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11. 发明授权

US07265949B2 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
标题翻译：磁阻效应元件，磁阻效应头，磁阻传感器系统和磁存储系统
公开(公告)号：US07265949B2
公开(公告)日：2007-09-04
申请号：US11477409
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/39 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect element is adapted that a non-magnetic layer (9, 18), a free layer (3b, 19), another non-magnetic layer (4, 25), a fixed layer (5, 26), and a fixing layer (6b, 27) are formed vertically symmetric with respect to a first magnetic layer (8b), to which a vertical bias magnetic field is applied from an underlying layer (2a) for a vertical bias layer (2b). The magneto-resistance effect element operates in CPP mode. Generally, the free layer is unavoidably subjected to the influence of a circular electric magnetic field caused by a current flowing perpendicularly to the film surface. However, in the magneto-resistance effect element, the influence of the electric magnetic field to which the free layer (3b) is subjected is opposite to that of the electric magnetic field to which the second free layer (19) is subjected, thereby canceling out the influences as a hole.
摘要翻译：磁阻效应元件适用于非磁性层（9,18），自由层（3b，19），另一非磁性层（4,25），固定层（5,26）和相对于第一磁性层（8b）垂直对称地形成固定层（6b，27），从垂直偏置层（2b）的下层（2a）向其施加垂直偏置磁场。磁阻效应元件以CPP模式工作。通常，自由层不可避免地受到由垂直于膜表面流动的电流引起的圆形电磁场的影响。然而，在磁阻效应元件中，自由层（3b）所受到的电磁场的影响与第二自由层（19）所受到的电磁场的影响相反，从而取消把影响作为一个洞。

12. 发明授权

US07158355B2 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
标题翻译：磁阻效应元件，磁阻效应头，磁阻传感器系统和磁存储系统
公开(公告)号：US07158355B2
公开(公告)日：2007-01-02
申请号：US11227143
申请日：2005-09-16
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect element is provided and includes a lower conductive layer, a pattern provided thereon and made up of a fixed layer having a pinned orientation of magnetization, a first non-magnetic layer provided on the fixed layer, a free layer provided on the non-magnetic layer and having an orientation of magnetization varied by a magnetic field applied thereto, a first magnetic layer provided on the free layer; and a vertical bias layer, provided on the first magnetic layer, for applying a magnetic field to the first magnetic layer, and a sense current for detecting a change in electrical resistance of the non-magnetic layer flows substantially in perpendicular relation to the non-magnetic layer. The pattern is buried in an insulation layer with the vertical bias layer of the pattern being exposed on an upper surface of the insulation layer.
摘要翻译：提供了一种磁阻效应元件，其包括下导电层，设置在其上的图案，其由具有固定层的固定取向的固定层构成，设置在固定层上的第一非磁性层，设置在固定层上的自由层所述非磁性层具有由施加到其上的磁场变化的磁化取向，设置在所述自由层上的第一磁性层; 以及设置在所述第一磁性层上的用于向所述第一磁性层施加磁场的垂直偏置层，并且用于检测所述非磁性层的电阻变化的感测电流大致垂直于所述非磁性层流动，磁性层。该图案埋在绝缘层中，图案的垂直偏置层暴露在绝缘层的上表面上。

13. 发明申请

US20060268466A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060268466A1
公开(公告)日：2006-11-30
申请号：US11477409
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

14. 发明授权

US06747853B2 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US06747853B2
公开(公告)日：2004-06-08
申请号：US10442209
申请日：2003-05-21
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

15. 发明授权

US06718621B1 Magnetoresistive head production method 失效
标题翻译：磁阻头生产方法
公开(公告)号：US06718621B1
公开(公告)日：2004-04-13
申请号：US09566971
申请日：2000-05-09
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjo , Shinsaku Saitoh
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjo , Shinsaku Saitoh
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3163 , G11B5/3169 , G11B5/3903 , G11B5/3909 , G11B5/40 , Y10T29/49034 , Y10T29/49036 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048
摘要： In a production process of an MR head using the tunnel junction film basically consisting of a free layer, a barrier layer, and a pinned layer, the resistance between the free layer and the pined layer reduced beforehand and increased afterward up to a resistance value necessary when actually used. While the resistance between the free layer and the pinned layer is low, current can easily flow, suppressing charge up, thus preventing insulation destruction of the barrier layer. This significantly increases a production yield of a recording/reproduction head using a ferromagnetic tunnel junction element.
摘要翻译：在使用基本上由自由层，阻挡层和钉扎层组成的隧道结膜的MR头的制造过程中，自由层和填充层之间的电阻预先减小并且随后增加到必要的电阻值当实际使用。虽然自由层和被钉扎层之间的电阻低，但是电流可以容易地流动，从而抑制充电，从而防止阻挡层的绝缘破坏。这显着地增加了使用铁磁隧道连接元件的记录/再现头的产量。

16. 发明申请

US20060268467A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060268467A1
公开(公告)日：2006-11-30
申请号：US11477410
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kivokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kivokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

17. 发明授权

US07277261B2 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
标题翻译：磁阻效应元件，磁阻效应头，磁阻传感器系统和磁存储系统
公开(公告)号：US07277261B2
公开(公告)日：2007-10-02
申请号：US11477410
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kivokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kivokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. Furthermore, an upper conductive layer is provided on the upper layer and an insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.
摘要翻译：磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。在下导电层上提供自由层。在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。此外，在上层和绝缘层上设置上导电层。在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离层保持不变。

18. 发明授权

US06624987B1 Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material 有权
标题翻译：具有隧道结的磁头，包括夹在金属材料的氧化物和氮化物之一中的金属材料
公开(公告)号：US06624987B1
公开(公告)日：2003-09-23
申请号：US09583917
申请日：2000-05-31
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjou , Shinsaku Saitoh
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjou , Shinsaku Saitoh
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/308 , Y10T29/49034
摘要： A magnetoresistive effect head which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the head and a magnetic recording apparatus utilizing the head. This magnetoresistive effect head utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.
摘要翻译：提供易于制造并且防止感测电流绕过阻挡层的磁阻效应头。还提供了一种用于制造磁头的方法和利用磁头的磁记录装置。该磁阻效应头利用MTJ膜，其包括用于形成其基本结构的自由层，阻挡层，被钉扎层和钉扎层，其中通过氧化或氮化金属材料形成氧化物或氮化物层，钉扎层和钉扎层。

19. 发明授权

US06798626B2 Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material 失效
标题翻译：磁阻效应元件具有与金属材料的氧化物或氮化物的铁磁性隧道结膜
公开(公告)号：US06798626B2
公开(公告)日：2004-09-28
申请号：US10356522
申请日：2003-02-03
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjou , Shinsaku Saitoh
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjou , Shinsaku Saitoh
IPC分类号： G11B533
CPC分类号： B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/308 , Y10T29/49034
摘要： A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive effect element utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.
摘要翻译：提供易于制造并且防止感测电流绕过阻挡层的磁阻效应元件。还提供了用于制造元件的方法和利用该元件的磁记录装置。该磁阻效应元件利用MTJ膜，其包括用于形成其基本结构的自由层，阻挡层，被钉扎层和钉扎层，其中通过氧化或氮化金属材料形成氧化物或氮化物层，钉扎层和钉扎层。

20. 发明授权

US06493195B1 Magnetoresistance element, with lower electrode anti-erosion/flaking layer 有权
标题翻译：磁阻元件，具有较低的电极抗侵蚀/剥落层
公开(公告)号：US06493195B1
公开(公告)日：2002-12-10
申请号：US09651068
申请日：2000-08-30
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Hiroaki Honjo , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Hiroaki Honjo , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/09 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/40 , H01F10/3268 , H01F41/302
摘要： A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patterned lower electrode layer is removed, is formed around the lower electrode layer so that its edge facing the lower electrode layer will be in contact with the edge of the lower electrode layer. By use of the lower electrode anti-erosion/flaking layer, the edge of the lower electrode layer is protected from being exposed to a release agent containing a dissolved photoresist in a photoresist layer removal step (when the photoresist layer remaining on the patterned lower electrode layer is removed), thereby the increase of roughness of the edge of the lower electrode layer due to erosion/flaking of the edge in the photoresist removal step can be avoided, and thereby electrical shorts between the upper electrode layer and the lower electrode layer can be eliminated, and thereby a magnetoresistance element of high sensitivity and high performance can be obtained and manufacturing yield of the magnetoresistance elements can be improved.
摘要翻译：磁阻元件包括下电极层，磁阻效应层，上电极层和下电极抗侵蚀/剥落层。在除去形成在图案化的下电极层上的光致抗蚀剂层之前形成的下电极抗腐蚀/剥离层围绕下电极层形成，使得其面向下电极层的边缘将与边缘的下电极层。通过使用下电极抗腐蚀/剥落层，在光致抗蚀剂层去除步骤中（当残留在图案化的下电极上的光致抗蚀剂层时，保护下电极层的边缘不暴露于含有溶解的光致抗蚀剂的脱模剂层），由此可以避免由于光致抗蚀剂去除步骤中的边缘的侵蚀/剥落引起的下电极层的边缘的粗糙度的增加，从而可以使上电极层和下电极层之间的电短路从而可以获得高灵敏度和高性能的磁阻元件，并且可以提高磁阻元件的制造成品率。

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