会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 18. 发明申请
    • Polyimide film and process for its production
    • 聚酰亚胺薄膜及其生产工艺
    • US20070100127A1
    • 2007-05-03
    • US10530414
    • 2003-03-31
    • Toyoaki IshiwataTsutomu NakamuraKazunori KojimaToru Sawaki
    • Toyoaki IshiwataTsutomu NakamuraKazunori KojimaToru Sawaki
    • C08G69/08
    • C08J5/18B29C41/003B29D7/01B29K2079/08C08G73/1042C08G73/1082C08J2379/08H05K1/0346
    • An oriented polyimide film with a high Young's modulus, satisfactory moist heat resistance and low moisture absorptivity, and a process for its production. The polyimide film is composed mainly of a pyromellitic acid component, with a p-phenylenediamine component at between 30 mole percent and 99 mole percent and a diamine component represented by the structural unit of the following formula (II) at between 1 mole percent and 70 mole percent: (wherein ArIIa and ArIIb are each independently a C6-20 aromatic group optionally having an non-reactive substituent, and X in structural unit (II) consists of at least one group selected from among —O—, —O—ArIIc—O—, —SO2— and —O—ArIId—O—ArIIe—O—), and the polyimide film is characterized by having two perpendicular directions in which the in-plane Young's modulus is 3 GPa or greater, and having a moisture absorptivity of no greater than 3.3 wt % at 72% RH, 25° C.
    • 具有高杨氏模量,令人满意的耐湿热性和低吸湿性的取向聚酰亚胺膜及其制造方法。 聚酰亚胺膜主要由均苯四酸酸组分组成,对苯二胺组分为30摩尔%至99摩尔%,由下式(II)的结构单元表示的二胺组分的摩尔比为1摩尔%至70摩尔% 摩尔百分数:(其中Ar IIa和Ar IIb各自独立地为任选具有非反应性取代基的C6-20芳族基团,结构单元(II)中的X由 的至少一个选自-O - , - O-Ar II - , - SO 2 - 和-O-Ar IId的基团, 其中,所述聚酰亚胺膜的特征在于,其中所述平面内杨氏模量为3GPa以上,并且具有吸湿性 在72%RH,25℃下不大于3.3重量%
    • 20. 发明申请
    • Vacuum processing apparatus
    • 真空加工设备
    • US20070068628A1
    • 2007-03-29
    • US11362868
    • 2006-02-28
    • Takeo UchinoTsutomu NakamuraMichiaki Kobayashi
    • Takeo UchinoTsutomu NakamuraMichiaki Kobayashi
    • H01L21/306C23C16/00
    • H01L21/67769H01L21/67017H01L21/67389H01L21/67775
    • A vacuum processing apparatus having an improved wafer processing efficiency and an improved working efficiency is provided. The vacuum processing apparatus includes a vacuum container in which a specimen is processed with plasma generated from a processing gas supplied to the vacuum container; a transfer container through which the specimen processed in the vacuum container is transferred, the transfer container being coupled to the vacuum container under ambient pressure; a blower for generating an ambient gas flow in the transfer container and an outlet disposed on the transfer container; a storage container for storing the specimen processed in the vacuum container, the storage container being disposed in the ambient gas flow in the transfer container; and an exhauster for exhausting a gas in the storage container.
    • 提供了一种具有改进的晶片处理效率和提高的工作效率的真空处理设备。 真空处理装置包括:真空容器,其中用从供给到真空容器的处理气体产生的等离子体处理试样; 在真空容器中处理的试样被转移通过的转移容器,转印容器在环境压力下连接到真空容器; 用于在所述转移容器中产生环境气流的鼓风机和设置在所述转移容器上的出口; 储存容器,用于储存处理在真空容器中的试样,该储存容器设置在转移容器中的环境气流中; 以及用于排出储存容器中的气体的排气装置。