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11. 发明申请

US20050078904A1 OPTOELECTRONIC WAVEGUIDING DEVICE AND OPTICAL MODULES 有权
标题翻译：光电波导装置和光模块
公开(公告)号：US20050078904A1
公开(公告)日：2005-04-14
申请号：US10614779
申请日：2003-07-09
申请人： Hiroshi Sato , Akira Taike , Kazunori Shinoda , Shinji Tsuji
发明人： Hiroshi Sato , Akira Taike , Kazunori Shinoda , Shinji Tsuji
IPC分类号： G02F1/017 , G02B6/12 , G02B6/122 , G02B6/34 , G02B6/42 , H01S5/022 , H01S5/026 , H01S5/12
CPC分类号： G02B6/12007 , G02B6/1228 , G02B6/4215 , G02B6/4265 , G02B6/4274 , G02B2006/12078 , H01S5/0265 , H01S5/12
摘要： An optical transmission device suitable for a high-speed and large-capacity optical transmission system. An optoelectronic waveguiding device including an optical waveguide layer and cladding layers each having a larger band gap than that of the optical waveguide are deposited above and beneath the optical waveguide layer formed on a semiconductor substrate. The waveguide and cladding layers comprise optical waveguides each having a MQW structure in a direction of a light propagation axis of the optical waveguide layer. Among these optical waveguides, there exists first and second optical waveguides, whose layer structures may be mutually different. The optoelectronic waveguiding device maybe characterized in that an optical waveguide made of a bulk crystal exists in a connection part between the MQW structure waveguides each having a different layer structure. The specific connected optoelectronic waveguiding device elements may include semiconductor lasers, modulators and/or amplifiers.
摘要翻译：适用于高速大容量光传输系统的光传输装置。在半导体衬底上形成的光波导层的上方和下方淀积包括光波导层和各自具有比光波导的带隙大的覆层的光电波导装置。波导和包层包括光波导，每个光波导在光波导层的光传播轴的方向上具有MQW结构。在这些光波导中，存在第一和第二光波导，其层结构可以相互不同。光电波导装置的特征在于，由块状晶体制成的光波导存在于具有不同层结构的MQW结构波导之间的连接部分中。特定连接的光电波导器件元件可以包括半导体激光器，调制器和/或放大器。

12. 发明申请

US20100215063A1 PULSE LASER APPARATUS 审中-公开
标题翻译：脉冲激光装置
公开(公告)号：US20100215063A1
公开(公告)日：2010-08-26
申请号：US12686637
申请日：2010-01-13
申请人： Xin GAO , Hiroyuki Ohashi , Kazunori Shinoda , Hiroshi Okamoto , Masayuki Saitoh
发明人： Xin GAO , Hiroyuki Ohashi , Kazunori Shinoda , Hiroshi Okamoto , Masayuki Saitoh
IPC分类号： H01S3/11
CPC分类号： H01S3/1118 , H01S3/0604 , H01S3/0627 , H01S3/09415 , H01S3/10092 , H01S3/1611 , H01S3/1618 , H01S3/1643 , H01S3/2308
摘要： The pulse laser light source 1 is provided with an excitation light source 10, lenses 11 through 13, a dichroic mirror 14, an amplifier medium 21, a first reflection portion 22, a laser medium 23, a third reflection portion 24, a saturable absorber 25 and a second reflection portion 26. The reflection portion 22 and the reflection portion 26 compose a laser resonator having the laser medium 23, the reflection portion 24 and the saturable absorber 25 on a resonance path. Further, the amplifier medium 21, the reflection portion 22, the laser medium 23, the reflection portion 24, the saturable absorber 25 and the reflection portion 26 are disposed in order and are integrated with each other. Therefore, the pulse laser light source 1 is able to output pulse laser light of high energy with a short pulse width.
摘要翻译：脉冲激光光源1设置有激发光源10，透镜11至13，分色镜14，放大器介质21，第一反射部22，激光介质23，第三反射部24，可饱和吸收体 25和第二反射部分26.反射部分22和反射部分26在谐振路径上组成具有激光介质23，反射部分24和可饱和吸收体25的激光谐振器。此外，放大器介质21，反射部分22，激光介质23，反射部分24，可饱和吸收器25和反射部分26依次布置并且彼此一体化。因此，脉冲激光光源1能够以短脉冲宽度输出高能量的脉冲激光。

13. 发明授权

US07738521B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07738521B2
公开(公告)日：2010-06-15
申请号：US11606186
申请日：2006-11-30
申请人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
发明人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18369 , H01S5/2009 , H01S5/221 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.
摘要翻译：超晶格结构用于自对准结构的激光器件的一部分，通过利用层中的电流的延伸来降低器件的电阻，注意高密度的横向传导的事实在超晶格结构中的掺杂对于降低激光器的电阻是有效的，以便降低操作电压并增加难以获得具有高载流子密度的晶体的氮化物型宽间隙半导体器件的功率，并且器件电阻高。

14. 发明授权

US07542208B2 Light collecting device and light collecting mirror 有权
标题翻译：集光装置和集光镜
公开(公告)号：US07542208B2
公开(公告)日：2009-06-02
申请号：US11578067
申请日：2005-04-13
申请人： Xin Gao , Hiroyuki Ohashi , Kazunori Shinoda
发明人： Xin Gao , Hiroyuki Ohashi , Kazunori Shinoda
IPC分类号： G02B27/10 , G02B5/10
CPC分类号： G02B19/0057 , G02B19/0028 , G02B27/0977 , G02B27/143
摘要： A beam-condensing unit has a first light source, a second light source, and a condenser mirror. The first and second light sources output a plurality of first and second light fluxes arrayed along a first direction, respectively. A condenser mirror has first and second optical plates that intersect with each other. The first optical plate includes a plurality of first reflecting portions that are arrayed along the first direction and reflect the first light fluxes, respectively. The second optical plate includes a plurality of second reflecting portions that are arrayed along the first direction alternately with the first reflecting portions and reflect the second light fluxes, respectively.
摘要翻译：光束聚光单元具有第一光源，第二光源和聚光镜。第一和第二光源分别输出沿着第一方向排列的多个第一和第二光束。聚光镜具有彼此相交的第一和第二光学板。第一光学板包括沿着第一方向排列并分别反射第一光束的多个第一反射部分。第二光学板包括多个第二反射部分，它们沿着第一方向与第一反射部分交替排列并分别反射第二光束。

15. 发明授权

US07340142B1 Integrated optoelectronic device and method of fabricating the same 有权
标题翻译：集成光电子器件及其制造方法
公开(公告)号：US07340142B1
公开(公告)日：2008-03-04
申请号：US11701467
申请日：2007-02-02
申请人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
发明人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
IPC分类号： G02F1/035 , G02F1/295 , G02B6/26 , G02B6/10 , G02B6/12 , H01L21/00
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译：集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。在InP衬底上形成InGaAsP层，以抑制在集成光电子器件的制造期间InP的质量传输。在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。

16. 发明授权

US5064257A Optical heterodyne scanning type holography device 失效
标题翻译：光外差扫描型全息装置
公开(公告)号：US5064257A
公开(公告)日：1991-11-12
申请号：US505605
申请日：1990-04-06
申请人： Kazunori Shinoda , Ming H. Wu , Yoshiji Suzuki , Ting-Chung Poon
发明人： Kazunori Shinoda , Ming H. Wu , Yoshiji Suzuki , Ting-Chung Poon
IPC分类号： G02F1/03 , G03H1/00 , G03H1/04 , G03H1/10 , G03H1/22
CPC分类号： G03H1/10 , G03H1/00 , G03H2001/0088 , G03H2001/0463 , G03H2225/20
摘要： There is disclosed an optical heterodyne scanning holography device capable of recording and reconstructing a holographic image of an object in real time by optical heterodyne-scanning the object, capturing a scattered wave from the object by a photodetector, and converting a heterodyne output current from the photodetector to a spatial light modulator for coherent processing optically.
摘要翻译：公开了一种光学外差扫描全息装置，其能够通过光学外差扫描物体实时记录和重建物体的全息图像，通过光电检测器从物体捕获散射波，并将外差输出电流从光电探测器用于空间光调制器，用于光学相干处理。

17. 发明授权

US4763996A Spatial light modulator 失效
标题翻译：空间光调制器
公开(公告)号：US4763996A
公开(公告)日：1988-08-16
申请号：US798932
申请日：1985-11-18
申请人： Tsutomu Hara , Yoshiharu Ooi , Kazunori Shinoda , Koji Ichie
发明人： Tsutomu Hara , Yoshiharu Ooi , Kazunori Shinoda , Koji Ichie
IPC分类号： G02F1/03 , H04N1/032 , H04N1/23
CPC分类号： H04N1/032 , G02F1/0333 , H04N1/23
摘要： A crystal structure arrangement used in a spatial light modulator wherein an electrooptic crystal structure faces an electron beam source, such as a photocathode or an electron gun, within a vacuum envelope. Electrons emitted from the electron beam source in response to an image or image signal source are stored on the surface of the electrooptic crystal structure to form a charge image thereon and then to change the refractive index of the electrooptic crystal structure corresponding to the stored charge image. The refractive index change is read out using a laser beam or incandescent light beam.
摘要翻译：在空间光调制器中使用的晶体结构布置，其中电光晶体结构在真空外壳内面对诸如光电阴极或电子枪的电子束源。响应于图像或图像信号源从电子束源发射的电子被存储在电光晶体结构的表面上以在其上形成电荷图像，然后改变对应于存储的电荷图像的电光晶体结构的折射率。使用激光束或白炽光束读出折射率变化。

18. 发明授权

US5844931A Semiconductor laser devices 失效
标题翻译：半导体激光器件
公开(公告)号：US5844931A
公开(公告)日：1998-12-01
申请号：US903881
申请日：1997-07-31
申请人： Misuzu Sagawa , Kiyohisa Hiramoto , Tomonobu Tsuchiya , Takashi Toyonaka , Kazunori Shinoda
发明人： Misuzu Sagawa , Kiyohisa Hiramoto , Tomonobu Tsuchiya , Takashi Toyonaka , Kazunori Shinoda
IPC分类号： H01S5/00 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/32 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/16 , H01S5/168 , H01S5/22 , H01S5/3211 , H01S5/3213
摘要： A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.
摘要翻译：半导体激光器，不会由于电涌而引起突然的故障。由GaAs缓冲层形成的脊，与GaAs衬底晶格匹配的n-InGaP包层，应变量子阱有源层，与GaAs衬底晶格匹配的p-InGaP包层在n-GaAs衬底上埋设n-InGaP电流型p型GaAs波导层，与GaAs衬底晶格匹配的p-InGaP包覆层和p-GaAs覆盖层，阻挡层。器件条纹由器件中的电流注入区域和小面附近的电流非注入区域构成。

19. 发明授权

US5805316A Twin-image elimination apparatus and method 失效
标题翻译：双图像消除装置和方法
公开(公告)号：US5805316A
公开(公告)日：1998-09-08
申请号：US705971
申请日：1996-08-30
申请人： Kazunori Shinoda , Ting-Chung Poon , Ming Hsien Wu , Yoshiji Suzuki
发明人： Kazunori Shinoda , Ting-Chung Poon , Ming Hsien Wu , Yoshiji Suzuki
IPC分类号： G03H1/10 , G03H1/00 , G03H1/22
CPC分类号： G03H1/22 , G03H1/0443 , G03H2001/0088 , G03H2001/0463 , G03H2001/262 , G03H2225/20 , G03H2225/33 , G03H2225/60
摘要： The twin-image elimination apparatus of the present invention comprises (a) a scanning light source for emitting a scanning light beam; (b) an interference device which converts the scanning light beam from the scanning light source into a spherical wave and a plane wave having temporal frequencies different from each other and combines the spherical and plane waves together; (c) a scanner for scanning an object with the combined light beam from the interference device; (d) a photodetector for detecting a scattered wave from the object; (e) a first multiplier which converts an output signal of the photodetector into a cosine-coded holographic information; (f) a second multiplier which converts the output signal of the photodetector into a sine-coded holographic information; and (g) a holographic reconstruction device which converts output signals of the first and second multipliers into a sum signal, in which these output signals are added together with a phase difference of .pi./2+2n.pi. (wherein n is an integer not less than 0), so as to reproduce an image of the object without the presence of its twin image. Hence, at the time of reconstructing a hologram, the virtual image component contained in the output signal of the photodetector can be removed, thereby improving the image quality of the reconstructed image.
摘要翻译：本发明的双图像消除装置包括：（a）用于发射扫描光束的扫描光源; （b）将来自扫描光源的扫描光束转换为球面波的干涉装置和具有彼此不同的时间频率的平面波，并将球面和平面波组合在一起; （c）用来自干涉装置的组合光束扫描物体的扫描仪; （d）用于检测来自物体的散射波的光检测器; （e）将所述光电检测器的输出信号转换为余弦编码的全息信息的第一乘法器; （f）将光电检测器的输出信号转换为正弦编码的全息信息的第二乘法器; 和（g）将第一和第二乘法器的输出信号转换为和信号的全息重建装置，其中这些输出信号以pi / 2 + 2n pi的相位差加在一起（其中n是不小于整数的整数）比0），以便在没有其双重图像的情况下再现对象的图像。因此，在重建全息图时，可以去除包含在光电检测器的输出信号中的虚拟图像分量，从而提高重建图像的图像质量。

20. 发明授权

US08774571B2 Optical device, optical module, and method for manufacturing optical device 有权
标题翻译：光学装置，光学模块以及光学装置的制造方法
公开(公告)号：US08774571B2
公开(公告)日：2014-07-08
申请号：US13590718
申请日：2012-08-21
申请人： Kazunori Shinoda , Shigeki Makino , Hideo Arimoto
发明人： Kazunori Shinoda , Shigeki Makino , Hideo Arimoto
IPC分类号： G02B6/12
CPC分类号： G02F1/13471 , H01S5/0085 , H01S5/02216 , H01S5/02284 , H01S5/0265 , H01S5/06256 , H01S5/1209
摘要： An optical device includes a substrate and a first optical waveguide including a mesa. The mesa includes a first lower clad layer portion, a first core layer portion, and a first upper clad layer portion. The first lower clad layer portion, the first core layer portion, and the first upper clad layer portion are disposed in this order from the substrate side. The optical device also includes a first etch stop layer configured to stop etching when the first optical waveguide is formed. The first etch stop layer being laminated over the substrate. The first optical waveguide is laminated on the first etch stop layer.
摘要翻译：光学装置包括基板和包括台面的第一光波导。台面包括第一下包层部分，第一芯层部分和第一上包层部分。第一下包层部分，第一芯层部分和第一上包层部分从衬底侧依次设置。该光学器件还包括第一蚀刻停止层，其被配置为在形成第一光波导时停止蚀刻。第一蚀刻停止层层压在衬底上。第一光波导层压在第一蚀刻停止层上。

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