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11. 发明授权

US08070926B2 Multi-chamber workpiece processing 有权
标题翻译：多室工件加工
公开(公告)号：US08070926B2
公开(公告)日：2011-12-06
申请号：US12842931
申请日：2010-07-23
申请人： Thomas Patrick Nolan , Jeffrey Shane Reiter
发明人： Thomas Patrick Nolan , Jeffrey Shane Reiter
IPC分类号： C23C14/00 , C23C16/00 , C23F1/00
CPC分类号： C23C14/568
摘要： A multi-chamber treatment/processing apparatus includes: a means for controlling/regulating operation of the apparatus providing the following operational sequence: performing a treatment/processing of at least one magnetic and/or magneto-optical disk in treatment/processing chambers, while each inlet gate and each outlet gate of each treatment/processing chamber is in a closed position and gas is exhausted from each buffer/isolation chamber; opening each of the inlet and outlet gates of each of the treatment/processing chambers and transporting the at least one magnetic and/or magneto-optical disk therein to the adjacent buffer/isolation chamber; closing the outlet gate of each of the treatment/processing chambers; transporting each of the magnetic and/or magneto-optical disk through a respective buffer/isolation chamber and initiating a flow of a respective gas to each treatment/processing chamber; and closing the inlet gate of each treatment/processing chamber immediately upon completion of entry of the at least one magnetic and/or magneto-optical disk into the respective treatment/processing chamber.
摘要翻译：多室处理/处理装置包括：用于控制/调节装置的操作的装置，其提供以下操作顺序：在处理/处理室中执行至少一个磁光盘和/或磁光盘的处理/处理，同时每个处理/处理室的每个入口门和每个出口门处于关闭位置，并且从每个缓冲/隔离室排出气体; 打开每个处理/处理室的每个入口和出口门，并将其中的至少一个磁性和/或磁光盘传送到相邻的缓冲器/隔离室; 关闭每个处理/处理室的出口门; 通过相应的缓冲/隔离室传送磁和/或磁光盘中的每一个并且启动相应气体流到每个处理/处理室; 并且在完成将至少一个磁光盘和/或磁光盘进入相应的处理/处理室之后立即关闭每个处理/处理室的入口门。

12. 发明授权

US06835290B2 System and method for controlling thin film defects 有权
标题翻译：控制薄膜缺陷的系统和方法
公开(公告)号：US06835290B2
公开(公告)日：2004-12-28
申请号：US10366934
申请日：2003-02-13
申请人： Jeffrey Shane Reiter , Stephen Eric Barlow , Zhiwei Cai
发明人： Jeffrey Shane Reiter , Stephen Eric Barlow , Zhiwei Cai
IPC分类号： C23C1434
CPC分类号： C23C14/3421 , C23C14/0605 , C23C14/352 , H01J37/3405
摘要： A system and method for reducing and controlling the number of defects due to carbon inclusions on magnetic media is disclosed. A diamond like carbon protective layer is deposited on magnetic media using a rotary cathode target assembly. The target and cathode are cylindrical in shape and are mounted on holder that allows the target and cathode to rotate while holding a magnet fixed. The target surface is periodically swept in through a plasma which sputters off the surface of the target. This prevents the build up of redeposited material on the target and consequently keeps the target surface cleaner. The reduction of redeposited material on the target surface reduces the number of unwanted particulates which are ejected from the surface, manifesting themselves as disk defects.
摘要翻译：公开了一种用于减少和控制由磁性介质上的碳夹杂物引起的缺陷数量的系统和方法。使用旋转阴极靶组件将磁性碳保护层沉积在磁性介质上。目标和阴极是圆柱形的，并且安装在保持器上，允许目标和阴极旋转同时保持固定的磁体。目标表面周期性地通过从靶表面喷出的等离子体扫过。这样可以防止再沉积的材料在目标上堆积，从而使目标表面更清洁。目标表面上再沉积材料的还原减少了从表面喷出的不需要的颗粒数，表现为磁盘缺陷。

13. 发明授权

US07837836B2 Method and apparatus for multi-stage sputter deposition of uniform thickness layers 有权
标题翻译：用于均匀厚度层的多级溅射沉积的方法和装置
公开(公告)号：US07837836B2
公开(公告)日：2010-11-23
申请号：US10776203
申请日：2004-02-12
申请人： Rajiv Yadav Ranjan , Jeffrey Shane Reiter , Thomas Patrick Nolan
发明人： Rajiv Yadav Ranjan , Jeffrey Shane Reiter , Thomas Patrick Nolan
IPC分类号： C23C14/35
CPC分类号： G11B5/851 , C23C14/165 , C23C14/185 , C23C14/205 , C23C14/352 , C23C14/568
摘要： A method of forming a uniform thickness layer of a selected material on a surface of a substrate comprises steps of: (a) providing a multi-stage cathode sputtering apparatus comprising a group of spaced-apart cathode/target assemblies and a means for transporting at least one substrate/workpiece past each cathode/target assembly, each cathode/target assembly comprising a sputtering surface oriented substantially parallel to the first surface of the substrate during transport past the group of cathode/target assemblies, the group of cathode/target assemblies adapted for providing different angular sputtered film thickness profiles; and (b) transporting the substrate past each cathode/target assembly while providing different sputtered film thickness profiles from at least some of the cathode/target assemblies, such that a plurality of sub-layers is deposited on the surface of the substrate/workpiece which collectively form a uniform thickness layer of the selected material.
摘要翻译：在衬底的表面上形成选定材料的均匀厚度层的方法包括以下步骤：（a）提供多级阴极溅射装置，其包括一组间隔开的阴极/靶组件和用于在每个阴极/目标组件包括溅射表面，每个阴极/靶组件包括溅射表面，该溅射表面在输送通过阴极/靶组件组之前基本上平行于衬底的第一表面定向，该阴极/靶组件适于用于提供不同的角溅射膜厚度轮廓; 并且（b）将衬底传送通过每个阴极/靶组件，同时从至少一些阴极/靶组件提供不同的溅射膜厚度分布，使得多个子层沉积在衬底/工件的表面上，共同形成所选材料的均匀厚度层。

14. 发明授权

US07780821B2 Multi-chamber processing with simultaneous workpiece transport and gas delivery 有权
标题翻译：多室加工，同时工件运输和气体输送
公开(公告)号：US07780821B2
公开(公告)日：2010-08-24
申请号：US10902960
申请日：2004-08-02
申请人： Thomas Patrick Nolan , Jeffrey Shane Reiter
发明人： Thomas Patrick Nolan , Jeffrey Shane Reiter
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： C23C14/568
摘要： A method for treating/processing substrates/workpieces in a multi-chamber treatment/processing apparatus, comprising: providing a multi-chamber treatment/processing apparatus comprising at least a pair of operatively interconnected upstream and downstream treatment/processing chambers; providing each of the chambers with at least one substrate/workpiece; treating/processing the at least one substrate/workpiece positioned in each of the chambers; evacuating process gas from each of the chambers during or upon completion of the treating/processing of the at least one substrate/workpiece positioned therein; removing the at least one substrate/workpiece from the downstream treatment/processing chamber and initiating transport of the at least one substrate/workpiece from the upstream treatment/processing chamber to the downstream treatment/processing chamber, comprising initiating a flow of the process gas to the evacuated downstream treatment/processing chamber prior to completion of transport of the substrate/workpiece.
摘要翻译：一种用于在多室处理/处理设备中处理/处理基板/工件的方法，包括：提供包括至少一对可操作地连接的上游和下游处理/处理室的多室处理/处理设备; 为每个室提供至少一个基板/工件; 处理/处理位于每个室中的至少一个基板/工件; 在处理/处理位于其中的至少一个基板/工件的期间或完成时，从每个室抽空处理气体; 从所述下游处理/处理室移除所述至少一个基板/工件，并且启动所述至少一个基板/工件从所述上游处理/处理室传送到所述下游处理/处理室，包括启动所述工艺气体流在完成基板/工件的运输之前的抽空的下游处理/处理室。

15. 发明申请

US20090255808A1 TARGET FOR EFFICIENT USE OF PRECIOUS DEPOSITION MATERIAL 审中-公开
标题翻译：有效利用重金属沉积物质的目标
公开(公告)号：US20090255808A1
公开(公告)日：2009-10-15
申请号：US12420952
申请日：2009-04-09
申请人： Jeffrey Shane Reiter
发明人： Jeffrey Shane Reiter
IPC分类号： C23C14/35
CPC分类号： C23C14/3414 , C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3423 , H01J37/3435
摘要： Aspects comprise sputtering targets comprising a base material carrier provided with a recessed pattern, such as a looping trench, to receive a more precious material to be sputtered during deposition processes. The looping trench can have a cross-section of varying depth based on an expected variation in the magnetic field. The more precious material is provided at least in the trench, for example by hot pressing, and also can be pressed into a layer across an entirety of a surface of the carrier. During operation, the desired deposition of the precious material can occur from the trench area. Thus, a higher percentage of the precious material in the target is used, reducing inventory costs. The base material can be selected based on characteristics of the more precious material, and based on goals including reducing diffusion of base material into precious material and galvanic reactions.
摘要翻译：方面包括溅射靶，其包括设置有凹陷图案的基底材料载体，例如环形沟槽，以在沉积工艺期间接收更多的贵重材料被溅射。基于磁场的预期变化，环形沟槽可具有不同深度的横截面。至少在沟槽中提供更珍贵的材料，例如通过热压，并且还可以压入穿过载体的整个表面的层中。在操作期间，期望的沉积贵金属可以从沟槽区域发生。因此，使用目标中贵重材料的较高比例，降低库存成本。可以基于更贵的材料的特性，并且基于包括减少基材扩散到贵重材料和电偶反应的目标来选择基材。

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