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    • 11. 发明授权
    • Integrated circuit chip wiring structure with crossover capability and
method of manufacturing the same
    • 具有交叉能力的集成电路芯片布线结构及其制造方法
    • US5818110A
    • 1998-10-06
    • US755077
    • 1996-11-22
    • John Edward Cronin
    • John Edward Cronin
    • H01L21/768H01L23/522H01L23/532H01L23/48
    • H01L23/5221H01L21/76877H01L23/5329H01L2924/0002Y10S257/923
    • An integrated circuit chip wiring structure having crossover and contact capability without an interlock via layer and a method of making the wiring structure all disclosed. The method utilizes a multi-damascene approach, using the standard damascene processing steps to wire the first, then metallization layer, then providing the second, thick metallization layer with first regions for metal wire. A conformal coating is deposited, filling the second regions but not the first regions. When an etch is performed, the layers underlying the second regions are exposed but not those underlying the second regions. Therefore, it is possible to selectively expose the metal lines in the first layer so that electrical connection is made with the metal wire of the second layer in the exposed areas. Electrical isolation is maintained in the narrower, second regions of metal wire.
    • 具有不具有互锁通路层的交叉接触能力的集成电路芯片布线结构和全部公开了布线结构的方法。 该方法使用多镶嵌方法,使用标准镶嵌处理步骤来对第一层,然后金属化层进行接线,然后为第二厚金属化层提供金属线的第一区域。 沉积保形涂层,填充第二区域而不是第一区域。 当进行蚀刻时,第二区域下面的层被暴露,但不暴露第二区域的层。 因此,可以选择性地暴露第一层中的金属线,使得在暴露区域中与第二层的金属线进行电连接。 在金属丝的较窄的第二区域中保持电隔离。