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11. 发明授权

US07655368B2 Method for exposing a substrate and lithographic projection apparatus 有权
公开(公告)号：US07655368B2
公开(公告)日：2010-02-02
申请号：US10936727
申请日：2004-09-09
申请人： Jozef Maria Finders , Judocus Marie Dominicus Stoeldraijer , Johannes Wilhelmus De Klerk
发明人： Jozef Maria Finders , Judocus Marie Dominicus Stoeldraijer , Johannes Wilhelmus De Klerk
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70333 , G03F7/70425
摘要： A method for exposing a resist layer on a substrate to an image of a pattern on a mask is disclosed whereby, after starting exposure and before completing exposure, a controlled amount of contrast loss is introduced by a controller in the image at the resist layer by changing during exposure the position of the substrate holder. The contrast loss affects the pitch dependency of the resolution of a lithographic projection apparatus, and its control is used to match pitch dependency of resolution between different lithographic projection apparatus.

12. 发明授权

US07466413B2 Marker structure, mask pattern, alignment method and lithographic method and apparatus 有权
标题翻译：标记结构，掩模图案，对准方法和光刻方法和装置
公开(公告)号：US07466413B2
公开(公告)日：2008-12-16
申请号：US10887323
申请日：2004-07-09
申请人： Jozef Maria Finders , Mircea Dusa , Richard Johannes Franciscus Van Haren , Luis Alberto Colina Santamaria Colina , Eric Henri Jan Hendrickx , Geert Vandenberghe , Alexander Hendrikus Martinus Van Der Hoff
发明人： Jozef Maria Finders , Mircea Dusa , Richard Johannes Franciscus Van Haren , Luis Alberto Colina Santamaria Colina , Eric Henri Jan Hendrickx , Geert Vandenberghe , Alexander Hendrikus Martinus Van Der Hoff
IPC分类号： G01B11/00
CPC分类号： G03F7/70633 , G03F7/70358 , G03F9/7076 , G03F9/7084
摘要： A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.
摘要翻译：用于利用光刻设备对基板上的标记结构进行成像的掩模图案，所述标记结构被配置为确定光学对准或覆盖，包括用于限定标记结构的组成部分。组成部分包括多个片段，每个片段具有基本上具有器件特征和片段形状的尺寸。掩模图案包括位于片段形状的关键部分的至少一个辅助特征。所述至少一个辅助特征具有基本上小于光刻投影的分辨率的尺寸，并且被配置为抵消在关键部分处的光刻投影中产生的光学像差或光学限制。

13. 发明授权

US07425397B2 Method of determining an illumination profile and device manufacturing method 有权
标题翻译：确定照明轮廓和装置制造方法的方法
公开(公告)号：US07425397B2
公开(公告)日：2008-09-16
申请号：US11223154
申请日：2005-09-12
申请人： Jozef Maria Finders , Armand Eugene Albert Koolen
发明人： Jozef Maria Finders , Armand Eugene Albert Koolen
IPC分类号： G03C5/00
CPC分类号： G03F7/70625 , G03F7/70083
摘要： An illumination profile useable in a lithographic apparatus to match the output of a target lithographic apparatus is obtained by obtaining a reference CD vs. pitch function for the lithographic projection apparatus at at least a plurality of pitch values using a reference illumination profile; obtaining a target CD vs. pitch function at at least the plurality of pitch values; generating a CD sensitivity map for the lithographic projection apparatus for a given pattern; calculating from the reference CD vs. pitch function, the target CD vs. pitch function and the CD sensitivity map, a suitable illumination profile to be used in said lithographic apparatus to expose said given pattern.
摘要翻译：通过使用参考照明轮廓以至少多个间距值获得用于光刻投影设备的参考CD对间距函数，获得可用于光刻设备中以匹配目标光刻设备的输出的照明轮廓; 在至少多个音调值上获得目标CD与音调函数; 产生用于给定图案的光刻投影装置的CD敏感度图; 从参考CD相对于音调函数，目标CD与音调函数和CD灵敏度映射计算要在所述光刻设备中使用以暴露所述给定图案的合适的照明轮廓。

14. 发明授权

US08780325B2 Method for a lithographic apparatus 有权
标题翻译：光刻设备的方法
公开(公告)号：US08780325B2
公开(公告)日：2014-07-15
申请号：US12635933
申请日：2009-12-11
申请人： Luis Alberto Colina Santamaria , Jozef Maria Finders , Laurentius Cornelius De Winter
发明人： Luis Alberto Colina Santamaria , Jozef Maria Finders , Laurentius Cornelius De Winter
IPC分类号： G03B27/68 , G03F7/20
CPC分类号： G03F7/70266 , G03B27/54 , G03F7/70308 , G03F7/70525 , G03F7/70833 , G03F7/70891
摘要： In an embodiment, there is provided a method of at least partially compensating for a deviation in a property of a pattern feature to be applied to a substrate using a lithographic apparatus. The method includes determining a desired phase change to be applied to at least a portion of a radiation beam that is to be used to apply the pattern feature to the substrate and which would at least partially compensate for the deviation in the property. The determination of the desired phase change includes determining a desired configuration of a phase modulation element. The method further includes implementing the desired phase change to the portion of the radiation beam when applying the pattern feature to the substrate, the implementation of the desired phase change comprising illuminating the phase modulation element with the portion of the radiation beam when the phase modulation element is in the desired configuration.
摘要翻译：在一个实施例中，提供了一种至少部分地补偿使用光刻设备施加到基板的图案特征的特性的偏差的方法。该方法包括确定要应用于要用于将图案特征应用于衬底的辐射束的至少一部分的期望相位变化，并且将至少部分地补偿该特性的偏差。所需相位变化的确定包括确定相位调制元件的期望配置。该方法还包括当将图案特征应用于衬底时，实现对辐射束的该部分的期望的相位变化，所述相位变化的实现包括当相位调制元件处于所需的配置。

15. 发明授权

US08612045B2 Optimization method and a lithographic cell 有权
标题翻译：优化方法和平版印刷电池
公开(公告)号：US08612045B2
公开(公告)日：2013-12-17
申请号：US12633252
申请日：2009-12-08
申请人： Everhardus Cornelis Mos , Mircea Dusa , Jozef Maria Finders , Christianus Gerardus Maria De Mol , Scott Anderson Middlebrooks , Dongzi Wangli
发明人： Everhardus Cornelis Mos , Mircea Dusa , Jozef Maria Finders , Christianus Gerardus Maria De Mol , Scott Anderson Middlebrooks , Dongzi Wangli
IPC分类号： G05B13/04 , G03B27/42
CPC分类号： G03B27/42 , G03F7/705
摘要： Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.
摘要翻译：记录双重图案化平版印刷工艺中的每个步骤中的变量，并测量双重图案化工艺中的中间特征的特征。然后对最终特征进行建模，并优化变量的值。

16. 再颁专利

USRE43643E1 Lithographic manufacturing process, lithographic projection apparatus, and device manufactured thereby 有权
标题翻译：平版印刷制造工艺，光刻投影装置和由此制造的装置
公开(公告)号：USRE43643E1
公开(公告)日：2012-09-11
申请号：US11524497
申请日：2006-09-21
申请人： Jozef Maria Finders
发明人： Jozef Maria Finders
IPC分类号： G03B27/68 , G03B27/42 , G03B27/52
CPC分类号： G03F7/70558 , G03F7/70458 , G03F7/70625 , G03F7/70991
摘要： A lithographic manufacturing process is disclosed in which first information of a lithographic transfer function of a first lithographic projection apparatus is obtained. The information is compared with second information of a reference lithographic transfer function (e.g. of a second lithographic projection apparatus). The difference between the first and second information is calculated. Then, the change of machine settings for the first lithographic projection apparatus, needed to minimize the difference, is calculated and applied to the first lithographic projection apparatus. In an exemplary application, a match between the first and second lithographic projection apparatus of any pitch-dependency of feature errors is improved.
摘要翻译：公开了获得第一光刻投影装置的光刻传递函数的第一信息的光刻制造工艺。将信息与参考光刻传递函数（例如，第二光刻投影装置）的第二信息进行比较。计算第一和第二信息之间的差异。然后，计算第一光刻投影装置的最小化差异所需的用于第一光刻投影装置的机器设置的改变并将其应用于第一光刻投影装置。在示例性应用中，提高了第一和第二光刻投影设备之间与特征误差的任何音调依赖性的匹配。

17. 发明授权

US08164741B2 Lithographic apparatus and device manufacturing method 失效
标题翻译：平版印刷设备和器件制造方法
公开(公告)号：US08164741B2
公开(公告)日：2012-04-24
申请号：US13103551
申请日：2011-05-09
申请人： Jozef Maria Finders
发明人： Jozef Maria Finders
IPC分类号： G03B27/72 , G03B27/54
CPC分类号： G03F7/70891 , G03F7/70258 , G03F7/70308
摘要： A lithographic apparatus includes a phase adjuster to adjust a phase of an optical wave traversing an optical element of the phase adjuster during exposure of a pattern on a substrate. In an embodiment, the optical element is a heat controllable optical element in a projection system of the lithographic apparatus. In use, the pattern is illuminated with an illumination mode including an off-axis radiation beam. This beam is diffracted into zeroth-order and first-order diffracted beams oppositely and asymmetrically inclined with respect to an optical axis. An area is identified where the first-order diffracted beam traverses the optical element. An image characteristic of an image of the pattern is optimized by calculating a desired optical phase of the first-order diffracted beam in relation to the optical phase of the zeroth-order diffracted beam. The phase adjuster is controlled to apply the desired optical phase to the first order diffracted beam.
摘要翻译：光刻设备包括相位调节器，用于在曝光基板上的图案时调节穿过相位调节器的光学元件的光波的相位。在一个实施例中，光学元件是光刻设备的投影系统中的热可控光学元件。在使用中，用包括离轴辐射束的照明模式照亮图案。该光束被衍射成相对于光轴相对和不对称倾斜的零级和一级衍射光束。识别出一级衍射光束穿过光学元件的区域。通过相对于零级衍射光束的光学相位计算一级衍射光束的期望的光学相位来优化图案的图像的图像特性。控制相位调节器以将期望的光学相位施加到一阶衍射光束。

18. 发明申请

US20100310836A1 LITHOGRAPHIC METHOD AND ARRANGEMENT 失效
标题翻译： LITHOGRAPHIC方法和布置
公开(公告)号：US20100310836A1
公开(公告)日：2010-12-09
申请号：US12760983
申请日：2010-04-15
申请人： Pioter Nikolski , Jozef Maria Finders , Remco Jochem Sebastiaan Groenendijk
发明人： Pioter Nikolski , Jozef Maria Finders , Remco Jochem Sebastiaan Groenendijk
IPC分类号： B32B3/10 , G03B27/52 , G03F7/20
CPC分类号： G03F7/70641 , G03F7/40 , G03F7/70533 , H01L21/0274 , H01L21/0337 , H01L21/0338
摘要： A lithographic method includes exposing a first layer of material to a radiation beam to form a first pattern feature in the first layer, the first pattern feature having sidewalls, and a focal property of the radiation beam being controlled to control a sidewall angle of the sidewalls; providing a second layer of material over the first pattern feature to provide a coating on sidewalls of the first pattern; removing a portion of the second layer, leaving a coating of the second layer of material on sidewalls of the first pattern; removing the first pattern formed from the first layer, leaving on the substrate at least a part of the second layer that formed a coating on sidewalls of that first pattern, the part of the second layer left forming second pattern features in locations adjacent to the locations of sidewalls of the removed first pattern feature.
摘要翻译：光刻方法包括将第一层材料暴露于辐射束以在第一层中形成第一图案特征，第一图案特征具有侧壁，并且辐射束的焦点特性被控制以控制侧壁的侧壁角 ; 在所述第一图案特征上提供第二层材料以在所述第一图案的侧壁上提供涂层; 去除所述第二层的一部分，在所述第一图案的侧壁上留下所述第二材料层的涂层; 去除由第一层形成的第一图案，在衬底上留下在第一图案的侧壁上形成涂层的第二层的至少一部分，第二层的部分在与位置相邻的位置中形成第二图案的去除的第一图案特征的侧壁。

19. 发明授权

US07811746B2 Method of patterning a positive tone resist layer overlaying a lithographic substrate 有权
标题翻译：图案化叠加光刻基板的正色调抗蚀剂层的方法
公开(公告)号：US07811746B2
公开(公告)日：2010-10-12
申请号：US11527732
申请日：2006-09-27
申请人： Jozef Maria Finders
发明人： Jozef Maria Finders
IPC分类号： H01L21/00 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70433
摘要： A single exposure method and a double exposure method for reducing mask error factor and for enhancing lithographic printing-process resolution is presented. The invention comprises decomposing a desired pattern of dense lines and spaces in two sub patterns of semi-dense spaces that are printed in interlaced position with respect to each other, using positive tone resist. Each of the exposures is executed after applying a relative space-width widening to the spaces of two corresponding patterning device patterns of semi-dense spaces. A factor representative for the space-width widening has a value between 1 and 3, thereby reducing mask error factor and line edge roughness.
摘要翻译：提出了一种减少掩模误差因子和增强平版印刷工艺分辨率的单一曝光方法和双曝光方法。本发明包括使用正色调抗蚀剂分解以相互间隔开的位置打印的半密度空间的两个子图案中的所需图案的致密线和空间。在将相对空间宽度加宽到半密集空间的两个对应的图案形成装置图案的空间之后执行每个曝光。代表空间宽度加宽的因子具有1到3之间的值，从而减少掩模误差因子和线边缘粗糙度。

20. 发明申请

US20090296060A1 LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权
标题翻译： LITHOGRAPHIC装置和装置制造方法
公开(公告)号：US20090296060A1
公开(公告)日：2009-12-03
申请号：US12476044
申请日：2009-06-01
申请人： Jozef Maria Finders
发明人： Jozef Maria Finders
IPC分类号： G03B27/52 , G03B27/32
CPC分类号： G03F7/70891 , G03F7/70258 , G03F7/70308
摘要： A lithographic apparatus includes a phase adjuster to adjust a phase of an optical wave traversing an optical element of the phase adjuster during exposure of a pattern on a substrate. In an embodiment, the optical element is a heat controllable optical element in a projection system of the lithographic apparatus. In use, the pattern is illuminated with an illumination mode including an off-axis radiation beam. This beam is diffracted into zeroth-order and first-order diffracted beams oppositely and asymmetrically inclined with respect to an optical axis. An area is identified where the first-order diffracted beam traverses the optical element. An image characteristic of an image of the pattern is optimized by calculating a desired optical phase of the first-order diffracted beam in relation to the optical phase of the zeroth-order diffracted beam. The phase adjuster is controlled to apply the desired optical phase to the first order diffracted beam.
摘要翻译：光刻设备包括相位调节器，用于在曝光基板上的图案时调节穿过相位调节器的光学元件的光波的相位。在一个实施例中，光学元件是光刻设备的投影系统中的热可控光学元件。在使用中，用包括离轴辐射束的照明模式照亮图案。该光束被衍射成相对于光轴相对和不对称倾斜的零级和一级衍射光束。识别出一级衍射光束穿过光学元件的区域。通过相对于零级衍射光束的光学相位计算一级衍射光束的期望的光学相位来优化图案的图像的图像特性。控制相位调节器以将期望的光学相位施加到一阶衍射光束。

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