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11. 发明申请

US20150171129A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20150171129A1
公开(公告)日：2015-06-18
申请号：US14560037
申请日：2014-12-04
申请人： Katsuyuki Sakurano , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda , Yasukazu Nakatani , Hirofumi Watanabe
发明人： Katsuyuki Sakurano , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda , Yasukazu Nakatani , Hirofumi Watanabe
IPC分类号： H01L27/146 , H01L31/113
CPC分类号： H01L31/1136 , H01L27/14614 , H01L27/14623 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
摘要： A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.
摘要翻译：公开了半导体器件和制造半导体器件的方法。该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

12. 发明授权

US08785777B2 Actuator control device, and method of manufacturing circuit device in actuator control device 有权
标题翻译：执行器控制装置，以及在执行器控制装置中制造电路装置的方法
公开(公告)号：US08785777B2
公开(公告)日：2014-07-22
申请号：US12976001
申请日：2010-12-22
申请人： Daisuke Yasukawa , Hirofumi Watanabe , Kazuhiko Nakano , Kenji Kikuchi
发明人： Daisuke Yasukawa , Hirofumi Watanabe , Kazuhiko Nakano , Kenji Kikuchi
IPC分类号： H02G5/00
CPC分类号： B60T8/368 , B29C45/14065 , B29C45/14639 , B29C45/14836 , B29C2045/14131 , B60T8/441 , H02M7/003
摘要： An actuator control device includes a circuit device that is resin-molded by a plurality of metal molds including at least one movable metal mold to include a first bus bar and a second bus bar. The first bus bar and the second bus bar each include a flat plate-like portion that includes two main flat-face portions having large surface areas, and two sub flat-face portions that are adjacent to the main flat-face portions and have smaller surface areas than the surface areas of the main flat-face portions. One of the main flat-face portions of the first bus bar faces one of the main flat-face portions of the second bus bar. The facing direction differs from the mold release direction of the movable metal mold.
摘要翻译：致动器控制装置包括由包括至少一个活动金属模具的多个金属模具树脂模塑的电路装置，以包括第一母线和第二母线。第一母线和第二母线各自包括平板状部分，其包括具有大表面积的两个主平面部分和与主平面部分相邻的两个副平面部分，并且具有较小的表面积大于主平面部分的表面积。第一汇流条的主平面部分之一面向第二汇流条的主平面部分之一。面向的方向与可动金属模具的脱模方向不同。

13. 发明申请

US20130234277A1 SEMICONDUCTOR DEVICE AND IMAGING APPARATUS 有权
标题翻译：半导体器件和成像装置
公开(公告)号：US20130234277A1
公开(公告)日：2013-09-12
申请号：US13793445
申请日：2013-03-11
申请人： Takaaki Negoro , Hirofumi Watanabe , Yutaka Hayashi , Toshitaka Ota , Yasushi Nagamune
发明人： Takaaki Negoro , Hirofumi Watanabe , Yutaka Hayashi , Toshitaka Ota , Yasushi Nagamune
IPC分类号： H01L27/146 , H01L29/73
CPC分类号： H01L27/14681 , H01L27/14683 , H01L29/73 , H01L29/739 , H01L31/1105
摘要： The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region. The electrode is insulated from the first to third semiconductor regions, and current gain is variable through application of voltage to the electrode.
摘要翻译：本发明涉及一种半导体器件，其具有从半导体衬底表面沿深度方向依次形成的发射极，基极和集电极的垂直晶体管双极结构。半导体器件包括从半导体衬底表面嵌入内部并由氧化物膜绝缘的电极。在基板的表面中，从第一导电型第一半导体区域，第二导电型第二半导体区域和第一导电型第三半导体区域的表面侧配置在半导体器件区域被电极围绕并且沿着电极，氧化膜插入其间，位于第一半导体区域下方的第二半导体区域，位于第二半导体区域下方的第三半导体区域。电极与第一至第三半导体区域绝缘，电流增益可通过向电极施加电压而变化。

14. 发明申请

US20120270026A1 PHENOLIC RESIN FOAMED PLATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：酚醛树脂泡沫板及其生产方法
公开(公告)号：US20120270026A1
公开(公告)日：2012-10-25
申请号：US13516523
申请日：2010-12-15
申请人： Hisashi Mihori , Hirofumi Watanabe , Yuki Saito
发明人： Hisashi Mihori , Hirofumi Watanabe , Yuki Saito
IPC分类号： B32B27/42 , B29C44/06 , B32B5/18
CPC分类号： C08J9/141 , B29C44/24 , B29C44/321 , B29C44/326 , B29C44/468 , B32B5/32 , B32B2266/0271 , C08G14/08 , C08J2361/24 , C08L61/34
摘要： A phenolic resin foamed plate having a thickness of 50 mm or more, in which when the phenolic resin foamed plate is sliced from one main surface of the phenolic resin foamed plate along the main surface in a thickness direction at 5 mm intervals to produce n pieces, which are designated as Q1 to Qn in order from the main surface side, where average densities of Q1 to Qn are dq1 to dqn, respectively, the ratio (dqmin/dqave) of a minimum value dqmin of dq2 to dq(n-1) to an average value dqave of dq2 to dq(n-1) is 0.91≦dqmin/dqave≦0.98, and when a density distribution line is obtained, there exists a straight line parallel with the axis of abscissas that intersects the density distribution line at four points. The phenolic resin foamed plate exhibiting practically sufficient compressive strength and thermal conductivity even when the product thickness is increased.
摘要翻译：一种厚度为50mm以上的酚醛树脂发泡板，其中当酚醛树脂发泡板沿酚醛树脂发泡板的主表面沿厚度方向以5mm间隔从主表面切片以产生n个片，其中从主面侧开始按照Q1〜Qn的平均密度dq1〜dqn分别指定为Q1〜Qn，dq2的最小值dqmin与dq（n-1）的比（dqmin / dqave））至dq2至dq（n-1）的平均值dqave为0.91＆nlE; dqmin / dqave＆nlE; 0.98，并且当获得密度分布线时，存在与横坐标轴平行的直线与密度分布相交在四点。即使产品厚度增加，酚醛树脂发泡板也具有足够的抗压强度和导热性。

15. 发明授权

US08174319B2 Amplifier 失效
标题翻译：放大器
公开(公告)号：US08174319B2
公开(公告)日：2012-05-08
申请号：US13004336
申请日：2011-01-11
申请人： Hideyuki Aota , Hirofumi Watanabe
发明人： Hideyuki Aota , Hirofumi Watanabe
IPC分类号： H03F3/16
CPC分类号： H03F3/345 , G05F1/56
摘要： An amplifier includes a first amplifier comprising an N-type field-effect transistor receiving a reference voltage at a gate, a P-type field-effect transistor connected between a drain of the N-type field-effect transistor and a power supply voltage line, and a constant current source connected between a source of the N-type field-effect transistor and a ground, to output a voltage from a connection of the drain of the N-type and P-type field-effect transistors; a second amplifier comprising a resistance and P-type field-effect transistors connected in series between the power supply voltage line and the ground to receive the voltage output from the first amplifier at their gate, and outputting a voltage from a connection of the P-type field-effect transistor and the resistance; and a switch between an output of the first amplifier and the power supply voltage line and comprising an N-type field-effect transistor receiving a reference voltage at a gate.
摘要翻译：放大器包括：第一放大器，包括在栅极接收参考电压的N型场效应晶体管，连接在N型场效应晶体管的漏极和电源电压线之间的P型场效应晶体管以及连接在N型场效应晶体管的源极和地之间的恒流源，以从N型和P型场效应晶体管的漏极的连接输出电压; 第二放大器，包括串联连接在电源电压线和地之间的电阻和P型场效应晶体管，以接收在其栅极处从第一放大器输出的电压，并输出来自P- 型场效应晶体管和电阻; 以及第一放大器的输出和电源电压线之间的开关，并且包括在栅极处接收参考电压的N型场效应晶体管。

16. 发明授权

US08007027B2 Door operating apparatus, electromagnetic clutch, and coupling mechanism 失效
标题翻译：门操作装置，电磁离合器和联接机构
公开(公告)号：US08007027B2
公开(公告)日：2011-08-30
申请号：US12389208
申请日：2009-02-19
申请人： Hirofumi Watanabe , Takuya Kakumae
发明人： Hirofumi Watanabe , Takuya Kakumae
IPC分类号： B60J5/00
CPC分类号： F16D27/112 , E05F11/50 , E05F15/603 , E05F15/63 , E05Y2201/216 , E05Y2201/246 , E05Y2201/462 , E05Y2800/00 , E05Y2800/678 , E05Y2900/546 , G01D5/145 , G01P3/487 , G01P13/04
摘要： A door operating apparatus includes a motor bracket that covers a driving shaft of a driving motor; an output shaft that is disposed from the motor bracket toward the supporting bracket so as to be orthogonal to an extending direction of the driving shaft; a first rotational element that is linked with the driving shaft, and disposed on the output shaft; a second rotational element that is linked with a door operating mechanism, and disposed between the first rotational element and the supporting bracket on the output shaft; and a clutch unit including a clutch driving section that supports a rotation of the output shaft. When the first rotational element and the second rotational element are engaged by driving of the clutch driving section, the door operating mechanism is actuated by the driving force.
摘要翻译：门操作装置包括覆盖驱动电动机的驱动轴的电动机支架; 输出轴，其从所述马达支架朝向所述支撑托架设置成与所述驱动轴的延伸方向正交; 第一旋转元件，其与驱动轴连接并设置在输出轴上; 第二旋转元件，其与门操作机构连接，并且设置在输出轴上的第一旋转元件和支撑托架之间; 以及离合器单元，其包括支撑输出轴的旋转的离合器驱动部。当第一旋转元件和第二旋转元件通过离合器驱动部的驱动而接合时，门操作机构由驱动力驱动。

17. 发明申请

US20110155414A1 Actuator Control Device, and Method of Manufacturing Circuit Device In Actuator Control Device 有权
标题翻译：执行机构控制装置及其制造方法
公开(公告)号：US20110155414A1
公开(公告)日：2011-06-30
申请号：US12976001
申请日：2010-12-22
申请人： Daisuke YASUKAWA , Hirofumi Watanabe , Kazuhiko Nakano , Kenji Kikuchi
发明人： Daisuke YASUKAWA , Hirofumi Watanabe , Kazuhiko Nakano , Kenji Kikuchi
IPC分类号： H02G5/00 , B29C65/42
CPC分类号： B60T8/368 , B29C45/14065 , B29C45/14639 , B29C45/14836 , B29C2045/14131 , B60T8/441 , H02M7/003
摘要： An actuator control device includes a circuit device that is resin-molded by a plurality of metal molds including at least one movable metal mold to include a first bus bar and a second bus bar. The first bus bar and the second bus bar each include a flat plate-like portion that includes two main flat-face portions having large surface areas, and two sub flat-face portions that are adjacent to the main flat-face portions and have smaller surface areas than the surface areas of the main flat-face portions. One of the main flat-face portions of the first bus bar faces one of the main flat-face portions of the second bus bar. The facing direction differs from the mold release direction of the movable metal mold.
摘要翻译：致动器控制装置包括由包括至少一个活动金属模具的多个金属模具树脂模塑的电路装置，以包括第一母线和第二母线。第一母线和第二母线各自包括平板状部分，其包括具有大表面积的两个主平面部分和与主平面部分相邻的两个副平面部分，并且具有较小的表面积大于主平面部分的表面积。第一汇流条的主平面部分之一面向第二汇流条的主平面部分之一。面向的方向与可动金属模具的脱模方向不同。

18. 发明授权

US07845706B2 Electric actuator of automotive pivotal door 有权
标题翻译：汽车枢纽门电动执行机构
公开(公告)号：US07845706B2
公开(公告)日：2010-12-07
申请号：US11889567
申请日：2007-08-14
申请人： Hirofumi Watanabe , Takuya Kakumae
发明人： Hirofumi Watanabe , Takuya Kakumae
IPC分类号： B60J5/10
CPC分类号： E05F15/63 , E05Y2201/216 , E05Y2201/246 , E05Y2201/462 , E05Y2900/546 , E05Y2900/548
摘要： A case is mounted to one of a motor vehicle and a pivotal door and has therein a gear receiving space. An electric motor is mounted to the case. A speed reduction mechanism is installed in the gear receiving space of the case and driven by the electric motor. An output gear is rotatably received in the gear receiving space of the case and driven by the speed reduction mechanism. An output arm is placed above the case and connected to the output gear through an output shaft that passes through an upper wall portion of the case. A connecting rod has one end pivotally connected to the output arm and the other end pivotally connected to the other of the motor vehicle and the pivotal door. The connecting rod is arranged beside the case in a manner to avoid overlapping thereof with the case in a direction that is perpendicular to a direction in which the connecting rod is moved by the output arm.
摘要翻译：壳体安装在机动车辆和枢转门中的一个上并且具有齿轮容纳空间。电动机安装在壳体上。减速机构安装在壳体的齿轮容纳空间中，由电动机驱动。输出齿轮可旋转地容纳在壳体的齿轮容纳空间中并由减速机构驱动。输出臂放置在壳体上方并通过输出轴连接到输出齿轮，该输出轴穿过壳体的上壁部分。连杆的一端可枢转地连接到输出臂，另一端枢转地连接到机动车辆和枢转门的另一端。连接杆配置在壳体的旁边，以避免与壳体在垂直于连杆由输出臂移动的方向的方向重叠。

19. 发明授权

US07735375B2 Stress-distribution detecting semiconductor package group and detection method of stress distribution in semiconductor package using the same 失效
标题翻译：应力分布检测半导体封装组及应用分布检测方法采用半导体封装
公开(公告)号：US07735375B2
公开(公告)日：2010-06-15
申请号：US12201350
申请日：2008-08-29
申请人： Naohiro Ueda , Hirofumi Watanabe
发明人： Naohiro Ueda , Hirofumi Watanabe
IPC分类号： G01B7/16
CPC分类号： G01L1/16 , G01L1/2293 , H01L2224/05554 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2924/1305 , H01L2924/13091 , H01L2924/15311 , H01L2924/00014 , H01L2924/00
摘要： A disclosed stress-distribution detecting semiconductor package group includes multiple stress-distribution detecting semiconductor packages each formed by resin-encapsulating a stress detecting semiconductor chip of the same size using an identical resin encapsulation structure. Each stress detecting semiconductor chip includes a piezoelectric element for stress detection and at least two electrode pads electrically connected to the piezoelectric element to measure an electrical property of the piezoelectric element. The piezoelectric elements of the stress detecting semiconductor chips are respectively disposed on the corresponding stress detecting semiconductor chips to be located at different positions from one another when superimposed on a single imaginary semiconductor chip plane having the same plane size as that of the stress detecting semiconductor chips.
摘要翻译：所公开的应力分布检测半导体封装组包括通过使用相同的树脂封装结构树脂密封相同尺寸的应力检测半导体芯片而形成的多个应力分布检测半导体封装。每个应力检测半导体芯片包括用于应力检测的压电元件和与压电元件电连接以测量压电元件的电性能的至少两个电极焊盘。应力检测半导体芯片的压电元件分别设置在相应的应力检测半导体芯片上，以在叠加在具有与应力检测半导体芯片相同的平面尺寸的单个虚拟半导体芯片平面上时彼此不同的位置。

20. 发明授权

US07615844B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07615844B2
公开(公告)日：2009-11-10
申请号：US12003477
申请日：2007-12-26
申请人： Hirofumi Watanabe
发明人： Hirofumi Watanabe
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01C7/006 , H01C17/075 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided that includes: a base insulating film; a metal thin-film resistor that is provided on the base insulating film; a lower-layer insulating film that is formed under the base insulating film; and a wiring pattern that is formed on the lower-layer insulating film. In this semiconductor device, the base insulating film is formed on the lower-layer insulating film and the wiring pattern, and connecting holes are formed in the base insulating film located on the wiring patterns. The metal thin-film resistor has at least two belt-like portions and a return portion that continues to the belt-like portions. The belt-like portions are located at a distance from the region on the wiring pattern. The return portion connects at least two belt-like portions in a position at a distance from the region on the wiring pattern. The return portion is formed in a connecting hole via the region on the wiring pattern.
摘要翻译：提供一种半导体器件，其包括：基底绝缘膜; 设置在基底绝缘膜上的金属薄膜电阻器; 形成在基底绝缘膜下面的下层绝缘膜; 以及形成在下层绝缘膜上的布线图案。在该半导体器件中，基底绝缘膜形成在下层绝缘膜和布线图案上，并且在位于布线图案上的基底绝缘膜中形成连接孔。金属薄膜电阻器具有至少两个带状部分和连续到带状部分的返回部分。带状部分位于布线图案上的区域一定距离处。返回部分在与布线图案上的区域相距一定距离的位置处连接至少两个带状部分。返回部分经由布线图案上的区域形成在连接孔中。

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