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11. 发明申请

US20060086618A1 Method and apparatus for forming interconnects 审中-公开
标题翻译：用于形成互连的方法和装置
公开(公告)号：US20060086618A1
公开(公告)日：2006-04-27
申请号：US11254789
申请日：2005-10-21
申请人： Akira Fukunaga , Manabu Tsujimura
发明人： Akira Fukunaga , Manabu Tsujimura
IPC分类号： C25D5/02
CPC分类号： H01L21/76873 , C25D7/123 , C25D17/001 , H01L21/288 , H01L21/32115 , H01L21/32125 , H01L21/76849 , H01L21/76877
摘要： An interconnects-forming method can form a film of interconnect material, having a sufficient adhesion, by electroplating uniformly on an entire surface of a substrate and thus can form highly-reliable embedded interconnects even when the design rule is strict, and which can remove an extra interconnect material at a lower pressure. The interconnects-forming method, including: forming a conductive film on a surface of a substrate having interconnect recesses formed in an insulating film, said conductive film being insoluble in an electrolytic plating solution for the formation of a film of an interconnect material; forming a film of the interconnect material by electroplating on a surface of the conductive film serving as a seed film while filling the interconnect recesses with the interconnect material; and removing an extra interconnect material of the film formed on the conductive film, thereby forming interconnects of the interconnect material embedded in the interconnect recesses.
摘要翻译：互连形成方法可以通过均匀地电镀在基板的整个表面上形成具有足够的粘附性的互连材料的膜，并且因此即使设计规则是严格的也可以形成高度可靠的嵌入式互连，并且可以去除额外的互连材料在较低的压力。所述互连形成方法包括：在具有形成在绝缘膜中的互连凹槽的基板的表面上形成导电膜，所述导电膜不溶于用于形成互连材料膜的电解电镀液; 在用所述互连材料填充所述互连凹槽的同时，通过电镀在所述导电膜的表面上形成所述互连材料的膜; 以及除去形成在导电膜上的膜的额外互连材料，从而形成嵌入在互连凹槽中的互连材料的互连。

12. 发明申请

US20050254051A1 Method of polishing thin film formed on substrate 有权
标题翻译：研磨在基材上形成的薄膜的方法
公开(公告)号：US20050254051A1
公开(公告)日：2005-11-17
申请号：US11128364
申请日：2005-05-13
申请人： Shohei Shima , Akira Fukunaga
发明人： Shohei Shima , Akira Fukunaga
IPC分类号： H01L21/304 , B24B49/03 , B24B49/12 , G01B11/06 , G01J4/00 , G01N21/21
CPC分类号： B24B49/03 , B24B37/042 , B24B49/12 , G01B11/0641 , G01N21/211
摘要： A method for polishing a thin film formed on a substrate includes planarizing a thin film formed on a reference substrate by a CMP process such that the thin film remains on the reference substrate. After the planarizing, the thin film is cleaned, and then values of Δ and Ψ with respect to the cleaned thin film are measured by ellipsometry. A physical property of the thin film is determined based on the Δ and Ψ which have been measured by ellipsometry, and a polishing condition for an other substrate having a thin film to be polished is set based on physical property data which are obtained by the determining of the physical property.
摘要翻译：用于抛光形成在基板上的薄膜的方法包括通过CMP工艺平坦化在参考基板上形成的薄膜，使得薄膜保留在参考基板上。在平坦化之后，清洁薄膜，然后通过椭偏仪测量相对于清洁的薄膜的Delta和Psi值。基于通过椭偏仪测量的Delta和Psi来确定薄膜的物理性质，并且基于通过确定获得的物理特性数据来设置具有待抛光薄膜的另一基板的抛光条件的物理财产。

13. 发明申请

US20050009213A1 Substrate processing method and apparatus 有权
标题翻译：基板加工方法及装置
公开(公告)号：US20050009213A1
公开(公告)日：2005-01-13
申请号：US10874245
申请日：2004-06-24
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Akira Fukunaga
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Akira Fukunaga
IPC分类号： G01B21/08 , C23C18/16 , C23C18/31 , C23F1/08 , H01L21/288 , H01L21/3205 , H01L21/66 , H01L21/768 , H01L21/00
CPC分类号： H01L21/76849 , C23C18/1608 , C23C18/1675 , C23C18/1692 , C23C18/1879 , H01L21/288 , H01L21/76864 , H01L21/76874 , H01L22/12 , H01L22/20 , H01L2223/54466
摘要： There is provided a substrate processing method and apparatus which can measure and monitor the thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in the process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate with a metal and an insulating material exposed on its surface in such a manner that the film thickness of the metal portion with the exposed surface of the metal as a reference plane is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal portion during and/or immediately after processing, and monitoring the processing and adjusting the processing conditions based on the results of measurement.
摘要翻译：提供了可以根据需要测量和监测在基板上形成的膜的厚度和/或性能的基板处理方法和装置，并且可以快速校正工艺条件的偏差，因此可以稳定地提供恒定的产品质量。一种基板处理方法，用于以金属的暴露表面作为基准面的金属部分的膜厚选择性地或优先地改变的方式处理具有金属和绝缘材料的基板，该金属和绝缘材料暴露在其表面上，包括测量在处理期间和/或紧随其后的金属部分的膜厚度和/或膜特性的变化，并且基于测量结果监视处理和调整处理条件。

14. 发明授权

US06558478B1 Method of and apparatus for cleaning substrate 有权
标题翻译：清洗基材的方法和设备
公开(公告)号：US06558478B1
公开(公告)日：2003-05-06
申请号：US09679305
申请日：2000-10-06
申请人： Ichiro Katakabe , Shinya Morisawa , Haruko Ohno , Sachiko Kihara , Akira Fukunaga
发明人： Ichiro Katakabe , Shinya Morisawa , Haruko Ohno , Sachiko Kihara , Akira Fukunaga
IPC分类号： B08B302
CPC分类号： H01L21/67051 , Y10S134/902
摘要： An acid solution is continuously supplied to a central portion of a surface of a substrate while the substrate is rotating, and an oxidizing agent solution is continuously or intermittently supplied to a periphery of the substrate. In addition, an oxidizing agent solution and an acid solution are simultaneously or alternately supplied to a reverse side of the substrate.
摘要翻译：在基板旋转的同时，将酸性溶液连续地供给到基板的表面的中央部分，并且将氧化剂溶液连续或间歇地供给到基板的周边。此外，将氧化剂溶液和酸溶液同时或交替地供给到基板的相反侧。

15. 发明授权

US5894131A Exhaust apparatus in ion implantation system 失效
标题翻译：离子注入系统中的排气装置
公开(公告)号：US5894131A
公开(公告)日：1999-04-13
申请号：US848356
申请日：1997-02-07
申请人： Akira Fukunaga , Tetsuo Komai
发明人： Akira Fukunaga , Tetsuo Komai
IPC分类号： H01J37/08 , C23C14/48 , C23C14/56 , H01J37/18 , H01J37/317
CPC分类号： C23C14/48 , C23C14/564 , H01J37/18 , H01J2237/31701
摘要： An exhaust apparatus in an ion implantation system for implanting impurities into a target substrate is used for evacuating an ion source chamber. The exhaust apparatus comprises at least one vacuum pump which does not use working oil for evacuating the ion source chamber, an atmospheric exhaust pipe connected to the vacuum pump for exhausting gas from the vacuum pump; and a device for introducing inert gas into at least one of the vacuum pump and the atmospheric exhaust pipe. The exhaust apparatus includes at least two vacuum pumps comprising a turbomolecular pump and a dry pump.
摘要翻译：离子注入系统中用于将杂质注入目标衬底中的排气装置用于抽真空离子源室。排气装置包括至少一个不使用工作油排出离子源室的真空泵，连接到真空泵的大气排气管，用于从真空泵排出气体; 以及用于将惰性气体引入到真空泵和大气排气管中的至少一个中的装置。排气装置包括至少两个包括涡轮分子泵和干式泵的真空泵。

16. 发明授权

US08211242B2 Substrate processing method, substrate processing apparatus, and control program 有权
标题翻译：基板处理方法，基板处理装置和控制程序
公开(公告)号：US08211242B2
公开(公告)日：2012-07-03
申请号：US11883831
申请日：2006-01-30
申请人： Yuki Inoue , Akira Fukunaga , Takahiro Ogawa
发明人： Yuki Inoue , Akira Fukunaga , Takahiro Ogawa
IPC分类号： B08B3/02
CPC分类号： H01L21/68728 , B08B1/04 , H01L21/67034 , H01L21/67046 , H01L21/67051 , Y10S134/902
摘要： A substrate processing method includes covering, in advance, the surface of a substrate with water, holding the substrate generally horizontally with the surface facing upward and rotating it in a horizontal plane, and blowing to the substrate top surface drying gas flow that is thin in area in comparison with the substrate surface, in which the water is removed from the substrate top surface by the rotation in the horizontal plane while blowing the drying gas flow, a substrate processing apparatus for implementing the above method, and a control program for use with the above method and apparatus.
摘要翻译：基板处理方法包括预先用水覆盖基板的表面，将基板大致水平地保持在表面朝上并在水平面内旋转，并向基板顶表面吹送干燥气体流与基材表面相比，其中通过在吹干干燥气体流中的水平面中的旋转从基板顶表面除去水，用于实现上述方法的基板处理装置，以及用于上述方法和装置。

17. 发明申请

US20070141251A1 Method of forming thin metal films on substrates 审中-公开
标题翻译：在基材上形成薄金属薄膜的方法
公开(公告)号：US20070141251A1
公开(公告)日：2007-06-21
申请号：US11707122
申请日：2007-02-16
申请人： Akira Fukunaga , Hiroshi Nagasawa , Takao Kato
发明人： Akira Fukunaga , Hiroshi Nagasawa , Takao Kato
IPC分类号： B05D3/02
CPC分类号： B22F1/0022 , B22F1/0014 , B22F1/0018 , B22F1/0059 , B22F1/0062 , B22F2998/00 , B82Y30/00 , C23C4/123 , C23C24/08 , C23C26/00 , H01L21/288 , H01L21/6715 , H01L21/76877 , H01L21/76882 , H01L23/53228 , H01L23/53238 , H01L23/5328 , H01L2924/0002 , H01L2924/00
摘要： A solution containing a metal component of composite ultrafine metal particles each having a core substantially made of metal component and a covering layer made of an organic compound chemically bonded to the core having an average diameter ranging from 1 to 10 nm, uniformly dispersed in a solvent, forms a thin metal film on the surface of a transfer sheet, after which the transfer sheet is thermally decomposed to transfer the thin metal film to a substrate.
摘要翻译：包含复合超细金属颗粒的金属组分的溶液，每个金属组分均具有基本上由金属组分制成的芯和由化学键合到具有1-10nm平均直径的芯的有机化合物制成的覆盖层，均匀分散在溶剂中在转印片的表面上形成薄金属膜，然后将转印片热分解，将薄金属膜转印到基板上。

18. 发明申请

US20070099426A1 Polishing method, polishing apparatus, and electrolytic polishing apparatus 审中-公开
标题翻译：抛光方法，抛光装置和电解抛光装置
公开(公告)号：US20070099426A1
公开(公告)日：2007-05-03
申请号：US11316845
申请日：2005-12-27
申请人： Manabu Tsujimura , Akira Fukunaga , Yutaka Wada , Itsuki Kobata
发明人： Manabu Tsujimura , Akira Fukunaga , Yutaka Wada , Itsuki Kobata
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C25F7/00 , H01L21/3212 , H01L21/32125
摘要： A polishing method polishes a substrate so as to remove an interconnect metal film and a barrier film formed on portions other than interconnect recesses. The method includes performing a first polishing process of polishing a surface of the substrate After performing the first polishing process, the surface of the substrate is cleaned. After cleaning, a second polishing process is performed for further polishing the surface of the substrate. At least one of performing the first polishing process and performing the second polishing process includes performing electrolytic polishing.
摘要翻译：抛光方法抛光衬底以去除互连金属膜和形成在互连凹槽之外的部分上的阻挡膜。该方法包括进行抛光基板的表面的第一抛光处理。在进行第一抛光处理之后，清洁基板的表面。在清洁之后，执行第二抛光工艺以进一步抛光衬底的表面。执行第一抛光处理并执行第二抛光处理中的至少一个包括进行电解抛光。

19. 发明申请

US20050245080A1 Method and apparatus for processing substrate 有权
标题翻译：处理基板的方法和装置
公开(公告)号：US20050245080A1
公开(公告)日：2005-11-03
申请号：US11039967
申请日：2005-01-24
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka , Tsuyoshi Sahoda
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka , Tsuyoshi Sahoda
IPC分类号： C23C18/16 , C23C18/18 , H01L21/00 , H01L21/02 , H01L21/288 , H01L21/306 , H01L21/321 , H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/02068 , C23C18/1632 , C23C18/1689 , C23C18/1844 , H01L21/02074 , H01L21/288 , H01L21/67028 , H01L21/76849 , H01L21/76874 , H01L21/76883
摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.
摘要翻译：基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

20. 发明申请

US20050208774A1 Wet processing method and processing apparatus of substrate 审中-公开
标题翻译：湿法加工方法及基材加工装置
公开(公告)号：US20050208774A1
公开(公告)日：2005-09-22
申请号：US11029675
申请日：2005-01-06
申请人： Akira Fukunaga , Akira Owatari , Masahiko Sekimoto , Xinming Wang
发明人： Akira Fukunaga , Akira Owatari , Masahiko Sekimoto , Xinming Wang
IPC分类号： C23C18/16 , C23C18/18 , C23F1/00 , C23G1/08 , C23G1/10 , C23G3/02 , C25D7/12 , H01L21/00 , H01L21/02 , H01L21/288 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/768
CPC分类号： H01L21/67086 , C23C18/1619 , C23C18/1893 , C23G1/088 , C23G1/103 , C23G3/023 , C23G3/026 , C23G3/027 , C25D17/001 , H01L21/02068 , H01L21/02074 , H01L21/02087 , H01L21/0209 , H01L21/288 , H01L21/6708 , H01L21/67173 , H01L21/6719 , H01L21/6723 , H01L21/76849 , H01L21/76864 , H01L21/76874
摘要： A substrate wet-processing method can carry out uniform chemical processing of the surface of a substrate while easily preventing a gas from remaining on the surface of the substrate and preventing difference in the concentration and the temperature of a chemical solution between the end portion and the central portion of the substrate. The substrate wet-processing method includes: providing an acidic solution whose concentration is previously adjusted within a predetermined concentration range; continuously spraying the acidic solution having the adjusted concentration toward a substrate at a predetermined pressure to bring it into contact with a surface of the substrate; and then forming a film of an insulating material, a metal or an alloy on the exposed surface of a metal formed in the surface of the substrate.
摘要翻译：基板湿法处理方法可以对基板表面进行均匀的化学处理，同时容易地防止气体残留在基板的表面上，并且防止端部和端部之间的化学溶液的浓度和温度的差异基板的中心部分。底物湿法处理方法包括：提供浓度预先调节在预定浓度范围内的酸性溶液; 将具有调整浓度的酸性溶液以预定压力连续喷射到基板，使其与基板的表面接触; 然后在形成在基板的表面的金属的暴露表面上形成绝缘材料，金属或合金的膜。

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