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11. 发明授权

US08669191B2 Method for forming Ni film 有权
标题翻译：镍膜形成方法
公开(公告)号：US08669191B2
公开(公告)日：2014-03-11
申请号：US13445450
申请日：2012-04-12
申请人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
发明人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/18 , H01L21/28518 , H01L21/28556 , H01L21/28562
摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.
摘要翻译：本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

12. 发明申请

US20120264310A1 METHOD FOR FORMING NI FILM 有权
标题翻译：形成NI膜的方法
公开(公告)号：US20120264310A1
公开(公告)日：2012-10-18
申请号：US13445450
申请日：2012-04-12
申请人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
发明人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
IPC分类号： H01L21/31
CPC分类号： C23C16/18 , H01L21/28518 , H01L21/28556 , H01L21/28562
摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.
摘要翻译：本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

13. 发明申请

US20120031650A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
标题翻译：半导体器件制造方法和半导体器件制造设备
公开(公告)号：US20120031650A1
公开(公告)日：2012-02-09
申请号：US13273612
申请日：2011-10-14
申请人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
发明人： Masanobu Hatanaka , Kanako Tsumagari , Michio Ishikawa
IPC分类号： H05K1/00 , H05K3/30 , H01L21/768
CPC分类号： H01L21/28556 , C23C16/30 , C23C16/45542 , H01L21/28562 , H01L21/76829 , H01L21/76831 , H01L21/76843 , H01L21/76849 , Y10T29/49146 , Y10T29/49162
摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer(11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.
摘要翻译：一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序，在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

14. 发明授权

US07763115B2 Vacuum film-forming apparatus 有权
公开(公告)号：US07763115B2
公开(公告)日：2010-07-27
申请号：US11133437
申请日：2005-05-20
申请人： Masanobu Hatanaka , Michio Ishikawa , Se-Ju Lim , Fumio Nakamura
发明人： Masanobu Hatanaka , Michio Ishikawa , Se-Ju Lim , Fumio Nakamura
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/38 , C23C16/0236 , C23C16/34 , C23C16/44 , C23C16/4405 , C23C16/45525 , C23C16/45536 , C23C16/45551 , C23C16/54 , Y10S414/139
摘要： A vacuum film-forming apparatus comprising substrate stages; vacuum chamber-forming containers opposed to the stages; a means for moving the substrate between the stages; and gas-introduction means connected to every containers, wherein one of the stage and the container is ascended or descended towards the other to bring the upper face of the stage and the opening of the container into contact with one another so that vacuum chambers can be formed and that a raw gas and/or a reactant gas can be introduced into each space of the chamber through each gas-introduction means to carry out either the adsorption or reaction step for allowing the raw gas to react with the reactant gas. The apparatus permits the independent establishment of process conditions for the adsorption and reaction processes and the better acceleration of the reaction between raw and reactant gases to give a film having excellent quality and the apparatus can be manufactured at a low cost.

15. 发明申请

US20100180819A1 FILM-FORMING APPARATUS 有权
标题翻译：电影制作装置
公开(公告)号：US20100180819A1
公开(公告)日：2010-07-22
申请号：US12450265
申请日：2008-04-15
申请人： Masanobu Hatanaka , Osamu Irino , Michio Ishikawa
发明人： Masanobu Hatanaka , Osamu Irino , Michio Ishikawa
IPC分类号： C23C16/50 , C23C16/00 , C23C16/448 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/30 , C23C16/38 , C23C16/452 , C23C16/45574 , H01J37/3244
摘要： In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2n-1 (where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages.
摘要翻译：在使用两种或更多种气体的成膜装置中，形成均匀的膜。在设置有成膜室和喷淋头的成膜装置中，喷头设置有原料气体扩散室和反应性气体扩散室。将原料气体扩散室和原料气体导入管连通的气体通路构成为一级以上的多级。每级具有由2n-1表示的气体通道（其中n是级数）。第一级气体通路与其中心连接有原料气体导入管。第二级和后级气体通道中的每一个连接到设置在前级气体通道两端的中心连接孔，以便与前一级气体通道连通。每个末级气体通过形成在每个气体通道两端的连接孔连接到原料气体扩散室。

16. 发明申请

US20080202423A1 VACUUM FILM-FORMING APPARATUS 有权
标题翻译：真空成膜装置
公开(公告)号：US20080202423A1
公开(公告)日：2008-08-28
申请号：US12111698
申请日：2008-04-29
申请人： Masanobu HATANAKA , Michio Ishikawa , Se-Ju Lim , Fumio Nakamura
发明人： Masanobu HATANAKA , Michio Ishikawa , Se-Ju Lim , Fumio Nakamura
IPC分类号： C23C16/50
CPC分类号： C23C16/38 , C23C16/0236 , C23C16/34 , C23C16/44 , C23C16/4405 , C23C16/45525 , C23C16/45536 , C23C16/45551 , C23C16/54 , Y10S414/139
摘要： A vacuum film-forming apparatus comprising substrate stages; vacuum chamber-forming containers opposed to the stages; a means for moving the substrate between the stages; and gas-introduction means connected to every containers, wherein one of the stage and the container is ascended or descended towards the other to bring the upper face of the stage and the opening of the container into contact with one another so that vacuum chambers can be formed and that a raw gas and/or a reactant gas can be introduced into each space of the chamber through each gas-introduction means to carry out either the adsorption or reaction step for allowing the raw gas to react with the reactant gas. The apparatus permits the independent establishment of process conditions for the adsorption and reaction processes and the better acceleration of the reaction between raw and reactant gases to give a film having excellent quality and the apparatus can be manufactured at a low cost.
摘要翻译：一种包括基底台的真空成膜装置; 与阶段相对的真空室形成容器; 用于在所述级之间移动所述衬底的装置; 以及连接到每个容器的气体导入装置，其中所述平台和容器中的一个朝着另一个上升或下降以使所述台的上表面和所述容器的开口彼此接触，使得真空室可以并且可以通过每个气体引入装置将原料气体和/或反应气体引入室的每个空间中，以进行用于使原料气体与反应气体反应的吸附或反应步骤。该装置允许独立地建立用于吸附和反应过程的工艺条件，并且更好地加速原料气体和反应气体之间的反应，得到具有优良品质的膜，并且可以以低成本制造装置。

17. 发明授权

US06897754B2 Magnetic core for inductor 失效
标题翻译：电感磁芯
公开(公告)号：US06897754B2
公开(公告)日：2005-05-24
申请号：US10163887
申请日：2002-06-05
申请人： Bong Soo Jeong , Michio Ishikawa , Jin Wook Koo
发明人： Bong Soo Jeong , Michio Ishikawa , Jin Wook Koo
IPC分类号： H01F3/14 , H01F17/04 , H01F27/02
CPC分类号： H01F3/14 , H01F17/043 , H01F17/045 , H01F27/027
摘要： Disclosed is a low-priced and small-sized magnetic core for an inductor suitable for a high frequency signal and a large-current signal. The magnetic core is modified from a conventional EP type magnetic core. A recess is integrally formed with a peripheral portion of the magnetic core when it is shaped. A bottom portion and the peripheral portion are extended toward an opening portion to an extent of about 70 percentages of a length measured from a center of the center portion to an internal surface of the peripheral portion. The peripheral portion opposite to the opening portion has a uniform thickness. The magnetic core is designed to facilitate its surface mounting onto a PCB.
摘要翻译：公开了一种用于适用于高频信号和大电流信号的电感器的低价格和小尺寸的磁芯。磁芯由传统的EP型磁芯修改。当成形时，与磁芯的周边部分一体地形成凹部。底部和周边部分朝向开口部分延伸到从中心部分的中心到周边部分的内表面测量的长度的约70％的程度。与开口部分相对的周边部分具有均匀的厚度。磁芯设计用于将其表面安装在PCB上。

18. 发明授权

US5057535A Derivatives of an aminoketone 失效
标题翻译：氨基酮的衍生物
公开(公告)号：US5057535A
公开(公告)日：1991-10-15
申请号：US101134
申请日：1987-09-25
申请人： Akira Shiozawa , Michio Ishikawa , Giichi Izumi , Katsuhiko Sakitama , Kazuhisa Narita , Shuji Kurashige , Takeji Sakasai , Kazuo Ohtsuki , Hideo Sugimura , Hirotaka Yamamoto
发明人： Akira Shiozawa , Michio Ishikawa , Giichi Izumi , Katsuhiko Sakitama , Kazuhisa Narita , Shuji Kurashige , Takeji Sakasai , Kazuo Ohtsuki , Hideo Sugimura , Hirotaka Yamamoto
IPC分类号： C07C225/06 , C07D295/108
CPC分类号： C07D295/108 , C07C225/06 , C07C2101/14 , C07C2102/10
摘要： A new class of aminoketone derivatives according to the formula: ##STR1## and certain propiophenone derivatives in particular, corresponding to the formula: ##STR2## having central muscle relaxant activity.
摘要翻译：一类新的具有下式的氨基酮衍生物：特别是某些苯丙酮衍生物，特别是对应于具有中枢肌肉松弛剂活性的式：。

19. 发明授权

US4420835A Hollow cathode laser 失效
标题翻译：空心阴极激光器
公开(公告)号：US4420835A
公开(公告)日：1983-12-13
申请号：US268063
申请日：1981-05-28
申请人： Shuzo Hattori , Noboru Kamide , Katsumi Tokudome , Michio Ishikawa , Yuji Hayashi
发明人： Shuzo Hattori , Noboru Kamide , Katsumi Tokudome , Michio Ishikawa , Yuji Hayashi
IPC分类号： H01S3/03 , H01S3/038 , H01S3/097
CPC分类号： H01S3/0385 , H01S3/031
摘要： A hollow cathode laser comprises a cathode body which constitutes a part of a discharge envelope. The cathode body has a cathode hole coaxial with the body. It further has three anode holes which are through holes extending parallel to the axis of the cathode body and communicating with the cathode hole through slits, respectively. Three cylindrical anodes extend respectively through the anode holes and are spaced by a given distance from the inner surfaces defining the respective anode holes. The anodes have portions which protrude through the respective slits and which are positioned flush with the inner surface defining the cathode hole in the circumferential direction thereof.
摘要翻译：空心阴极激光器包括构成放电外壳的一部分的阴极体。阴极体具有与主体同轴的阴极孔。它还具有三个阳极孔，它们是平行于阴极体轴线延伸的通孔，并分别通过狭缝与阴极孔连通。三个圆柱形阳极分别延伸穿过阳极孔并与限定相应阳极孔的内表面间隔给定距离。阳极具有突出穿过相应狭缝的部分，其与在其圆周方向上限定阴极孔的内表面齐平。

20. 发明授权

US4257014A Gas laser discharge tube using corrugated cathode 失效
标题翻译：气体激光放电管采用瓦楞阴极
公开(公告)号：US4257014A
公开(公告)日：1981-03-17
申请号：US966857
申请日：1978-12-06
申请人： Shuzo Hattori , Noboru Kamide , Katumi Tokudome , Michio Ishikawa , Yuzi Hayashi
发明人： Shuzo Hattori , Noboru Kamide , Katumi Tokudome , Michio Ishikawa , Yuzi Hayashi
IPC分类号： H01S3/032 , H01S3/038 , H01S3/097
CPC分类号： H01S3/038 , H01S3/032
摘要： A gas laser discharge tube comprises a discharge vessel containing a discharge gas, a rod-shaped anode, a corrugated cathode and a voltage source connected between the anode and cathode. The corrugated cathode comprises a metal hollow cylinder arranged coaxially with the optical axis of the laser and a plurality of metal discs arranged coaxially with the optical axis of the laser at regular intervals in the axial direction of the metal hollow cylinder. The discs have their peripheries secured to the inner periphery of the metal hollow cylinder. Each disc has a central hole and another hole through which the anode extends parallel to the optical axis of the laser.
摘要翻译：气体激光放电管包括放电容器，放电容器包含放电气体，棒状阳极，波纹状阴极和连接在阳极和阴极之间的电压源。波纹状阴极包括与激光的光轴同轴布置的金属中空圆柱体，以及与金属中空圆柱体的轴向上的规则间隔与激光的光轴同轴配置的多个金属圆盘。圆盘的外周固定在金属中空圆筒的内周。每个盘具有中心孔和另一个孔，阳极通过该孔平行于激光的光轴延伸。

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