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11. 发明授权

US07821822B2 Read/write elements for a three-dimensional magnetic memory 有权
标题翻译：用于三维磁记忆体的读/写元件
公开(公告)号：US07821822B2
公开(公告)日：2010-10-26
申请号：US12191956
申请日：2008-08-14
申请人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
发明人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , G11C5/02 , G11C11/1675 , H01L27/228
摘要： Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
摘要翻译：公开了用于三维磁存储器的读/写元件。一个实施例描述了集成读/写元件的阵列。阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。第一写入导体和第二写入导体在磁极周围形成电流环。

12. 发明授权

US08018765B2 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US08018765B2
公开(公告)日：2011-09-13
申请号：US12553670
申请日：2009-09-03
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

13. 发明授权

US07606065B2 Three-dimensional magnetic memory having bits transferrable between storage layers 有权
标题翻译：具有可在存储层之间传送的位的三维磁存储器
公开(公告)号：US07606065B2
公开(公告)日：2009-10-20
申请号：US12116111
申请日：2008-05-06
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

14. 发明授权

US07317596B2 Magnetic recording disk drive having read head with high cross-track resolution and disk with low bit-aspect-ratio 失效
标题翻译：磁记录磁盘驱动器，具有高交叉磁道分辨率的读头和低比特宽比的磁盘
公开(公告)号：US07317596B2
公开(公告)日：2008-01-08
申请号：US11158444
申请日：2005-06-21
申请人： Thomas R. Albrecht , Robert E. Fontana, Jr. , Ching Hwa Tsang , Mason L. Williams , Bruce Alexander Wilson
发明人： Thomas R. Albrecht , Robert E. Fontana, Jr. , Ching Hwa Tsang , Mason L. Williams , Bruce Alexander Wilson
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/3903 , G11B5/743 , G11B5/855 , G11B2005/3996
摘要： A continuous-media or patterned-media disk drive with a low ratio of linear bit density in bits per inch (BPI) in the along-the-track direction to track density in tracks per inch (TPI) in the cross-track direction has a magnetoresistive read head with high cross-track spatial resolution. The read head is located between two magnetic shields, with the shields and read head formed on a side surface of the head carrier perpendicular to the carrier's disk-facing surface. The carrier is supported by the disk drive actuator with the side surface of the carrier oriented generally parallel to the data tracks. In this arrangement the high-spatial-resolution direction of the read head (the transverse direction perpendicular to the side surface on which the head is formed) is in the radial or cross-track direction.
摘要翻译：在轨道方向上沿线方向的线性位密度（以比特/英寸（BPI））为单位的跟踪密度（以每英里轨道（TPI）为单位）的连续介质或图形媒体盘驱动器，具有高交叉轨道空间分辨率的磁阻读头。读取头位于两个磁屏蔽之间，其中屏蔽和读取头形成在头托架的垂直于托架面向盘的表面的侧表面上。载体由磁盘驱动器致动器支撑，其中载体的侧表面大致平行于数据轨道。在这种布置中，读取头的高空间分辨率方向（垂直于形成头部的侧面的横向方向）处于径向或横向方向。

15. 发明授权

US07698807B2 Method of manufacturing a magnetic sensor by multiple depositions of varying geometry 有权
标题翻译：通过不同几何形状的多次沉积制造磁性传感器的方法
公开(公告)号：US07698807B2
公开(公告)日：2010-04-20
申请号：US11337020
申请日：2006-01-20
申请人： Jeffrey Robinson Childress , Robert E. Fontana, Jr. , Jeffrey S. Lille
发明人： Jeffrey Robinson Childress , Robert E. Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/187
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , H01L43/08 , H01L43/12 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048
摘要： Formation of the magnetic sensor layers of a magnetic sensor are separated into at least two depositions to reduce the dimension of the sensor. The free layer portion of the sensor is deposited at a different process step than the pinned layer portion. The top of the free layer stack can be a tunnel barrier, the free layer, or part of the free layer. The free layer stack also may contain an in-stack bias layer. The longitudinal bias layer may be patterned in a separate processing step, which allows the stack containing the free layer to be effectively thinner and allow smaller track width dimensions.
摘要翻译：将磁传感器的磁传感器层的形成分成至少两个沉积物以减小传感器的尺寸。传感器的自由层部分以与被钉扎层部分不同的工艺步骤沉积。自由层堆叠的顶部可以是隧道势垒，自由层或自由层的一部分。自由层堆叠还可以包含堆叠内偏压层。纵向偏置层可以在单独的处理步骤中进行图案化，其允许包含自由层的堆叠被有效地更薄并且允许更小的轨道宽度尺寸。

16. 发明授权

US08169751B2 Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry 失效
标题翻译：具有用于激活和去激活静电放电防止电路的结构的磁阻传感器
公开(公告)号：US08169751B2
公开(公告)日：2012-05-01
申请号：US11426908
申请日：2006-06-27
申请人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
发明人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/40
摘要： A structure for preventing Electrostatic Discharge (LSD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes to solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.
摘要翻译：用于在制造期间防止静电放电（LSD）损坏磁阻传感器的结构。该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。该开关可以是内置在滑块上的热激活机械继电器。开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。电极之一用作阳极。当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。

17. 发明授权

US08102236B1 Thin film inductor with integrated gaps 有权
标题翻译：具有集成间隙的薄膜电感器
公开(公告)号：US08102236B1
公开(公告)日：2012-01-24
申请号：US12968118
申请日：2010-12-14
申请人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Bucknell C. Webb
IPC分类号： H01F5/00
CPC分类号： H01F17/0006 , H01F3/14
摘要： A thin film inductor according to one embodiment includes one or more arms; one or more conductors passing through each arm; a first ferromagnetic yoke wrapping partially around the one or more conductors in a first of the one or more arms, the first ferromagnetic yoke comprising a magnetic top section, a magnetic bottom section, and via regions positioned on opposites sides of the one or more conductors in the first of the one or more arms, wherein the magnetic top section and magnetic bottom section are coupled together through a low reluctance path in the via regions; and one or more non-magnetic gaps between the top section and the bottom section in at least one of the via regions. Additional systems and methods are also provided.
摘要翻译：根据一个实施例的薄膜电感器包括一个或多个臂; 穿过每个臂的一个或多个导体; 所述第一铁磁磁轭围绕所述一个或多个臂中的第一个中的所述一个或多个导体包围，所述第一铁磁轭包括磁性顶部，磁性底部部分和位于所述一个或多个导体的相对侧上的通孔区域在一个或多个臂中的第一个中，其中磁性顶部部分和磁性底部部分通过通孔区域中的低磁阻路径耦合在一起; 以及在至少一个通孔区域中的顶部和底部之间的一个或多个非磁性间隙。还提供了附加的系统和方法。

18. 发明授权

US08070554B2 Distributed shunt structure for lapping of current perpendicular plane (CPP) heads 有权
标题翻译：分布式分流结构，用于研磨电流垂直平面（CPP）头
公开(公告)号：US08070554B2
公开(公告)日：2011-12-06
申请号：US10990926
申请日：2004-11-17
申请人： Robert E. Fontana, Jr. , Neil Leslie Robertson , Huey-Ming Tzeng
发明人： Robert E. Fontana, Jr. , Neil Leslie Robertson , Huey-Ming Tzeng
IPC分类号： B24B49/00
CPC分类号： G11B5/3163 , G11B5/3166 , G11B5/3169 , G11B5/332 , G11B5/3906 , G11B5/40
摘要： An apparatus and method for lapping and fabricating a read/write head is described. The lapping method includes performing a first lapping process on a structure having the read/write head fabricated therein. The first lapping process is for reducing a first resistive region. The first resistive region is located proximal to a surface of the structure. The first lapping process is for achieving a first lapping benchmark. The lapping method further includes performing a second lapping process on a second resistive region. The second lapping process laps at a rate lesser than the first lapping process. The second lapping process is for achieving a second lapping benchmark. The second resistive region is interposed between the first resistive region and the read/write head. The second resistive region has a different resistive value than the second resistive region.
摘要翻译：描述了用于研磨和制造读/写头的装置和方法。研磨方法包括对其中制造读/写头的结构执行第一研磨处理。第一次研磨工艺用于减少第一电阻区域。第一电阻区域位于结构的表面附近。第一个研磨过程是实现第一次研磨基准。研磨方法还包括在第二电阻区域上进行第二研磨处理。第二次研磨过程以比第一次研磨过程低的速度进行。第二次研磨过程是实现第二次研磨基准。第二电阻区域介于第一电阻区域和读/写头之间。第二电阻区域具有与第二电阻区域不同的电阻值。

19. 发明授权

US07016167B2 Spin valve transistor with stabilization and method for producing the same 失效
标题翻译：具有稳定性的旋转阀晶体管及其制造方法
公开(公告)号：US07016167B2
公开(公告)日：2006-03-21
申请号：US10406779
申请日：2003-04-03
申请人： Robert E. Fontana, Jr. , Jeffrey S. Lille
发明人： Robert E. Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/127
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3932 , G11B2005/0008 , G11B2005/3996 , H01F41/302 , H01F41/325 , H01L29/66984 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
摘要翻译：自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的绝缘层，与绝缘层相邻的偏置层，邻近偏置层的非磁性层，以及铁磁层非磁性层，其中绝缘层和非磁性层包括反铁磁材料。磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。偏置层位于绝缘层和非磁性层之间。偏置层是磁性的，并且是基极区域中的磁性材料的厚度的至少三倍。

20. 发明授权

US06778364B2 Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效
标题翻译：具有具有非磁性氧化物中心区域的纵向偏置层的电流平面内磁阻传感器和用于制造传感器的方法
公开(公告)号：US06778364B2
公开(公告)日：2004-08-17
申请号：US10230903
申请日：2002-08-28
申请人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
发明人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active trackwidth region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.
摘要翻译：电流平面（CIP）巨磁阻（GMR）自旋阀传感器通过使用自由层末端反铁磁交换耦合的纵向偏置使其自由层磁化稳定。在自由层上形成诸如Ru的反平行耦合（APC）层，并且在APC层上形成铁磁偏置层。偏置层是在自由层的整个宽度上延伸的连续层。偏置层的中心区域由构成偏置层的一个或多个元件的非磁性氧化物形成，偏置层端部区域保持铁磁性。偏置层的氧化中心区域定义了下层自由层的中心主动轨道宽度区域。偏置层的铁磁端区域跨越APC层反铁磁耦合到相应的下游自由层端部区域以提供纵向偏置。

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