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11. 发明授权

US08359758B2 Circuit for calculating a three-dimensional inclination angle 有权
标题翻译：用于计算三维倾斜角的电路
公开(公告)号：US08359758B2
公开(公告)日：2013-01-29
申请号：US12672997
申请日：2008-04-15
申请人： Sung Sik Lee , Myung Lae Lee , Chang Han Je , Gunn Hwang , Chang Auck Choi
发明人： Sung Sik Lee , Myung Lae Lee , Chang Han Je , Gunn Hwang , Chang Auck Choi
IPC分类号： G01C9/00
CPC分类号： G01C9/00 , G01C9/06
摘要： A three-dimensional inclination angle calculation circuit is provided. The three-dimensional inclination angle calculation circuit includes: X-axis, Y-axis, and Z-axis vibration sensors which change X-axis, Y-axis, and Z-axis electrostatic capacitances according to three-dimensional positions of a measured plane with respect to a reference plane, respectively; X-axis, Y-axis, and Z-axis position value acquisition units which acquire X-axis, Y-axis, and Z-axis position values corresponding to the X-axis, Y-axis, and Z-axis electrostatic capacitances, respectively; and an inclination angle calculation unit which calculates an inclination angle of the measured plane with respect to the reference plane based on the X-axis, Y-axis, and Z-axis position values. Accordingly, it is possible to very easily calculate an inclination angle according to a three-dimensional position of a to-be-measured apparatus by using an existing vibration sensor.
摘要翻译：提供三维倾斜角计算电路。三维倾斜角计算电路包括：根据测量平面的三维位置改变X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴振动传感器分别相对于参考平面; 获取对应于X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴位置值的X轴，Y轴和Z轴位置值获取单元，分别; 以及倾斜角计算单元，其基于X轴，Y轴和Z轴位置值计算测量平面相对于参考平面的倾斜角度。因此，通过使用现有的振动传感器，可以非常容易地计算出被测量装置的三维位置的倾斜角度。

12. 发明申请

US20130094675A1 MEMS MICROPHONE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译： MEMS麦克风及其制造方法
公开(公告)号：US20130094675A1
公开(公告)日：2013-04-18
申请号：US13601896
申请日：2012-08-31
申请人： Chang Han Je , Jaewoo Lee , Woo Seok Yang , Jongdae Kim
发明人： Chang Han Je , Jaewoo Lee , Woo Seok Yang , Jongdae Kim
IPC分类号： H04R1/00 , H04R31/00
CPC分类号： H04R1/00 , B81B3/007 , B81B2201/0257 , H04R1/2807 , H04R19/005 , H04R19/04 , H04R31/00 , H04R31/006 , H04R2201/003
摘要： Disclosed are a MEMS microphone and a method of manufacturing the same. The MEMS microphone includes: a substrate; a rear acoustic chamber formed inside a front surface of the substrate; a vibrating plate formed on the substrate and having an exhaust hole; a fixed electrode formed on the vibrating plate; and a fixed electrode support supported by a bottom of the rear acoustic chamber and connected to the fixed electrode through the exhaust hole.
摘要翻译：公开了一种MEMS麦克风及其制造方法。 MEMS麦克风包括：基板; 形成在所述基板的前表面内的后声室; 形成在所述基板上并具有排气孔的振动板; 形成在振动板上的固定电极; 以及由后声室的底部支撑并通过排气孔连接到固定电极的固定电极支撑件。

13. 发明授权

US08319397B2 Piezoelectric power generator 有权
标题翻译：压电发电机
公开(公告)号：US08319397B2
公开(公告)日：2012-11-27
申请号：US12862577
申请日：2010-08-24
申请人： Sang Choon Ko , Chang Han Je , Ho Jun Ryu , Sung Sik Lee , Chi Hoon Jun
发明人： Sang Choon Ko , Chang Han Je , Ho Jun Ryu , Sung Sik Lee , Chi Hoon Jun
IPC分类号： H01L41/08
CPC分类号： H01L41/1138 , B60C23/0411 , H01L41/1136 , H02N2/186
摘要： Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode.
摘要翻译：提供了一种应用于轮胎压力监测系统（TPMS）的无线传感器网络系统的小型压电发电机，用于监测轮胎的内部环境，例如轮胎中的空气压力的变化。特别地，当安装在轮胎中的气压，温度和加速度传感器的系统在用于汽车的TPMS中运行时，用于TPMS的小压电发电机可以用作电源来代替常规电池。压电发电机包括具有用于向外部传输电力的电极的基板，形成在基板上的金属板，以及设置在金属板上并将由压电材料产生的电力传递到电极的压电体。

14. 发明授权

US07997137B2 Bidirectional readout circuit for detecting direction and amplitude of capacitive MEMS accelerometers 有权
标题翻译：用于检测电容MEMS加速度计的方向和振幅的双向读出电路
公开(公告)号：US07997137B2
公开(公告)日：2011-08-16
申请号：US12168025
申请日：2008-07-03
申请人： Sung Sik Lee , Ji Man Park , Myung Lae Lee , Sung Hae Jung , Chang Han Je , Gunn Hwang , Chang Auck Choi
发明人： Sung Sik Lee , Ji Man Park , Myung Lae Lee , Sung Hae Jung , Chang Han Je , Gunn Hwang , Chang Auck Choi
IPC分类号： G01P15/08
CPC分类号： G01P15/125 , G01P13/04
摘要： There is provided a bidirectional readout circuit for detecting direction and amplitude of an oscillation sensed at a capacitive microelectromechanical system (MEMS) accelerometer, the bidirectional readout circuit converting capacitance changes of the capacitive MEMS accelerometer into a time change amount by using high resolution capacitance-to-time conversion technology and outputting the time change amount as the direction and the amplitude of the oscillation by using time-to-digital conversion (TDC) technology, thereby detecting not only the amplitude of the oscillation but also the direction thereof, which is capable of being applied to various MEMS sensors.
摘要翻译：提供了一种用于检测在电容式微机电系统（MEMS）加速度计处感测的振荡的方向和振幅的双向读出电路，双向读出电路通过使用高分辨率电容 - 电容将电容式MEMS加速度计的电容变化转换为时变量时间转换技术，并且通过使用时间 - 数字转换（TDC）技术输出时间变化量作为振荡的方向和振幅，从而不仅检测振荡的振幅，而且检测其方向，这是能够被应用于各种MEMS传感器。

15. 发明申请

US20110192040A1 CIRCUIT FOR CALCULATING A THREE-DIMENSIONAL INCLINATION ANGLE 有权
标题翻译：用于计算三维内插角的电路
公开(公告)号：US20110192040A1
公开(公告)日：2011-08-11
申请号：US12672997
申请日：2008-04-15
申请人： Sung Sik Lee , Myung Lae Lee , Chang Han Je , Gunn Hwang , Chang Auck Choi
发明人： Sung Sik Lee , Myung Lae Lee , Chang Han Je , Gunn Hwang , Chang Auck Choi
IPC分类号： G01C9/06
CPC分类号： G01C9/00 , G01C9/06
摘要： A three-dimensional inclination angle calculation circuit is provided. The three-dimensional inclination angle calculation circuit includes: X-axis, Y-axis, and Z-axis vibration sensors which change X-axis, Y-axis, and Z-axis electrostatic capacitances according to three-dimensional positions of a measured plane with respect to a reference plane, respectively; X-axis, Y-axis, and Z-axis position value acquisition units which acquire X-axis, Y-axis, and Z-axis position values corresponding to the X-axis, Y-axis, and Z-axis electrostatic capacitances, respectively; and an inclination angle calculation unit which calculates an inclination angle of the measured plane with respect to the reference plane based on the X-axis, Y-axis, and Z-axis position values. Accordingly, it is possible to very easily calculate an inclination angle according to a three-dimensional position of a to-be-measured apparatus by using an existing vibration sensor.
摘要翻译：提供三维倾斜角计算电路。三维倾斜角计算电路包括：根据测量平面的三维位置改变X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴振动传感器分别相对于参考平面; 获取对应于X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴位置值的X轴，Y轴和Z轴位置值获取单元，分别; 以及倾斜角计算单元，其基于X轴，Y轴和Z轴位置值计算测量平面相对于参考平面的倾斜角度。因此，通过使用现有的振动传感器，可以非常容易地计算出被测量装置的三维位置的倾斜角度。

16. 发明申请

US20110186089A1 APPARATUS FOR PREVENTING STICTION OF MEMS MICROSTRUCTURE 有权
标题翻译：防止MEMS微结构的装置
公开(公告)号：US20110186089A1
公开(公告)日：2011-08-04
申请号：US12672993
申请日：2008-04-14
申请人： Chang Han Je , Myung Lae Lee , Sung Hae Jung , Gunn Hwang , Chang Auck Choi
发明人： Chang Han Je , Myung Lae Lee , Sung Hae Jung , Gunn Hwang , Chang Auck Choi
IPC分类号： B08B3/00
CPC分类号： B81B3/001 , B81C2201/115
摘要： An apparatus for preventing stiction of a three-dimensional MEMS (microelectromechanical system) microstructure, the apparatus including: a substrate; and a plurality of micro projections formed on a top surface of the substrate with a predetermined height in such a way that a cleaning solution flowing out from the microstructure disposed thereabove is discharged.
摘要翻译：一种用于防止三维MEMS（微机电系统）微结构静止的装置，该装置包括：基板; 以及多个微型突起以预定的高度形成在基板的顶表面上，使得从布置在其上方的微结构流出的清洗溶液被排出。

17. 发明授权

US07975550B2 Micromachined sensor for measuring vibration 失效
标题翻译：用于测量振动的微加工传感器
公开(公告)号：US07975550B2
公开(公告)日：2011-07-12
申请号：US12111841
申请日：2008-04-29
申请人： Myung Lae Lee , Chang Han Je , Sung Sik Lee , Sung Hae Jung , Chang Auck Choi , Gunn Hwang
发明人： Myung Lae Lee , Chang Han Je , Sung Sik Lee , Sung Hae Jung , Chang Auck Choi , Gunn Hwang
IPC分类号： G01N29/00 , G01P15/10
CPC分类号： G01H11/02
摘要： There is provided a micromachined sensor for measuring a vibration, based on silicone micromachining technology, in which a conductor having elasticity is connected to masses moving due to a force generated by the vibration and the vibration is measured by using induced electromotive force generated due to the conductor moving in a magnetic field.
摘要翻译：提供了一种用于测量振动的微机械传感器，其基于有机硅微加工技术，其中具有弹性的导体由于由振动产生的力连接到质量移动，并且通过使用由于振动产生的感应电动势来测量振动导体在磁场中移动。

18. 发明授权

US08613287B2 Apparatus for preventing stiction of MEMS microstructure 有权
标题翻译：用于防止MEMS微结构静止的装置
公开(公告)号：US08613287B2
公开(公告)日：2013-12-24
申请号：US12672993
申请日：2008-04-14
申请人： Chang Han Je , Myung Lae Lee , Sung Hae Jung , Gunn Hwang , Chang Auck Choi
发明人： Chang Han Je , Myung Lae Lee , Sung Hae Jung , Gunn Hwang , Chang Auck Choi
IPC分类号： B08B3/00
CPC分类号： B81B3/001 , B81C2201/115
摘要： An apparatus for preventing stiction of a three-dimensional MEMS (microelectromechanical system) microstructure, the apparatus including: a substrate; and a plurality of micro projections formed on a top surface of the substrate with a predetermined height in such a way that a cleaning solution flowing out from the microstructure disposed thereabove is discharged.
摘要翻译：一种用于防止三维MEMS（微机电系统）微结构静止的装置，该装置包括：基板; 以及多个微型突起以预定的高度形成在基板的顶表面上，使得从布置在其上方的微结构流出的清洗溶液被排出。

19. 发明申请

US20120098076A1 ACOUSTIC SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：声学传感器及其制造方法
公开(公告)号：US20120098076A1
公开(公告)日：2012-04-26
申请号：US13012489
申请日：2011-01-24
申请人： Jaewoo LEE , Chang Han Je , Woo Seok Yang , Jongdae Kim
发明人： Jaewoo LEE , Chang Han Je , Woo Seok Yang , Jongdae Kim
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： H04R31/00 , H04R19/005 , H04R19/02
摘要： Provided is an acoustic sensor. The acoustic sensor includes: a substrate including sidewall portions and a bottom portion extending from a bottom of the sidewall portions; a lower electrode fixed at the substrate and including a concave portion and a convex portion, the concave portion including a first hole on a middle region of the bottom, the convex portion including a second hole on an edge region of the bottom; diaphragms facing the concave portion of the lower electrode, with a vibration space therebetween; diaphragm supporters provided on the lower electrode at a side of the diaphragm and having a top surface having the same height as the diaphragm; and an acoustic chamber provided in a space between the bottom portion and the sidewall portions below the lower electrode.
摘要翻译：提供了一种声学传感器。声学传感器包括：基底，其包括侧壁部分和从侧壁部分的底部延伸的底部部分; 固定在所述基板上的下部电极，具有凹部和凸部，所述凹部包括在所述底部的中间区域的第一孔，所述凸部包括在所述底部的边缘区域上的第二孔; 隔膜面向下电极的凹部，其间具有振动空间; 隔膜支撑体设置在隔膜侧面的下电极上，具有与隔膜相同高度的顶表面; 以及设置在下部电极下方的底部和侧壁部之间的空间中的声学室。

20. 发明申请

US20100009514A1 METHOD OF FABRICATING MICRO-VERTICAL STRUCTURE 失效
标题翻译：微观结构的制作方法
公开(公告)号：US20100009514A1
公开(公告)日：2010-01-14
申请号：US12417114
申请日：2009-04-02
申请人： Myung Lae LEE , Jong Hyun Lee , Sung Sik Yun , Dae Hun Jeong , Gunn Hwang , Chang Auck Choi , Chang Han Je , Jae Yong An
发明人： Myung Lae LEE , Jong Hyun Lee , Sung Sik Yun , Dae Hun Jeong , Gunn Hwang , Chang Auck Choi , Chang Han Je , Jae Yong An
IPC分类号： H01L21/306
CPC分类号： B81C1/00619 , B81C1/00626 , B81C2201/0132 , B81C2201/0133
摘要： A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.
摘要翻译：提供一种制造微垂直结构的方法。该方法包括通过插入绝缘层图案和空腔将第二晶体硅（Si）衬底接合到第一晶体Si衬底上，使用沿[111]晶体的深反应离子蚀刻（DRIE）工艺蚀刻第二晶体Si衬底垂直于第二晶体Si衬底，并且使用结晶湿蚀刻工艺蚀刻第二晶体Si衬底的蚀刻垂直表面，以改善蚀刻垂直表面的表面粗糙度和平坦度。结果，蚀刻的垂直表面上没有形成形态缺陷。此外，由于绝缘层图案，在蚀刻终点处不发生基脚。此外，微垂直结构不会浮在空气中，而是固定在第一晶体Si衬底上，从而有助于后续工艺。

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