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    • 11. 发明申请
    • Organic compound and organic electrolumiscent device
    • 有机化合物和有机电致发光器件
    • US20060194073A1
    • 2006-08-31
    • US10548984
    • 2004-03-05
    • Masato Okada
    • Masato Okada
    • C09K11/06H01L51/54H05B33/14
    • H01L51/0086C07D403/10C09K11/06C09K2211/1029C09K2211/185H01L51/0067H01L51/0072H01L51/0077H01L51/0081H01L51/0084H01L51/0085H01L51/0089H01L51/009H01L51/5012H01L51/5016H05B33/14
    • An object of the present invention is to provide an organic compound easy for coating in a coating process and capable of presenting a high luminous efficiency, as well as an organic electroluminescent element utilizing the organic compound and exhibiting the high luminous efficiency. The object is achieved by an organic compound represented by EM-X—CTM or (EM-X—CTM)-Y, wherein EM is a fluorescent light emitting material or phosphorescent light emitting material; CTM is a charge transporting material; X is a chemical bonding chain for bonding EM and CTM; and Y is a substituent introduced at any part of EM, CTM or X for improving at least solubility to a solvent. Furthermore, in an organic EL element provided with at least a pair of opposite electrodes and one or more organic compound layers sandwiched between the electrodes, the object is achieved by containing a compound represented by EM-X—CTM or (EM-X—CTM)-Y in at least one layer of the organic compound layers.
    • 本发明的目的是提供一种易于在涂布工艺中涂布并能够呈现高发光效率的有机化合物以及利用该有机化合物并表现出高发光效率的有机电致发光元件。 该目的通过EM-X-CTM或(EM-X-CTM)-Y表示的有机化合物实现,其中EM是荧光发光材料或磷光发光材料; CTM是电荷输送材料; X是一种用于粘合EM和CTM的化学键合链; 并且Y是在EM,CTM或X的任何部分引入的用于改善至少溶剂溶解度的取代基。 此外,在设置有至少一对相对电极和夹在电极之间的一个或多个有机化合物层的有机EL元件中,通过含有由EM-X-CTM或(EM-X-CTM)表示的化合物 )-Y在至少一层有机化合物层中。
    • 13. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US5020067A
    • 1991-05-28
    • US472285
    • 1990-01-30
    • Masato Okada
    • Masato Okada
    • H01S5/00B82Y20/00H01S5/16H01S5/20H01S5/223
    • H01L33/0062H01S5/16H01S5/2231H01S5/168H01S5/2004
    • A semiconductor laser device includes an n type Al.sub.x Ga.sub.1-x As first cladding layer disposed on an n type GaAs substrate, an n type Al.sub.y Ga.sub.1-y As (x>y) light guide layer disposed on the first cladding layer, an Al.sub.z Ga.sub.l-z As (y>z) active layer disposed on the light guide layer, a p type Al.sub.p Ga.sub.l-p As second cladding layer disposed on the active layer and including a ridge except in the neighborhood of at least of the cavity facets, an n type GaAs current blocking layer disposed on the second cladding layer but not on top of the ridge, and a p type GaAs contact layer disposed on the current blocking layer and on top of the ridge portion.
    • 半导体激光装置包括设置在n型GaAs衬底上的n型Al x Ga 1-x As第一包层,设置在第一覆层上的n型Al y Ga 1-y As(x> y)导光层,AlzGal-zAs(y> z)设置在所述导光层上的有源层,设置在所述有源层上并且包括除了至少所述腔面之外的脊的p型AlpGal-pAs第二包覆层,设置在所述有源层上的n型GaAs电流阻挡层 第二覆层但不在脊顶上,并且ap型GaAs接触层设置在电流阻挡层上并在脊部的顶部。
    • 14. 发明授权
    • Method of forming a uniform resist film by selecting a duration of
rotation
    • 通过选择旋转持续时间形成均匀的抗蚀剂膜的方法
    • US4748053A
    • 1988-05-31
    • US679317
    • 1984-12-07
    • Masato Okada
    • Masato Okada
    • B05D1/40H01L21/027B05D3/12
    • B05D1/40Y10S430/136
    • In a method of coating a substrate with a resist film, the substrate is rotated at a first speed of rotation, and a duration of rotation, and a multiplication product between the first speed and the rotation in consideration of a desired thickness after a resist is dropped on the substrate. The resist is uniformly spread on the substrate to form a wide uniform area because uniformity of the resist depends not only on the first speed but also on the duration and the multiplication product. After elapse of the duration of rotation, the spread resist is dried to form the resist film by rotating the substrate at a second speed slower than the first speed. The first speed is selected between 100 (rpm) and 6,000 (rpm) while the duration and the multiplication product do not exceed 20 (sec) and 24,000 (rpm.sec), respectively. The second speed is not faster than 130 (rpm).
    • 在用抗蚀剂膜涂布基板的方法中,基于第一旋转速度旋转基板,考虑到抗蚀剂后的期望厚度,旋转持续时间和第一速度与旋转之间的乘积为 落在基材上。 由于抗蚀剂的均匀性不仅取决于第一速度,而且取决于持续时间和乘积,抗蚀剂均匀地铺展在基板上以形成宽均匀区域。 在经过旋转持续时间之后,通过以比第一速度慢的第二速度旋转基板来干燥扩展抗蚀剂以形成抗蚀剂膜。 第一速度选择在100(rpm)和6,000(rpm)之间,而持续时间和乘积分别不超过20(sec)和24,000(rpm.sec)。 第二速度不超过130(rpm)。