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11. 发明授权

US08891213B2 Integrated electrostatic discharge (ESD) device 有权
标题翻译：集成静电放电（ESD）器件
公开(公告)号：US08891213B2
公开(公告)日：2014-11-18
申请号：US13244292
申请日：2011-09-24
申请人： Chi Kang Liu , Ta Lee Yu , Quan Li
发明人： Chi Kang Liu , Ta Lee Yu , Quan Li
IPC分类号： H02H9/00 , H01L27/02 , H01L29/78 , H02H3/22 , H02H3/02 , H02H3/08
CPC分类号： H01L27/0259 , H01L29/7835
摘要： A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well region is characterized by a first depth. The device includes an MOS transistor, a first bipolar transistor, and a second bipolar transistor. The MOS transistor includes a first lightly doped drain (LDD) region of a second depth within the well region, and a drain region and an emitter region within in the first LDD region. The emitter region is characterized by a second conductivity type. The first bipolar transistor is associated with the emitter region, the first LDD region, and the well region, and is characterized by a first trigger voltage. The second bipolar transistor is associated with the first LDD region, the well region, and the substrate, and is characterized by a second trigger voltage.
摘要翻译：用于ESD保护的半导体器件包括形成在衬底内的第一导电类型的半导体衬底和第二导电类型的阱区。井区的特征在于第一深度。该器件包括MOS晶体管，第一双极晶体管和第二双极晶体管。 MOS晶体管包括在阱区内的第二深度的第一轻掺杂漏极（LDD）区域，以及在第一LDD区域内的漏极区域和发射极区域。发射极区域的特征在于第二导电类型。第一双极晶体管与发射极区域，第一LDD区域和阱区域相关联，并且其特征在于第一触发电压。第二双极晶体管与第一LDD区，阱区和衬底相关联，并且其特征在于第二触发电压。

12. 发明授权

US08258598B2 E-fuse and associated control circuit 有权
标题翻译：电熔丝和相关控制电路
公开(公告)号：US08258598B2
公开(公告)日：2012-09-04
申请号：US12702984
申请日：2010-02-09
申请人： Chi Kang Liu , Chin-Wei Lin , Min-Nan Hsieh
发明人： Chi Kang Liu , Chin-Wei Lin , Min-Nan Hsieh
IPC分类号： H01L29/00
CPC分类号： H01L27/0629 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An e-fuse and an e-fuse control circuit are provided. The e-fuse includes a polysilicon layer and a metal silicide layer stacked on the polysilicon layer. The e-fuse operates in an open state when the silicide layer is broken by burning while one portion of the polysilicon layer is exposed.
摘要翻译：提供电子熔丝和电熔丝控制电路。电熔丝包括堆叠在多晶硅层上的多晶硅层和金属硅化物层。当硅化物层通过燃烧而破坏时，e熔丝工作在打开状态，同时暴露多晶硅层的一部分。

13. 发明申请

US20120014021A1 INTEGRATED ELECTROSTATIC DISCHARGE (ESD) DEVICE 有权
标题翻译：集成静电放电（ESD）器件
公开(公告)号：US20120014021A1
公开(公告)日：2012-01-19
申请号：US13244292
申请日：2011-09-24
申请人： Chi Kang Liu , TA Lee Yu , Quan Li
发明人： Chi Kang Liu , TA Lee Yu , Quan Li
IPC分类号： H02H9/04 , H01L21/332
CPC分类号： H01L27/0259 , H01L29/7835
摘要： A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well region is characterized by a first depth. The device includes an MOS transistor, a first bipolar transistor, and a second bipolar transistor. The MOS transistor includes a first lightly doped drain (LDD) region of a second depth within the well region, and a drain region and an emitter region within in the first LDD region. The emitter region is characterized by a second conductivity type. The first bipolar transistor is associated with the emitter region, the first LDD region, and the well region, and is characterized by a first trigger voltage. The second bipolar transistor is associated with the first LDD region, the well region, and the substrate, and is characterized by a second trigger voltage.
摘要翻译：用于ESD保护的半导体器件包括形成在衬底内的第一导电类型的半导体衬底和第二导电类型的阱区。井区的特征在于第一深度。该器件包括MOS晶体管，第一双极晶体管和第二双极晶体管。 MOS晶体管包括在阱区内的第二深度的第一轻掺杂漏极（LDD）区域，以及在第一LDD区域内的漏极区域和发射极区域。发射极区域的特征在于第二导电类型。第一双极晶体管与发射极区域，第一LDD区域和阱区域相关联，并且其特征在于第一触发电压。第二双极晶体管与第一LDD区，阱区和衬底相关联，并且其特征在于第二触发电压。

14. 发明申请

US20110012854A1 Touch Sensing Method and Associated Apparatus 有权
标题翻译：触感传感法及相关仪器
公开(公告)号：US20110012854A1
公开(公告)日：2011-01-20
申请号：US12838567
申请日：2010-07-19
申请人： Chi Kang Liu , Chin-Wei Lin
发明人： Chi Kang Liu , Chin-Wei Lin
IPC分类号： G06F3/041
CPC分类号： G06F3/0416
摘要： A touch screen includes an LCD panel; a display controller for processing a video signal to generate a panel control signal and a sensing control signal, with the panel control signal controlling the LCD panel so that the LCD panel displays images according to the panel control signal; a touch panel, for generating the sensing signal in response to a touch; and a sensing circuit, coupled to the touch panel and the display controller, for receiving the sensing signal and the sensing control signal to generate a position signal with reference to the sensing control signal.
摘要翻译：触摸屏包括LCD面板; 用于处理视频信号以产生面板控制信号和感测控制信号的显示控制器，面板控制信号控制LCD面板，使得LCD面板根据面板控制信号显示图像; 触摸面板，用于响应于触摸而产生感测信号; 以及耦合到触摸面板和显示控制器的感测电路，用于接收感测信号和感测控制信号，以参考感测控制信号产生位置信号。

15. 发明申请

US20100188366A1 Touch Sensing Device and Method 有权
标题翻译：触摸感应装置和方法
公开(公告)号：US20100188366A1
公开(公告)日：2010-07-29
申请号：US12692309
申请日：2010-01-22
申请人： Chi Kang Liu , Guo-Kiang Hung
发明人： Chi Kang Liu , Guo-Kiang Hung
IPC分类号： G06F3/041
CPC分类号： G06F3/0416 , G06F3/044
摘要： A touch sensing device capable of accurately detecting a touched position on a touch panel includes a touch panel, a conversion unit and a calculation unit. The touch panel having a plurality of horizontal sensing lines and vertical sensing lines generates a plurality of horizontal sensing signals and vertical sensing signals in response to a touch on the touch panel. The conversion unit generates a plurality of two-dimensional (2D) sensing signals according to the horizontal and vertical sensing signals. The calculation unit determines a touched position on the touch panel according to the 2D sensing signals.
摘要翻译：能够精确地检测触摸面板上的触摸位置的触摸感测装置包括触摸面板，转换单元和计算单元。具有多个水平感测线和垂直感测线的触摸面板响应于触摸面板上的触摸而产生多个水平感测信号和垂直感测信号。转换单元根据水平和垂直感测信号产生多个二维（2D）感测信号。计算单元根据2D感测信号确定触摸面板上的触摸位置。

16. 发明授权

US08421765B2 Touch sensing device and method 有权
标题翻译：触摸感应装置及方法
公开(公告)号：US08421765B2
公开(公告)日：2013-04-16
申请号：US12692309
申请日：2010-01-22
申请人： Chi Kang Liu , Guo-Kiang Hung
发明人： Chi Kang Liu , Guo-Kiang Hung
IPC分类号： G06F3/041
CPC分类号： G06F3/0416 , G06F3/044
摘要： A touch sensing device capable of accurately detecting a touched position on a touch panel includes a touch panel, a conversion unit and a calculation unit. The touch panel having a plurality of horizontal sensing lines and vertical sensing lines generates a plurality of horizontal sensing signals and vertical sensing signals in response to a touch on the touch panel. The conversion unit generates a plurality of two-dimensional (2D) sensing signals according to the horizontal and vertical sensing signals. The calculation unit determines a touched position on the touch panel according to the 2D sensing signals.
摘要翻译：能够精确地检测触摸面板上的触摸位置的触摸感测装置包括触摸面板，转换单元和计算单元。具有多个水平感测线和垂直感测线的触摸面板响应于触摸面板上的触摸而产生多个水平感测信号和垂直感测信号。转换单元根据水平和垂直感测信号产生多个二维（2D）感测信号。计算单元根据2D感测信号确定触摸面板上的触摸位置。

17. 发明授权

US08053843B2 Integrated electrostatic discharge (ESD) device 有权
标题翻译：集成静电放电（ESD）器件
公开(公告)号：US08053843B2
公开(公告)日：2011-11-08
申请号：US12483195
申请日：2009-06-11
申请人： Chi Kang Liu , Ta Lee Yu , Quan Li
发明人： Chi Kang Liu , Ta Lee Yu , Quan Li
IPC分类号： H01L27/06
CPC分类号： H01L27/0259 , H01L29/7835
摘要： A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well region is characterized by a first depth. The device includes an MOS transistor, a first bipolar transistor, and a second bipolar transistor. The MOS transistor includes a first lightly doped drain (LDD) region of a second depth within the well region, and a drain region and an emitter region within in the first LDD region. The emitter region is characterized by a second conductivity type. The first bipolar transistor is associated with the emitter region, the first LDD region, and the well region, and is characterized by a first trigger voltage. The second bipolar transistor is associated with the first LDD region, the well region, and the substrate, and is characterized by a second trigger voltage.
摘要翻译：用于ESD保护的半导体器件包括形成在衬底内的第一导电类型的半导体衬底和第二导电类型的阱区。井区的特征在于第一深度。该器件包括MOS晶体管，第一双极晶体管和第二双极晶体管。 MOS晶体管包括在阱区内的第二深度的第一轻掺杂漏极（LDD）区域，以及在第一LDD区域内的漏极区域和发射极区域。发射极区域的特征在于第二导电类型。第一双极晶体管与发射极区域，第一LDD区域和阱区域相关联，并且其特征在于第一触发电压。第二双极晶体管与第一LDD区，阱区和衬底相关联，并且其特征在于第二触发电压。

18. 发明授权

US08817435B2 Integrated electrostatic discharge (ESD) device 有权
标题翻译：集成静电放电（ESD）器件
公开(公告)号：US08817435B2
公开(公告)日：2014-08-26
申请号：US13291093
申请日：2011-11-07
申请人： Chi Kang Liu , Ta Lee Yu , Quan Li
发明人： Chi Kang Liu , Ta Lee Yu , Quan Li
IPC分类号： H02H9/00 , H02H3/20 , H02H9/04 , H01L27/088 , H01L29/76
CPC分类号： H01L27/0259 , H01L29/7835
摘要： A method for making a semiconductor device includes providing a substrate of a first conductivity type and having a surface region, forming a well region of a second conductivity type and having a first depth in the substrate, adding a gate dielectric layer overlying the surface region, adding a gate layer overlying the gate dielectric layer, forming a first LDD region of the first conductivity type and having a second depth within the well region, forming an emitter region of the second conductivity type within the first LDD region, and forming a second LDD region of the first conductivity type with the well region, a channel region separates the first and second LDD regions. The method further includes forming a source region being of the first conductivity type within the second LDD region and adding an output pad coupled to both the drain and emitter regions.
摘要翻译：一种制造半导体器件的方法包括提供第一导电类型的衬底，并具有表面区域，形成第二导电类型的阱区域并且在衬底中具有第一深度，添加覆盖在表面区域上的栅极电介质层，添加覆盖所述栅介质层的栅极层，形成所述第一导电类型的第一LDD区，并且在所述阱区内具有第二深度，在所述第一LDD区内形成所述第二导电类型的发射极区，以及形成第二LDD 具有阱区的第一导电类型的区域，沟道区域分离第一和第二LDD区域。该方法还包括在第二LDD区域内形成具有第一导电类型的源极区域，并且将耦合到漏极和发射极区域的输出焊盘相加。

19. 发明申请

US20100277458A1 Driving Circuit on LCD Panel and Associated Control Method 有权
标题翻译： LCD面板驱动电路及相关控制方法
公开(公告)号：US20100277458A1
公开(公告)日：2010-11-04
申请号：US12769901
申请日：2010-04-29
申请人： Chi Kang Liu , Chin-Wei Lin , Min-Nan Hsieh
发明人： Chi Kang Liu , Chin-Wei Lin , Min-Nan Hsieh
IPC分类号： G06F3/038
CPC分类号： G09G3/3688 , G09G2330/06
摘要： A driving circuit on a liquid crystal display (LCD) panel and associated control method is provided. The LCD panel connected to a display control circuit via a flexible print circuit (FPC) includes a master source driver, for outputting a digital image signal in compliance with a first electrical specification via an FPC board and converting the digital image signal to a gate driving signal and a slave source driving signal, which are in compliance with a second electrical specification; a gate driver, for receiving the gate driving signal in compliance with the second electrical specification; and a slave source driver, for receiving the slave source driving signal in compliance with the second electrical specification. The master source driver, the slave source driver and the gate driver drive a thin-film transistor (TFT) on the LCD panel.
摘要翻译：提供了液晶显示器（LCD）面板上的驱动电路和相关的控制方法。通过柔性印刷电路（FPC）连接到显示控制电路的LCD面板包括主源驱动器，用于经由FPC板输出符合第一电气规范的数字图像信号，并将数字图像信号转换为门驱动信号和从源驱动信号，其符合第二电气规范; 门驱动器，用于接收符合第二电气规范的门驱动信号; 和从源驱动器，用于接收符合第二电气规范的从源驱动信号。主源驱动器，从源驱动器和栅极驱动器驱动LCD面板上的薄膜晶体管（TFT）。

20. 发明授权

US07265422B2 Low voltage trigger and save area electrostatic discharge device 有权
标题翻译：低电压触发和保存区域静电放电装置
公开(公告)号：US07265422B2
公开(公告)日：2007-09-04
申请号：US11215492
申请日：2005-08-29
申请人： Talee Yu , Chi Kang Liu
发明人： Talee Yu , Chi Kang Liu
IPC分类号： H01L23/62
CPC分类号： H01L27/0259
摘要： Techniques for ESD protection are provided. An ESD protection device includes a first well region and a second well region disposed in a semiconductor substrate, with an isolation region therebetween. N+ implant regions are disposed in the second well region and are coupled in common at a first node. NLDD regions are disposed between the N+ implant regions, and pocket implants underlie each of the NLDD regions. Current discharge paths are defined by corresponding NLDD regions and pocket implants when a voltage of the first node exceeds a breakdown voltage. In a specific embodiment, the breakdown voltage is less than a breakdown voltage for a logic gate oxide.
摘要翻译：提供ESD保护技术。 ESD保护装置包括设置在半导体衬底中的第一阱区和第二阱区，其间具有隔离区。 N +注入区域设置在第二阱区域中并且在第一节点处共同耦合。 NLDD区域设置在N +植入区域之间，并且口袋植入物构成每个NLDD区域的基础。当第一节点的电压超过击穿电压时，当前的放电路径由相应的NLDD区域和口袋植入物限定。在具体实施例中，击穿电压小于逻辑栅极氧化物的击穿电压。

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