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11. 发明授权

US4360821A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4360821A
公开(公告)日：1982-11-23
申请号：US66230
申请日：1979-08-13
申请人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
发明人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
摘要翻译：在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

12. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

13. 发明授权

US4255686A Storage type photosensor containing silicon and hydrogen 失效
标题翻译：含硅和氢的存储型光电传感器
公开(公告)号：US4255686A
公开(公告)日：1981-03-10
申请号：US39580
申请日：1979-05-16
申请人： Eiichi Maruyama , Yoshinori Imamura , Saburo Ataka , Kiyohisa Inao , Yukio Takasaki , Toshihisa Tsukada , Tadaaki Hirai
发明人： Eiichi Maruyama , Yoshinori Imamura , Saburo Ataka , Kiyohisa Inao , Yukio Takasaki , Toshihisa Tsukada , Tadaaki Hirai
IPC分类号： H01J29/45 , H01L31/0248 , H01J31/38
CPC分类号： H01J29/45
摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.
摘要翻译：在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

14. 发明授权

US4199777A Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4199777A
公开(公告)日：1980-04-22
申请号：US764845
申请日：1977-02-02
申请人： Eiichi Maruyama , Hideaki Yamamoto
发明人： Eiichi Maruyama , Hideaki Yamamoto
IPC分类号： H01L27/15 , H01L23/14 , H01L23/538 , H01L25/16 , H01L27/146 , H01L29/267 , H01L31/00 , H01L29/06
CPC分类号： H01L27/14665 , H01L23/147 , H01L23/538 , H01L24/18 , H01L24/24 , H01L25/16 , H01L29/267 , H01L31/00 , H01L33/00 , H01L2224/24147 , H01L2224/32145 , H01L2224/73267 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/15173 , H01L2924/15787
摘要： A semiconductor device includes at least two different elements having different functions. At least one of the elements is fixed within a recess provided in a substrate, and wirings are provided on an insulating film deposited commonly on the elements and the substrate, so that there is no step or clearance between the elements or between the element and the substrate, making it possible to easily form good interconnections.
摘要翻译：半导体器件包括具有不同功能的至少两个不同元件。至少一个元件被固定在设置在基板中的凹槽内，并且布线设置在通常在元件和基板上沉积的绝缘膜上，使得元件之间或元件之间不存在台阶或间隙衬底，使得可以容易地形成良好的互连。

15. 发明授权

US3984722A Photoconductive target of an image pickup tube and method for manufacturing the same 失效
标题翻译：摄像管的感光体及其制造方法
公开(公告)号：US3984722A
公开(公告)日：1976-10-05
申请号：US469760
申请日：1974-05-14
申请人： Eiichi Maruyama , Hiroaki Hachino , Yasushi Saitoh , Tadaaki Hirai , Naohiro Goto , Yukinao Isozaki , Keiichi Shidara , Saiichi Koizumi
发明人： Eiichi Maruyama , Hiroaki Hachino , Yasushi Saitoh , Tadaaki Hirai , Naohiro Goto , Yukinao Isozaki , Keiichi Shidara , Saiichi Koizumi
IPC分类号： H01J29/45 , H01L31/08 , H01L31/109 , H01J31/38
CPC分类号： H01L31/109 , H01J29/456 , H01J9/233
摘要： An image pickup tube target wherein a rectifying contact which is formed at a boundary of a first layer of a material selected from the group consisting of tin oxide, indium oxide, titanium oxide, cadmium sulfide, zinc sulfide, cadmium selenide, zinc selenide, n-type germanium, n-type silicon and mixture thereof, and a second layer of a material mainly consisting of selenium and including halogen, is reversely biased and operated at a region where signal current is saturated with respect to applied voltage. The second layer of the material includes 50 atomic percent or more of selenium and 0.1 - 1000 atomic ppm of halogen. More preferably, the second layer comprises 3-20 atomic % of arsenic, 0.1-20 atomic ppm of iodine and balance mainly consisting of selenium.
摘要翻译：一种图像拾取管目标，其中形成在选自氧化锡，氧化铟，氧化钛，硫化镉，硫化锌，硒化镉，硒化锌，氮化镍的材料的第一层的边界处的整流接触型锗，n型硅及其混合物，以及主要由硒组成并包括卤素的材料的第二层反向偏置并在信号电流相对于施加电压饱和的区域操作。材料的第二层包括50原子％或更多的硒和0.1-1000原子ppm的卤素。更优选地，第二层包含3-20原子％的砷，0.1-20原子ppm的碘，余量主要由硒组成。

16. 发明授权

US4673959A Heterojunction FET with doubly-doped channel 失效
标题翻译：具有双掺杂沟道的异质结FET
公开(公告)号：US4673959A
公开(公告)日：1987-06-16
申请号：US686661
申请日：1984-12-27
申请人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
发明人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L29/205 , H01L29/423 , H01L29/778 , H01L29/80
CPC分类号： H01L29/42316 , H01L29/7781 , H01L29/7786
摘要： There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and drain areas on opposite edges of the channel, wherein the first and second semiconductor layers formed between the source and drain regions have an area containing only 10.sup.16 cm.sup.-3 or less of an impurity; the first semiconductor layer has a wider forbidden band than that of the second semiconductor layer; and further including at least one semiconductor layer having a higher activation efficiency of impurities than that of the first semiconductor layer, with such at least one semiconductor layer being located on the side of the first semiconductor layer not in contact with the second semiconductor layer. A multi-quantum well structure may be used as the higher impurity activation efficiency semiconductor layer. The electrical resistance in the semiconductor area constituting the source and drain regions can be lowered by utilizing such a higher impurity activation efficiency semiconductor layer.
摘要翻译：公开了一种半导体器件，其至少包括第一和第二半导体层，该第一和第二半导体层被定位以在它们之间形成异质结，这样的异质结适于形成沟道，用于控制载流子的装置，以及在其的相对边缘上的源极和漏极区域沟道，其中形成在源区和漏区之间的第一和第二半导体层具有仅含有1016cm-3或更小的杂质的面积; 第一半导体层具有比第二半导体层更宽的禁带; 并且还包括至少一个具有比第一半导体层高的杂质活化效率的半导体层，这样的至少一个半导体层位于不与第二半导体层接触的第一半导体层的一侧。可以使用多量子阱结构作为较高的杂质活化效率半导体层。通过利用这种较高的杂质活化效率的半导体层，可以降低构成源区和漏区的半导体区的电阻。

17. 发明授权

US4605945A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4605945A
公开(公告)日：1986-08-12
申请号：US609446
申请日：1984-05-11
申请人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
发明人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L27/06 , H01L29/10 , H01L29/778 , H01L29/80
CPC分类号： H01L27/0605 , H01L29/1075 , H01L29/7786 , H01L29/7787
摘要： In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.
摘要翻译：在具有布置成形成异质结的至少第一半导体层和第二半导体层的半导体器件中，第一半导体层的导带的边缘的能量位于能量低于导带的边缘的能量异质结附近的第二半导体层，与第一半导体层电连接的至少一对电极，以及控制在异质结附近诱发的载流子的装置; 一种半导体器件，其特征在于，在所述一对电极之间的所述第一半导体层的至少一部分中包含低杂质浓度区域，与所述一对电极中的每一对相邻的区域是高杂质浓度区域，并且至少在第一半导体层中包含含有与上述区域中所含的杂质相同或相反的导电型的杂质的一层。

18. 发明授权

US4380557A Method of production of image pickup device 失效
标题翻译：图像拾取装置的制造方法
公开(公告)号：US4380557A
公开(公告)日：1983-04-19
申请号：US287554
申请日：1981-07-28
申请人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
发明人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
IPC分类号： G03G5/08 , B05D3/02 , B05D3/04 , H01J9/233 , H01L21/205 , H01L31/04 , H01L31/08 , H01L31/10
CPC分类号： H01J9/233
摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.
摘要翻译：在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性通过这种热处理高度改善了层。例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

19. 发明授权

US4377628A Electrophotographic member with .alpha.-Si and H 失效
标题翻译：具有α-Si和H的电子照相元件
公开(公告)号：US4377628A
公开(公告)日：1983-03-22
申请号：US257346
申请日：1981-04-24
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , G03F7/20 , G03G5/082 , H01L31/08 , G03G5/14
CPC分类号： G03F7/70216 , G03F7/707 , G03G5/08221 , G03G5/08235
摘要： Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.
摘要翻译：公开了具有非晶硅光电导层的电子照相构件，其中照射光电导体的光被吸收到其中的部分之间的距离，直到其强度降低到其入射时的1％，并且光电导体的与光入射相反的界面一侧为5μm以下，能够降低光电导层的残留电位。构成电子照相构件的光电导元件的从其表面向内存储电荷的至少10nm厚的电子照相构件的部分由非晶硅制成，其具有至少1.6eV的光学禁带宽和电阻率至少1010 OMEGA xcm。此外，在这种光导电层内，具有比形成表面部分的非晶硅的光学禁带宽小的非晶硅区域设置在至少10nm的厚度。通过以这种方式在光导电层内形成较窄的光学禁带区域，可以提高光电导层对较长波长的光的灵敏度。

20. 发明授权

US4365013A Electrophotographic member 失效
标题翻译：电子照相成份
公开(公告)号：US4365013A
公开(公告)日：1982-12-21
申请号：US287633
申请日：1981-07-28
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , C23C14/14 , C23C14/35 , G03G5/082 , G03G5/14 , G03G5/147 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/144 , G03G5/14704
摘要： Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/and interface of the photoconductor layer toward the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV and also has the property that an intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm.sup.-1, approximately 1,140 cm.sup.-1, approximately 1,040 cm.sup.-1, approximately 650 cm.sup.-1, approximately 860 cm.sup.-1 and approximately 800 cm.sup.-1 in an infrared absorption spectrum as are attributed to a bond between silicon and oxygen does not exceed 20% of a higher one of intensities of peaks having centers at wave numbers of approximately 2,000 cm.sup.-1 and approximately 2,100 cm.sup.-1 as are attributed to a bond between silicon and hydrogen. Dark decay characteristics are good, and a satisfactory surface potential can be secured. In addition, the characteristics are stable versus time.
摘要翻译：公开了一种具有至少一种支撑体和主要由非晶硅形成的感光体层的电子照相构件，其特征在于，所述无定形硅含有至少50原子％的硅和至少1原子％的氢在该层内的平均值并且从光电导体层的表面或/和界面朝向光电导体层的内部至少10nm厚的部分具有至少1原子％至至多40原子级的范围内的氢含量，至少1.3eV至至多2.5eV的范围内的光学禁带宽度，并且还具有以波数约2,200cm-1为中心的至少一个峰的强度，约为1140cm- 在归因于硅和氧之间的键的红外吸收光谱中，约1,040cm -1，约650cm -1，约650cm -1，约860cm -1和约800cm -1不超过硅和氧之间的键的20％强度o f峰由于硅和氢之间的键而归因于波数约2,000cm -1和约2,100cm -1的中心。暗衰变特性良好，可以确保令人满意的表面电位。此外，特性与时间相比是稳定的。

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