专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20080182021A1 Continuous ultra-thin copper film formed using a low thermal budget 审中-公开
标题翻译：使用低热预算形成的连续超薄铜膜
公开(公告)号：US20080182021A1
公开(公告)日：2008-07-31
申请号：US11701301
申请日：2007-01-31
申请人： Harsono S. Simka , Joseph H. Han , Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon
发明人： Harsono S. Simka , Joseph H. Han , Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/45525 , C23C16/45527
摘要： A method for forming a continuous ultra-thin copper layer using a low thermal budget comprises providing a substrate in a reactor, establishing a low first temperature at a surface of the substrate, introducing a copper precursor flow into the reactor to deposit the copper precursor onto the surface, introducing an inert gas flow into the reactor after the copper precursor flow, increasing the temperature at the surface of the substrate to a second temperature during the inert gas flow, and performing a chemical vapor deposition process at the second temperature to deposit a copper layer on the substrate.
摘要翻译：使用低热预算形成连续超薄铜层的方法包括在反应器中提供衬底，在衬底的表面上建立低的第一温度，将铜前体流引入反应器以将铜前体沉积到所述表面在所述铜前体流动之后将惰性气体流引入所述反应器，在所述惰性气体流动期间将所述基板的表面处的温度升高到第二温度，并且在所述第二温度下进行化学气相沉积工艺以沉积铜层在基板上。

12. 发明申请

US20080157212A1 Tunable gate electrode work function material for transistor applications 有权
标题翻译：晶体管应用的可调栅电极功能材料
公开(公告)号：US20080157212A1
公开(公告)日：2008-07-03
申请号：US11647893
申请日：2006-12-28
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L27/092 , H01L21/8238 , H01L21/28
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译：这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。

13. 发明授权

US08425987B2 Surface charge enhanced atomic layer deposition of pure metallic films 有权
标题翻译：表面电荷增强纯金属薄膜的原子层沉积
公开(公告)号：US08425987B2
公开(公告)日：2013-04-23
申请号：US12347940
申请日：2008-12-31
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Harsono S. Simka
IPC分类号： C23C8/00 , C23C16/00
CPC分类号： C23C16/45536 , C23C16/18 , C23C16/44 , C23C16/45525 , C23C16/4581 , C23C16/487
摘要： A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge.
摘要翻译：一种方法，包括向腔室中的基板施加电荷; 将有机金属取代基引入室中，有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。一种方法，包括将可移除的电荷施加到基底上; 在所施加的电荷的存在下，将有机金属取代基引入室中，所述有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。一种包括将有机金属取代基引入到室中的方法，包括金属配体和有机配体的有机金属取代基; 以及通过用外部施加的电荷还原有机金属取代基的金属配体来沉积金属膜。

14. 发明申请

US20120074571A1 METHODS AND ARCHITECTURES FOR BOTTOMLESS INTERCONNECT VIAS 有权
标题翻译：无缝互连六角形的方法和结构
公开(公告)号：US20120074571A1
公开(公告)日：2012-03-29
申请号：US12889790
申请日：2010-09-24
申请人： Adrien R. Lavoie
发明人： Adrien R. Lavoie
IPC分类号： H01L23/532 , H01L23/48 , H01L21/768
CPC分类号： H01L21/76844 , H01L21/2855 , H01L21/32131 , H01L21/76805 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L23/53295 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An apparatus includes an interconnect in a recess. The interconnect includes a liner structure and the liner structure in the recess. The liner structure is breached at the recess bottom feature and a bottom interconnect makes a single-interface contact with a subsequent interconnect through the breach.
摘要翻译：一种装置包括在凹槽中的互连。互连件包括衬垫结构和凹部中的衬垫结构。衬垫结构在凹陷底部特征处被破坏，并且底部互连件通过突破而与随后的互连件进行单接口接触。

15. 发明授权

US08012878B2 Atomic layer volatilization process for metal layers 有权
标题翻译：金属层的原子层挥发过程
公开(公告)号：US08012878B2
公开(公告)日：2011-09-06
申请号：US11772198
申请日：2007-06-30
申请人： Adrien R. Lavoie , Harsono S. Simka
发明人： Adrien R. Lavoie , Harsono S. Simka
IPC分类号： H01L21/302
CPC分类号： H01L21/32133 , H01L21/32115
摘要： A two-stage method to remove a metal layer from a substrate surface comprises using a CMP process to remove a first portion of the metal layer from the substrate surface, and using an ALV process to remove a second portion of the copper layer from the substrate surface. The ALV process comprises pulsing a co-reactant into a reactor housing the substrate, wherein the co-reactant reacts with the metal layer to form a volatile metal-containing product, and then evacuating the reactor to volatize and remove the metal-containing product.
摘要翻译：从基板表面去除金属层的两阶段方法包括使用CMP工艺从基板表面去除金属层的第一部分，并且使用ALV工艺从基板去除铜层的第二部分表面。 ALV方法包括将共反应物脉冲入容纳基质的反应器中，其中共反应物与金属层反应形成含挥发性金属的产物，然后抽空反应器以挥发除去含金属的产物。

16. 发明授权

US07858525B2 Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill 有权
标题翻译：无氟前体和沉积用于纳米互连种子和填充物的共形导电膜的方法
公开(公告)号：US07858525B2
公开(公告)日：2010-12-28
申请号：US11694677
申请日：2007-03-30
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka , Bryan C. Hendrix , Gregory T. Stauf
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka , Bryan C. Hendrix , Gregory T. Stauf
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/32056 , H01L21/76861 , H01L21/76873
摘要： A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.
摘要翻译：一种包括在基材存在下引入无氟有机金属前体的方法; 以及根据原子层或化学气相沉积工艺在所述衬底上形成包括所述有机金属前体的部分的导电层。一种包括通过电介质层形成开口到接触点的方法; 引入无氟铜膜前体和共反应物; 并在开口中形成含铜种子层。一种包括计算机的系统，所述计算机包括电耦合到印刷电路板的微处理器，所述微处理器包括由无氟有机金属前体形成的导电互连结构。

17. 发明授权

US07842983B2 Boundaries with elevated deuterium levels 有权
标题翻译：氘浓度升高的边界
公开(公告)号：US07842983B2
公开(公告)日：2010-11-30
申请号：US12215250
申请日：2008-06-26
申请人： Ashutosh Ashutosh , Huicheng Chang , Adrien R. Lavoie , Aaron A. Budrevich
发明人： Ashutosh Ashutosh , Huicheng Chang , Adrien R. Lavoie , Aaron A. Budrevich
IPC分类号： H01L29/76
CPC分类号： H01L21/3003 , H01L21/26506 , H01L29/665
摘要： A device is annealed in a deuterium atmosphere. Deuterium penetrates the device to a boundary, which is passivated by the deuterium.
摘要翻译：器件在氘气氛中退火。氘渗透到边界，被氘钝化。

18. 发明授权

US07682891B2 Tunable gate electrode work function material for transistor applications 有权
标题翻译：晶体管应用的可调栅电极功能材料
公开(公告)号：US07682891B2
公开(公告)日：2010-03-23
申请号：US11647893
申请日：2006-12-28
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L29/78
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译：这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。

19. 发明申请

US20090209777A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20090209777A1
公开(公告)日：2009-08-20
申请号：US12352256
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： C07F17/02
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及具有式（L1）M（L2）y的有机金属化合物，其中M是金属或准金属，L1是取代或未取代的阴离子6电子供体配体，L2相同或不同，为（i）取代的或未取代的阴离子2电子供体配体，（ii）取代或未取代的阴离子4电子供体配体，（iii）取代或未取代的中性2电子供体配体，或（iv）取代或未取代的具有侧基的阴离子4电子给体配体中性2电子供体部分; y为1〜3的整数，并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法，以及由有机金属化合物制备薄膜或涂层的方法。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

20. 发明申请

US20090200524A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090200524A1
公开(公告)日：2009-08-13
申请号：US12352186
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： H01B1/12 , C07F17/02
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式