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11. 发明授权

US6037610A Transistor and semiconductor device having columnar crystals 失效
公开(公告)号：US6037610A
公开(公告)日：2000-03-14
申请号：US41516
申请日：1998-03-13
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L21/20 , H01L29/786 , H01L29/04
CPC分类号： H01L21/2022 , H01L29/78675
摘要： A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.

12. 发明授权

US5818076A Transistor and semiconductor device 失效
标题翻译：晶体管和半导体器件
公开(公告)号：US5818076A
公开(公告)日：1998-10-06
申请号：US593552
申请日：1996-01-30
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L21/20 , H01L29/786 , H01L29/04 , H01L31/036
CPC分类号： H01L21/2022 , H01L29/78675
摘要： A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic �110! axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.
摘要翻译：具有高载流子迁移率的半导体器件，其包括在其上设置有基膜的基板，并且还通过晶体生长形成晶体非单晶硅膜，其中晶体沿晶体[110]轴生长，源极/漏极区域大致沿着与晶体生长方向一致的载体移动方向设置。此外，沿晶体生长方向的导电率高于其它方向的导电率。

13. 发明授权

US06608325B1 Transistor and semiconductor device having columnar crystals 失效
标题翻译：具有柱状晶体的晶体管和半导体器件
公开(公告)号：US06608325B1
公开(公告)日：2003-08-19
申请号：US09477705
申请日：2000-01-05
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L2904
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L29/78675
摘要： A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.
摘要翻译：具有高载流子迁移率的半导体器件，其包括在其上设置有基膜的基板，并且还通过晶体生长形成晶体非单晶硅膜，其中晶体沿晶体[110]轴生长，源极/漏极区域大致沿着与晶体生长方向一致的载体移动方向设置。此外，沿晶体生长方向的导电率高于其它方向的导电率。

14. 发明授权

US06413805B1 Semiconductor device forming method 失效
标题翻译：半导体器件形成方法
公开(公告)号：US06413805B1
公开(公告)日：2002-07-02
申请号：US08670122
申请日：1996-06-25
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L2184
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTS) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅活性层的薄膜晶体管（TFTS）中，通过离子注入或其它方法将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

15. 发明授权

US06875628B1 Semiconductor device and fabrication method of the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06875628B1
公开(公告)日：2005-04-05
申请号：US08811742
申请日：1997-03-06
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga
IPC分类号： H01L21/20 , H01L21/77 , H01L21/84 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L27/1214 , H01L27/1277
摘要： Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.
摘要翻译：在非晶硅膜上将镍引入除了像素部分之外的外围电路部分的预定区域以从该区域结晶。在形成栅电极等之后，通过掺杂杂质形成源极，漏极和沟道，照射激光以改善结晶。之后，形成电极/电线。由此，外围电路部的薄膜晶体管（TFT）由结晶硅晶体构成的有源矩阵型液晶显示器，晶体硅膜的晶体沿平行于载流子的方向生长，并且其像素部分中的TFT构成的非晶硅膜。

16. 发明授权

US5604360A Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor 失效
标题翻译：半导体器件包括多个薄膜晶体管，其至少一些薄膜晶体管具有晶体生长基本上平行于用于晶体管的衬底的表面的晶体硅膜
公开(公告)号：US5604360A
公开(公告)日：1997-02-18
申请号：US248220
申请日：1994-05-24
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L31/036 , H01L31/112 , H01L27/01
CPC分类号： H01L27/1214 , H01L21/2022 , H01L29/66757 , G09G2300/0408
摘要： Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.
摘要翻译：在非晶硅膜上将镍引入除了像素部分之外的外围电路部分的预定区域以从该区域结晶。在形成栅电极等之后，通过掺杂杂质形成源极，漏极和沟道，照射激光以改善结晶。之后，形成电极/电线。由此，外围电路部的薄膜晶体管（TFT）由结晶硅晶体构成的有源矩阵型液晶显示器，晶体硅膜的晶体沿平行于载流子的方向生长，并且其像素部分中的TFT构成的非晶硅膜。

17. 发明授权

US06348367B1 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06348367B1
公开(公告)日：2002-02-19
申请号：US08861001
申请日：1997-05-21
申请人： Hisashi Ohtani , Hiroki Adachi , Akiharu Miyanaga , Toru Takayama
发明人： Hisashi Ohtani , Hiroki Adachi , Akiharu Miyanaga , Toru Takayama
IPC分类号： H01L2128
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L27/1214 , H01L27/1277 , H01L27/1292 , H01L29/66757
摘要： In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550° C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is precisely controlled. A resist mask 21 is formed on the surface of an amorphous silicon film 12 provided on a glass substrate 11, and an aqueous solution 14, e.g., an acetate solution, containing a catalyst element such as nickel at a concentration controlled in a range of from 10 to 200 ppm (need to be adjusted) is supplied dropwise thereto. After maintaining the state for a predetermined duration of time, the entire substrate is subjected to spin drying using a spinner 15. A thin film of crystalline silicon is finally obtained by applying heat treatment at 550° C. for a duration of 4 hours.
摘要翻译：在通过使用催化剂元素在约550℃下进行约4小时的热处理使非晶硅膜结晶的方法中，用于加速结晶的催化剂元素的量将被引入非晶态硅精确控制。在设置在玻璃基板11上的非晶硅膜12的表面上形成抗蚀剂掩模21和含有催化剂元素如镍的水溶液14，例如乙酸盐溶液，其浓度控制在向其中滴加10〜200ppm（需要调节）。在将状态保持预定的持续时间之后，使用旋转器15对整个基板进行旋转干燥。最后通过在550℃下进行热处理4小时来获得晶体硅薄膜。

18. 发明授权

US06798023B1 Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film 失效
标题翻译：半导体器件包括第一绝缘膜，在第一绝缘膜上包含有机树脂的第二绝缘膜和在第二绝缘膜上的像素电极
公开(公告)号：US06798023B1
公开(公告)日：2004-09-28
申请号：US09593765
申请日：2000-06-14
申请人： Hisashi Ohtani , Hiroki Adachi , Akiharu Miyanaga , Toru Takayama
发明人： Hisashi Ohtani , Hiroki Adachi , Akiharu Miyanaga , Toru Takayama
IPC分类号： H01L2976
CPC分类号： H01L27/1277 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L27/1214 , H01L29/66757
摘要： A semiconductor device comprising a semiconductor layer having at least first and second impurity regions and a channel formation region formed on an insulating surface; a gate insulating film adjacent to the semiconductor layer; a gate electrode adjacent to the gate insulating film; a first insulating film formed over the insulating surface, the semiconductor layer, the gate insulating film and the gate electrode; a second insulating film comprising an organic resin formed on first insulating film; an electrode formed over the second insulating film and connected to the one of the first and second impurity regions; and a pixel electrode formed over the second insulating film.
摘要翻译：一种半导体器件，包括至少具有第一和第二杂质区域的半导体层和形成在绝缘表面上的沟道形成区域; 与半导体层相邻的栅极绝缘膜; 与栅极绝缘膜相邻的栅电极; 形成在绝缘表面上的第一绝缘膜，半导体层，栅极绝缘膜和栅电极; 第二绝缘膜，包括形成在第一绝缘膜上的有机树脂; 形成在所述第二绝缘膜上并连接到所述第一和第二杂质区之一的电极; 以及形成在所述第二绝缘膜上的像素电极。

19. 发明授权

US07141461B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07141461B2
公开(公告)日：2006-11-28
申请号：US10878687
申请日：2004-06-29
申请人： Hisashi Ohtani , Hiroki Adachi , Akiharu Miyanaga , Toru Takayama
发明人： Hisashi Ohtani , Hiroki Adachi , Akiharu Miyanaga , Toru Takayama
IPC分类号： H01L21/84
CPC分类号： H01L27/1277 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L27/1214 , H01L29/66757
摘要： In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550° C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is precisely controlled. A resist mask 21 is formed on the surface of an amorphous silicon film 12 provided on a glass substrate 11, and an aqueous solution 14, e.g., an acetate solution, containing a catalyst element such as nickel at a concentration controlled in a range of from 10 to 200 ppm (need to be adjusted) is supplied dropwise thereto. After maintaining the state for a predetermined duration of time, the entire substrate is subjected to spin drying using a spinner 15. A thin film of crystalline silicon is finally obtained by applying heat treatment at 550° C. for a duration of 4 hours.
摘要翻译：在通过使用催化剂元素在约550℃下进行约4小时的热处理使非晶硅膜结晶的方法中，用于加速结晶的催化剂元素的量将被引入非晶态硅精确控制。在设置在玻璃基板11上的非晶硅膜12的表面上形成抗蚀剂掩模21和含有催化剂元素如镍的水溶液14，例如乙酸盐溶液，其浓度控制在向其中滴加10〜200ppm（需要调节）。在将状态保持预定的时间之后，使用旋转器15对整个基板进行旋转干燥。最终通过在550℃下进行热处理4小时来获得晶体硅薄膜。

20. 发明授权

US5654203A Method for manufacturing a thin film transistor using catalyst elements to promote crystallization 失效
标题翻译：使用催化剂元素制造薄膜晶体管促进结晶的方法
公开(公告)号：US5654203A
公开(公告)日：1997-08-05
申请号：US479212
申请日：1995-06-07
申请人： Hisashi Ohtani , Hiroki Adachi , Akiharu Miyanaga , Toru Takayama
发明人： Hisashi Ohtani , Hiroki Adachi , Akiharu Miyanaga , Toru Takayama
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84
CPC分类号： H01L21/2022 , H01L27/1214 , H01L29/66757
摘要： In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550.degree. C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is precisely controlled. A resist mask 21 is formed on the surface of an amorphous silicon film 12 provided on a glass substrate 11, and an aqueous solution 14, e.g., an acetate solution, containing a catalyst element such as nickel at a concentration controlled in a range of from 10 to 200 ppm (need to be adjusted) is supplied dropwise thereto. After maintaining the state for a predetermined duration of time, the entire substrate is subjected to spin drying using a spinner 15. A thin film of crystalline silicon is finally obtained by applying heat treatment at 550.degree. C. for a duration of 4 hours.
摘要翻译：在通过使用催化剂元素在约550℃下进行约4小时的热处理使非晶硅膜结晶的方法中，加入结晶的催化剂元素的量将被引入非晶态硅精确控制。在设置在玻璃基板11上的非晶硅膜12的表面上形成抗蚀剂掩模21和含有催化剂元素如镍的水溶液14，例如乙酸盐溶液，其浓度控制在向其中滴加10〜200ppm（需要调节）。在将状态保持预定的持续时间之后，使用旋转器15对整个基板进行旋转干燥。最后通过在550℃下进行热处理持续4小时来获得晶体硅薄膜。

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