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    • 13. 发明授权
    • Method of manufacturing thin-film electroluminescent display panel
    • 制造薄膜电致发光显示面板的方法
    • US4721631A
    • 1988-01-26
    • US23912
    • 1987-03-09
    • Yoshihiro EndoTakuo YamashitaIkuo Ogawa
    • Yoshihiro EndoTakuo YamashitaIkuo Ogawa
    • C23C16/30C23C16/34H05B33/10H05B33/12H05B33/22B05D5/06
    • H05B33/22C23C16/30C23C16/305C23C16/345H05B33/10H05B33/12
    • According to a method of this invention for manufacturing a thin-film electroluminescent display panel of the type having a pair of electrodes sandwiching a three-layer structure composed of a layer covered with dielectric layers on both sides, a silicon nitride or silicon oxynitride film is formed on a layer comprising ZnS by a plasma chemical vapor deposition method with a mixture of silicon and nitrogen gases or of silicon, nitrogen and N.sub.2 O gases. Alternatively, this film may be formed in a double-layer structure, the second layer being formed with a mixture of silicon and ammonia gases or of silicon, ammonia and N.sub.2 O gases. A dielectric layer thus formed by a method embodying this invention can satisfactorily cover the protrusions and impurities in the layer underneath and thin-film electroluminescent elements manufactured by this method have superior brightness characteristics.
    • 根据本发明的制造薄膜电致发光显示面板的方法,该薄膜电致发光显示面板具有夹着由两面覆盖有电介质层的层构成的三层结构的一对电极,氮化硅或氮氧化硅膜是 通过等离子体化学气相沉积方法在硅和氮气或硅,氮和N 2 O气体的混合物上形成在包含ZnS的层上。 或者,该膜可以形成为双层结构,第二层由硅和氨气体或硅,氨和N 2 O气体的混合物形成。 通过本发明的方法形成的电介质层可以令人满意地覆盖下面的层中的突起和杂质,并且通过该方法制造的薄膜电致发光元件具有优异的亮度特性。