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11. 发明申请

US20120025667A1 Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device 有权
标题翻译：制造压电薄膜晶片，压电薄膜元件和压电薄膜器件的方法
公开(公告)号：US20120025667A1
公开(公告)日：2012-02-02
申请号：US13137202
申请日：2011-07-27
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/04 , B32B3/00 , H01L41/22
CPC分类号： H01L41/0805 , H01L21/67069 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , H05K3/108 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
摘要翻译：一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，在形成于基板上的KNN压电薄膜进行离子蚀刻的第一加工工序;以及第二加工工序，含有氟系反应性气体的混合蚀刻气体和第一处理工序后的Ar。

12. 发明授权

US08519602B2 Piezoelectric thin film element and piezoelectric thin film device using a piezoelectric thin film of alkali-niobium oxide series 有权
标题翻译：压电薄膜元件和使用碱铌氧化物系列的压电薄膜的压电薄膜器件
公开(公告)号：US08519602B2
公开(公告)日：2013-08-27
申请号：US13006842
申请日：2011-01-14
申请人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/187
CPC分类号： H01L41/094 , H01L41/1873 , H03H9/02031
摘要： To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1-xNax)yNbO3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.
摘要翻译：为了在基板上提供具有由组成式（K1-xNax）yNbO3表示的碱金属氧化铌基钙钛矿结构的压电薄膜，其中由（K1-xNax）yNbO3表示的压电薄膜的组成比x 在0.4 @ x @ 0.7的范围内，并且通过X射线衍射测量的（001）面的摇摆曲线的半宽度在0.5°以上且2.5°以下的范围内。

13. 发明授权

US08860286B2 Piezoelectric thin film element, and piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08860286B2
公开(公告)日：2014-10-14
申请号：US13577405
申请日：2011-02-15
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/187 , H01L41/08 , H01L41/316
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.
摘要翻译：公开了一种压电薄膜元件和压电薄膜器件，其具有改进的压电性能和高性能，并且可以以提高的产率制造。压电薄膜元件（1）包括：基板（10）和布置在基板（10）上的压电薄膜（40），具有至少一个由通式（NaxKyLiz）NbO 3（0＆nlE）表示的晶体结构 ; x＆nlE; 1,0，nlE; y＆nlE; 1,0，nlE; z＆nlE; 0.2，x + y + z = 1），选自假立方晶体，六方晶体和正交晶体，气体元素的比例为80ppm以下。

14. 发明授权

US08581477B2 Piezoelectric film element using (Na,K,Li)NbO3 有权
标题翻译：使用（Na，K，Li）NbO 3的压电薄膜元件
公开(公告)号：US08581477B2
公开(公告)日：2013-11-12
申请号：US13018693
申请日：2011-02-01
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/047 , H01L41/187
CPC分类号： H01L41/187 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873 , H01L41/29 , H01L41/316
摘要： A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.
摘要翻译：提供一种能够改善压电性能的压电膜元件，其在基板上至少具有下电极，无铅压电膜和上电极，其中至少下电极中的下电极和上电极具有立方晶系，四方晶系，正交晶系，六方晶系，单斜晶系，三斜晶系，三
晶体系的晶体结构，或其组成为：这些晶体存在或其中的两种以上共存，并且晶体结构的晶轴优先取向小于或等于这些晶体的两个轴的特定轴，并且将比率c / a'设定在0.992的范围内以上且0.999以下，即与法线的方向相对于基板表面的晶格间距c的比例，相对于晶格间距a'，其倾斜角为基板表面的厚度在10°以上且30°以下的范围内。

15. 发明申请

US20120306314A1 PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20120306314A1
公开(公告)日：2012-12-06
申请号：US13577405
申请日：2011-02-15
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/04
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.
摘要翻译：公开了一种压电薄膜元件和压电薄膜器件，其具有改进的压电性能和高性能，并且可以以提高的产率制造。压电薄膜元件（1）包括：基板（10）和布置在基板（10）上的压电薄膜（40），具有至少一个由通式（NaxKyLiz）NbO 3（0＆nlE）表示的晶体结构 ; x＆nlE; 1,0，nlE; y＆nlE; 1,0，nlE; z＆nlE; 0.2，x + y + z = 1），选自假立方晶体，六方晶体和正交晶体，气体元素的比例为80ppm以下。

16. 发明申请

US20110121690A1 PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20110121690A1
公开(公告)日：2011-05-26
申请号：US12948083
申请日：2010-11-17
申请人： Kenji SHIBATA , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji SHIBATA , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/18 , H01L41/047
CPC分类号： H01L41/316 , C04B35/495 , C04B2235/3201 , C04B2235/3251 , C04B2235/656 , C04B2235/762 , C04B2235/768 , C04B2235/787 , H01L41/0477 , H01L41/094 , H01L41/1873 , H01L41/29
摘要： To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4≦x≦0.7 and 0.7≦y≦0.94.
摘要翻译：本发明提供一种压电薄膜元件，其特征在于，具有：基板上具有由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜，其中，压电薄膜的组成比x，y 由（K1-xNax）yNbO3表示，在0.4≤n1E的范围内，x＆lt; l1; 0.7和0.7＆lt; nEE; y＆nlE; 0.94。

17. 发明授权

US08450911B2 Piezoelectric thin film having a high piezoelectric constant and a low leak current 有权
标题翻译：具有高压电常数和低泄漏电流的压电薄膜
公开(公告)号：US08450911B2
公开(公告)日：2013-05-28
申请号：US12948083
申请日：2010-11-17
申请人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/187
CPC分类号： H01L41/316 , C04B35/495 , C04B2235/3201 , C04B2235/3251 , C04B2235/656 , C04B2235/762 , C04B2235/768 , C04B2235/787 , H01L41/0477 , H01L41/094 , H01L41/1873 , H01L41/29
摘要： To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4≦x≦0.7 and 0.7≦y≦0.94.
摘要翻译：本发明提供一种压电薄膜元件，其特征在于，具有：基板上具有由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜，其中，压电薄膜的组成比x，y 由（K1-xNax）yNbO3表示，在0.4 @ x @ 0.7和0.7 @ y @ 0.94的范围内。

18. 发明申请

US20110187237A1 PIEZOELECTRIC FILM ELEMENT, AND MANUFACTURING METHOD OF THE SAME AND PIEZOELECTRIC FILM DEVICE 有权
标题翻译：压电薄膜元件及其制造方法及压电薄膜器件
公开(公告)号：US20110187237A1
公开(公告)日：2011-08-04
申请号：US13018693
申请日：2011-02-01
申请人： Kazufumi SUENAGA , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi SUENAGA , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/047
CPC分类号： H01L41/187 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873 , H01L41/29 , H01L41/316
摘要： A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.
摘要翻译：提供一种能够改善压电性能的压电膜元件，其在基板上至少具有下电极，无铅压电膜和上电极，其中至少下电极中的下电极和上电极具有立方晶系，四方晶系，正交晶系，六方晶系，单斜晶系，三斜晶系，三
晶体系的晶体结构，或其组成为：这些晶体存在或其中的两种以上共存，并且晶体结构的晶轴优先取向小于或等于这些晶体的两个轴的特定轴，并且将比率c / a'设定在0.992的范围内以上且0.999以下，其是法线方向的晶格间距c与基板表面的比率，相对于晶格间距a'，其倾斜角从基板表面的厚度为10°以上且30°以下的范围。

19. 发明申请

US20110175488A1 PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20110175488A1
公开(公告)日：2011-07-21
申请号：US13006842
申请日：2011-01-14
申请人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/08 , H01L41/18 , H01L41/047
CPC分类号： H01L41/094 , H01L41/1873 , H03H9/02031
摘要： To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1−xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1−xNax)yNbO3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.
摘要翻译：为了在基板上提供具有由组成式（K1-xNax）yNbO3表示的碱金属氧化铌基钙钛矿结构的压电薄膜，其中由（K1-xNax）yNbO3表示的压电薄膜的组成比x 在0.4≤n1E的范围内，x＆nlE; 0.7，通过X射线衍射测定的（001）面的摆动曲线的半宽度在0.5°以上且2.5°以下的范围内。

20. 发明授权

US08569294B2 2-(cyclic amino)-pyrimidone derivatives 失效
标题翻译： 2-（环状氨基） - 嘧啶酮衍生物
公开(公告)号：US08569294B2
公开(公告)日：2013-10-29
申请号：US12282396
申请日：2007-03-14
申请人： Kenji Fukunaga , Toshiyuki Kohara , Kazutoshi Watanabe , Yoshihiro Usui , Fumiaki Uehara , Satoshi Yokoshima , Daiki Sakai , Shin-ichi Kusaka , Kazuki Nakayama
发明人： Kenji Fukunaga , Toshiyuki Kohara , Kazutoshi Watanabe , Yoshihiro Usui , Fumiaki Uehara , Satoshi Yokoshima , Daiki Sakai , Shin-ichi Kusaka , Kazuki Nakayama
IPC分类号： A61K31/535
CPC分类号： C07D413/14 , C07D401/04 , C07D401/14 , C07D403/14 , C07D409/14 , C07D453/06 , C07D493/04
摘要： A compound represented by the formula (I), an optically active isomer thereof, or a pharmaceutical acceptable salt thereof: wherein R2 represents a hydrogen or the like; R3 represents methyl group or the like; R20 represents a halogen atom or the like; q represents an integer of 0 to 3; Z represent nitrogen atom, CH, or the like; R4 represents hydrogen or the like; R5 represents hydrogen or the like; R6 represents a substituted alkyloxy and the like; p represents an integer of 0 to 3; X represents bond, CH2, oxygen atom, NH, or the like; any one or more of R5 and R6, R5 and R4, R6 and R4, X and R5, X and R4, X and R6, and R6 and R6 may combine to each other to form a ring, which is used for preventive and/or therapeutic treatment of a disease caused by tau protein kinase 1 hyperactivity such as a neurodegenerative diseases (e.g. Alzheimer disease).
摘要翻译：由式（I）表示的化合物或其光学活性异构体或其药学上可接受的盐：其中R2表示氢等; R3表示甲基等; R 20表示卤素原子等; q表示0〜3的整数， Z表示氮原子，CH等; R4表示氢等; R5表示氢等; R6表示取代的烷氧基等; p表示0〜3的整数， X表示键，CH2，氧原子，NH等; R 5和R 6，R 5和R 4，R 6和R 4，X和R 5，X和R 4，X和R 6以及R 6和R 6中的任何一个或多个可以彼此结合形成环，其用于预防和/ 或治疗由tau蛋白激酶1多动症如神经变性疾病（例如阿尔茨海默病）引起的疾病。

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