专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20110227132A1 FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管
公开(公告)号：US20110227132A1
公开(公告)日：2011-09-22
申请号：US13118945
申请日：2011-05-31
申请人： Yoshiharu ANDA , Hidetoshi ISHIDA , Tetsuzo UEDA
发明人： Yoshiharu ANDA , Hidetoshi ISHIDA , Tetsuzo UEDA
IPC分类号： H01L29/205
CPC分类号： H01L29/42316 , H01L29/2003 , H01L29/4236 , H01L29/7787
摘要： The present invention has as an object to provide a FET having low on-resistance. The FET according to the present invention includes: first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a higher band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; a fourth nitride semiconductor layer formed on the third nitride semiconductor layer and having a higher band gap energy than the third nitride semiconductor layer. A channel is formed in a heterojunction interface between the first nitride semiconductor layer and the second nitride semiconductor layer.
摘要翻译：本发明的目的是提供一种具有低导通电阻的FET。根据本发明的FET包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更高的带隙能量的第二氮化物半导体层; 形成在所述第二氮化物半导体层上的第三氮化物半导体层; 形成在所述第三氮化物半导体层上并且具有比所述第三氮化物半导体层更高的带隙能量的第四氮化物半导体层。在第一氮化物半导体层和第二氮化物半导体层之间的异质结界面形成沟道。

12. 发明申请

US20090261362A1 4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLYTYPE SUBSTRATE 审中-公开
标题翻译： 4H-多晶型氮化镓基半导体器件在4H-多晶基片上
公开(公告)号：US20090261362A1
公开(公告)日：2009-10-22
申请号：US12496271
申请日：2009-07-01
申请人： Tetsuzo UEDA , Tsunenobu Kimoto , Hiroyuki Matsunami , Jun Suda , Norio Onojima
发明人： Tetsuzo UEDA , Tsunenobu Kimoto , Hiroyuki Matsunami , Jun Suda , Norio Onojima
IPC分类号： H01L33/00
CPC分类号： H01L21/02082 , H01L21/02378 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/18 , H01L33/32
摘要： 4H—InGaAlN alloy based optoelectronic and electronic devices on non-polar face are formed on 4H—AlN or 4H—AlGaN on (11-20) a-face 4H—SiC substrates. Typically, non polar 4H—AlN is grown on 4H—SiC (11-20) by molecular beam epitaxy (MBE). Subsequently, III-V nitride device layers are grown by metal organic chemical vapor deposition (MOCVD) with 4H-polytype for all of the layers. The non-polar device does not contain any built-in electric field due to the spontaneous and piezoelectric polarization. The optoelectronic devices on the non-polar face exhibits higher emission efficiency with shorter emission wavelength because the electrons and holes are not spatially separated in the quantum well. Vertical device configuration for lasers and light emitting diodes (LEDs) using conductive 4H—AlGaN interlayer on conductive 4H—SiC substrates makes the chip size and series resistance smaller. The elimination of such electric field also improves the performance of high speed and high power transistors. The details of the epitaxial growth s and the processing procedures for the non-polar III-V nitride devices on the non-polar SiC substrates are also disclosed.
摘要翻译：在（11-20）a面4H-SiC衬底上的4H-AlN或4H-AlGaN上形成4H-InGaAlN合金基非极性面上的光电子和电子器件。通常，非极性4H-AlN通过分子束外延（MBE）在4H-SiC（11-20）上生长。随后，通过用于所有层的4H-多型金属有机化学气相沉积（MOCVD）生长III-V族氮化物器件层。由于自发和压电极化，非极性器件不包含任何内置的电场。由于电子和空穴在量子阱中没有空间分离，非极性面上的光电器件表现出较短的发射波长的发射效率。在导电4H-SiC衬底上使用导电4H-AlGaN夹层的激光器和发光二极管（LED）的垂直器件配置使芯片尺寸和串联电阻更小。这种电场的消除也提高了高速和高功率晶体管的性能。还公开了非极性SiC衬底上的非极性III-V族氮化物器件的外延生长细节和处理步骤。

13. 发明申请

US20080121896A1 Nitride semiconductor material, semiconductor element, and Manufacturing method thereof 有权
标题翻译：氮化物半导体材料，半导体元件及其制造方法
公开(公告)号：US20080121896A1
公开(公告)日：2008-05-29
申请号：US11738655
申请日：2007-04-23
申请人： Toshiyuki TAKIZAWA , Tetsuzo UEDA
发明人： Toshiyuki TAKIZAWA , Tetsuzo UEDA
IPC分类号： H01L29/20 , H01L21/205
CPC分类号： H01L29/2003 , H01L21/0217 , H01L21/02271 , H01L21/0254 , H01L21/02609 , H01L21/02664 , H01L21/3185 , H01L29/045 , H01L29/24 , H01L29/267 , H01L29/7787
摘要： The nitride semiconductor material according to the present invention includes a group III nitride semiconductor and a group IV nitride formed on the group III nitride semiconductor, where an interface between the group III nitride semiconductor and the group IV nitride has a regular atomic arrangement. Moreover, an arrangement of nitrogen atoms of the group IV nitride in the interface and an arrangement of group III atoms of the group III nitride semiconductor in the interface may be substantially identical.
摘要翻译：根据本发明的氮化物半导体材料包括在III族氮化物半导体上形成的III族氮化物半导体和IV族氮化物，其中III族氮化物半导体和IV族氮化物之间的界面具有规则的原子排列。此外，界面中IV族氮化物的氮原子排列和III族氮化物半导体的III族原子在界面中的布置可以是基本相同的。

14. 发明申请

US20090101920A1 WHITE LIGHT EMITTING ELEMENT AND WHITE LIGHT SOURCE 有权
标题翻译：白光发光元件和白光源
公开(公告)号：US20090101920A1
公开(公告)日：2009-04-23
申请号：US12341593
申请日：2008-12-22
申请人： Tetsuzo UEDA
发明人： Tetsuzo UEDA
IPC分类号： H01L33/00 , G11C19/00 , G11C19/08
CPC分类号： H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A white light source has an excitation light source and a white light emitting element provided at a position which allows the transmission of light from the excitation light source to generate white light through irradiation with the light from the excitation light source. The white light emitting element has a sapphire substrate made of sapphire or the like which transmits visible light, an InGaAlN semiconductor layer formed on a surface of the sapphire substrate to emit red light through irradiation with visible light, and a fluorescent layer formed on the surface opposite to the surface provided with the semiconductor layer to emit yellow light or green light through irradiation with visible light.
摘要翻译：白光源具有激发光源和设置在允许来自激发光源的光的透射通过照射来自激发光源的光而产生白光的位置的白色发光元件。白色发光元件具有由透过可见光的蓝宝石等制成的蓝宝石衬底，形成在蓝宝石衬底的表面上的InGaAlN半导体层通过可见光照射发出红光，并且在表面上形成荧光层与设置有半导体层的表面相对，以通过可见光照射发射黄光或绿光。

15. 发明申请

US20090045431A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A CURRENT-BLOCKING LAYER FORMED BETWEEN A SEMICONDUCTOR MULTILAYER FILM AND A METAL FILM AND LOCATED AT THE PERIPHERY. , METHOD FOR FABRICATING THE SAME AND METHOD FOR BONDING THE SAME 审中-公开
标题翻译：具有在半导体多层膜和金属膜之间形成的电流阻挡层并位于外围位置的半导体发光器件。
公开(公告)号：US20090045431A1
公开(公告)日：2009-02-19
申请号：US12169441
申请日：2008-07-08
申请人： Tetsuzo UEDA , Masaaki Yuri
发明人： Tetsuzo UEDA , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/387 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/14
摘要： A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 μm is formed, using an Au layer in the n-side electrode as an underlying layer.
摘要翻译：发光器件包括具有至少两个具有不同导电类型的半导体层的元件结构。在元件结构上形成ITO的透明p侧电极。在p侧电极的区域上形成接合焊盘。在与p侧电极相反的元件结构的表面上形成由Ti / Au构成的n侧电极。使用n侧电极中的Au层作为下层，形成厚度为50μm左右的由镀金制成的金属膜。

16. 发明申请

US20080217625A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20080217625A1
公开(公告)日：2008-09-11
申请号：US12041825
申请日：2008-03-04
申请人： Masayuki KURODA , Tetsuzo UEDA
发明人： Masayuki KURODA , Tetsuzo UEDA
IPC分类号： H01L29/778 , H01L21/205
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/41766 , H01L29/66462
摘要： It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type Al0.25Ga0.75N layer, a sapphire substrate, and a buffer layer. A main surface of the n-type Al0.25Ga0.75N layer is on (0001) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type Al0.25Ga0.75N layer, and the sides of the concaves are on non-polar surfaces such as (11-20) plane or (1-100) plane.
摘要翻译：本发明的目的是通过降低势垒高度来提供具有低寄生电阻的氮化物半导体器件，以降低半导体和金属界面处的接触电阻。氮化物半导体器件包括GaN层，器件隔离层，欧姆电极，n型Al 0.25 N Ga 0.75 N层，蓝宝石衬底和缓冲层层。 n型Al 0.25 N 0.75 N N层的主表面在（0001）面上作为主表面，并且凹面以表格形式布置在表面上。欧姆电极接触n型Al 0.25 Ga 0.75 N层的凹部的侧面，并且凹部的侧面在非极性表面上，例如（ 11-20）平面或（1-100）面。

17. 发明申请

US20080112448A1 Nitride semiconductor laser diode 有权
标题翻译：氮化物半导体激光二极管
公开(公告)号：US20080112448A1
公开(公告)日：2008-05-15
申请号：US11979877
申请日：2007-11-09
申请人： Tetsuzo UEDA , Daisuke UEDA
发明人： Tetsuzo UEDA , Daisuke UEDA
IPC分类号： H01S5/323
CPC分类号： H01S5/32341 , H01S5/021 , H01S5/2201
摘要： A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active layer, each of the plurality of semiconductor layers being made of group III nitride. The semiconductor has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleaved facet, the cleaved facet forming a facet mirror.
摘要翻译：氮化物半导体激光二极管包括：由主表面的平面取向为{100}面的由硅制成的衬底; 以及半导体，其包括形成在所述基板上并包括有源层的多个半导体层，所述多个半导体层中的每一个由III族氮化物制成。半导体具有平行于{011}平面的平面，该平面是作为切割面的硅的平面取向，切割面形成小平面镜。

18. 发明申请

US20080008220A1 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20080008220A1
公开(公告)日：2008-01-10
申请号：US11850603
申请日：2007-09-05
申请人： Tetsuzo UEDA , Masaaki YURI
发明人： Tetsuzo UEDA , Masaaki YURI
IPC分类号： H01S5/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3214 , H01S2304/12 , Y10S438/973 , Y10S438/977
摘要： It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
摘要翻译：本发明的目的是提供一种具有高产量的半导体激光器件，其中在外延生长层中产生的夹克被抑制，并且其制造方法，半导体激光器件包括GaN衬底1，型GaN层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 p型GaN引导层8，SiO 2阻挡层9，作为透明电极的Ni / ITO包层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12.SiO 2阻挡层9形成在InGaN多量子阱有源层5上方以具有开口。 Ni / ITO包层电极10形成在开口内部，对于来自InGaN多量子阱有源层的光是透明的，并且用作覆层。

19. 发明申请

US20100264517A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20100264517A1
公开(公告)日：2010-10-21
申请号：US12823325
申请日：2010-06-25
申请人： Masayuki KURODA , Tetsuzo UEDA
发明人： Masayuki KURODA , Tetsuzo UEDA
IPC分类号： H01L29/12
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/41766 , H01L29/66462
摘要： It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type Al0.25Ga0.75N layer, a sapphire substrate, and a buffer layer. A main surface of the n-type Al0.25Ga0.75N layer is on (0 0 0 1) plane as a main surface, and concaves are arranged in a checkerboard to pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type Al0.25Ga0.75N layer, and the sides of the concaves are on non-polar surfaces such as (1 1 −2 0) plane or (1 −1 0 0) plane.
摘要翻译：本发明的目的是通过降低势垒高度来提供具有低寄生电阻的氮化物半导体器件，以降低半导体和金属界面处的接触电阻。氮化物半导体器件包括GaN层，器件隔离层，欧姆电极，n型Al0.25Ga0.75N层，蓝宝石衬底和缓冲层。 n型Al0.25Ga0.75N层的主表面在（0 0 0 1）平面上作为主表面，并且凹槽布置在棋盘上以在表面上图案化。欧姆电极接触n型Al0.25Ga0.75N层的凹面的侧面，凹面的两侧在非极性表面上，例如（11-2 -2）面或（1-1000））飞机。

20. 发明申请

US20090261372A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090261372A1
公开(公告)日：2009-10-22
申请号：US12490200
申请日：2009-06-23
申请人： Tetsuzo UEDA
发明人： Tetsuzo UEDA
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/05111 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05169 , H01L2224/05568 , H01L2224/05644 , H01L2224/14 , H01L2924/00014
摘要： A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material containing a YAG fluorescent material. The red light emitting layer is made of, e.g., undoped In0.4Ga0.6N having a forbidden band width of 1.9 eV and formed on a p-type semiconductor layer to have a configuration consisting of a plurality of mutually spaced-apart islands.
摘要翻译：半导体发光器件由蓝色发光二极管，蓝色发光二极管外延生长的红色发光层和含有YAG荧光材料的绝缘材料构成。红色发光层由例如禁止带宽为1.9eV的未掺杂的In0.4Ga0.6N制成，并形成在p型半导体层上以具有由多个相互间隔开的岛状构成的结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式