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11. 发明授权

US08551862B2 Method of manufacturing laminated wafer by high temperature laminating method 有权
标题翻译：通过高温层压法制造层压晶片的方法
公开(公告)号：US08551862B2
公开(公告)日：2013-10-08
申请号：US12685194
申请日：2010-01-11
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L21/30
CPC分类号： H01L21/84 , H01L21/76254 , H01L21/76256
摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.
摘要翻译：为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合，发生。一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

12. 发明授权

US08138064B2 Method for producing silicon film-transferred insulator wafer 有权
标题翻译：生产硅膜转移绝缘体晶圆的方法
公开(公告)号：US08138064B2
公开(公告)日：2012-03-20
申请号：US12922569
申请日：2009-10-29
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L21/304
CPC分类号： H01L21/76254 , H01L21/76256
摘要： A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer into which a hydrogen ion has been implanted to form a hydrogen ion-implanted layer; a bonding step that bonds the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; a first heating step that heats the bonded wafers; a grinding and/or etching step of grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers; a second heating step that heats the bonded wafers; and a detachment step to detach the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.
摘要翻译：公开了一种用于制造硅膜转移绝缘体晶片的方法。该方法包括对绝缘体晶片的表面和注入氢离子形成氢离子的单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理的表面活化步骤植皮层键合步骤，将氢离子注入表面结合到绝缘体晶片的表面以获得接合的晶片; 加热接合晶片的第一加热步骤; 研磨和/或蚀刻步骤，研磨和/或蚀刻接合晶片的单晶硅晶片侧的表面; 第二加热步骤，加热粘合的晶片; 以及通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击来分离氢离子注入层的分离步骤。

13. 发明申请

US20110014775A1 METHOD FOR PRODUCING SILICON FILM TRANSFERRED INSULATOR WAFTER 有权
标题翻译：生产硅膜转移绝缘子波导的方法
公开(公告)号：US20110014775A1
公开(公告)日：2011-01-20
申请号：US12922569
申请日：2009-10-29
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L21/304
CPC分类号： H01L21/76254 , H01L21/76256
摘要： [PROBLEM] Provided is a method for producing an SOI wafer which the method can prevent occurrence of thermal strain, detachment, crack and the like attributed to a difference in thermal expansion coefficients between the insulating substrate and the SOI layer and also improve the uniformity of film thickness of the SOI layer.[MEANS FOR SOLVING THE PROBLEM] Provided is a method for producing an SOI wafer comprising steps of: performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer having a hydrogen ion-implanted layer; bonding the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; heating the bonded wafers at a first temperature; grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers thus heated so as to thin the single crystal silicon wafer of the bonded wafers; heating the bonded wafers thus ground and/or etched at a second temperature which is higher the first temperature; and performing detachment at the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.
摘要翻译： [问题]提供一种用于制造SOI晶片的方法，该方法可以防止由于绝缘基板和SOI层之间的热膨胀系数的差异而引起的热应变，剥离，裂纹等的发生，并且还提高了 SOI层的膜厚度。解决问题的手段提供一种SOI晶片的制造方法，包括以下步骤：对绝缘体晶片的表面和具有单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理，所述单晶硅晶片具有氢离子注入层; 将氢离子注入表面接合到绝缘体晶片的表面以获得接合晶片; 在第一温度下加热接合的晶片; 研磨和/或蚀刻如此加热的接合晶片的单晶硅晶片侧的表面，以使结合晶片的单晶硅晶片变薄; 加热接合的晶片，从而在第一温度较高的第二温度下进行研磨和/或蚀刻; 并且通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击，在氢离子注入层处进行脱离。

14. 发明授权

US08030176B2 Method for preparing substrate having monocrystalline film 有权
标题翻译：制备具有单晶膜的衬底的方法
公开(公告)号：US08030176B2
公开(公告)日：2011-10-04
申请号：US12380090
申请日：2009-02-24
申请人： Yoshihiro Kubota , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Yoshihiro Nojima
发明人： Yoshihiro Kubota , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Yoshihiro Nojima
IPC分类号： H01L21/46
CPC分类号： C30B31/20 , C30B19/12 , C30B23/025 , C30B25/183 , C30B29/04 , C30B29/06 , C30B29/16 , C30B29/36 , C30B29/40 , C30B33/02 , C30B33/06 , H01L21/76254
摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.
摘要翻译：提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

15. 发明申请

US20090221131A1 Method for preparing substrate having monocrystalline film 有权
标题翻译：制备具有单晶膜的衬底的方法
公开(公告)号：US20090221131A1
公开(公告)日：2009-09-03
申请号：US12380090
申请日：2009-02-24
申请人： Yoshihiro Kubota , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Yoshihiro Nojima
发明人： Yoshihiro Kubota , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Yoshihiro Nojima
IPC分类号： H01L21/36
CPC分类号： C30B31/20 , C30B19/12 , C30B23/025 , C30B25/183 , C30B29/04 , C30B29/06 , C30B29/16 , C30B29/36 , C30B29/40 , C30B33/02 , C30B33/06 , H01L21/76254
摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.
摘要翻译：提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

16. 发明授权

US08088670B2 Method for manufacturing bonded substrate with sandblast treatment 有权
标题翻译：喷砂处理方法
公开(公告)号：US08088670B2
公开(公告)日：2012-01-03
申请号：US12081297
申请日：2008-04-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/304 , H01L21/30 , H01L27/12 , H01L21/18
CPC分类号： H01L21/76254 , H01L21/3046 , H01L21/6835 , H01L27/1214 , H01L27/1266 , H01L2221/68359
摘要： When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.
摘要翻译：当制造使用绝缘体基板作为处理晶片的键合衬底时，提供了一种用于制造键合衬底的方法，其可以在承载和安装之后通过粗糙化粘合衬底的背面（对应于绝缘体基板），另外，在使用透明绝缘体基板作为处理晶片的键合衬底的情况下，可以容易地识别其表面像硅半导体晶片的工艺。提供了一种用于制造键合衬底的方法，其中使用绝缘体衬底作为把手晶片，并且施主晶片结合到绝缘体衬底的前表面，该方法至少包括相对于绝缘体基板的背面。

17. 发明申请

US20090007960A1 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20090007960A1
公开(公告)日：2009-01-08
申请号：US12073437
申请日：2008-03-05
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/00 , B32B37/12 , H01L21/02
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a single crystal silicon solar cell includes the steps of implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type in the single crystal silicon layer; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.
摘要翻译：制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中的步骤; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的单晶硅层表面; 在单晶硅层中形成第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个上的多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

18. 发明申请

US20080261381A1 Method for manufacturing bonded substrate 有权
标题翻译：粘合基材的制造方法
公开(公告)号：US20080261381A1
公开(公告)日：2008-10-23
申请号：US12081297
申请日：2008-04-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/86
CPC分类号： H01L21/76254 , H01L21/3046 , H01L21/6835 , H01L27/1214 , H01L27/1266 , H01L2221/68359
摘要： When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer.There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.
摘要翻译：当制造使用绝缘体基板作为处理晶片的键合衬底时，提供了一种用于制造键合衬底的方法，其可以在承载和安装之后通过粗糙化粘合衬底的背面（对应于绝缘体基板），另外，在使用透明绝缘体基板作为处理晶片的键合衬底的情况下，可以容易地识别其表面像硅半导体晶片的工艺。提供了一种用于制造键合衬底的方法，其中使用绝缘体衬底作为把手晶片，并且施主晶片结合到绝缘体衬底的前表面，该方法至少包括相对于绝缘体基板的背面。

19. 发明授权

US08106290B2 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08106290B2
公开(公告)日：2012-01-31
申请号：US12073437
申请日：2008-03-05
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a single crystal silicon solar cell includes implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.
摘要翻译：制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的单晶硅层表面; 在第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个区域上形成多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

20. 发明申请

US20120126362A1 SOS SUBSTRATE HAVING LOW DEFECT DENSITY IN THE VICINITY OF INTERFACE 审中-公开
标题翻译： SOS底层在接口界面处具有较低的缺陷密度
公开(公告)号：US20120126362A1
公开(公告)日：2012-05-24
申请号：US13320663
申请日：2010-05-25
申请人： Shoji Akiyama , Atsuo Ito , Yuji Tobisaka , Makoto Kawai
发明人： Shoji Akiyama , Atsuo Ito , Yuji Tobisaka , Makoto Kawai
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/268
摘要： A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to form a bonded body; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate for embrittling an interface of the ion-implanted layer, while keeping the bonded body at a temperature higher than the temperature at which the surfaces of the semiconductor substrate and the sapphire substrate were bonded.
摘要翻译：通过以下步骤获得在蓝宝石衬底的表面上或上方具有半导体膜的结合SOS衬底：从半导体衬底的表面注入离子以形成离子注入层的步骤; 至少活化离子已被植入的表面; 将半导体衬底的表面和蓝宝石衬底的表面在50℃至350℃的温度下接合; 在200℃至350℃的最高温度下加热粘合的基材以形成粘合体; 以及将来自蓝宝石衬底侧或半导体衬底侧的可见光照射到所述半导体衬底的离子注入层，以使所述离子注入层的界面脆化，同时将所述接合体保持在高于键合半导体衬底和蓝宝石衬底的表面。

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