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11. 发明申请

US20050275975A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20050275975A1
公开(公告)日：2005-12-15
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构包括具有Co ++ 78.6Cr 5.2 Pt 16.2的复合硬偏置层另一方面，本发明的另一个目的是提供一种用于制造高分子材料的方法。上部Co 65 N 15 15 Pt 20 O层具有较大的Hc值，并且厚度比Co < 丙烯酸甲酯，丙烯酸甲酯，丙烯酸丁酯，丙烯酸乙酯硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。任选地，Co ++ C 26.6 Cr 2 Pt 16.2层的厚度为零，并且Co 65 在BCC底层上形成> 15 20 层。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

12. 发明授权

US08107201B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US08107201B2
公开(公告)日：2012-01-31
申请号：US12660908
申请日：2010-03-05
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

13. 发明授权

US07918014B2 Method of manufacturing a CPP structure with enhanced GMR ratio 有权
标题翻译：制造具有增强的GMR比的CPP结构的方法
公开(公告)号：US07918014B2
公开(公告)日：2011-04-05
申请号：US11180808
申请日：2005-07-13
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/187 , C23C14/34
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10 layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。此后，与侧壁相邻地形成电介质层。

14. 发明申请

US20080260943A1 Process for composite free layer in CPP GMR or TMR device 有权
标题翻译： CPP GMR或TMR装置中复合自由层的工艺
公开(公告)号：US20080260943A1
公开(公告)日：2008-10-23
申请号：US12214503
申请日：2008-06-19
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.
摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。描述了用于制造该装置的方法。

15. 发明授权

US08484830B2 Method of manufacturing a CPP structure with enhanced GMR ratio 有权
标题翻译：制造具有增强的GMR比的CPP结构的方法
公开(公告)号：US08484830B2
公开(公告)日：2013-07-16
申请号：US13065966
申请日：2011-04-04
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/187 , G11B5/23
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies, from 85 to 100 atomic % to maintain low Hc and λs values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层中的Ni含量为85〜100原子％，保持低Hc 和lambdas值。使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。此后，与侧壁相邻地形成电介质层。

16. 发明授权

US08105703B2 Process for composite free layer in CPP GMR or TMR device 有权
标题翻译： CPP GMR或TMR装置中复合自由层的工艺
公开(公告)号：US08105703B2
公开(公告)日：2012-01-31
申请号：US12214503
申请日：2008-06-19
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.
摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。描述了用于制造该装置的方法。

17. 发明授权

US07390530B2 Structure and process for composite free layer in CPP GMR device 失效
标题翻译： CPP GMR装置中复合自由层的结构与工艺
公开(公告)号：US07390530B2
公开(公告)日：2008-06-24
申请号：US10999826
申请日：2004-11-30
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
摘要翻译： CPP GMR读取头中的常规自由层已经被包含Co富CoFe，适度富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。还描述了用于制造该装置的方法。

18. 发明授权

US07352543B2 Ta based bilayer seed for IrMn CPP spin valve 有权
公开(公告)号：US07352543B2
公开(公告)日：2008-04-01
申请号：US11043624
申请日：2005-01-26
申请人： Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
发明人： Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
IPC分类号： G11B5/33
CPC分类号： G11B5/39
摘要： The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.

19. 发明授权

US07288281B2 CPP spin valve with ultra-thin CoFe(50%) laminations 失效
标题翻译： CPP自旋阀具有超薄CoFe（50％）叠片
公开(公告)号：US07288281B2
公开(公告)日：2007-10-30
申请号：US10933031
申请日：2004-09-02
申请人： Min Li , Kunliang Zhang , Cheng T. Horng , Chyu Jiuh Torng , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Kunliang Zhang , Cheng T. Horng , Chyu Jiuh Torng , Yu-Hsia Chen , Ru-Ying Tong
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper layers. Ultra-thin layers of iron-rich CoFe are then inserted at all the copper-CoFe interfaces.
摘要翻译： FeFe CoFe可用于AP1，以提高CPP GMR。然而，这被发现降低了器件的电迁移性能。通过使用作为多层CoFe（25％）层的层叠体的AP1，通过铜层彼此分离，解决了该问题。然后在所有铜 - 钴Fe界面上插入超薄的富铁CoFe层。

20. 发明申请

US20060164765A1 Ta based bilayer seed for IrMn CPP spin valve 有权
标题翻译：用于IrMn CPP自旋阀的Ta基双层种子
公开(公告)号：US20060164765A1
公开(公告)日：2006-07-27
申请号：US11043624
申请日：2005-01-26
申请人： Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
发明人： Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39
摘要： The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
摘要翻译：通过用钽和钌或铜替代传统的单层种子，在高开关场中的CPP GMR器件中的IrMn钉扎层的有效性得到改善。钽用于抵消下层的结晶影响，而钌或铜提供合适的碱以生长IrMn层。

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