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    • 13. 发明授权
    • Thienylazole compound and thienotriazolodiazepine compound
    • 噻吩唑化合物和噻吩并三唑并噻嗪类化合物
    • US5760032A
    • 1998-06-02
    • US750025
    • 1996-11-22
    • Hiroshi KitajimaSyuji EharaHideaki SatoMinoru MoriwakiKenichi Onishi
    • Hiroshi KitajimaSyuji EharaHideaki SatoMinoru MoriwakiKenichi Onishi
    • C07D409/04C07D409/14C07D495/14A61K31/55C07D491/00C07D513/00C07D515/00
    • C07D409/14C07D409/04C07D495/14
    • Thienylazole compounds (I) and thienotriazolodiazepine compounds (II) of the formulas ##STR1## wherein R.sup.1 and R.sup.2 are hydrogen, halogen, C.sub.1 -C.sub.5 alkyl and the like; --A.dbd.B-- is --N.dbd.N-- and the like; R.sup.3 and R.sup.19 are hydrogen, C.sub.1 -C.sub.5 alkyl and the like; Y is --NHCO--, --NHCONH--, --NHCOO-- and the like; Z.sup.1 and Z.sup.2 are aryl, heteroaryl and the like; Ar is halogen-substituted phenyl and the like; and m is 0 or an integer of 1-5. The compounds of the present invention have CCK antagonistic action and gastrin antagonistic action, particularly potent antagonistic action against CCK-A receptor, and are useful as agents for the prophylaxis and treatment of central and peripheral nervous system diseases (e.g., anxiety, schizophrenia, and the like) and digestive diseases (e.g., pancreatitis, gastric ulcer, enterelcosis, irritable bowel syndrome, constipation, and the like).
    • PCT No.PCT / JP95 / 01071 Sec。 371日期:1996年11月22日 102(e)日期1996年11月22日PCT归档1995年6月1日PCT公布。 公开号WO95 / 32964 日期:1995年12月7日式(I)其中R 1和R 2为氢,卤素,C 1 -C 5烷基等的噻吩唑化合物(I)和噻吩并三唑并二氮杂化合物(Ⅱ) -A = B-是-N = N-等; R3和R19是氢,C1-C5烷基等; Y是-NHCO-,-NHCONH-,-NHCOO-等; Z 1和Z 2是芳基,杂芳基等; Ar是卤素取代的苯基等; m为0或1-5的整数。 本发明的化合物具有CCK拮抗作用和胃泌素拮抗作用,特别是针对CCK-A受体的强效拮抗作用,可用作预防和治疗中枢和周围神经系统疾病(例如焦虑,精神分裂症和 类似物)和消化疾病(例如胰腺炎,胃溃疡,入侵性肠易激综合征,便秘等)。
    • 15. 发明授权
    • Laser speckle velocity-measuring apparatus
    • 激光斑点速度测量仪
    • US4912519A
    • 1990-03-27
    • US207864
    • 1988-06-17
    • Tomio YoshidaNobuo NakatsukaHiroshi KitajimaTsukasa Yamashita
    • Tomio YoshidaNobuo NakatsukaHiroshi KitajimaTsukasa Yamashita
    • G01P3/80
    • G01P3/806
    • There is provided a laser speckle velocity-measuring apparatus comprising: a semiconductor laser to irradiate the light to a moving object; first and second photo sensing devices whose light receiving points are arranged in the moving direction of the objects at a predetermined distance so as to be away from each other; a clock signal generating and control circuit for determining a clock frequency of the clock signal so that the number of clocks of the clock signal is always set to a constant value when the delay time of the photo sensing signal of the second photo sensing device for the photo sensing signal of the first photo sensing device is measured by the clock signals; and an arithmetic operating circuit for counting the clock signals and calculating the length, moving distance, or velocity of the object on the basis of the count value. With this apparatus, the detecting time of the length or velocity of the moving object can be reduced and the measuring processes can be performed in a real-time manner.
    • 提供了一种激光散斑速度测量装置,包括:将光照射到移动物体的半导体激光器; 第一和第二感光装置,其光接收点沿物体的移动方向以预定距离布置成彼此远离; 时钟信号发生和控制电路,用于确定时钟信号的时钟频率,使得当第二感光装置的感光信号的延迟时间用于时钟信号的延迟时间时,时钟信号的时钟数总是设置为恒定值 第一感光装置的感光信号由时钟信号测量; 以及算术运算电路,用于根据计数值对时钟信号进行计数并计算物体的长度,移动距离或速度。 利用该装置,可以减少移动物体的长度或速度的检测时间,并且可以实时地进行测量处理。
    • 19. 发明授权
    • Semiconductor substrate and semiconductor device employing the same
    • 半导体衬底和采用该半导体衬底的半导体器件
    • US5838058A
    • 1998-11-17
    • US767039
    • 1996-12-11
    • Hiroshi KitajimaAkiyoshi Kobayashi
    • Hiroshi KitajimaAkiyoshi Kobayashi
    • C30B29/06H01L21/02H01L21/027H01L21/265H01L21/266H01L21/336H01L21/822H01L29/04H01L29/10H01L29/93
    • H01L21/26586H01L21/266H01L21/822H01L29/045H01L29/1079H01L29/1083H01L29/6659
    • In the vicinity of the (100) plane, planar channeling by (100) type crystal planes, which are (011) plane and (011) plane according to the (100) surface plane, degrades uniformity of ion implantation. Therefore, a major surface of the substrate is established at a plane perpendicular to a crystal orientation forming an angle greater than or equal to 3.5.degree. with two planes perpendicularly intersecting the (100) plane. Namely, in consideration of fluctuation in setting to an ion implantation device and ion implantation angle, the substrate having surface orientation within a range 104 is employed. Also, by limiting the orientation to be less than or equal to 10.degree. from the (100) plane, ion implantation can be performed perpendicularly to the substrate without modifying the process condition. The result of the foregoing is a semiconductor substrate which will never cause planar channeling even when ion implantation is performed in a perpendicular direction to the surface of a semiconductor substrate of silicon.
    • 在(100)面附近,根据(100)表面平面通过(100)型晶面((0 + E,ovs 1 + EE 1)面和(011)面)进行平面沟道降低均匀性 的离子注入。 因此,在垂直于晶体取向的平面上形成基板的主表面,形成大于或等于3.5°的角度,其中两个垂直于(100)平面相交的平面。 也就是说,考虑到离子注入装置的设定波动和离子注入角度,采用表面取向在104范围内的基板。 此外,通过将取向从(100)面限制为10°,可以在不改变工艺条件的情况下垂直于衬底进行离子注入。 上述结果是即使在与硅的半导体衬底的表面垂直的方向上进行离子注入也不会引起平面沟道的半导体衬底。