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11. 发明申请

US20080190909A1 Heat Treatment Apparatus Emitting Flash of Light 有权
标题翻译：热处理设备发光闪光
公开(公告)号：US20080190909A1
公开(公告)日：2008-08-14
申请号：US11970002
申请日：2008-01-07
申请人： Kenichi Yokouchi
发明人： Kenichi Yokouchi
IPC分类号： F27D11/00 , F27B5/14
CPC分类号： H01L21/324 , F27B17/0025 , F27D5/0037 , H01L21/02425 , H01L21/67103 , H01L21/67115 , H01L21/68785 , H01L21/68792
摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.
摘要翻译：连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯具有高峰值强度的闪光的叠加可以增加即使是衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。这实现了深结的激活，而不会引起基板翘曲或开裂。

12. 发明授权

US09437456B2 Heat treatment apparatus emitting flash of light 有权
公开(公告)号：US09437456B2
公开(公告)日：2016-09-06
申请号：US14176262
申请日：2014-02-10
申请人： Kenichi Yokouchi
发明人： Kenichi Yokouchi
IPC分类号： F27D11/00 , H01L21/324 , F27B17/00 , F27D5/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/324 , F27B17/0025 , F27D5/0037 , H01L21/02425 , H01L21/67103 , H01L21/67115 , H01L21/68785 , H01L21/68792
摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

13. 发明授权

US07965927B2 Heat treatment apparatus and heat treatment method 有权
标题翻译：热处理设备及热处理方法
公开(公告)号：US07965927B2
公开(公告)日：2011-06-21
申请号：US11871241
申请日：2007-10-12
申请人： Kenichi Yokouchi , Jun Watanabe
发明人： Kenichi Yokouchi , Jun Watanabe
IPC分类号： A21B2/00
CPC分类号： H01L21/67115 , H01L21/67109
摘要： In a heat treatment apparatus, a holding part moves upwardly to receive a semiconductor wafer transported into a chamber and placed on support pins. The semiconductor wafer held in close proximity to a light-transmittable plate by the holding part is preheated by a hot plate, and is then flash-heated by a flash of light emitted from flash lamps. Thereafter, the holding part moves downwardly to transfer the semiconductor wafer to the support pins, and the semiconductor wafer is transported out of the chamber. Then, a new semiconductor wafer is transported into the chamber. The holding part is adapted to perform such a series of operations of moving upwardly and downwardly also when in a standby condition pending the transport of the first semiconductor wafer in a lot into the chamber.
摘要翻译：在热处理装置中，保持部向上移动以接收输送到室中的半导体晶片并且放置在支撑销上。通过保持部保持在可透光板附近的半导体晶片由热板预热，然后由闪光灯发出的闪光闪光加热。此后，保持部分向下移动以将半导体晶片传送到支撑销，并且半导体晶片被输送出室外。然后，将新的半导体晶片输送到室中。保持部适于执行这样一系列的操作，即当处于备用状态时，向上和向下移动，等待将第一半导体晶片批量输送到腔室中。

14. 发明授权

US08859443B2 Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with flash of light 有权
标题翻译：热处理方法和通过用闪光照射基板来加热基板的热处理装置
公开(公告)号：US08859443B2
公开(公告)日：2014-10-14
申请号：US13366414
申请日：2012-02-06
申请人： Kenichi Yokouchi
发明人： Kenichi Yokouchi
IPC分类号： H01L21/00 , H01L21/687 , H01L21/677 , F27B17/00 , H01L21/67 , H01L21/324
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/67115 , H01L21/67748 , H01L21/68742 , H01L21/68785
摘要： The first flash irradiation is performed on a semiconductor wafer preheated to 500° C. to heat a front surface of the semiconductor wafer. Thereafter, the second flash irradiation is performed to reheat the front surface of the semiconductor wafer before the temperature of the front surface of the semiconductor wafer becomes equal to the temperature of a back surface of the semiconductor wafer. Thus, the second flash irradiation is performed before the temperature of the front surface of the semiconductor wafer falls. Even if less energy is consumable by the second flash irradiation, the efficiency of heating of the front surface of the semiconductor wafer resulting from each iteration of the flash irradiation is improved.
摘要翻译：在预热到500℃的半导体晶片上进行第一闪光照射，以加热半导体晶片的前表面。此后，在半导体晶片的正面的温度变得等于半导体晶片的背面的温度之前，进行第二闪光照射，以对半导体晶片的前表面再加热。因此，在半导体晶片的正面的温度下降之前进行第二闪光照射。即使通过第二闪光照射消耗较少的能量，由于闪光照射的每次迭代而导致的半导体晶片的正面的加热效率提高。

15. 发明申请

US20140162467A1 HEAT TREATMENT APPARATUS EMITTING FLASH OF LIGHT 有权
标题翻译：热处理装置发光灯
公开(公告)号：US20140162467A1
公开(公告)日：2014-06-12
申请号：US14176262
申请日：2014-02-10
申请人： Kenichi Yokouchi
发明人： Kenichi Yokouchi
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , F27B17/0025 , F27D5/0037 , H01L21/02425 , H01L21/67103 , H01L21/67115 , H01L21/68785 , H01L21/68792
摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.
摘要翻译：连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯具有高峰值强度的闪光的叠加可以增加即使是衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。这实现了深结的激活，而不会引起基板翘曲或开裂。

16. 发明授权

US08592727B2 Heat treatment apparatus emitting flash of light 有权
标题翻译：热处理设备发出闪光
公开(公告)号：US08592727B2
公开(公告)日：2013-11-26
申请号：US13298767
申请日：2011-11-17
申请人： Kenichi Yokouchi
发明人： Kenichi Yokouchi
IPC分类号： H01L21/26 , F27B5/14 , F27B5/18 , F27D11/02
CPC分类号： H01L21/324 , F27B17/0025 , F27D5/0037 , H01L21/02425 , H01L21/67103 , H01L21/67115 , H01L21/68785 , H01L21/68792
摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.
摘要翻译：连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯的峰值强度的闪光的叠加可以提高即使是衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。这实现了深结的激活，而不会引起基板翘曲或开裂。

17. 发明授权

US08355624B2 Susceptor for heat treatment and heat treatment apparatus 有权
标题翻译：受体用于热处理和热处理设备
公开(公告)号：US08355624B2
公开(公告)日：2013-01-15
申请号：US11832682
申请日：2007-08-02
申请人： Ippei Kobayashi , Yoshio Ito , Akio Wada , Kenichi Yokouchi
发明人： Ippei Kobayashi , Yoshio Ito , Akio Wada , Kenichi Yokouchi
IPC分类号： A21B2/00
CPC分类号： F27B17/0025 , H01L21/67115
摘要： A susceptor for holding a semiconductor wafer to be flash-heated by a flash of light emitted from flash lamps is formed of transparent quartz. The susceptor has a backside surface only which is roughened by shot blasting to provide a ground-glass-like surface. When a flash of light is emitted, part of the flash of light emitted from the flash lamps and passing by a peripheral portion of the semiconductor wafer held by the susceptor into the susceptor reaches the ground-glass-like backside surface and is diffusely reflected therefrom. Part of the diffusely reflected light impinges on the peripheral portion of the semiconductor wafer held by the susceptor to thereby heat the low temperature regions which have appeared in the peripheral portion of the semiconductor wafer.
摘要翻译：用于保持由闪光灯发出的闪光闪光加热的半导体晶片的感受体由透明石英形成。基座仅具有背面，通过喷丸粗糙化以提供磨玻璃状表面。当发出闪光时，从闪光灯发出的闪光的一部分闪光并且被基座保持的半导体晶片的周边部分通过到基座中，到达玻璃状的后表面并且从其中漫反射。漫反射光的一部分照射在由基座保持的半导体晶片的周边部分上，从而加热出现在半导体晶片周边部分的低温区域。

18. 发明授权

US08145046B2 Heat treatment apparatus and method for heating substrate by light irradiation 有权
标题翻译：热处理装置及通过光照射加热基板的方法
公开(公告)号：US08145046B2
公开(公告)日：2012-03-27
申请号：US12421896
申请日：2009-04-10
申请人： Hiroki Kiyama , Kenichi Yokouchi
发明人： Hiroki Kiyama , Kenichi Yokouchi
IPC分类号： F26B3/30 , C33C16/00 , A21B1/00
CPC分类号： H01L21/67115
摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.
摘要翻译：在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。第二阶段的排放量是峰值的三分之二以上。第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大致恒定的处理温度。

19. 发明申请

US20120063751A1 Heat Treatment Apparatus Emitting Flash of Light 有权
公开(公告)号：US20120063751A1
公开(公告)日：2012-03-15
申请号：US13298892
申请日：2011-11-17
申请人： Kenichi Yokouchi
发明人： Kenichi Yokouchi
IPC分类号： H05B33/02
CPC分类号： H01L21/324 , F27B17/0025 , F27D5/0037 , H01L21/02425 , H01L21/67103 , H01L21/67115 , H01L21/68785 , H01L21/68792
摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

20. 发明申请

US20120061374A1 Heat Treatment Apparatus Emitting Flash of Light 有权
标题翻译：热处理设备发光闪光
公开(公告)号：US20120061374A1
公开(公告)日：2012-03-15
申请号：US13298767
申请日：2011-11-17
申请人： Kenichi Yokouchi
发明人： Kenichi Yokouchi
IPC分类号： F27D11/00
CPC分类号： H01L21/324 , F27B17/0025 , F27D5/0037 , H01L21/02425 , H01L21/67103 , H01L21/67115 , H01L21/68785 , H01L21/68792
摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.
摘要翻译：连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯具有高峰值强度的闪光的叠加可以增加即使是衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。这实现了深结的激活，而不会引起基板翘曲或开裂。

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