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    • 12. 发明授权
    • Device and method for anisotropic plasma etching of a substrate, a silicon body in particular
    • 特别是用于各向异性等离子体蚀刻衬底,硅体的装置和方法
    • US07285228B2
    • 2007-10-23
    • US10506457
    • 2003-03-05
    • Franz LaermerKlaus BreitschwerdtBernd Kutsch
    • Franz LaermerKlaus BreitschwerdtBernd Kutsch
    • C23F1/00
    • H01L21/67069
    • A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
    • 一种用于实现用于各向异性等离子体蚀刻衬底(例如硅体)的方法的方法和装置。 该装置具有用于产生高频电磁交变场的室和等离子体源,以及用于产生等离子体的反应区域,所述反应区域在室内产生,其通过蚀刻气体和钝化气体引入的交变场的作用而产生 同时又与之空间分离。 排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。 该装置具有在反应区域下游的混合区域,其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。
    • 14. 发明申请
    • Device and method for anisotropically plasma etching of a substrate, particularly a silicon body
    • 用于各向异性等离子体蚀刻衬底,特别是硅体的装置和方法
    • US20050126710A1
    • 2005-06-16
    • US10506457
    • 2003-03-05
    • Franz LaermerKlaus BreitschwerdtBernd Kutsch
    • Franz LaermerKlaus BreitschwerdtBernd Kutsch
    • H01L21/00C23F1/00
    • H01L21/67069
    • A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
    • 一种用于实现用于各向异性等离子体蚀刻衬底(例如硅体)的方法的方法和装置。 该装置具有用于产生高频电磁交变场的室和等离子体源,以及用于产生等离子体的反应区域,所述反应区域在室内产生,其通过蚀刻气体和钝化气体引入的交变场的作用而产生 同时又与之空间分离。 排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。 该装置具有在反应区域下游的混合区域,其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。