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11. 发明授权

US5034372A Plasma based method for production of superconductive oxide layers 失效
标题翻译：用于生产超导氧化物层的基于等离子体的方法
公开(公告)号：US5034372A
公开(公告)日：1991-07-23
申请号：US281044
申请日：1988-12-07
申请人： Shigeru Matsuno , Yoshio Kubo , Kiyoshi Yoshizaki , Mitsunobu Wakata , Syouji Miyashita , Fumio Fujiwara
发明人： Shigeru Matsuno , Yoshio Kubo , Kiyoshi Yoshizaki , Mitsunobu Wakata , Syouji Miyashita , Fumio Fujiwara
IPC分类号： C23C16/40 , C23C16/448 , H01L39/24
CPC分类号： H01L39/2438 , C23C16/408 , C23C16/4486 , Y10S505/734 , Y10S505/737 , Y10S505/74
摘要： An improved method for producing superconductive oxide substance, wherein a solution containing therein a plurality of elements to constitute the superconductive oxide substance is atomized into mists, then the thus atomized mists are transported on a carrier gas into a chemical reaction device, and, after the chemical reaction in this chemical reaction device, the superconductive oxide substance is deposited on a substrate in a desired shape, with further heat-treatment of the thus deposited superconductive oxide substance in an oxygen-containing atmosphere at a temperature ranging from 200.degree. C. to 1,200.degree. C.A method for producing superconductive oxide powder, wherein a solution containing therein a plurality of elements, which have been blended in a manner to exhibit the superconductive property by heat-treatment, is atomized into mists, then the atomized solution of the superconductive substance is heat-treated, and the resultant finely divided substance as heat-treated is separated and collected.
摘要翻译：一种改进的超导氧化物物质的制造方法，其中含有构成超导氧化物物质的多个元素的溶液被雾化成雾，然后将这样雾化的雾在载气上输送到化学反应装置中，在该化学反应装置中的化学反应中，将超导氧化物物质以所需的形状沉积在基板上，进一步在含氧气氛中在200℃至200℃的温度范围内热处理如此沉积的超导氧化物物质 1200℃。一种制造超导氧化物粉末的方法，其中含有多个元素的溶液以通过热处理显示出超导性的方式被混合，被雾化成雾状，对超导物质进行热处理，所得到的经热处理的精细分散物质为sepa 评分和收集。

12. 发明授权

US08039396B2 Method for manufacturing photovoltaic device 有权
标题翻译：光伏器件制造方法
公开(公告)号：US08039396B2
公开(公告)日：2011-10-18
申请号：US12531905
申请日：2007-12-20
申请人： Kunihiko Nishimura , Shigeru Matsuno
发明人： Kunihiko Nishimura , Shigeru Matsuno
IPC分类号： H01L21/461
CPC分类号： H01L31/1804 , H01L31/02363 , Y02E10/547 , Y02P70/521
摘要： Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.
摘要翻译：提供一种能够容易地形成纵横比大于0.5的纹理的光电器件的制造方法。制造光伏器件的方法包括以下步骤：在硅衬底上形成耐蚀刻膜; 在抗蚀膜的多个细孔中，将照射的激光束的焦点深度调整为10μm以上，使作为基底层的硅基板的表面露出; 并且蚀刻所述硅衬底的暴露表面，其中暴露所述硅衬底的表面的步骤包括在位于所述硅衬底下方的所述硅衬底的表面中的每个所述细孔的同心位置处形成微细凹槽，耐性膜。

13. 发明申请

US20060278831A1 Infrared inspection apparatus, infrared inspecting method and manufacturing method of semiconductor wafer 审中-公开
标题翻译：红外线检测装置，半导体晶片的红外检查方法及制造方法
公开(公告)号：US20060278831A1
公开(公告)日：2006-12-14
申请号：US11447997
申请日：2006-06-07
申请人： Norihisa Matsumoto , Shigeru Matsuno
发明人： Norihisa Matsumoto , Shigeru Matsuno
IPC分类号： G01N21/59
CPC分类号： G01N21/9501 , G01N21/59 , G01N21/9505
摘要： An infrared inspection apparatus includes: an infrared light source operable to irradiate an inspection object with infrared rays; an infrared lens operable to collect infrared rays which have passed through the inspection object; an infrared camera operable to receive the infrared rays collected by the infrared lens and to convert the infrared rays received into an electric signal to be output; a monitor operable to receive the electric signal from the infrared camera and to convert the electric signal into an image signal and to display an image based on the image signal; and an infrared ray leakage preventing member in at least one of a light path between the infrared light source and a periphery of the inspection object and a light path between the periphery of the inspection object and the infrared lens to prevent infrared rays from the infrared light source from reaching the infrared lens without passing through the inspection object.
摘要翻译：红外检查装置包括：红外光源，其可操作以用红外线照射检查对象; 红外透镜，其可操作以收集已经通过检查对象的红外线; 红外摄像机，其可操作以接收由红外线透镜收集的红外线，并将接收到的红外线转换成要输出的电信号; 监视器，其可操作以从所述红外摄像机接收电信号，并将所述电信号转换为图像信号并基于所述图像信号显示图像; 以及在所述红外线光源与所述检查对象周围的光路中的至少一个中的红外线泄漏防止部件以及所述被检查物体的周围与所述红外线透镜之间的光路，以防止来自所述红外线的红外线来源到达红外透镜而不通过检查对象。

14. 发明授权

US06212059B1 Capacitor including barium strontium titanate film 有权
标题翻译：电容器包括钛酸钡锶薄膜
公开(公告)号：US06212059B1
公开(公告)日：2001-04-03
申请号：US09592862
申请日：2000-06-13
申请人： Fusaoki Uchikawa , Shigeru Matsuno , Shinichi Kinouchi , Hisao Watarai
发明人： Fusaoki Uchikawa , Shigeru Matsuno , Shinichi Kinouchi , Hisao Watarai
IPC分类号： H01G410
CPC分类号： C23C16/448 , C23C16/409 , H01G4/085 , H01G4/1227 , H01L21/31691 , H01L28/40 , H01L28/55
摘要： A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.
摘要翻译：一种用于包括钡锶钛酸盐系介电膜的存储器件的电容器，该膜由化学气相沉积源材料形成，该化学气相沉积源材料包括溶解在四氢呋喃中的各种钡，锶和钛的有机金属化合物的液体溶液。

15. 发明授权

US6103002A CVD method for forming oxide-system dielectric thin film 失效
公开(公告)号：US6103002A
公开(公告)日：2000-08-15
申请号：US112569
申请日：1998-07-09
申请人： Fusaoki Uchikawa , Shigeru Matsuno , Shinichi Kinouchi , Hisao Watarai
发明人： Fusaoki Uchikawa , Shigeru Matsuno , Shinichi Kinouchi , Hisao Watarai
IPC分类号： C23C16/40 , C23C16/448 , H01L21/02 , H01L21/314 , H01L21/316
CPC分类号： C23C16/448 , C23C16/409 , H01G4/085 , H01G4/1227 , H01L21/31691 , H01L28/40 , H01L28/55
摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

16. 发明申请

US20090212026A1 WIRE ELECTRIC DISCHARGE MACHINING METHOD, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SOLAR BATTERY CELL MANUFACTURING METHOD 有权
标题翻译：电线放电加工方法，半导体制造方法和太阳能电池组件制造方法
公开(公告)号：US20090212026A1
公开(公告)日：2009-08-27
申请号：US12093836
申请日：2005-11-16
申请人： Tatsushi Sato , Yoshihito Imai , Teiji Takahashi , Takeshi Sakata , Tomoko Sendai , Yoichiro Nishimoto , Shigeru Matsuno , Takeyuki Maegawa , Takaaki Iwata
发明人： Tatsushi Sato , Yoshihito Imai , Teiji Takahashi , Takeshi Sakata , Tomoko Sendai , Yoichiro Nishimoto , Shigeru Matsuno , Takeyuki Maegawa , Takaaki Iwata
IPC分类号： B23H1/00
CPC分类号： B23H7/02 , B23H9/00
摘要： Provided are a wire electric discharge machining method for poorly conductive materials, such as solar cell silicon, and a semiconductor wafer manufacturing method and a solar battery cell manufacturing method based on the wire electric discharge machining method. Electrical discharge machining of a high volume resistivity, hard and brittle materials, having a volume resistivity that is equal to or higher than 0.5 Ω·cm and equal to or lower than 5 Ω·cm is performed by applying a pulse voltage having a pulse width that is equal to or higher than 1 μsec and equal to or lower than 4 μsec and having a peak current at the time of machining a wire electrode that is equal to or higher than 10A and equal to or lower than 50A to a wire electrode and generating a discharge pulse between the wire electrode and a subject to be machined.
摘要翻译：本发明提供一种导电材料的导电放电加工方法，例如太阳能电池硅，半导体晶片的制造方法以及基于该放电加工方法的太阳能电池单元的制造方法。通过施加具有脉冲宽度的脉冲电压来执行体积电阻率等于或高于0.5Ω·cm且等于或小于5Ω·cm的高体积电阻率，硬脆性材料的放电加工等于或高于1个音箱并且等于或低于4个音箱，并且在对线电极进行等于或高于10A且等于或小于50A的线电极加工时具有峰值电流，以及在线电极和待加工对象之间产生放电脉冲。

17. 发明申请

US20080029027A1 Plasma Cvd Device 审中-公开
标题翻译：等离子Cvd设备
公开(公告)号：US20080029027A1
公开(公告)日：2008-02-07
申请号：US11577008
申请日：2005-10-07
申请人： Teruhiko Kumada , Naoki Yasuda , Hideharu Nobutoki , Norihisa Matsumoto , Shigeru Matsuno
发明人： Teruhiko Kumada , Naoki Yasuda , Hideharu Nobutoki , Norihisa Matsumoto , Shigeru Matsuno
IPC分类号： C23C16/00
CPC分类号： C23C16/38 , H01L21/318 , H01L21/76801
摘要： The present invention provides a plasma CVD device including means for supplying a compound with borazine skeleton, a plasma generator for generating a plasma, and means for applying a negative charge to an electrode for placing a substrate. According to the present invention, it is possible to provide a plasma CVD device which stably provides a low dielectric constant and a high mechanical strength over a long period of time, reducing the amount of a gas component (outgas) emitted in heating the film, and causing no trouble in a device manufacturing process.
摘要翻译：本发明提供了一种等离子体CVD装置，其包括用于提供化合物与硼嗪骨架的装置，用于产生等离子体的等离子体发生器，以及用于将负电荷施加到用于放置基板的电极的装置。根据本发明，可以提供一种能够长时间稳定地提供低介电常数和高机械强度的等离子体CVD装置，减少在加热膜时排出的气体成分（废气）的量，并且在设备制造过程中没有麻烦。

18. 发明申请

US20070085226A1 Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method 有权
标题翻译：蒸发系统液体物质供应装置，蒸发器，蒸发性能评价方法
公开(公告)号：US20070085226A1
公开(公告)日：2007-04-19
申请号：US11604235
申请日：2006-11-27
申请人： Naoki Yoshioka , Tatsushi Kawamoto , Mitsushi Kawao , Shigeru Matsuno , Akira Yamada , Shoji Miyashita , Fusaoki Uchikawa
发明人： Naoki Yoshioka , Tatsushi Kawamoto , Mitsushi Kawao , Shigeru Matsuno , Akira Yamada , Shoji Miyashita , Fusaoki Uchikawa
IPC分类号： B01F3/04
CPC分类号： F16K11/207 , B01D1/0082 , C23C16/448 , C23C16/4486 , F16K31/1221 , Y10S261/65
摘要： In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.
摘要翻译：在液体物质供给装置中，三端口二阀方向控制阀设置在输送管线中，物质容器和输送管线通过四端口三阀方向控制阀连接在一起，使得四端口三阀方向控制阀和物质容器可以作为一个单元从输送管线中取出。此外，在蒸发器中，设置有用于包围内部导管的端部的孔部件，在内部导管的端部，将由气体和与其混合的液体物质构成的混合物流动，将用于雾化的气体通过间隙喷射到蒸发室内限定在内部管道和孔口构件之间。此外，可以根据液体物质的性质独立地控制蒸发室中的汽化表面的温度。

19. 发明授权

US06470144B1 Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby 失效
标题翻译：用于化学气相沉积设备的蒸发器，化学气相沉积设备和由此制造的半导体器件
公开(公告)号：US06470144B1
公开(公告)日：2002-10-22
申请号：US09444556
申请日：1999-11-19
申请人： Masayoshi Tarutani , Tsuyoshi Horikawa , Takaaki Kawahara , Mikio Yamamuka , Shigeru Matsuno , Takehiko Sato
发明人： Masayoshi Tarutani , Tsuyoshi Horikawa , Takaaki Kawahara , Mikio Yamamuka , Shigeru Matsuno , Takehiko Sato
IPC分类号： C23C1600
CPC分类号： C23C16/4486
摘要： There are provided a vaporizer for use with a CVD apparatus and a CVD apparatus, capable of long-term, reliable and efficient production of CVD film with good properties, and a semiconductor device manufactured employing the same. The vaporizer for use with a CVD apparatus is comprised of a material introducing tube, a vaporization chamber and a cooling member. The material introducing tube transports a mixture containing a solution of a material for the CVD film and a gas carrying the solution. The vaporization chamber is connected to the material introducing tube to vaporize the material introduced through the material introducing tube. The cooling member cools that portion of the material introducing tube adjacent to the vaporization chamber.
摘要翻译：本发明提供一种能够长期，可靠，高效地生产具有良好性能的CVD膜的CVD设备和CVD设备使用的蒸发器，以及使用该蒸发器制造的半导体器件。用于CVD装置的蒸发器由材料导入管，蒸发室和冷却构件组成。材料导入管输送含有用于CVD膜的材料的溶液和携带溶液的气体的混合物。蒸发室连接到材料导入管，以蒸发通过材料导入管引入的材料。冷却部件冷却与蒸发室相邻的材料导入管的那部分。

20. 发明授权

US06236559B1 Capacitor 有权
标题翻译：电容器
公开(公告)号：US06236559B1
公开(公告)日：2001-05-22
申请号：US09461732
申请日：1999-12-16
申请人： Fusaoki Uchikawa , Shigeru Matsuno , Shinichi Kinouchi , Hisao Watarai
发明人： Fusaoki Uchikawa , Shigeru Matsuno , Shinichi Kinouchi , Hisao Watarai
IPC分类号： H01G410
CPC分类号： H01L28/40 , C23C16/409 , C23C16/448 , H01L21/31691 , H01L28/55
摘要： A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.
摘要翻译：包括通过化学气相沉积沉积的金属氧化物电介质膜的电容器包括将至少一种有机金属CVD前体化合物溶解在包括四氢呋喃的溶剂体系中以形成液体溶液; 蒸发包含至少一种有机金属化合物的液体溶液; 以及通过将至少一部分来自所述汽化溶液的所述至少一种有机金属化合物沉积在基底上而形成所述金属氧化物电介质薄膜。

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