个发光部分发射的光的单独强度。 根据该确定结果,单独控制从灯单元的各个发光部分发射的光的强度,从而照射待处理的物品。
    • 17. 发明授权
    • Two stage laser system
    • 两级激光系统
    • US06879617B2
    • 2005-04-12
    • US10438737
    • 2003-05-14
    • Tatsuya ArigaKyohei SekiOsamu Wakabayashi
    • Tatsuya ArigaKyohei SekiOsamu Wakabayashi
    • H01S3/131H01S3/036H01S3/08H01S3/134H01S3/225H01S3/23H01S3/22
    • H01S3/10092H01S3/036H01S3/08004H01S3/08009H01S3/08059H01S3/134H01S3/225H01S3/2258H01S3/2316
    • The present invention relates to a two stage laser system in which a desired spectral line width can be obtained at high output even when the integrated spectral characteristic of oscillator laser does not have the desired spectral line width, comprising an oscillator laser device 10 which has discharge electrodes 2 within a laser chamber 1 filled with laser gas containing F2 and emits laser beam which is band-narrowed by means of a band narrowing module 3 arranged in a laser resonator, and an amplifier laser device 20 which has discharge electrodes 2 within a laser chamber 1 filled with laser gas containing F2 and amplifies laser pulse injected from said oscillator laser device 10. In the system, a synchronous time interval having a predetermined spectral line width exists in laser pulse from the oscillator laser 10, and the system is set such that a discharge occurs in the amplifier laser 20 within the synchronous time interval.
    • 本发明涉及一种二阶段激光系统,其中即使当振荡器激光器的积分光谱特性不具有期望的谱线宽度时,也可以以高输出获得期望的谱线宽度,包括具有放电的振荡器激光装置10 在激光室1内的充满了含有F2的激光气体的激光器2内的电极2,并且发射通过设置在激光谐振器中的带窄化模块3而带宽化的激光束,以及在激光器内具有放电电极2的放大器激光装置20 室1充满含有F2的激光气体,并放大从所述振荡器激光装置10注入的激光脉冲。在该系统中,具有预定光谱线宽的同步时间间隔存在于来自振荡器激光器10的激光脉冲中,并且系统被设置为 在同步时间间隔内在放大器激光器20中发生放电。
    • 18. 发明授权
    • Wavelength monitoring apparatus for laser light for semiconductor exposure
    • 用于半导体曝光的激光用波长监视装置
    • US06509970B1
    • 2003-01-21
    • US09599289
    • 2000-06-21
    • Kyohei SekiKazuaki HottaTakao Kobayashi
    • Kyohei SekiKazuaki HottaTakao Kobayashi
    • G01B902
    • G01J9/0246
    • The present invention relates to a wavelength monitoring apparatus capable of measuring both standard light and laser light for semiconductor exposure simultaneously and highly accurately, without a time lag. Entrance-side optical systems 21 and 22 allow light from a laser 20 for semiconductor exposure and reference light from a He—Ne laser 10 to be incident on different areas of a single etalon 1 in the form of diverging light, converging light or diffused light in such a manner that the respective center axes thereof are displaced relative to each other. Two focusing optical systems 31 and 32 are provided in approximately coaxial relation to the respective center axes of the laser light and reference light passing through the etalon 1. A one-dimensional array optical sensor 4 is placed in a plane P coincident with the back focal planes of the focusing optical systems 31 and 32 to receive interference fringes produced by the laser light and the reference light. The positions of the interference fringes on the one-dimensional array optical sensor 4 are detected to calculate the wavelength of the laser light for semiconductor exposure.
    • 本发明涉及一种波长监视装置,能够同时高精度地测量用于半导体曝光的标准光和激光,而不会出现时间滞后。 入射侧光学系统21和22允许来自激光器20的光用于半导体曝光,并且来自He-Ne激光器10的参考光以发散光,会聚光或漫射光的形式入射到单个标准具1的不同区域 使得其各自的中心轴线相对于彼此移位。 两个聚焦光学系统31和32以与激光的各个中心轴和通过标准具1的参考光大致同轴的方式设置。一维阵列光学传感器4放置在与后焦点重合的平面P中 聚焦光学系统31和32的平面用于接收由激光和参考光产生的干涉条纹。 检测干涉条纹在一维阵列光学传感器4上的位置,以计算用于半导体曝光的激光的波长。