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11. 发明申请

US20100111817A1 TITANIUM OXIDE PHOTOCATALYST AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：氧化钛光催化剂及其制造方法
公开(公告)号：US20100111817A1
公开(公告)日：2010-05-06
申请号：US12596293
申请日：2008-04-18
申请人： Noboru Taniguchi , Shuzo Tokumitsu , Tomohiro Kuroha , Kenichi Tokuhiro , Akio Nakashima , Keita Kobayashi , Shinji Nakahara
发明人： Noboru Taniguchi , Shuzo Tokumitsu , Tomohiro Kuroha , Kenichi Tokuhiro , Akio Nakashima , Keita Kobayashi , Shinji Nakahara
IPC分类号： C01B11/24 , C01G23/04
CPC分类号： A61L9/18 , B01J21/063 , B01J27/135 , B01J35/004 , B01J35/1019 , B01J37/26 , C01G23/00 , C01G23/047 , C01P2002/54 , C01P2006/12
摘要： A titanium oxide photocatalyst that is capable of improving a decomposition rate, and a method for producing the same are provided. The titanium oxide photocatalyst of the present invention is a titanium oxide photocatalyst containing at least an anatase-type titanium oxide and fluorine, wherein a content of the fluorine is 2.5 wt % to 3.5 wt %, and 90 wt % or more of the fluorine is chemically bonded to the anatase-type titanium oxide.
摘要翻译：提供能够提高分解率的氧化钛光催化剂及其制造方法。本发明的氧化钛光催化剂是至少含有锐钛矿型氧化钛和氟的氧化钛光催化剂，其中氟的含量为2.5〜3.5重量％，氟的90重量％以上为化学键合到锐钛矿型氧化钛。

12. 发明申请

US20120156578A1 PHOTOELECTROCHEMICAL CELL AND ENERGY SYSTEM USING SAME 有权
标题翻译：光电化学电池和使用相同的能量系统
公开(公告)号：US20120156578A1
公开(公告)日：2012-06-21
申请号：US13393107
申请日：2011-03-22
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
IPC分类号： H01M8/06 , C25B1/04 , C25B9/04
CPC分类号： C25B1/003 , B01J35/004 , C25B11/0442 , H01M8/0656 , Y02E60/366 , Y02E60/368 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and semiconductor layers (122, 123) disposed on the conductor (121); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with surfaces of the semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). A band edge level ECS of a conduction band, a band edge level EVS of a valence band, and a Fermi level EFS in a surface near-field region of the semiconductor layer, and a band edge level ECJ of a conduction band, a band edge level EVJ of a valence band, and a Fermi level EFJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, ECS-EFS>ECJ-EFJ, EFS-EVS −4.44 eV, and EVS
摘要翻译：光电化学电池（100）包括：包括导体（121）和设置在导体（121）上的半导体层（122,123）的半导体电极（120）; 与所述导体（121）电连接的对电极（130）; 与所述半导体层（123）和所述对电极（130）的表面接触的电解质（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。导带的带边缘电平ECS，价带的带边缘电平EVS和半导体层的表面近场区域中的费米能级EFS，以及导带的带边缘电平ECJ，带 ECS-EFS> ECJ-EFJ，EFS-EVS -4.44eV，EVS <-5.67eV。半导体层的表面近场区域中的费米能级EFS和具有导体的半导体层的结面近场区域中的费米能级EFJ相对于真空度满足-5.67eV

13. 发明申请

US20110203661A1 OPTICALLY PUMPED SEMICONDUCTOR AND DEVICE USING THE SAME 有权
标题翻译：光学泵浦半导体和使用它的器件
公开(公告)号：US20110203661A1
公开(公告)日：2011-08-25
申请号：US13119117
申请日：2010-04-26
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
IPC分类号： H01L31/0328
CPC分类号： B01J35/004 , B01J23/002 , B01J23/08 , B01J23/10 , B01J23/62 , B01J2523/00 , C01B3/042 , C01B13/0207 , C01G25/006 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2004/34 , C01P2006/40 , C25B1/003 , Y02E60/364 , B01J2523/25 , B01J2523/32 , B01J2523/48 , B01J2523/375 , B01J2523/33
摘要： The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-α, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and α denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a≦b≦c, conditions that 0.41727 nm≦a, b, c≦0.42716 nm and a/c≧0.98 are satisfied.
摘要翻译：根据本发明的光泵浦半导体是作为钙钛矿氧化物的半导体的光泵浦半导体。光泵浦半导体具有由通式BaZr1-xMxO3-α表示的组成，其中M表示选自三价元素中的至少一种元素，x表示大于0但小于0.8的数值，α表示氧缺乏是数值超过0但小于1.5的缺氧。光泵浦半导体具有立方晶，四方晶或正交晶体的晶体系。如果晶体系的晶格常数被称为a，b和c，条件是满足0.41727nm＆nlE; a，b，c＆nlE; 0.42716nm和a /c≥0.98的条件。

14. 发明授权

US08821700B2 Photoelectrochemical cell and energy system using same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US08821700B2
公开(公告)日：2014-09-02
申请号：US13502322
申请日：2010-11-04
申请人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
发明人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
IPC分类号： C25B1/04 , C25B5/00 , C25B9/06 , C25B1/00 , C01B3/04 , H01M8/06 , H01M14/00
CPC分类号： C25B1/003 , C01B3/042 , H01M8/0606 , H01M14/005 , Y02E60/364 , Y02E60/366 , Y02E60/50 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
摘要翻译：光电化学电池（100）包括：包括导体（121），具有纳米管阵列结构的第一n型半导体层（122）和第二n型半导体层（123）的半导体电极（120）连接到导体（121）的对电极（130）; 与第二n型半导体层（123）和对电极（130）接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。相对于真空度，第二n型半导体层（123）中的导带和价带的带边缘电平分别高于导带和带隙的带边缘电平，第一n型半导体层（122），（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（123）的费米能级，（III）导体（121）的费米能级高于第一n型半导体层（122）的费米能级。

15. 发明授权

US08734625B2 Hydrogen generation device 有权
标题翻译：氢气发生装置
公开(公告)号：US08734625B2
公开(公告)日：2014-05-27
申请号：US13522855
申请日：2011-01-19
申请人： Takahiro Suzuki , Takaiki Nomura , Kazuhito Hatoh , Noboru Taniguchi , Tomohiro Kuroha , Kenichi Tokuhiro
发明人： Takahiro Suzuki , Takaiki Nomura , Kazuhito Hatoh , Noboru Taniguchi , Tomohiro Kuroha , Kenichi Tokuhiro
IPC分类号： C25B9/00 , C25B11/00 , C25B9/04 , C25B9/06 , C25B9/16 , C25B11/04
CPC分类号： C25B1/003 , C01B3/042 , C01B2203/066 , Y02E60/364 , Y02E60/368
摘要： A hydrogen generation device (100) of the present invention includes: a transparent substrate (1); a photocatalytic electrode (4) formed of a transparent conductive layer (2) and a photocatalytic layer (3) disposed on the transparent substrate (1); a counter electrode (8) connected electrically to the transparent conductive layer (2); a water-containing electrolyte solution layer provided between the photocatalytic electrode (3) and the counter electrode (8); a separator (6) that separates the electrolyte solution layer into a first electrolyte solution layer (5) in contact with the photocatalytic electrode (4) and a second electrolyte solution layer (7) in contact with the counter electrode (8); a first gas outlet (14) for discharging a gas generated in the first electrolyte solution layer (5); and a second gas outlet (15) for discharging a gas generated in the second electrolyte solution layer (7). The photocatalytic electrode (4) and the counter electrode (8) are arranged so that a surface of the photocatalytic layer (3) and a surface of the counter electrode (8) face each other. The separator (6) allows an electrolyte in the electrolyte solution layer to pass therethrough and prevents hydrogen gas and oxygen gas in the electrolyte solution layer from passing therethrough.
摘要翻译：本发明的氢产生装置（100）包括：透明基板（1）; 由透明导电层（2）和设置在透明基板（1）上的光催化层（3）形成的光催化电极（4）; 与所述透明导电层（2）电连接的对电极（8）; 设置在光催化剂电极（3）和对电极（8）之间的含水电解液层; 将电解质溶液层分离成与光催化剂电极（4）接触的第一电解质溶液层（5）和与反电极（8）接触的第二电解液层（7）的分离器（6）。用于排出在第一电解质溶液层（5）中产生的气体的第一气体出口（14）; 和用于排出在第二电解质溶液层（7）中产生的气体的第二气体出口（15）。光催化剂电极（4）和对电极（8）的配置使得光催化剂层（3）的表面和对置电极（8）的表面彼此面对。分离器（6）允许电解质溶液层中的电解质通过，防止电解质溶液层中的氢气和氧气通过。

16. 发明申请

US20120063967A1 HYDROGEN GENERATION SYSTEM AND HOT WATER PRODUCTION SYSTEM 审中-公开
标题翻译：氢发生系统和热水生产系统
公开(公告)号：US20120063967A1
公开(公告)日：2012-03-15
申请号：US13320626
申请日：2010-05-21
申请人： Kenichi Tokuhiro , Kazuhito Hatoh , Takaiki Nomura , Tomohiro Kuroha , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura , Atsuo Okaichi , Norihiro Miyamura
发明人： Kenichi Tokuhiro , Kazuhito Hatoh , Takaiki Nomura , Tomohiro Kuroha , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura , Atsuo Okaichi , Norihiro Miyamura
IPC分类号： B01J19/08
CPC分类号： H01M8/0606 , C01B3/042 , H01M8/186 , H01M2250/10 , H01M2250/405 , Y02B90/14 , Y02B90/16 , Y02E60/364 , Y02E60/528 , Y02P70/56
摘要： A hydrogen generation system (2A) includes a hydrogen generation unit (201) that holds a first liquid containing water and that allows a part of the water contained in the first liquid to be decomposed into hydrogen and oxygen, and at least a part of the first liquid to be heated, by being irradiated with sunlight, a first heat exchanger (207) that cools the first liquid heated in the hydrogen generation unit (201) and heats the second liquid by heat exchange between the first liquid and the second liquid, and a mechanism (for example, a circulation line (204) and a pump (205)) that introduces the first liquid cooled in the first heat exchanger (207) into the hydrogen generation unit (201).
摘要翻译：氢生成系统（2A）包括氢生成单元（201），其保持含有水的第一液体，并且允许第一液体中包含的一部分水分解成氢和氧，并且至少一部分通过照射太阳光的第一待加热液体，冷却在氢气产生单元（201）中加热的第一液体并通过第一液体和第二液体之间的热交换来加热第二液体的第一热交换器（207）以及将在第一热交换器（207）中冷却的第一液体引入氢产生单元（201）的机构（例如循环管线（204）和泵205）。

17. 发明授权

US08951447B2 Optically pumped semiconductor and device using the same 有权
标题翻译：光泵浦半导体和器件使用相同
公开(公告)号：US08951447B2
公开(公告)日：2015-02-10
申请号：US13119117
申请日：2010-04-26
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
IPC分类号： H01B1/02 , B01J35/00 , B01J23/00 , B01J23/08 , B01J23/10 , B01J23/62 , C01B3/04 , C01B13/02 , C01G25/00 , C25B1/00
CPC分类号： B01J35/004 , B01J23/002 , B01J23/08 , B01J23/10 , B01J23/62 , B01J2523/00 , C01B3/042 , C01B13/0207 , C01G25/006 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2004/34 , C01P2006/40 , C25B1/003 , Y02E60/364 , B01J2523/25 , B01J2523/32 , B01J2523/48 , B01J2523/375 , B01J2523/33
摘要： The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-α, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and α denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a≦b≦c, conditions that 0.41727 nm≦a, b, c≦0.42716 nm and a/c≧0.98 are satisfied.
摘要翻译：根据本发明的光泵浦半导体是作为钙钛矿氧化物的半导体的光泵浦半导体。光泵浦半导体具有由通式BaZr1-xMxO3-α表示的组成，其中M表示选自三价元素中的至少一种元素，x表示大于0但小于0.8的数值，α表示氧缺乏是数值超过0但小于1.5的缺氧。光泵浦半导体具有立方晶，四方晶或正交晶体的晶体系。如果晶体系的晶格常数被称为a，b和c，条件是满足0.41727nm＆nlE; a，b，c＆nlE; 0.42716nm和a /c≥0.98的条件。

18. 发明申请

US20120285823A1 HYDROGEN GENERATION DEVICE 有权
标题翻译：氢气发生装置
公开(公告)号：US20120285823A1
公开(公告)日：2012-11-15
申请号：US13522855
申请日：2011-01-19
申请人： Takahiro Suzuki , Takaiki Nomura , Kazuhito Hatoh , Noboru Taniguchi , Tomohiro Kuroha , Kenichi Tokuhiro
发明人： Takahiro Suzuki , Takaiki Nomura , Kazuhito Hatoh , Noboru Taniguchi , Tomohiro Kuroha , Kenichi Tokuhiro
IPC分类号： C25B9/00 , C25B1/10
CPC分类号： C25B1/003 , C01B3/042 , C01B2203/066 , Y02E60/364 , Y02E60/368
摘要： A hydrogen generation device (100) of the present invention includes: a transparent substrate (1); a photocatalytic electrode (4) formed of a transparent conductive layer (2) and a photocatalytic layer (3) disposed on the transparent substrate (1); a counter electrode (8) connected electrically to the transparent conductive layer (2); a water-containing electrolyte solution layer provided between the photocatalytic electrode (3) and the counter electrode (8); a separator (6) that separates the electrolyte solution layer into a first electrolyte solution layer (5) in contact with the photocatalytic electrode (4) and a second electrolyte solution layer (7) in contact with the counter electrode (8); a first gas outlet (14) for discharging a gas generated in the first electrolyte solution layer (5); and a second gas outlet (15) for discharging a gas generated in the second electrolyte solution layer (7). The photocatalytic electrode (4) and the counter electrode (8) are arranged so that a surface of the photocatalytic layer (3) and a surface of the counter electrode (8) face each other. The separator (6) allows an electrolyte in the electrolyte solution layer to pass therethrough and prevents hydrogen gas and oxygen gas in the electrolyte solution layer from passing therethrough.
摘要翻译：本发明的氢产生装置（100）包括：透明基板（1）; 由透明导电层（2）和设置在透明基板（1）上的光催化层（3）形成的光催化电极（4）; 与所述透明导电层（2）电连接的对电极（8）; 设置在光催化剂电极（3）和对电极（8）之间的含水电解液层; 将电解质溶液层分离成与光催化剂电极（4）接触的第一电解质溶液层（5）和与反电极（8）接触的第二电解液层（7）的分离器（6）。用于排出在第一电解质溶液层（5）中产生的气体的第一气体出口（14）; 和用于排出在第二电解质溶液层（7）中产生的气体的第二气体出口（15）。光催化剂电极（4）和对电极（8）的配置使得光催化剂层（3）的表面和对置电极（8）的表面彼此面对。分离器（6）允许电解质溶液层中的电解质通过，防止电解质溶液层中的氢气和氧气通过。

19. 发明授权

US09157155B2 Photoelectrochemical cell and energy system using same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US09157155B2
公开(公告)日：2015-10-13
申请号：US13393107
申请日：2011-03-22
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
IPC分类号： C25B1/06 , B01J35/02 , C25B1/00 , C25B11/04 , B01J35/00 , H01M8/06
CPC分类号： C25B1/003 , B01J35/004 , C25B11/0442 , H01M8/0656 , Y02E60/366 , Y02E60/368 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and semiconductor layers (122, 123) disposed on the conductor (121); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with surfaces of the semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). A band edge level ECS of a conduction band, a band edge level EVS of a valence band, and a Fermi level EFS in a surface near-field region of the semiconductor layer, and a band edge level ECJ of a conduction band, a band edge level EVJ of a valence band, and a Fermi level EFJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, ECS−EFS>ECJ−EFJ, EFS−EVS −4.44 eV, and EVS
摘要翻译：光电化学电池（100）包括：包括导体（121）和设置在导体（121）上的半导体层（122,123）的半导体电极（120）; 与所述导体（121）电连接的对电极（130）; 与所述半导体层（123）和所述对电极（130）的表面接触的电解质（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。导带的带边缘电平ECS，价带的带边缘电平EVS和半导体层的表面近场区域中的费米能级EFS，以及导带的带边缘电平ECJ，带 ECS-EFS> ECJ-EFJ，EFS-EVS -4.44eV，EVS <-5.67eV。半导体层的表面近场区域中的费米能级EFS和具有导体的半导体层的结面近场区域中的费米能级EFJ相对于真空度满足-5.67eV

20. 发明申请

US20120276464A1 Photoelectrochemical Cell and Energy System Using Same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US20120276464A1
公开(公告)日：2012-11-01
申请号：US13502322
申请日：2010-11-04
申请人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
发明人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
IPC分类号： C25B11/04 , C25B1/02 , H01M8/06 , C25B9/00 , B82Y99/00
CPC分类号： C25B1/003 , C01B3/042 , H01M8/0606 , H01M14/005 , Y02E60/364 , Y02E60/366 , Y02E60/50 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
摘要翻译：光电化学电池（100）包括：包括导体（121），具有纳米管阵列结构的第一n型半导体层（122）和第二n型半导体层（123）的半导体电极（120）连接到导体（121）的对电极（130）; 与第二n型半导体层（123）和对电极（130）接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。相对于真空度，第二n型半导体层（123）中的导带和价带的带边缘电平分别高于导带和带隙的带边缘电平，第一n型半导体层（122），（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（123）的费米能级，（III）导体（121）的费米能级高于第一n型半导体层（122）的费米能级。

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