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11. 发明授权

US06426308B1 Methods for forming films having high dielectric constants 失效
标题翻译：用于形成具有高介电常数的膜的方法
公开(公告)号：US06426308B1
公开(公告)日：2002-07-30
申请号：US09209196
申请日：1998-12-10
申请人： Young-wook Park , Moon-yong Lee , Kyung-hun Kim , In-sung Park
发明人： Young-wook Park , Moon-yong Lee , Kyung-hun Kim , In-sung Park
IPC分类号： H01L2131
CPC分类号： C23C16/56 , C23C16/405 , C23C16/46 , H01L21/31604 , H01L21/31691 , H01L28/40 , H01L28/55
摘要： A method form forming a dielectric film on a substrate includes the steps of placing the substrate in a process chamber wherein said substrate is isolated from an external environment, depositing the dielectric film on the substrate in the process chamber, and annealing the dielectric film in said process chamber. In particular, the dielectric film can be formed from Ta2O5. Systems for forming the dielectric film are also disclosed.
摘要翻译：在衬底上形成电介质膜的方法形式包括以下步骤：将衬底放置在处理室中，其中所述衬底与外部环境隔离，将电介质膜沉积在处理室中的衬底上，并将所述电介质膜退火处理室。特别地，电介质膜可以由Ta 2 O 5形成。还公开了用于形成电介质膜的系统。

12. 发明授权

US5910218A Systems for forming films having high dielectric constants 失效
标题翻译：用于形成具有高介电常数的膜的系统
公开(公告)号：US5910218A
公开(公告)日：1999-06-08
申请号：US707904
申请日：1996-09-12
申请人： Young-wook Park , Moon-yong Lee , Kyung-hun Kim , In-sung Park
发明人： Young-wook Park , Moon-yong Lee , Kyung-hun Kim , In-sung Park
IPC分类号： C23C16/48 , C23C16/40 , C23C16/46 , C23C16/56 , H01L21/02 , H01L21/285 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , C23C16/00
CPC分类号： C23C16/56 , C23C16/405 , C23C16/46 , H01L21/31604 , H01L21/31691 , H01L28/40 , H01L28/55
摘要： A method form forming a dielectric film on a substrate includes the steps of placing the substrate in a process chamber wherein said substrate is isolated from an external environment, depositing the dielectric film on the substrate in the process chamber, and annealing the dielectric film in said process chamber. In particular, the dielectric film can be formed from Ta.sub.2 O.sub.5. Systems for forming the dielectric film are also disclosed.
摘要翻译：在衬底上形成电介质膜的方法形式包括以下步骤：将衬底放置在处理室中，其中所述衬底与外部环境隔离，将电介质膜沉积在处理室中的衬底上，并将所述电介质膜退火处理室。特别地，电介质膜可以由Ta 2 O 5形成。还公开了用于形成电介质膜的系统。

13. 发明申请

US20070259212A1 METHODS OF FORMING METAL THIN FILMS, LANTHANUM OXIDE FILMS, AND HIGH DIELECTRIC FILMS FOR SEMICONDUCTOR DEVICES USING ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：形成金属薄膜，氧化铝膜和用于使用原子层沉积的半导体器件的高介电膜的方法
公开(公告)号：US20070259212A1
公开(公告)日：2007-11-08
申请号：US11778278
申请日：2007-07-16
申请人： Ki-yeon Park , Sung-tae Kim , Young-sun Kim , In-sung Park , Jae-hyun Yeo , Yun-jung Lee , Ki-vin Im
发明人： Ki-yeon Park , Sung-tae Kim , Young-sun Kim , In-sung Park , Jae-hyun Yeo , Yun-jung Lee , Ki-vin Im
IPC分类号： B32B9/00 , B32B19/00
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45529 , C23C16/45553 , H01L21/02178 , H01L21/02192 , H01L21/022 , H01L21/02337 , H01L21/3141 , H01L21/31604 , H01L27/1085
摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.
摘要翻译：本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

14. 发明授权

US06734480B2 Semiconductor capacitors having tantalum oxide layers 有权
标题翻译：具有氧化钽层的半导体电容器
公开(公告)号：US06734480B2
公开(公告)日：2004-05-11
申请号：US10047706
申请日：2002-01-15
申请人： Jeong-hee Chung , In-sung Park , Jae-hyun Yeo
发明人： Jeong-hee Chung , In-sung Park , Jae-hyun Yeo
IPC分类号： H01L27108
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02183 , H01L21/02271 , H01L21/0228 , H01L21/31604 , H01L21/31683 , H01L21/31691 , H01L28/40
摘要： A semiconductor capacitor comprising: a first electrode; a second electrode; and a tantalum oxide layer positioned between said first electrode and said second electrodes. The tantalum oxide layer formed by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and wherein R1 and R2 are independently alkyl.
摘要翻译：半导体电容器包括位于第一电极和第二电极之间的第一电极，第二电极和氧化钽层。通过沉积至少一种前体和臭氧气体形成氧化钽层，所述至少一种前体由下式表示：其中X选自氮，硫，氧和羰基; 并且其中R 1和R 2独立地为烷基。

15. 发明授权

US06202590B1 Plasma apparatus for fabricating semiconductor devices 有权
标题翻译：用于制造半导体器件的等离子体装置
公开(公告)号：US06202590B1
公开(公告)日：2001-03-20
申请号：US09404805
申请日：1999-09-24
申请人： Kiw-sang Kim , Young-min Min , In-sung Park
发明人： Kiw-sang Kim , Young-min Min , In-sung Park
IPC分类号： C23C1600
CPC分类号： H01J37/32458 , H01J37/32082 , H01J37/32174
摘要： A plasma apparatus for fabricating a semiconductor device, is provided. This plasma apparatus includes a grounded chamber for providing a space where a predetermined process is to be performed, a chuck mounted within the chamber and insulated from the chamber, a gas injection ring installed around the sidewall of the chuck, an induction plasma power source connected to the chuck, a system controller for controlling the induction plasma power source, and a capacitance compensator for keeping the total chuck capacitance between the chuck and a ground terminal at a constant value. The gas injection ring is separated from the chuck by a predetermined distance and is electrically connected to the chamber.
摘要翻译：提供一种用于制造半导体器件的等离子体设备。该等离子体装置包括：接地室，用于提供要进行预定处理的空间;安装在室内并与室绝缘的卡盘;安装在卡盘侧壁周围的气体注入环;连接到感应等离子体电源卡盘，用于控制感应等离子体电源的系统控制器和用于将卡盘和接地端子之间的总卡盘电容保持在恒定值的电容补偿器。气体注入环与卡盘分开预定的距离，并且电连接到腔室。

16. 发明授权

US6118146A Microelectronic capacitors having tantalum pentoxide dielectrics 失效
标题翻译：具有五氧化钽电介质的微电子电容器
公开(公告)号：US6118146A
公开(公告)日：2000-09-12
申请号：US152764
申请日：1998-09-14
申请人： In-sung Park , Eui-song Kim
发明人： In-sung Park , Eui-song Kim
IPC分类号： H01L27/04 , H01L21/02 , H01L21/203 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L31/119
CPC分类号： H01L28/40 , H01L28/82 , H01L21/31604
摘要： A microelectronic capacitor is formed by forming a first tantalum pentoxide film on a conductive electrode and annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone. The forming step and annealing step are then repeated at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film. A second conductive electrode may then be formed on the tantalum pentoxide layer. The resultant tantalum pentoxide layer can have a thickness which exceeds 45 .ANG., yet has a reduced leakage current by filling the oxygen vacancies across the thickness thereof.
摘要翻译：通过在导电电极上形成第一五氧化二钽膜并在紫外线和臭氧的存在下退火第一五氧化二钽膜来形成微电子电容器。然后，将形成步骤和退火步骤重复至少一次以形成至少一种在紫外线辐射下退火的第五个五氧化二钽膜。然后可以在五氧化二钽层上形成第二导电电极。所得五氧化二钽层的厚度可以超过45埃，但是通过在其厚度上填充氧空位具有减小的漏电流。

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