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    • 14. 发明授权
    • Metal-oxide-semiconductor field-effect transistor and method for manufacturing the same
    • 金属氧化物半导体场效应晶体管及其制造方法
    • US08803250B2
    • 2014-08-12
    • US13807308
    • 2011-11-18
    • Le Wang
    • Le Wang
    • H01L29/02H01L29/66H01L29/78H01L29/10
    • H01L29/78H01L29/1033H01L29/66477H01L29/66651
    • A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The MOSFET includes a substrate, a well region formed in the substrate, a shallow channel layer, a channel, a gate oxide layer, a gate region, a source region, and a drain region. The shallow channel layer is formed on a portion of the well region and includes a first shallow channel region and a second shallow channel region. The channel is arranged between the first shallow channel region and the second shallow channel region and connects the first shallow channel region and the second shallow channel region. Further, the gate oxide layer is formed on a portion of the well region between the first shallow channel region and the second shallow channel region and includes a first gate oxide region and a second gate oxide region arranged on different sides of the channel. The gate region is formed on the channel and the gate oxide layer; the source region is formed in the first shallow channel region and vertically extends into the well region under the first shallow channel region; and the drain region is formed in the second shallow channel region and vertically extends into the well region under the second shallow channel region.
    • 公开了一种金属氧化物半导体场效应晶体管(MOSFET)。 MOSFET包括衬底,形成在衬底中的阱区,浅沟道层,沟道,栅极氧化物层,栅极区,源极区和漏极区。 浅沟道层形成在阱区的一部分上,并且包括第一浅沟道区和第二浅沟道区。 通道布置在第一浅沟道区域和第二浅沟道区域之间,并且连接第一浅沟道区域和第二浅沟道区域。 此外,栅极氧化层形成在第一浅沟道区域和第二浅沟道区域之间的阱区域的一部分上,并且包括布置在沟道的不同侧上的第​​一栅极氧化物区域和第二栅极氧化物区域。 栅极区形成在沟道和栅极氧化物层上; 源极区域形成在第一浅沟道区域中并垂直延伸到第一浅沟道区域下方的阱区域中; 并且所述漏极区域形成在所述第二浅沟道区域中并且垂直延伸到所述第二浅沟道区域下方的阱区域中。