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11. 发明申请

US20100072856A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20100072856A1
公开(公告)日：2010-03-25
申请号：US12629924
申请日：2009-12-03
申请人： Michio KADOTA , Takeshi NAKAO
发明人： Michio KADOTA , Takeshi NAKAO
IPC分类号： H01L41/047
CPC分类号： H03H9/02834 , H03H9/02559 , H03H9/02653
摘要： A surface acoustic wave device includes a LiTaO3 substrate, and an IDT having a high reflection coefficient, which has a relatively high electromechanical coupling coefficient k2, and which can obtain superior resonance characteristics and/or filter characteristics. In a surface acoustic wave device in which a plurality of grooves is provided in an upper surface of a LiTaO3 substrate and an IDT having a plurality of electrode fingers made of a metal filled in the plurality of grooves, the following equation is satisfied:(ρ3×C44)1/2>1.95×1011, where ρ represents the density of the metal defining the IDT, and C44 represents the stiffness thereof.
摘要翻译：表面声波装置包括LiTaO 3衬底和具有高反射系数的IDT，其具有相对较高的机电耦合系数k2，并且其可以获得优异的谐振特性和/或滤波器特性。在其中在LiTaO 3基板的上表面设置有多个槽的ID声表面波装置和具有由填充在多个槽中的金属制成的多个电极指的IDT，满足以下等式：（＆rgr ; 3×C44）1/2> 1.95×1011，其中＆rgr; 表示限定IDT的金属的密度，C44表示其刚度。

12. 发明申请

US20080160178A1 SURFACE ACOUSTIC WAVE DEVICE 审中-公开
标题翻译：表面声波设备
公开(公告)号：US20080160178A1
公开(公告)日：2008-07-03
申请号：US11960074
申请日：2007-12-19
申请人： Kenji NISHIYAMA , Eiichi TAKATA , Takeshi NAKAO , Michio KADOTA
发明人： Kenji NISHIYAMA , Eiichi TAKATA , Takeshi NAKAO , Michio KADOTA
IPC分类号： H01L41/24 , B05D5/12
CPC分类号： H03H3/08 , H03H9/02984 , H03H9/14538 , H03H9/25
摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.
摘要翻译：表面声波装置包括由机电系数为约15％以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板，至少一个电极设置在压电基板，其是具有金属层的层压膜，该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层，所述金属层与层叠在所述主金属层上的金属层的合金，由另一种金属和第一SiO 2层构成，第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中，并且具有与电极的厚度大致相等的厚度。在上述表面声波装置中，电极的密度为第一SiO 2层的密度的至少约1.5倍。此外，设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层进一步提供层。

13. 发明申请

US20100219911A1 ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20100219911A1
公开(公告)日：2010-09-02
申请号：US12781050
申请日：2010-05-17
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H03H9/15
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.

14. 发明申请

US20110199169A1 TUNABLE FILTER 有权
标题翻译： TUNABLE过滤器
公开(公告)号：US20110199169A1
公开(公告)日：2011-08-18
申请号：US13096026
申请日：2011-04-28
申请人： Michio KADOTA
发明人： Michio KADOTA
IPC分类号： H03H9/25
CPC分类号： H03H9/02834 , H03H9/02653 , H03H9/25 , H03H9/6403 , H03H9/6483
摘要： A tunable filter includes a surface acoustic wave resonator, in which an IDT electrode is defined by an electrode material provided in a recess in an upper surface of a piezoelectric substrate made of LiNbO3 or LiTaO3, and a ZnO film is arranged to cover the upper surface of the piezoelectric substrate, and variable capacitors connected with the surface acoustic wave resonator.
摘要翻译：可调滤波器包括表面声波谐振器，其中IDT电极由设置在由LiNbO 3或LiTaO 3制成的压电基板的上表面的凹部中的电极材料限定，并且ZnO膜被布置成覆盖上表面的压电基板和与表面声波谐振器连接的可变电容器。

15. 发明申请

US20090320574A1 IN-LIQUID-SUBSTANCE DETECTION SENSOR 有权
标题翻译：液体物质检测传感器
公开(公告)号：US20090320574A1
公开(公告)日：2009-12-31
申请号：US12555894
申请日：2009-09-09
申请人： Hajime YAMADA , Naoko AIZAWA , Yoshihiro KOSHIDO , Koji FUJIMOTO , Toru YABE , Michio KADOTA
发明人： Hajime YAMADA , Naoko AIZAWA , Yoshihiro KOSHIDO , Koji FUJIMOTO , Toru YABE , Michio KADOTA
IPC分类号： G01N29/02
CPC分类号： G01N29/022 , G01N29/222 , G01N2291/022 , G01N2291/0423
摘要： An in-liquid-substance detection sensor that achieves size reduction and detection accuracy improvement includes a piezoelectric substrate, at least two SAW devices provided on one major surface of the piezoelectric substrate and each having at least one IDT electrode defining a sensing portion, outer electrodes provided on the other major surface of the piezoelectric substrate and electrically connected to the SAW devices through vias extending through the piezoelectric substrate, a channel-defining member provided on the one major surface of the piezoelectric substrate so as to surround the SAW devices and a region connecting the SAW devices to each other, thereby defining sidewalls of a channel, and a protective member bonded to the one major surface of the piezoelectric substrate with the channel-defining member interposed therebetween, thereby sealing the channel, the protective member having at least two through holes communicating with the channel.
摘要翻译：实现尺寸减小和检测精度提高的液体内物质检测传感器包括压电基板，设置在压电基板的一个主表面上的至少两个SAW器件，每个具有限定感测部分的至少一个IDT电极，外部电极设置在压电基板的另一个主表面上，并且通过延伸穿过压电基板的通孔电连接到SAW器件，设置在压电基板的一个主表面上以便包围SAW器件的通道限定元件和区域将所述SAW器件彼此连接，由此限定通道的侧壁，以及保护构件，其与所述压电基板的所述一个主表面接合，并且所述通道限定构件插入其间，从而密封所述通道，所述保护构件具有至少两个通道与通道相通。

16. 发明申请

US20090096320A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20090096320A1
公开(公告)日：2009-04-16
申请号：US12341259
申请日：2008-12-22
申请人： Mari YAOI , Tetsuya KIMURA , Michio KADOTA
发明人： Mari YAOI , Tetsuya KIMURA , Michio KADOTA
IPC分类号： H01L41/047
CPC分类号： H03H3/08 , H03H9/02559
摘要： A surface acoustic wave device includes a LiNbO3 substrate having a plurality of grooves formed in the upper surface thereof, an IDT electrode formed by filling the grooves with a metal, and a SiO2 layer arranged to cover an upper surface of the LiNbO3 substrate and the IDT electrode and having a substantially flat surface. The surface acoustic wave device uses a response of a Rayleigh wave. The LiNbO3 substrate has Euler angles in the range of (0°±5°, 180° to 247°, 0°±5°).
摘要翻译：表面声波装置包括：LiNbO 3基板，其上表面具有多个槽，通过用金属填充槽形成的IDT电极和覆盖LiNbO 3基板的上表面的IDT和IDT 电极并具有基本平坦的表面。表面声波装置使用瑞利波的响应。 LiNbO3基板在（0°±5°，180°至247°，0°±5°）的范围内具有欧拉角。

17. 发明申请

US20070284965A1 BOUNDARY ACOUSTIC WAVE DEVICE AND PROCESS FOR PRODUCING SAME 有权
公开(公告)号：US20070284965A1
公开(公告)日：2007-12-13
申请号：US11835184
申请日：2007-08-07
申请人： Michio KADOTA , Hajime KANDO
发明人： Michio KADOTA , Hajime KANDO
IPC分类号： H01L41/083
CPC分类号： H03H9/0222 , H03H3/04 , Y10T29/42 , Y10T29/49005 , Y10T29/4908
摘要： In a method for producing a boundary acoustic wave device that includes a first medium, a second medium, and a third medium laminated in that order, and electrodes disposed at the interface between the first medium and the second medium, the method includes the steps of preparing a laminate including the first medium, the second medium, and the electrodes disposed at the interface between the first medium and the second medium, adjusting the thickness of the second medium after the step of preparing the laminate to regulate a frequency or the acoustic velocity of a surface acoustic wave, a pseudo-boundary acoustic wave, or a boundary acoustic wave, after the adjusting step, forming the third medium different from the second medium in terms of the acoustic velocity with which the boundary acoustic wave propagates therethrough and/or in terms of material.

18. 发明申请

US20120176001A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20120176001A1
公开(公告)日：2012-07-12
申请号：US13424462
申请日：2012-03-20
申请人： Michio KADOTA
发明人： Michio KADOTA
IPC分类号： H01L41/04
CPC分类号： H03H9/02574 , H03H9/02559
摘要： A surface acoustic wave device includes a piezoelectric substrate including an R-plane, a-plane, or m-plane sapphire substrate and a LiNbO3 film of (90°, 90°, −15° to 15°) or (0°, 90°, −15° to 15°) in terms of Euler angles (φ, θ, Ψ) disposed on the sapphire substrate, and electrodes disposed on the piezoelectric substrate and made of metal.
摘要翻译：表面声波装置包括：包括R平面，a面或m面蓝宝石衬底和（90°，90°，-15°至15°）或（0°，90°）的LiNbO 3膜的压电衬底设置在蓝宝石衬底上的欧拉角（＆Phgr;＆amp;Θ;Ψ），以及设置在压电衬底上并由金属制成的电极。

19. 发明申请

US20120074809A1 SURFACE ACOUSTIC WAVE SENSOR 有权
标题翻译：表面声波传感器
公开(公告)号：US20120074809A1
公开(公告)日：2012-03-29
申请号：US13315309
申请日：2011-12-09
申请人： Kenji NISHIYAMA , Yusuke SUZUKI , Shigeo ITO , Michio KADOTA
发明人： Kenji NISHIYAMA , Yusuke SUZUKI , Shigeo ITO , Michio KADOTA
IPC分类号： H01L41/047
CPC分类号： G01N29/022 , G01N29/036 , G01N29/348 , G01N2291/0256 , G01N2291/0422 , G01N2291/0423
摘要： A surface acoustic wave sensor that achieves increased detection sensitivity includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, and a protection layer arranged on the piezoelectric substrate so as to cover the IDT electrode. The surface acoustic wave sensor is arranged so as to be excited by the IDT electrode in a high-order mode of an SH wave in which displacement at a surface of the protection layer and displacement near a boundary between the piezoelectric substrate and the IDT electrode have opposite directions, and the maximum displacement occurs at the surface of the protection layer.
摘要翻译：实现增加的检测灵敏度的表面声波传感器包括压电基板，设置在压电基板上的IDT电极以及设置在压电基板上以覆盖IDT电极的保护层。表面声波传感器被布置成在SH波的高阶模式中被IDT电极激发，其中保护层的表面位移和压电基板与IDT电极之间的边界附近的位移具有在保护层的表面发生最大位移。

20. 发明申请

US20080179989A1 LAMB WAVE DEVICE 有权
标题翻译：拉姆波设备
公开(公告)号：US20080179989A1
公开(公告)日：2008-07-31
申请号：US12099839
申请日：2008-04-09
申请人： Takashi OGAMI , Kansho YAMAMOTO , Michio KADOTA
发明人： Takashi OGAMI , Kansho YAMAMOTO , Michio KADOTA
IPC分类号： H03H9/25
CPC分类号： H03H9/02559 , H03H3/10 , H03H9/02228
摘要： A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface, and an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film. The piezoelectric thin film is made of LiTaO3 or LiNbO3, and the c-axis of the piezoelectric thin film is set in approximately the same direction as that of a line substantially perpendicular to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.
摘要翻译：兰姆波装置包括基底基板和压电薄膜，其设置在基底基板上并具有浮置在基底基板上方的浮动部分，浮动部分具有面向基底基板的第一表面和与基底基板相对的第二表面第一表面和设置在压电薄膜的第一表面和第二表面中的至少一个表面上的IDT电极。压电薄膜由LiTaO 3或LiNbO 3 3制成，并且压电薄膜的c轴被设定为与实质上相当的线的大致相同的方向垂直于压电薄膜的第一表面和第二表面，并且压电薄膜的晶体结构是具有用作旋转轴的c轴的旋转双晶体。

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