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11. 发明授权

US06340739B1 Polyamide and process for producing the same 有权
标题翻译：聚酰胺及其制备方法
公开(公告)号：US06340739B1
公开(公告)日：2002-01-22
申请号：US09673740
申请日：2000-10-20
申请人： Kiyotaka Shigehara , Yoshihiro Katayama , Seiji Nishikawa , Yasushi Hotta
发明人： Kiyotaka Shigehara , Yoshihiro Katayama , Seiji Nishikawa , Yasushi Hotta
IPC分类号： C08G6926
CPC分类号： C08G69/26 , C07D309/38 , C08G69/02 , C08G69/40
摘要： A polyamide having repeating units represented by formula (1), wherein R1 represents a divalent hydrocarbon residue optionally having in the structure a heteroatom having no active hydrogen. The polyamide has a high refractive index, is biodegradable, and is useful as a material for fibers and plastics.
摘要翻译：具有由式（1）表示的重复单元的聚酰胺，其中R 1表示任选具有结构中没有活性氢的杂原子的二价烃残基。聚酰胺具有高折射率，是可生物降解的，并且可用作纤维和塑料的材料。

12. 发明授权

US5733770A 5-aminolevulinic acid producing microorganism and process for producing 5-aminolevulinic acid 失效
标题翻译： 5-氨基乙酰丙酸生产微生物和生产5-氨基乙酰丙酸的方法
公开(公告)号：US5733770A
公开(公告)日：1998-03-31
申请号：US575818
申请日：1995-12-20
申请人： Keitaro Watanabe , Seiji Nishikawa , Tohru Tanaka , Yasushi Hotta
发明人： Keitaro Watanabe , Seiji Nishikawa , Tohru Tanaka , Yasushi Hotta
IPC分类号： C12P13/00 , C12N1/20
CPC分类号： C12P13/005 , C12R1/01 , C12R1/19 , C12R1/38 , C12R1/85 , Y10S435/822
摘要： A microorganism that produces 5-aminolevulinic acid, wherein the microorganism has a 5-aminolevulinic acid dehydratase variant having a reduced inhibitor constant for a 5-aminolevulinic acid dehydratate inhibitor. A microorganism that produces 5-aminolevulinic acid, wherein the microorganism is a photosynthetic bacterium that produces 5-aminolevulinic acid without light irradiation. A progess for producing 5-aminolevulinic acid comprising the step of culturing a microorganism that produces 5-aminolevulinic acid in a culture medium under at least one condition selected from the group consisting of (a) less than 1 ppm of dissolved oxygen concentration in the culture medium, (b) from -180 to 50 mV of oxidation-reduction potential in the culture medium, and (c) from 5.times.10.sup.-9 to (KrM-2.times.10.sup.-8) (mol of O.sub.2 /ml.multidot.min.multidot.cell) of cellular respiration rate, wherein KrM represents the maximum cellular respiration rate when oxygen is supplied in an excess quantity.
摘要翻译：一种产生5-氨基乙酰丙酸的微生物，其中微生物具有5-氨基乙酰丙酸脱水抑制剂的抑制剂常数降低的5-氨基乙酰丙酸脱水酶变体。产生5-氨基乙酰丙酸的微生物，其中所述微生物是不照射光而产生5-氨基乙酰丙酸的光合细菌。一种用于生产5-氨基乙酰丙酸的方法，包括在选自以下的至少一种条件下培养在培养基中产生5-氨基乙酰丙酸的微生物的步骤：（a）在培养物中小于1ppm的溶解氧浓度培养基中，（b）在培养基中的-180至50mV的氧化还原电位，和（c）5×10 -9至（KrM-2×10 -8）（摩尔的O 2 / ml×Min×细胞）的细胞呼吸速率，其中当以超量供给氧气时，KrM表示最大的细胞呼吸速率。

13. 发明授权

US08173839B2 5-aminolevulinic acid salt, process for producing the same and use thereof 有权
标题翻译： 5-氨基乙酰丙酸盐，其制备方法及其用途
公开(公告)号：US08173839B2
公开(公告)日：2012-05-08
申请号：US10594923
申请日：2005-03-28
申请人： Naohisa Tachiya , Seiji Nishikawa , Mai Higo , Tohru Tanaka , Masahiro Ishizuka , Hideki Okada
发明人： Naohisa Tachiya , Seiji Nishikawa , Mai Higo , Tohru Tanaka , Masahiro Ishizuka , Hideki Okada
IPC分类号： C07C227/40 , C07C227/42 , C07C227/16 , C07C229/22
CPC分类号： A01N37/44 , A61K41/0061 , A61K49/0021 , C07C227/00 , C07C229/22 , C07C309/30 , C07F9/11
摘要： A 5-aminolevulinic acid salt which is useful in fields of microorganisms, fermentation, animals, medicaments, plants and the like; a process for producing the same; a medical composition comprising the same; and a plant activator composition comprising the same.
摘要翻译：可用于微生物，发酵，动物，药物，植物等领域的5-氨基乙酰丙酸盐; 其制造方法; 包含其的医药组合物; 以及包含该组合物的植物活化剂组合物。

14. 发明申请

US20100310791A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：等离子体处理方法和等离子体处理系统
公开(公告)号：US20100310791A1
公开(公告)日：2010-12-09
申请号：US12812653
申请日：2009-01-20
申请人： Tadashi Shimazu , Seiji Nishikawa , Hidetaka Kafuku
发明人： Tadashi Shimazu , Seiji Nishikawa , Hidetaka Kafuku
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/505 , H01J37/321 , H01J37/32706 , H01L21/02274 , H01L21/3185
摘要： In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.
摘要翻译：为了提供等离子体处理方法和能够嵌入SiN膜的等离子体处理系统，可以通过施加偏压功率来进行，在等离子体处理方法中，用于在作为目标的基板21上沉积氮化硅膜的等离子体处理方法等离子体处理，通过使用含有硅和氢的原料气体和含氮气体的等离子体，将离子注入基板21的偏压功率设定为等于或高于阈值以增加Si-H键合量，从而降低压缩应力。

15. 发明授权

US06342377B1 Microorganisms producing 5-aminolevulinic acid and processes for producing 5-aminolevulinic acid by using the same 有权
标题翻译：生产5-氨基乙酰丙酸的微生物及使用该5-氨基乙酰丙酸的方法
公开(公告)号：US06342377B1
公开(公告)日：2002-01-29
申请号：US09424671
申请日：2000-02-28
申请人： Seiji Nishikawa , Tohru Tanaka , Tomomi Kaminaga , Kikuo Watanabe , Nobuya Miyachi , Keitaro Watanabe , Yasushi Hotta
发明人： Seiji Nishikawa , Tohru Tanaka , Tomomi Kaminaga , Kikuo Watanabe , Nobuya Miyachi , Keitaro Watanabe , Yasushi Hotta
IPC分类号： C12P1300
CPC分类号： C12N9/1029 , C12P13/005
摘要： Microorganisms producing 5-aminolevulinic acid which show a 5-aminolevulinic acid synthetase activity of 2 to 7 (nmol/min/mg protein) under aerobic culture conditions with a dissolved oxygen concentration of 0.70 to 6.60 ppm; a process for producing 5-aminolevulinic acid characterized by culturing one or more microorganisms and harvesting 5-aminolevulinic acid from the obtained culture; a process for producing 5-aminolevulinic acid characterized by culturing 5-aminolevulinic acid-producing microorganisms in a medium containing 5 to 500 &mgr;M of iron components; and a method for culturing 5-aminolevulinic acid-producing microorganisms.
摘要翻译：产生5-氨基乙酰丙酸的微生物，其在需氧培养条件下，溶解氧浓度为0.70至6.60ppm，显示5-7个氨基乙酰丙酸合成酶活性为2至7（nmol / min / mg蛋白）; 一种生产5-氨基乙酰丙酸的方法，其特征在于培养一种或多种微生物并从所得培养物中收获5-氨基乙酰丙酸; 一种生产5-氨基乙酰丙酸的方法，其特征在于在含有5-500微米铁成分的培养基中培养5-氨基乙酰丙酸生产微生物; 以及培养5-氨基乙酰丙酸生产微生物的方法。

16. 发明授权

US06340579B1 Gene encoding an alpha-hydroxy-gamma-carboxymuconic acid-epsilon-semialdehyde dehydrogenase 有权
标题翻译：编码α-羟基-γ-羧甲基纤维素-ε-半醛脱氢酶的基因
公开(公告)号：US06340579B1
公开(公告)日：2002-01-22
申请号：US09720817
申请日：2001-01-12
申请人： Eiji Masai , Masao Fukuda , Yoshihiro Katayama , Seiji Nishikawa , Yasushi Hotta
发明人： Eiji Masai , Masao Fukuda , Yoshihiro Katayama , Seiji Nishikawa , Yasushi Hotta
IPC分类号： C12P1706
CPC分类号： C12N9/0008 , C12P7/48 , C12P7/50
摘要： &agr;-Hydroxy-&ggr;-carboxymuconic acid-&egr;-semialdehyde dehydrogenase, a gene encoding the enzyme, a recombinant vector containing the gene and a transformant carrying the gene, and processes for producing the enzyme and 2-pyrone-dicarboxylic acid by using the transformant. Use of the transformant can produce &agr;-hydroxy-&ggr;-carboxymuconic acid-&egr;-semialdehyde dehydrogenase in a large amount, thereby permitting industrial production of 2-pyrone-4,6-dicarboxylic acid.
摘要翻译： α-羟基-γ-羧基粘蛋白酸-ε-半醛脱氢酶，编码该酶的基因，含该基因的重组载体和携带该基因的转化体，以及使用该转化体产生该酶和2-吡喃酮二羧酸的方法使用转化体可以大量生成α-羟基-γ-羧基粘蛋白酸-ε-半醛脱氢酶，从而允许工业生产2-吡喃酮-4,6-二羧酸。

17. 发明授权

US06303745B1 Polyester and process for producing the same 有权
标题翻译：聚酯及其制造方法
公开(公告)号：US06303745B1
公开(公告)日：2001-10-16
申请号：US09673782
申请日：2000-10-20
申请人： Kiyotaka Shigehara , Yoshihiro Katayama , Seiji Nishikawa , Yasushi Hotta
发明人： Kiyotaka Shigehara , Yoshihiro Katayama , Seiji Nishikawa , Yasushi Hotta
IPC分类号： C08G6306
CPC分类号： C08G63/553 , C08G63/18
摘要： A polyester having repeating units represented by formula (1): wherein R1 represents a divalent hydrocarbon residue which in its structure may contain a heteroatom having no active hydrogen. The polyester has a high refractive index and biodegradability, and is useful as a material for fibers and plastics.
摘要翻译：具有由式（1）表示的重复单元的聚酯：其中R1表示二价烃残基，其在其结构中可含有不含活性氢的杂原子。聚酯具有高折射率和生物降解性，并且可用作纤维和塑料的材料。

18. 发明授权

US08471061B2 5-aminolevulinic acid salt, process for producing the same and use thereof 有权
标题翻译： 5-氨基乙酰丙酸盐，其制备方法及其用途
公开(公告)号：US08471061B2
公开(公告)日：2013-06-25
申请号：US13418465
申请日：2012-03-13
申请人： Naohisa Tachiya , Seiji Nishikawa , Mai Higo , Tohru Tanaka , Masahiro Ishizuka , Hideki Okada
发明人： Naohisa Tachiya , Seiji Nishikawa , Mai Higo , Tohru Tanaka , Masahiro Ishizuka , Hideki Okada
IPC分类号： C07C227/40 , C07C227/42 , C07C227/16 , C07C229/22
CPC分类号： A01N37/44 , A61K41/0061 , A61K49/0021 , C07C227/00 , C07C229/22 , C07C309/30 , C07F9/11
摘要： A 5-aminolevulinic acid salt which is useful in fields of microorganisms, fermentation, animals, medicaments, plants and the like; a process for producing the same; a medical composition comprising the same; and a plant activator composition comprising the same.
摘要翻译：可用于微生物，发酵，动物，药物，植物等领域的5-氨基乙酰丙酸盐; 其制造方法; 包含其的医药组合物; 和包含其的植物活化剂组合物。

19. 发明申请

US20130109154A1 METHOD AND APPARATUS FOR PRODUCING SILICON NITRIDE FILM 有权
标题翻译：用于生产氮化硅膜的方法和装置
公开(公告)号：US20130109154A1
公开(公告)日：2013-05-02
申请号：US13638213
申请日：2011-05-18
申请人： Seiji Nishikawa , Hidetaka Kafuku , Tadashi Shimazu
发明人： Seiji Nishikawa , Hidetaka Kafuku , Tadashi Shimazu
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02521 , C23C16/345 , C23C16/505 , H01J37/32449 , H01J37/32706 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/67017
摘要： Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.
摘要翻译：本发明公开了一种氮化硅膜的制造方法，其中通过施加偏压功率来形成氮化硅膜时抑制了在衬底周边发生气泡; 以及氮化硅膜的制造装置。具体公开了用于制造氮化硅膜的方法和装置，其中通过等离子体处理在衬底上形成用于半导体元件的氮化硅膜。在制造氮化硅膜的方法和装置中，在时间（b1）对衬底施加偏压，并且在施加了时间（b3）之后开始供应氮化硅膜的原料气体SiH4 偏见。

20. 发明申请

US20130071671A1 SILICON NITRIDE FILM FOR SEMICONDUCTOR ELEMENT, AND METHOD AND APPARATUS FOR MANUFACTURING SILICON NITRIDE FILM 审中-公开
标题翻译：半导体元件用氮化硅薄膜及其制造方法及装置氮化硅薄膜
公开(公告)号：US20130071671A1
公开(公告)日：2013-03-21
申请号：US13638200
申请日：2011-05-11
申请人： Seiji Nishikawa , Hidetaka Kafuku
发明人： Seiji Nishikawa , Hidetaka Kafuku
IPC分类号： B32B9/04 , H01L21/02 , C23C16/34
CPC分类号： B32B9/04 , C23C16/345 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： Disclosed is a silicon nitride film for a semiconductor element, wherein changes of film stress of the silicon nitride film are suppressed, said silicon nitride film being formed by applying bias power. Also disclosed are a method and an apparatus for manufacturing the silicon nitride film. The silicon nitride film, which is formed on a substrate (19) by plasma processing, and which is to be used in the semiconductor element, has a structure wherein a biased SiN film (31) formed by applying bias to the substrate (19) is sandwiched between an unbiased SiN film (32a) and an unbiased SiN film (32b), which are formed by not applying bias to the substrate (19).
摘要翻译：公开了一种用于半导体元件的氮化硅膜，其中氮化硅膜的膜应力的变化被抑制，所述氮化硅膜通过施加偏置功率而形成。还公开了一种用于制造氮化硅膜的方法和装置。通过等离子体处理形成在衬底（19）上并用于半导体元件中的氮化硅膜具有这样的结构，其中通过向衬底（19）施加偏压而形成的偏置SiN膜（31）被夹在通过不向衬底（19）施加偏压而形成的无偏压SiN膜（32a）和无偏压SiN膜（32b）之间。

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