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11. 发明授权

US07479416B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07479416B2
公开(公告)日：2009-01-20
申请号：US11330312
申请日：2006-01-10
申请人： Kyung-Min Park , Jin-Goo Jung , Chun-Gi You
发明人： Kyung-Min Park , Jin-Goo Jung , Chun-Gi You
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F1/136227 , H01L27/1214 , H01L27/3244 , H01L51/56
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，其包括：在衬底上形成包括栅电极，漏电极，源电极和半导体的薄膜晶体管; 在漏极和源电极上形成第一钝化层; 在所述第一钝化层上形成透明导电层; 使用光致抗蚀剂蚀刻透明导电层作为蚀刻掩模以暴露第一钝化层的部分并形成连接漏电极的像素电极; 灰化第一钝化层和光致抗蚀剂; 并去除光致抗蚀剂。

12. 发明申请

US20080057723A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080057723A1
公开(公告)日：2008-03-06
申请号：US11846943
申请日：2007-08-29
申请人： Kyung-Min Park
发明人： Kyung-Min Park
IPC分类号： H01L21/311
CPC分类号： H01L21/3105 , H01L27/1462 , H01L27/14683
摘要： A method for manufacturing an image sensor according to embodiments includes forming a transistor over a substrate. A protective layer including boron (B) may be formed, covering the transistor formed over the substrate. The protective layer including the boron may be annealed to move foreign substances including the boron to the surface of the protective layer. The surface of the protective layer including the foreign material may be removed. An oxide protective layer may be formed over the protective layer including the boron where the foreign substance is removed.
摘要翻译：根据实施例的用于制造图像传感器的方法包括在衬底上形成晶体管。可以形成包括硼（B）的保护层，覆盖在衬底上形成的晶体管。包括硼的保护层可以退火以将包括硼的异物移动到保护层的表面。可以除去包括异物的保护层的表面。氧化物保护层可以形成在包含除去异物的硼的保护层上。

13. 发明申请

US20060164582A1 Thin film transistor array panel, liquid crystal display including the panel and manufacturing method thereof 审中-公开
标题翻译：薄膜晶体管阵列面板，包括面板的液晶显示器及其制造方法
公开(公告)号：US20060164582A1
公开(公告)日：2006-07-27
申请号：US11341555
申请日：2006-01-26
申请人： Seong-Ho Kim , Gyung-Soon Park , Kyung-Min Park , Seung-Gon Kang , Chun-Gi You
发明人： Seong-Ho Kim , Gyung-Soon Park , Kyung-Min Park , Seung-Gon Kang , Chun-Gi You
IPC分类号： G02F1/1333
CPC分类号： G02F1/1341 , G02F1/1339 , G02F1/136227 , G02F2001/133388 , G02F2201/50
摘要： A thin film transistor array panel is provided, which includes: a substrate having a display area including a plurality of display areas, and a peripheral area surrounding the display area; a plurality of thin film transistors respectively formed in the pixel areas; a passivation layer made of organic material and covering the thin film transistors; a plurality of pixel electrode respectively connected to the thin film transistors and formed on the passivation layer of the pixel areas; an organic light blocking member formed with the same layer as the pixel electrode and disposed in the peripheral area; and a sealant surrounding the display area, the sealant being formed on the passivation layer in the peripheral area. The organic blocking member overlaps the sealant.
摘要翻译：提供一种薄膜晶体管阵列面板，其包括：具有包括多个显示区域的显示区域的基板和围绕显示区域的外围区域; 分别形成在像素区域中的多个薄膜晶体管; 由有机材料制成并覆盖薄膜晶体管的钝化层; 分别连接到所述薄膜晶体管并形成在所述像素区域的钝化层上的多个像素电极; 形成与像素电极相同层并设置在周边区域中的有机遮光部件; 以及围绕显示区域的密封剂，密封剂形成在周边区域中的钝化层上。有机阻挡构件与密封剂重叠。

14. 发明授权

US08610126B2 Flat panel display device with simplified efficient structure and method of manufacturing the same 有权
标题翻译：具有简化效率结构的平板显示装置及其制造方法
公开(公告)号：US08610126B2
公开(公告)日：2013-12-17
申请号：US13042986
申请日：2011-03-08
申请人： Kyung-Min Park
发明人： Kyung-Min Park
IPC分类号： H01L33/60
CPC分类号： H01L27/1255
摘要： Provided are a flat panel display device and a method of manufacturing the same. The flat panel display device includes a first thin-film transistor including a first active layer, a first insulation layer disposed on the first active layer, and a first gate electrode disposed on the first insulation layer; a second thin-film transistor including a second active layer, the first insulation layer disposed on the second active layer, a second insulation layer disposed on the first insulation layer, and a second gate electrode disposed on the second insulation layer, and electrically connected to the first thin-film transistor; and a capacitor electrically connected to the first thin-film transistor and the second thin-film transistor. In the structure as described above, since different numbers of insulation layers are interposed between active layers and gate electrode in each of the first thin-film transistor and the second thin-film transistor, threshold voltages of the first thin-film transistor and the second thin-film transistor are significantly different from each other, and thus it becomes easy to control the threshold voltages of the first thin-film transistor and the second thin-film transistor.
摘要翻译：提供一种平板显示装置及其制造方法。平板显示装置包括：第一薄膜晶体管，包括第一有源层，设置在第一有源层上的第一绝缘层和设置在第一绝缘层上的第一栅电极; 第二薄膜晶体管，包括第二有源层，设置在第二有源层上的第一绝缘层，设置在第一绝缘层上的第二绝缘层，以及设置在第二绝缘层上的第二栅极，并且电连接到第一薄膜晶体管; 以及电连接到第一薄膜晶体管和第二薄膜晶体管的电容器。在上述结构中，由于在第一薄膜晶体管和第二薄膜晶体管的每一个的有源层和栅电极之间插入不同数量的绝缘层，所以第一薄膜晶体管和第二薄膜晶体管的阈值电压薄膜晶体管彼此显着不同，因此容易控制第一薄膜晶体管和第二薄膜晶体管的阈值电压。

15. 发明申请

US20110221989A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20110221989A1
公开(公告)日：2011-09-15
申请号：US13004561
申请日：2011-01-11
申请人： Dae-Won LEE , Kyung-Min Park
发明人： Dae-Won LEE , Kyung-Min Park
IPC分类号： G02F1/136 , H01J9/00
CPC分类号： G02F1/134309 , G02F1/1339 , G02F2001/133388 , G02F2001/134318
摘要： A Liquid Crystal Display (LCD) device and a method of manufacturing the same are provided. The liquid crystal molecules are inclined and rearranged in a radial shape by patterning upper and lower electrodes across and apart from each other on dummy pixels disposed on a black matrix formed in a non-display area of an LCD device and applying an electric field to a liquid crystal layer via the upper and lower electrodes. Thus, ion impurities in the non-display area can be prevented from dispersing to a display area, thereby improving edge part stains of the LCD device. The LCD device includes a first substrate including first pixel electrodes of the dummy pixels; a second substrate facing the first substrate and including first common electrodes formed across and apart from the first pixel electrodes; and a liquid crystal layer disposed between the first substrate and the second substrate, and having liquid crystal molecules rearranged by an electric field applied via the first pixel electrodes and the first common electrodes.
摘要翻译：提供一种液晶显示器（LCD）装置及其制造方法。液晶分子通过在设置在LCD装置的非显示区域中的黑矩阵上的虚拟像素上彼此跨越并分离上下电极而倾斜并重新排列，并将电场施加到液晶层通过上下电极。因此，可以防止非显示区域中的离子杂质分散到显示区域，从而改善LCD装置的边缘部分污渍。 LCD装置包括：第一基板，包括虚拟像素的第一像素电极; 面向所述第一基板的第二基板，并且包括跨越并与所述第一像素电极分离的第一公共电极; 以及设置在第一基板和第二基板之间的液晶层，并且通过经由第一像素电极和第一公共电极施加的电场重新排列液晶分子。

16. 发明授权

US07803672B2 Thin film transistor array panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07803672B2
公开(公告)日：2010-09-28
申请号：US12433743
申请日：2009-04-30
申请人： Kyung-Min Park , Jin-Goo Jung , Chun-Gi You , Jae-Byoung Chae , Tae-Ill Kim
发明人： Kyung-Min Park , Jin-Goo Jung , Chun-Gi You , Jae-Byoung Chae , Tae-Ill Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/4908 , H01L29/66757
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a semiconductor layer of polysilicon on an insulating substrate; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming a source region and a drain region by doping conductive impurities in the semiconductor layer; forming an interlayer insulating layer covering the gate electrode; forming a source electrode and a drain electrode respectively connected to the source and the drain regions; forming a passivation layer covering the source and the drain electrodes; forming a pixel electrode connected to the drain electrode; and forming a first alignment key when forming one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode, wherein one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode is at least formed by photolithography process using a photoresist pattern as an etch mask, and a second alignment key completely covering the first alignment key is formed at the same layer as the photoresist pattern.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上形成多晶硅半导体层; 在所述半导体层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 通过掺杂半导体层中的导电杂质形成源区和漏区; 形成覆盖所述栅电极的层间绝缘层; 形成分别连接到源区和漏区的源电极和漏电极; 形成覆盖源极和漏极的钝化层; 形成连接到所述漏电极的像素电极; 以及在形成从半导体层，栅电极，源极和漏极以及像素电极中选择的一个时形成第一对准键，其中从半导体层，栅电极，源电极和漏电极中选择一个，并且至少通过使用光致抗蚀剂图案作为蚀刻掩模的光刻工艺形成像素电极，并且在与光致抗蚀剂图案相同的层处形成完全覆盖第一对准键的第二对准键。

17. 发明申请

US20090192217A1 METHOD AND COMPOSITION FOR TREATING ACNE USING LIGNAN COMPOUNDS 有权
标题翻译：使用LIGNAN化合物治疗ACNE的方法和组合物
公开(公告)号：US20090192217A1
公开(公告)日：2009-07-30
申请号：US10585553
申请日：2005-01-07
申请人： Jae-Kwan Hwang , Jae-Youn Chung , Hee-Chul Chung , Kyung-Min Park
发明人： Jae-Kwan Hwang , Jae-Youn Chung , Hee-Chul Chung , Kyung-Min Park
IPC分类号： A01N43/30 , C07D317/54 , A61P31/04
CPC分类号： A61K31/085 , A61K31/05 , A61K31/352
摘要： The present invention relates to a method and composition for treating acne using lignan compounds represented by Formula 1. More particularly, the invention relates to an antibacterial composition against acne-causing bacteria, containing lignan compounds represented by Formula 1, as well as a method for treating acne using the same. The lignan compounds represented by Formula 1 are excellent not only in the antibacterial activity of, inhibiting the growth of acne-causing bacteria, but also in thermal stability. Accordingly, the lignan compounds may be useful as antibacterial agents against the acne-causing bacteria, and acne treatment agents.
摘要翻译：本发明涉及使用由式1表示的木酚素化合物治疗痤疮的方法和组合物。更具体地说，本发明涉及含有由式1表示的木酚素化合物的抗痤疮细菌的抗菌组合物，以及用于使用相同的治疗痤疮。由式1表示的木酚素化合物不仅具有抑制痤疮细菌生长的抗菌活性以及热稳定性的优异性。因此，木脂素化合物可用作抗痤疮细菌和痤疮治疗剂的抗菌剂。

18. 发明申请

US20090160004A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE DEVICE 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090160004A1
公开(公告)日：2009-06-25
申请号：US12334507
申请日：2008-12-14
申请人： Kyung-Min Park
发明人： Kyung-Min Park
IPC分类号： H01L21/04 , H01L31/0224 , H01L31/0232
CPC分类号： H01L21/7682 , H01L21/76828 , H01L27/14636
摘要： Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device. According to embodiments, a method may include forming a metal layer on and/or over a lower structure formed on and/or over a semiconductor substrate, forming neighboring metal lines by patterning the metal layer by a photolithography process, forming an insulating layer on and/or over a surface of the lower structure and forming a void between the metal lines, and performing heat treatment to the metal lines and the insulating layer having the void. According to embodiments, a void may be used as a buffer against expansion of the metal lines in sintering due to a difference in a thermal expansion coefficient. This may prevent a blister phenomenon that may separate an insulating film from metal lines.
摘要翻译：实施例涉及半导体器件和半导体器件的制造方法。根据实施例，一种方法可以包括在形成在半导体衬底之上和/或之上的下部结构上和/或上方形成金属层，通过光刻工艺图案化金属层形成相邻的金属线，在其上形成绝缘层， /或在下部结构的表面上方，并且在金属线之间形成空隙，并对金属线和具有空隙的绝缘层进行热处理。根据实施例，由于热膨胀系数的差异，可以使用空隙作为缓冲金属线在烧结中的膨胀。这可以防止可能将绝缘膜与金属线分离的起泡现象。

19. 发明申请

US20080124849A1 FABRICATING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20080124849A1
公开(公告)日：2008-05-29
申请号：US11869518
申请日：2007-10-09
申请人： Kyung-Min Park
发明人： Kyung-Min Park
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/28052 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： The embodiment relates to a fabricating method of a semiconductor device, the method comprising the steps of: forming a gate oxide film, a gate electrode, and a side spacer on a semiconductor substrate; forming a source/drain area by implanting ion on the semiconductor substrate; forming a carbon layer on the nickel silicide surface by performing a primary thermal processing process on the nickel silicide film; and removing the carbon layer by performing a secondary thermal processing process on the nickel silicide film under an ambient gas.
摘要翻译：该实施例涉及一种半导体器件的制造方法，该方法包括以下步骤：在半导体衬底上形成栅极氧化膜，栅极电极和侧面间隔物; 通过在半导体衬底上注入离子形成源/漏区; 通过对硅化镍膜进行一次热处理工艺，在硅化镍表面上形成碳层; 并通过在环境气体下对硅化镍膜进行二次热处理工艺来除去碳层。

20. 发明申请

US20080048332A1 METHOD FOR FORMING INTERMETAL DIELECTRIC IN SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体器件中形成介电介质的方法
公开(公告)号：US20080048332A1
公开(公告)日：2008-02-28
申请号：US11841038
申请日：2007-08-20
申请人： Kyung-Min Park
发明人： Kyung-Min Park
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76825 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an intermetal dielectric in a semiconductor device includes the steps of: forming metal wiring patterns electrically connecting circuit devices on a silicon substrate provided with the predetermined semiconductor circuit devices; forming a first silicon oxide film electrically isolating the metal wiring patterns; forming a second silicon oxide film on the first silicon oxide film; and ion-implanting silicon or oxygen into the inside of the second silicon oxide film.
摘要翻译：在半导体器件中形成金属间电介质的方法包括以下步骤：在设置有预定半导体电路器件的硅衬底上形成电连接电路器件的金属布线图; 形成电绝缘金属布线图案的第一氧化硅膜; 在所述第一氧化硅膜上形成第二氧化硅膜; 以及将硅或氧离子注入到第二氧化硅膜的内部。

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