专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20120276659A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120276659A1
公开(公告)日：2012-11-01
申请号：US13544995
申请日：2012-07-10
申请人： Wensheng WANG , Masaki Kurasawa
发明人： Wensheng WANG , Masaki Kurasawa
IPC分类号： H01L21/02
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/56
摘要： An impurity-doped PZT film in an amorphous state doped with La, Ca, Sr, Si, Nb and/or the like is formed on a Pt film composing a bottom electrode film. Next, crystallization annealing for the impurity-doped PZT film is performed. Next, a PZT film is formed on the impurity-doped PZT film by an MOCVD method. Thereafter, an IrOX film, an IrOY film and an Ir film are formed on the PZT film.
摘要翻译：在构成底电极膜的Pt膜上形成掺杂有La，Ca，Sr，Si，Nb等的非晶状态的杂质掺杂PZT膜。接下来，进行掺杂杂质的PZT膜的结晶退火。接着，通过MOCVD法在杂质掺杂的PZT膜上形成PZT膜。此后，在PZT膜上形成IrOX膜，IrOY膜和Ir膜。

12. 发明授权

US07883961B2 Manufacturing method for ferroelectric memory device 有权
标题翻译：铁电存储器件的制造方法
公开(公告)号：US07883961B2
公开(公告)日：2011-02-08
申请号：US11998176
申请日：2007-11-28
申请人： Hiroaki Tamura , Masaki Kurasawa , Hideki Yamawaki
发明人： Hiroaki Tamura , Masaki Kurasawa , Hideki Yamawaki
IPC分类号： H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A manufacturing method for a ferroelectric memory device including: forming a lower electrode; forming an electrode oxide film composed of an oxide of a constituent material of the lower electrode; forming a first ferroelectric layer on the lower electrode by reaction between organometallic source material gas and oxygen gas; forming a second ferroelectric layer on the first ferroelectric layer by reaction between organometallic source material gas and oxygen gas; and forming an upper electrode on the second ferroelectric layer. In the method, the oxygen gas in the forming of the first ferroelectric layer is in an amount less than the amount of oxygen necessary for reaction of the organometallic source material gas. In the method, the oxygen gas in the forming of the second ferroelectric layer is in an amount greater than the amount of oxygen necessary for reaction of the organometallic source material gas.
摘要翻译：一种铁电存储器件的制造方法，包括：形成下电极; 形成由下电极的构成材料的氧化物构成的电极氧化膜; 通过有机金属源材料气体和氧气之间的反应在下电极上形成第一铁电层; 通过有机金属源材料气体和氧气之间的反应在第一铁电体层上形成第二铁电层; 以及在所述第二铁电层上形成上电极。在该方法中，形成第一铁电体层中的氧气的量小于有机金属源材料气体反应所需的氧气量。在该方法中，形成第二铁电体层的氧气的量比有机金属源材料气体反应所需的氧气的量大。

13. 发明申请

US20050167713A1 Ferroelectric capacitor and method of production of same 审中-公开
标题翻译：铁电电容器及其生产方法相同
公开(公告)号：US20050167713A1
公开(公告)日：2005-08-04
申请号：US11062856
申请日：2005-02-23
申请人： Masaki Kurasawa
发明人： Masaki Kurasawa
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/108 , H01L29/76
CPC分类号： H01L28/65 , H01L28/55 , H01L28/75
摘要： A ferroelectric capacitor including a bottom electrode layer, a ferroelectric layer on the bottom electrode layer, and a top electrode layer on the ferroelectric layer, in which a ferroelectric is formed on the bottom electrode layer so as to have a dominant axis of orientation, the bottom electrode layer has a multilayer structure, and the layers of the bottom electrode have larger coefficients of diffusion of component elements of the ferroelectric or compounds comprised of the component elements to the bottom electrode the closer the layers to the ferroelectric layer. This is produced by a method including a step of forming a ferroelectric layer by metal organic chemical vapor deposition and heating a substrate when forming this ferroelectric layer and a step of passing organometallic precursor including at least one type of the component elements of the ferroelectric layer to form the ferroelectric layer on the bottom electrode and form the component elements of the first layer of the bottom electrode contiguous with the ferroelectric layer and the component elements of the ferroelectric layer into an alloy or compound. A ferroelectric capacitor formed so that the morphology is good and the ferroelectric has a dominant axis of orientation is obtained.
摘要翻译：包括底部电极层，底部电极层上的铁电层和铁电体层上的上部电极层的强电介质电容器，其中在底部电极层上形成铁电体以具有主导轴方向，底部电极层具有多层结构，并且底部电极的层具有较大的铁电体的组分元素的扩散系数或由组分元素组成的化合物到底部电极，这些层越接近铁电层。这是通过包括通过金属有机化学气相沉积形成铁电层并在形成该铁电层时加热衬底的步骤的方法产生的，以及将包含至少一种类型的铁电体层的组分元素的有机金属前体的步骤在底部电极上形成强电介质层，并形成与强电介质层的铁电层和铁电体层的成分相邻的底部电极的第一层的成分为合金或化合物。形成铁电电容器，使得形态良好，铁电体具有主导轴方位。

14. 发明授权

US08652854B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08652854B2
公开(公告)日：2014-02-18
申请号：US13417811
申请日：2012-03-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

15. 发明授权

US08153448B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08153448B2
公开(公告)日：2012-04-10
申请号：US12453451
申请日：2009-05-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

16. 发明授权

US07547933B2 Semiconductor device and manufacturing method of a semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US07547933B2
公开(公告)日：2009-06-16
申请号：US10695643
申请日：2003-10-29
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

17. 发明授权

US07423308B2 Ferroelectric capacitor 有权
标题翻译：铁电电容器
公开(公告)号：US07423308B2
公开(公告)日：2008-09-09
申请号：US10967210
申请日：2004-10-19
申请人： Masaki Kurasawa , Kenji Maruyama
发明人： Masaki Kurasawa , Kenji Maruyama
IPC分类号： H01L29/76 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56
摘要： A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the ferroelectric film. The ferroelectric film includes a first ferroelectric film part having a first crystal system and formed along at least one interface with at least one of the lower electrode and the upper electrode and a second ferroelectric film part having a second crystal system that is different from the first crystal system.
摘要翻译：铁电电容器包括下电极，设置在下电极上并具有钙钛矿型结构的铁电体膜和设置在铁电体膜上的上电极。铁电体膜包括具有第一晶体系的第一铁电体膜部分，并且沿着与下部电极和上部电极中的至少一个的至少一个界面形成，第二铁电体膜部分具有与第一晶体系统不同的第二晶体系统晶体系统。

18. 发明授权

US07153705B2 Electronic device with electrode and its manufacture 失效
标题翻译：带电极的电子设备及其制造
公开(公告)号：US07153705B2
公开(公告)日：2006-12-26
申请号：US10821841
申请日：2004-04-12
申请人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
发明人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.
摘要翻译：制造电子器件的方法包括以下步骤：（a）制备（001）取向的ReO 3 N 3层; 和（b）在ReO 3层上形成具有钙钛矿结构的（001）取向的氧化物铁电层。优选地，步骤（a）包括以下步骤：（a-1）制备（001）取向的MgO层; 和（a-2）在MgO层上形成（001）取向的ReO 3 3层。提供一种能够获得大极化的铁电体层的电子装置及其制造方法。

19. 发明申请

US20060166378A1 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060166378A1
公开(公告)日：2006-07-27
申请号：US10532249
申请日：2003-11-05
申请人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
发明人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together. The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.
摘要翻译：通过在具有适于生长表面的单晶衬底10上形成具有平面（111）的铁电单晶薄膜层，铁电单结晶含有Pb的具有与基板表面平行的平面（111）11的薄膜12'（或含有Pb的铁电体多晶薄膜，与基板的表面平行取向平行），以及半导体器件的电路的第16部分，从而制造具有含有Pb的所述铁电薄膜和所述半导体器件的所述电路的所述部分的单晶衬底10; 并将所述单晶衬底10预先连接到其上形成有半导体器件的另一电路的另一衬底上，以将两个电路耦合在一起。由此得到的半导体装置中的电容器具有极性电荷量大的铁电薄膜。半导体器件可以用作高度可靠的非易失性存储器。

20. 发明授权

US07029984B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07029984B2
公开(公告)日：2006-04-18
申请号：US11136564
申请日：2005-05-25
申请人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
发明人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
IPC分类号： H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
摘要翻译：公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。将第一膜沉积工艺的膜沉积温度设定为至少600℃

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式