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11. 发明授权

US08865590B2 Film forming method, pretreatment device, and processing system 有权
标题翻译：成膜方法，预处理装置和加工系统
公开(公告)号：US08865590B2
公开(公告)日：2014-10-21
申请号：US13378535
申请日：2010-06-16
申请人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
发明人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
IPC分类号： H01L21/00 , H01L21/768 , H01L21/3205 , H01L21/285 , H01L21/3105 , C23C16/40 , C23C16/02
CPC分类号： H01L21/76814 , C23C16/02 , C23C16/40 , H01L21/28556 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76844 , H01L21/76867
摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.
摘要翻译：公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜在亲水化绝缘层的表面上使用含锰材料气体的方法。因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

12. 发明授权

US08247321B2 Method of manufacturing semiconductor device, semiconductor device, electronic instrument, semiconductor manufacturing apparatus, and storage medium 有权
标题翻译：半导体装置，半导体装置，电子仪器，半导体制造装置和存储介质的制造方法
公开(公告)号：US08247321B2
公开(公告)日：2012-08-21
申请号：US12864824
申请日：2009-01-20
申请人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato , Junichi Koike , Koji Neishi
发明人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato , Junichi Koike , Koji Neishi
IPC分类号： H01L21/4763
CPC分类号： C23C16/40 , C23C28/00 , C23C28/322 , C23C28/345 , H01L21/28562 , H01L21/76814 , H01L21/76831 , H01L21/76844
摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.
摘要翻译：当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰而在铜布线的表面上不允许生成氧化锰。此后，铜嵌入凹槽中。

13. 发明授权

US08119510B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08119510B2
公开(公告)日：2012-02-21
申请号：US12706237
申请日：2010-02-16
申请人： Hiroshi Sato , Kenji Matsumoto , Hitoshi Itoh
发明人： Hiroshi Sato , Kenji Matsumoto , Hitoshi Itoh
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205
CPC分类号： H01L21/28194 , H01L21/823857 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film.
摘要翻译：提供一种半导体器件的制造方法，其包括可以形成为薄膜并且易于控制膜组成的栅极绝缘膜。制造方法包括：在形成有晶体管的半导体衬底上形成用作栅极绝缘膜的氧化锰膜; 在氧化锰膜上形成用作栅电极的导电膜; 以及通过处理导电膜和氧化锰膜形成栅电极和栅极绝缘膜。

14. 发明申请

US20110049718A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC INSTRUMENT, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM 有权
标题翻译：制造半导体器件的方法，半导体器件，电子仪器，半导体器件制造设备和存储介质
公开(公告)号：US20110049718A1
公开(公告)日：2011-03-03
申请号：US12864824
申请日：2009-01-20
申请人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato , Junichi Koike , Koji Neishi
发明人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato , Junichi Koike , Koji Neishi
IPC分类号： H01L23/48 , H01L21/768 , B05C13/02
CPC分类号： C23C16/40 , C23C28/00 , C23C28/322 , C23C28/345 , H01L21/28562 , H01L21/76814 , H01L21/76831 , H01L21/76844
摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.
摘要翻译：当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰而在铜布线的表面上不允许生成氧化锰。此后，铜嵌入凹槽中。

15. 发明授权

US08242015B2 Film forming method and film forming apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08242015B2
公开(公告)日：2012-08-14
申请号：US12631556
申请日：2009-12-04
申请人： Kenji Matsumoto , Hitoshi Itoh , Koji Neishi , Junichi Koike
发明人： Kenji Matsumoto , Hitoshi Itoh , Koji Neishi , Junichi Koike
IPC分类号： H01L21/4763
CPC分类号： C23C16/045 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/45525 , C23C16/45531 , C23C16/56 , H01L21/28562 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76855 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.
摘要翻译：在待处理物体的表面上，通过使用含Mn的源气体（或含Mn源气体，和含有Mn的源气体），通过热处理（CVD或ALD）形成含Mn的薄膜或含CuMn的合金薄膜含Cu气体）和含氧气体（例如水蒸气）作为处理气体。含Mn薄膜或含CuMn合金薄膜可以形成在形成在待处理物体表面上的细凹槽中的高阶覆盖。

16. 发明申请

US20130136859A1 FILM FORMING METHOD AND PROCESSING SYSTEM 有权
标题翻译：电影制作方法与处理系统
公开(公告)号：US20130136859A1
公开(公告)日：2013-05-30
申请号：US13807079
申请日：2011-06-24
申请人： Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
发明人： Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
IPC分类号： B05D5/12
CPC分类号： B05D5/12 , C23C16/40 , H01L21/76831 , H01L21/76846 , H01L21/76856 , H01L21/76861 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.
摘要翻译：成膜方法对其表面上具有绝缘层的目标物体进行成膜处理。该成膜方法包括：形成含有第一金属的第一薄膜的第一薄膜形成步骤，通过氧化第一薄膜形成氧化膜的氧化步骤和形成第二薄膜的第二薄膜形成步骤在氧化膜上含有第二金属。

17. 发明申请

US20110139272A1 PROCESS-GAS SUPPLY AND PROCESSING SYSTEM 审中-公开
标题翻译：过程气体供应和加工系统
公开(公告)号：US20110139272A1
公开(公告)日：2011-06-16
申请号：US12675222
申请日：2008-08-28
申请人： Kenji Matsumoto , Hitoshi Itoh
发明人： Kenji Matsumoto , Hitoshi Itoh
IPC分类号： F16K15/00
CPC分类号： C23C16/448 , C23C16/45561 , Y10T137/7837 , Y10T137/8593
摘要： A process-gas supply system 2 supplies a process gas diluted with a diluent gas to a gas using system 4. The process-gas supply system 2 includes a process gas tank 10, a diluent gas tank 12, a main gas duct 14 connecting the process gas tank 10 and the gas using system 4, and a diluent gas duct connecting the diluent gas tank 12 to the main gas duct. The respective main gas duct 14 and the diluent gas duct are provided with flow rate controllers FC1, FC2, and FC5. The diluent gas duct is connected to the main gas duct at a position on an immediately downstream side of one of a plurality of flow rate controllers other than the flow rate controller on the most downstream side. There is further provided a surplus-gas discharge duct 24 through which a surplus diluted process gas is discharged, the surplus-gas discharge duct 24 being connected to the main gas duct at a position on an immediately upstream side of one the flow rate controllers other than the flow rate controller on the most upstream side.
摘要翻译：处理气体供给系统2将用稀释气体稀释的处理气体供给到气体使用系统4.处理气体供给系统2包括处理气体罐10，稀释气体罐12，连接处理气罐10和气体使用系统4，以及将稀释气罐12连接到主气体管道的稀释气体管道。相应的主气体管道14和稀释气体管道设有流量控制器FC1，FC2和FC5。稀释气体管道在除了最下游侧的流量控制器之外的多个流量控制器之一的紧下游侧的位置处与主气体管道连接。还设置有多余的排气管24，多余的稀释处理气体通过该剩余气体排出管24排出，剩余气体排出管24在一个流量控制器其他的紧邻上游侧的位置连接到主气体管道比最上游侧的流量控制器。

18. 发明授权

US09266146B2 Film forming method and processing system 有权
标题翻译：成膜方法及加工系统
公开(公告)号：US09266146B2
公开(公告)日：2016-02-23
申请号：US13807079
申请日：2011-06-24
申请人： Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
发明人： Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
IPC分类号： C23C16/00 , B05D5/12 , C23C16/40 , H01L21/768 , H01L23/532
CPC分类号： B05D5/12 , C23C16/40 , H01L21/76831 , H01L21/76846 , H01L21/76856 , H01L21/76861 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.
摘要翻译：成膜方法对其表面上具有绝缘层的目标物体进行成膜处理。该成膜方法包括：形成含有第一金属的第一薄膜的第一薄膜形成步骤，通过氧化第一薄膜形成氧化膜的氧化步骤和形成第二薄膜的第二薄膜形成步骤在氧化膜上含有第二金属。

19. 发明申请

US20130017328A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 失效
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20130017328A1
公开(公告)日：2013-01-17
申请号：US13616308
申请日：2012-09-14
申请人： Hidenori MIYOSHI , Hitoshi Itoh , Hiroshi Sato
发明人： Hidenori MIYOSHI , Hitoshi Itoh , Hiroshi Sato
IPC分类号： C23C16/06
CPC分类号： H01L21/76814 , C23C16/045 , C23C16/401 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3105 , H01L21/32051 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.
摘要翻译：成膜方法包括在成膜装置的处理室内配置有形成有绝缘膜的晶片的步骤，以及将含有硅原子的复合气体和供给OH基团的气体供给到表面改性工序处理室，使得Si-OH基形成在绝缘膜的表面上。成膜方法还包括将含有含锰材料的成膜气体供给到处理室中的成膜步骤，使得在Si-OH基团上具有的绝缘膜的表面上形成含锰膜通过CVD法形成。

20. 发明授权

US08765221B2 Film forming method and film forming apparatus 失效
标题翻译：成膜方法和成膜装置
公开(公告)号：US08765221B2
公开(公告)日：2014-07-01
申请号：US13616308
申请日：2012-09-14
申请人： Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
发明人： Hidenori Miyoshi , Hitoshi Itoh , Hiroshi Sato
IPC分类号： C23C16/40
CPC分类号： H01L21/76814 , C23C16/045 , C23C16/401 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3105 , H01L21/32051 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.
摘要翻译：成膜方法包括在成膜装置的处理室内配置有形成有绝缘膜的晶片的步骤，以及将含有硅原子的复合气体和供给OH基团的气体供给到表面改性工序处理室，使得Si-OH基形成在绝缘膜的表面上。成膜方法还包括将含有含锰材料的成膜气体供给到处理室中的成膜步骤，使得在Si-OH基团上具有的绝缘膜的表面上形成含锰膜通过CVD法形成。

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