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    • 13. 发明申请
    • SODIUM SECONDARY BATTERY
    • 钠二次电池
    • US20110003191A1
    • 2011-01-06
    • US12865987
    • 2009-02-03
    • Satoru KuzeMasami MakideraTaketsugu Yamamoto
    • Satoru KuzeMasami MakideraTaketsugu Yamamoto
    • H01M4/50H01M4/52H01M2/14
    • H01M2/1686C01G45/1228C01G51/50C01P2006/40H01M2/1653H01M4/505H01M4/525H01M4/587H01M10/054
    • The present invention provides a sodium secondary battery having a superior cycling performance as compared with conventional techniques. A sodium secondary battery of the present invention comprises a positive electrode comprising a mixed metal oxide which comprises Na and M1 wherein M1 represents two or more elements selected from the group consisting of Mn, Fe, Co and Ni, with an Na:M1 molar ratio being a:1 wherein a is a value falling within the range of more than 0.5 and less than 1, a negative electrode comprising a carbonaceous material capable of storing and releasing Na ions, and an electrolyte. Further, the sodium secondary battery of the present invention may comprise a separator, and the separator may be a separator comprising a porous laminated film in which a heat-resistant porous layer comprising a heat-resistant resin and a porous film comprising a thermoplastic resin are stacked each other.
    • 本发明提供了与常规技术相比具有优异的循环性能的钠二次电池。 本发明的钠二次电池包括含有包含Na和M1的混合金属氧化物的正极,其中M1表示选自Mn,Fe,Co和Ni中的两种或更多种元素,Na:M1摩尔比 其中a是大于0.5且小于1的范围的值,包含能够储存和释放Na离子的碳质材料的负极和电解质。 此外,本发明的钠二次电池可以包括隔膜,隔板可以是包括多孔层压膜的隔板,其中包含耐热树脂的耐热多孔层和包含热塑性树脂的多孔膜是 彼此堆叠
    • 19. 发明申请
    • SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
    • 半导体波导和半导体波形制造方法
    • US20110006399A1
    • 2011-01-13
    • US12810989
    • 2008-12-26
    • Tomoyuki TakadaSadanori YamanakaMasahiko HataTaketsugu YamamotoKazumi Wada
    • Tomoyuki TakadaSadanori YamanakaMasahiko HataTaketsugu YamamotoKazumi Wada
    • H01L29/12H01L21/20
    • H01L21/02516H01L21/02381H01L21/02433H01L21/0245H01L21/02546H01L21/0262H01L21/02639H01L29/267H01L29/7371
    • A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer.
    • 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括单晶Si晶片的半导体晶片; 绝缘层,其具有开放区域并形成在所述晶片上; 在开放区域中在晶片上外延生长的Ge层; 以及在所述Ge层上外延生长的GaAs层,其中,所述Ge层通过以下方式形成:(i)将所述晶片放置在可产生超高真空低压状态的CVD反应室中,(ii) 在原料气体可以热分解的第一温度下外延生长,(iii)在高于第一温度的第二温度下进行第二外延生长,(iv)在损失的第三温度下进行第一退火 比在第一和第二外延生长形成的外延层上的熔点高的Ge,和(v)在低于第三温度的第四温度下进行第二次退火。 可以通过重复第一退火和第二退火多次形成Ge层,并且绝缘层可以是氧化硅层。
    • 20. 发明申请
    • MIXED METAL OXIDE AND SODIUM SECONDARY BATTERY
    • 混合金属氧化物和钠二次电池
    • US20100323232A1
    • 2010-12-23
    • US12865976
    • 2009-02-03
    • Satoru KuzeMasami MakideraTaketsugu Yamamoto
    • Satoru KuzeMasami MakideraTaketsugu Yamamoto
    • H01M2/14H01M4/40H01M4/505H01M4/485H01M10/054
    • H01M4/525H01M2/1653H01M2/1686H01M4/505H01M10/054H01M10/54Y02W30/84
    • The present invention provides a sodium secondary battery capable of reducing the amount of lithium used, and ensuring a larger discharge capacity maintenance rate when having repeated a charge and discharge, as compared with conventional techniques; and a mixed metal oxide usable as the positive electrode active material therefor. A mixed metal oxide of the present invention comprises Na and M1 wherein M1 represents three or more elements selected from the group consisting of Mn, Fe, Co and Ni with an Na:M1 molar ratio being a:1 wherein a is a value falling within the range of more than 0.5 and less than 1. Also, a mixed metal oxide of the present invention is represented by the following formula (1): NaaM1O2  (1) wherein M1 and a each have the same meaning as above.The positive electrode active material for secondary batteries of the present invention comprises the mixed metal oxide above.
    • 本发明提供一种能够减少所使用的锂的量的钠二次电池,并且与现有的技术相比,能够在重复进行充放电时确保更大的放电容量维持率。 和可用作其的正极活性物质的混合金属氧化物。 本发明的混合金属氧化物包含Na和M1,其中M1表示选自Mn,Fe,Co和Ni中的三种或更多种元素,Na:M1摩尔比为a:1,其中a为落入 范围大于0.5且小于1.此外,本发明的混合金属氧化物由下式(1)表示:NaaM1O2(1)其中M1和a各自具有与上述相同的含义。 本发明的二次电池用正极活性物质包含上述复合金属氧化物。