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11. 发明授权

US07541287B2 Method for machining a semiconductor wafer on both sides in a carrier, carrier, and a semiconductor wafer produced by the method 有权
标题翻译：在通过该方法制造的载体，载体和半导体晶片的两侧加工半导体晶片的方法
公开(公告)号：US07541287B2
公开(公告)日：2009-06-02
申请号：US11487652
申请日：2006-07-17
申请人： Ruediger Schmolke , Thomas Buschhardt , Gerhard Heier , Guido Wenski
发明人： Ruediger Schmolke , Thomas Buschhardt , Gerhard Heier , Guido Wenski
IPC分类号： H01L21/302
CPC分类号： B24B37/28 , Y10S438/959
摘要： A semiconductor wafer is guided in a cutout in a carrier while a thickness of the semiconductor wafer is reduced to a target thickness by material removal from the front and back surfaces simultaneously. The semiconductor wafer is machined until it is thinner than a carrier body and thicker than an inlay used to line the cutout in the carrier to protect the semiconductor wafer. The carrier is distinguished by the fact that the carrier body and the inlay have different thicknesses throughout the entire duration of the machining of the semiconductor wafer, the carrier body being thicker than the inlay, by from 20 to 70 μm. Themethod provides semiconductor wafers polished on both sides, having a front surface, a back surface and an edge, and a local flatness of the front surface, SFQRmax of less than 50 nm with an edge exclusion of R-2 mm and less than nm with an edge exclusion of R-1 mm, based on a site area of 26 by 8 mm.
摘要翻译：半导体晶片被引导在载体的切口中，同时通过从前表面和背面去除材料将半导体晶片的厚度减小到目标厚度。半导体晶片被加工直到其比载体体薄并且比用于将载体上的切口对准的嵌体更厚以保护半导体晶片。载体的特征在于，在半导体晶片的加工整个整个持续时间内，载体主体和嵌体具有不同的厚度，载体主体比镶嵌物厚20〜70μm。该方法提供在两侧抛光的半导体晶片，具有前表面，后表面和边缘以及前表面的局部平坦度，SFQRmax小于50nm，边缘排除R-2mm和小于nm，基于26×8mm的场地面积，R-1mm的边缘排除。

12. 发明申请

US20090007940A1 Process For Cleaning A Semiconductor Wafer Using A Cleaning Solution 失效
标题翻译：使用清洁溶液清洗半导体晶片的工艺
公开(公告)号：US20090007940A1
公开(公告)日：2009-01-08
申请号：US12140306
申请日：2008-06-17
申请人： Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Guenter Schwab
发明人： Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Guenter Schwab
IPC分类号： B08B3/08
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/3209 , H01L21/02052
摘要： Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition.
摘要翻译：使用初始组成中含有碱性铵成分的清洗液清洗半导体晶片，其中半导体晶片在单晶片处理中与清洗液接触，在清洗过程中加入氟化氢作为其他成分并且清洁溶液在清洁结束时具有不同于初始组成的组合物。

13. 发明申请

US20070021042A1 Method for machining a semiconductor wafer on both sides in a carrier, carrier, and a semiconductor wafer produced by the method 有权
标题翻译：在通过该方法制造的载体，载体和半导体晶片的两侧加工半导体晶片的方法
公开(公告)号：US20070021042A1
公开(公告)日：2007-01-25
申请号：US11487652
申请日：2006-07-17
申请人： Ruediger Schmolke , Thomas Buschhardt , Gerhard Heier , Guido Wenski
发明人： Ruediger Schmolke , Thomas Buschhardt , Gerhard Heier , Guido Wenski
IPC分类号： B24B7/00
CPC分类号： B24B37/28 , Y10S438/959
摘要： A semiconductor wafer is guided in a cutout in a carrier while a thickness of the semiconductor wafer is reduced to a target thickness by material removal from the front and back surfaces simultaneously. The semiconductor wafer is machined until it is thinner than a carrier body and thicker than an inlay used to line the cutout in the carrier to protect the semiconductor wafer. The carrier is distinguished by the fact that the carrier body and the inlay have different thicknesses throughout the entire duration of the machining of the semiconductor wafer, the carrier body being thicker than the inlay, by from 20 to 70 μm. The method provides semiconductor wafers polished on both sides, having a front surface, a back surface and an edge, and a local flatness of the front surface, SFQRmax of less than 50 nm with an edge exclusion of R-2 mm and less than 115 nm with an edge exclusion of R-1 mm, based on a site area of 26 by 8 mm.
摘要翻译：半导体晶片被引导在载体的切口中，同时通过从前表面和背面去除材料将半导体晶片的厚度减小到目标厚度。半导体晶片被加工直到其比载体体薄并且比用于将载体上的切口对准的嵌体更厚以保护半导体晶片。载体的特征在于，在半导体晶片的加工整个整个持续时间内，载体主体和嵌体具有不同的厚度，载体主体比镶嵌物厚20〜70μm。该方法提供在两侧抛光的半导体晶片，具有前表面，后表面和边缘以及前表面的局部平坦度，SFQR 小于50nm，边缘排除 R-2mm和小于115nm，边缘排除R-1mm，基于26×8mm的位置面积。

14. 发明授权

US08093143B2 Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side 有权
标题翻译：包括具有前侧和后侧的硅单晶衬底和沉积在正面上的SiGe层的晶片的制造方法
公开(公告)号：US08093143B2
公开(公告)日：2012-01-10
申请号：US12724584
申请日：2010-03-16
申请人： Peter Storck , Thomas Buschhardt
发明人： Peter Storck , Thomas Buschhardt
IPC分类号： H01L21/36
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02658 , Y10S438/933
摘要： A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order: simultaneously polishing the front and the back side of the silicon single crystal substrate; depositing a stress compensating layer on the back side of the silicon single crystal substrate; polishing the front side of the silicon single crystal substrate; cleaning the silicon single crystal substrate having the stress compensating layer deposited on the back side; and depositing a fully or partially relaxed layer of SiGe on the front side of the silicon single crystal substrate.
摘要翻译：一种用于制造具有正面和背面的硅单晶基板和沉积在正面上的SiGe层的晶片的方法，该方法使用以下顺序的步骤：同时抛光硅的正面和背面单晶基板; 在所述硅单晶衬底的背面上沉积应力补偿层; 抛光硅单晶衬底的正面; 清洗具有沉积在背面的应力补偿层的硅单晶衬底; 以及在硅单晶衬底的正面上沉积完全或部分弛豫的SiGe层。

15. 发明授权

US06530826B2 Process for the surface polishing of silicon wafers 有权
公开(公告)号：US06530826B2
公开(公告)日：2003-03-11
申请号：US10021515
申请日：2001-10-30
申请人： Guido Wenski , Thomas Buschhardt , Heinrich Hennhöfer , Bruno Lichtenegger
发明人： Guido Wenski , Thomas Buschhardt , Heinrich Hennhöfer , Bruno Lichtenegger
IPC分类号： B24B100
CPC分类号： H01L21/02024
摘要： A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.

16. 发明授权

US6095898A Process and device for polishing semiconductor wafers 有权
标题翻译：用于抛光半导体晶片的工艺和器件
公开(公告)号：US6095898A
公开(公告)日：2000-08-01
申请号：US181428
申请日：1998-10-28
申请人： Heinrich Hennhofer , Hans Kramer , Helmut Kirschner , Manfred Thurner , Thomas Buschhardt , Klaus Rottger
发明人： Heinrich Hennhofer , Hans Kramer , Helmut Kirschner , Manfred Thurner , Thomas Buschhardt , Klaus Rottger
IPC分类号： B24B37/04 , B24B49/14 , H01L21/304 , B24B1/00
CPC分类号： B24B37/12 , B24B37/015 , B24B37/042
摘要： A process and device for polishing semiconductor wafers has at least one side of at least one semiconductor wafer pressed against a polishing plate, over which a polishing cloth is stretched. The semiconductor wafer and the polishing plate are moved relative to each other to polish the wafer. During the polishing, the semiconductor wafer passes over at least two regions on the polishing plate, which regions have defined radial widths and are at different temperatures. Temperature-control means are provided in the polishing plate, with the aid of which the number, the radial widths and the temperatures of the regions are fixed before the semiconductor wafers are polished.
摘要翻译：用于抛光半导体晶片的工艺和装置具有至少一个半导体晶片的至少一侧，该至少一个半导体晶片压在抛光板上，抛光布被拉伸。半导体晶片和抛光板相对于彼此移动以抛光晶片。在抛光期间，半导体晶片通过抛光板上的至少两个区域，这些区域具有限定的径向宽度并处于不同的温度。温度控制装置设置在抛光板中，借助于此，在半导体晶片被抛光之前，区域的数量，径向宽度和温度被固定。

17. 发明申请

US20100139706A1 Method For The Treatment Of A Semiconductor Wafer 有权
标题翻译：半导体晶片的处理方法
公开(公告)号：US20100139706A1
公开(公告)日：2010-06-10
申请号：US12630005
申请日：2009-12-03
申请人： Guenter Schwab , Diego Feijoo , Thomas Buschhardt , Hans-Joachim Luthe , Franz Sollinger
发明人： Guenter Schwab , Diego Feijoo , Thomas Buschhardt , Hans-Joachim Luthe , Franz Sollinger
IPC分类号： B08B3/00
CPC分类号： B08B3/08 , H01L21/02052 , H01L21/67028
摘要： Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.
摘要翻译：半导体晶片在至少部分填充有含氟化氢的溶液的液体容器中处理，使得表面氧化物溶解，沿输送方向输送出溶液并干燥，然后用含臭氧气体处理以氧化半导体晶片的表面，其中半导体晶片表面的一部分与含臭氧气体接触，而另一部分表面仍然与溶液接触，并且其中溶液和含臭氧气体在空间上分离使他们不相互接触。

18. 发明申请

US20090145457A1 Method For The Wet-Chemical Treatment Of A Semiconductor Wafer 有权
标题翻译：半导体晶片的湿化学处理方法
公开(公告)号：US20090145457A1
公开(公告)日：2009-06-11
申请号：US12326969
申请日：2008-12-03
申请人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
发明人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
IPC分类号： B08B3/04
CPC分类号： H01L21/02052 , B08B3/10 , H01L21/02057
摘要： A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.
摘要翻译：半导体晶片的湿化学处理方法包括：a）旋转半导体晶片; b）将包含直径为100μm或更小的气泡的清洗液施加到旋转的晶片上，使得在晶片上形成液膜; c）将旋转的半导体晶片暴露于含有反应气体的气氛中; 和d）从晶片上去除液膜。

19. 发明申请

US20080308122A1 Process For Cleaning, Drying and Hydrophilizing A Semiconductor Wafer 有权
标题翻译：一种用于清洁，干燥和亲水化半导体晶片的方法
公开(公告)号：US20080308122A1
公开(公告)日：2008-12-18
申请号：US12134378
申请日：2008-06-06
申请人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo
发明人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo
IPC分类号： C23G1/02
CPC分类号： H01L21/02052 , C30B29/16 , C30B33/00
摘要： Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.
摘要翻译：半导体晶片按照以下顺序进行以下步骤的清洗，干燥和亲水化：a）用含有氟化氢的液体水溶液处理半导体晶片，半导体晶片至少偶尔围绕其中心轴线旋转，以及b）干燥半导体在含有臭氧的气氛中以1000-5000转/分钟的转速使半导体晶片围绕其中心轴线旋转，由于由半导体晶片产生的离心力，含有氟化氢的液体水溶液离开半导体晶片半导体晶片的旋转和表面被臭氧亲水化。

20. 发明授权

US08372213B2 Method for the treatment of a semiconductor wafer 有权
公开(公告)号：US08372213B2
公开(公告)日：2013-02-12
申请号：US12630005
申请日：2009-12-03
申请人： Guenter Schwab , Diego Feijoo , Thomas Buschhardt , Hans-Joachim Luthe , Franz Sollinger
发明人： Guenter Schwab , Diego Feijoo , Thomas Buschhardt , Hans-Joachim Luthe , Franz Sollinger
IPC分类号： B08B3/00
CPC分类号： B08B3/08 , H01L21/02052 , H01L21/67028
摘要： Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.

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