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    • 13. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US06937068B2
    • 2005-08-30
    • US10642138
    • 2003-08-18
    • Michiaki NakayamaMasato HamamotoKazutaka MoriSatoru Isomura
    • Michiaki NakayamaMasato HamamotoKazutaka MoriSatoru Isomura
    • H01L27/092H01L27/11H01L27/04
    • H01L27/1104H01L27/0921H01L27/0928
    • An integrated circuit having a CMOS circuit constituted by electrically connecting an n-type well 2, in which p-channel transistor Tp of the CMOS circuit is set, with a supply line Vdd through switching transistor Tps, and electrically connecting a p-type well 3, in which n-channel transistor Tn of the CMOS circuit is set, with supply line Vss through switching transistor Tns. Thermal runaway due to leakage current can be controlled by turning off switching transistors Tps and Tns and supplying potentials suitable for a test to the n-type well 2 and the p-type well 3 from an external unit when the integrated circuit is being tested. Fluctuations of the latch-up phenomenon and operation speed can be prevented by turning on switching transistors Tps and Tns and setting the n-type well 2 and the p-type well 3 to the voltages Vdd and Vss, respectively.
    • 具有CMOS电路的集成电路,其通过将n型阱2(其中CMOS电路的p沟道晶体管Tp被置位)与通过开关晶体管Tps的电源线Vdd电连接而构成,并且电连接p型阱 如图3所示,其中CMOS电路的n沟道晶体管Tn被设置,电源线Vss通过开关晶体管Tns。 当集成电路被测试时,可以通过关断开关晶体管Tps和Tns并从外部单元向n型阱2和p型阱3提供适合于测试的电位来控制由于泄漏电流引起的热失控。 通过接通开关晶体管Tps和Tns并分别将n型阱2和p型阱3分别设置为电压Vdd和Vss可以防止闩锁现象和操作速度的波动。
    • 15. 发明授权
    • Design method of semiconductor device
    • 半导体器件的设计方法
    • US06760895B2
    • 2004-07-06
    • US10147991
    • 2002-05-20
    • Yuko ItoSatoru Isomura
    • Yuko ItoSatoru Isomura
    • G06F945
    • G06F17/5077G06F17/5036
    • A semiconductor device design method useful for the design of microprocessor, ASIC, and high-speed high-performance LSI is intended to enhance the accuracy of delay calculation and crosstalk noise calculation, and enhance the accuracy of assessment of delay variation caused by crosstalk and checking of malfunctioning caused by crosstalk. The method calculates the delay by using the total capacitance in consideration of the actual load after the layout and wiring, carries out the layout, wiring and modification of wiring repeatedly until targeted in-cycle transfer becomes attainable, calculates the delay by using the total capacitance in consideration of the actual load and crosstalk, carries out the modification of wiring repeatedly until targeted in-cycle transfer becomes attainable, calculates the crosstalk noise by using the total capacitance and coupling capacitance in consideration of the actual load, carries out the modification of wiring repeatedly until malfunctioning subsides, and uses data after the final layout and wiring for mask data.
    • 用于微处理器,ASIC和高速高性能LSI设计的半导体器件设计方法旨在提高延迟计算和串扰噪声计算的精度,并提高串扰和检查引起的延迟变化评估的准确性 由串扰引起的故障。 该方法通过考虑布线和布线后的实际负载,使用总电容来计算延迟,重复布线,布线和修改布线,直到目标周期内传输达到目标,通过使用总电容计算延迟 考虑到实际负载和串扰,反复进行布线修改,直到目标周期内传输成为可能,考虑到实际负载,通过使用总电容和耦合电容来计算串扰噪声,执行布线改造 重复直到故障消除,并在最终布局和掩模数据接线后使用数据。
    • 18. 发明授权
    • Signal transmit-receive device, circuit, and loopback test method
    • 信号发射接收设备,电路和环回测试方法
    • US07216269B2
    • 2007-05-08
    • US10309886
    • 2002-12-05
    • Takashige BabaTatsuya SaitoHiroki YamashitaYusuke TakeuchiSatoru Isomura
    • Takashige BabaTatsuya SaitoHiroki YamashitaYusuke TakeuchiSatoru Isomura
    • G01R31/28
    • H04B10/035H04B10/071H04L1/243
    • A signal transmit-receive device of the invention reduces the number of high-speed signal lines required for connecting a transmitting circuit group and a receiving circuit group, and for running a loopback test on a signal transmit-receive device. The loopback test circuit uses an error detecting circuit, a test signal producing circuit, and a wiring for transmitting error information. The error detecting circuit compares a test signal pattern defined in advance by a first communication device and a received signal pattern. The test signal producing circuit produces the test signal pattern based on error information. If an error is detected, the error signal is transmitted to the test signal producing circuit through the wiring. The test signal producing circuit produces a predetermined test signal pattern if the error signal DE has an L level; upon receiving H level, it sends back the predetermined test signal pattern to the first communication device.
    • 本发明的信号发送接收装置减少了连接发送电路组和接收电路组所需的高速信号线的数量,并且对信号发送接收装置进行环回测试。 环回测试电路使用错误检测电路,测试信号产生电路和用于发送错误信息的布线。 误差检测电路将预先由第一通信设备定义的测试信号模式与接收到的信号模式进行比较。 测试信号产生电路基于错误信息产生测试信号模式。 如果检测到错误,则误差信号通过布线传输到测试信号产生电路。 如果误差信号DE具有L电平,则测试信号产生电路产生预定的测试信号模式; 在接收到H电平后,将预定的测试信号模式发送回第一通信设备。
    • 19. 发明授权
    • Semiconductor integrated circuit device and method of manufacturing the
same
    • 半导体集成电路器件及其制造方法
    • US6034912A
    • 2000-03-07
    • US145076
    • 1998-09-01
    • Satoru IsomuraAtsushi ShimizuKeiichi HigetaTohru KobayashiTakeo YamadaYuko ItoKengo MiyazawaKunihiko Yamaguchi
    • Satoru IsomuraAtsushi ShimizuKeiichi HigetaTohru KobayashiTakeo YamadaYuko ItoKengo MiyazawaKunihiko Yamaguchi
    • G11C5/02H01L27/02H03K19/177
    • H03K19/1776G11C5/025H01L27/0207H03K19/1774H03K19/17792H03K19/17796
    • A memory portion and a logic circuit portion of a semiconductor device are formed on a single semiconductor substrate in which a first logic circuit block and a second logic circuit block are formed in different areas and the second logic circuit is located between a pair of memory blocks. Data stored in the pair of memory blocks are transmitted to the second logic circuit block for processing via a memory peripheral circuit. A result of the data processing is transmitted to the first logic circuit block or an external device via an input/output circuit provided in the second logic circuit block. A clock signal entered at the center portion of the semiconductor chip is supplied to a plurality of first state clock distributing circuits equidistantly disposed from the center portion and then to a plurality of second stage clock distributing circuits at least equidistantly disposed from each of the first state clock distributing circuits. Next, the clock signal is supplied to a plurality of third state clock distributing circuits equidistantly disposed from each of the second stage clock distributing circuits and then supplied to a plurality of final stage clock distributing circuits equidistantly disposed from each of the third stage clock distributing circuits. From these final stage clock distributing circuits, the clock signal is supplied to an area in whose units an internal gate array and a RAM macro cell or a logic macro cell are made replaceable with each other.
    • 半导体器件的存储部分和逻辑电路部分形成在单个半导体衬底上,其中第一逻辑电路块和第二逻辑电路块形成在不同的区域中,并且第二逻辑电路位于一对存储块之间 。 存储在一对存储器块中的数据被发送到第二逻辑电路块,以经由存储器外围电路进行处理。 经由第二逻辑电路块中提供的输入/输出电路将数据处理的结果发送到第一逻辑电路块或外部设备。 输入到半导体芯片的中心部分的时钟信号被提供给从中心部分等距设置的多个第一状态时钟分配电路,然后被提供给至少等距地从第一状态中的每个状态设置的多个第二级时钟分配电路 时钟分配电路。 接下来,时钟信号被提供给从每个第二级时钟分配电路等距离设置的多个第三状态时钟分配电路,然后提供给从每个第三级时钟分配电路等距设置的多个最后级时钟分配电路 。 从这些最终级时钟分配电路,将时钟信号提供给其单位内的内部门阵列和RAM宏小区或逻辑宏小区彼此可替换的区域。