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11. 发明授权

US06709910B1 Method for reducing surface protrusions in the fabrication of lilac films 有权
标题翻译：淡紫膜制造中减少表面突起的方法
公开(公告)号：US06709910B1
公开(公告)日：2004-03-23
申请号：US10273549
申请日：2002-10-18
申请人： Mark A. Crowder , Apostolos T. Voutsas , Masahiro Adachi
发明人： Mark A. Crowder , Apostolos T. Voutsas , Masahiro Adachi
IPC分类号： H01L21336
CPC分类号： H01L21/02675 , H01L21/2022 , H01L21/2026
摘要： A system and method are provided for reducing film surface protrusions in the fabrication of LILAC films. The method comprises: forming an amorphous film with a first thickness; annealing the film using a LILAC process, with beamlets having a width in the range of 3 to 10 microns; in response to annealing, forming protrusions on the film surface; optionally oxidizing the film surface; thinning the film; and, in response to thinning the film, smoothing the film surface. Typically, the film surface is smoothed to a surface flatness of 300 Å, or less. In some aspects of the method, oxidizing the film surface includes oxidizing the film surface to a depth. Then, thinning the film includes thinning the film to a third thickness equal to the first thickness minus the depth.
摘要翻译：提供了一种用于在LILAC膜的制造中减少膜表面突起的系统和方法。该方法包括：形成具有第一厚度的非晶膜; 使用LILAC工艺对膜进行退火，其中子束的宽度在3至10微米的范围内; 响应于退火，在膜表面上形成突起; 可选地氧化膜表面; 弄薄膜; 并且，为了使薄膜变薄，平滑膜表面。通常，膜表面平滑至300或更小的表面平坦度。在该方法的一些方面，氧化膜表面包括将膜表面氧化至深度。然后，使薄膜变薄包括将薄膜变薄至等于第一厚度减去深度的第三厚度。

12. 发明授权

US6111469A Charge pumping circuit and PLL frequency synthesizer 有权
标题翻译：充电泵浦电路和PLL频率合成器
公开(公告)号：US6111469A
公开(公告)日：2000-08-29
申请号：US137144
申请日：1998-08-20
申请人： Masahiro Adachi
发明人： Masahiro Adachi
IPC分类号： H03L7/093 , H03L7/089 , H03L7/18 , H03L7/085
CPC分类号： H03L7/0895 , H03L7/18
摘要： A charge pumping circuit includes a constant current source, a switch element, a first MOS transistor, a second MOS transistor, and a switching-off circuit. The constant current source generates and outputs a current having a constant current value. The switch element is turned on and outputs a current determined by the constant current source when an input signal is active. The first MOS transistor flows the current output from the switch element. The second MOS transistor constitutes a current mirror circuit together with the first MOS transistor, and outputs a current having a current value based on the current flowing through the first MOS transistor, as one of charge and discharge currents. The switching-off circuit turns off the second MOS transistor by charging or discharging the gate when the input signal is inactive.
摘要翻译：电荷泵浦电路包括恒流源，开关元件，第一MOS晶体管，第二MOS晶体管和关断电路。恒流源产生并输出具有恒定电流值的电流。当输入信号有效时，开关元件导通，输出由恒流源确定的电流。第一MOS晶体管流过开关元件的电流输出。第二MOS晶体管与第一MOS晶体管一起构成电流镜电路，并且将基于流经第一MOS晶体管的电流的电流值的电流输出为充放电电流之一。当输入信号无效时，关断电路通过对栅极充电或放电来关断第二MOS晶体管。

13. 发明授权

US6043512A Thin film semiconductor device and method for producing the same 失效
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US6043512A
公开(公告)日：2000-03-28
申请号：US925000
申请日：1997-09-05
申请人： Masahiro Adachi
发明人： Masahiro Adachi
IPC分类号： H01L21/20 , H01L21/336 , H01L29/423 , H01L29/786 , H01L29/78 , H01L21/236
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/66765 , H01L29/78618
摘要： A thin semiconductor film device according to the present invention includes an insulative substrate, a metal layer formed on the insulative substrate, and a metal oxide layer formed on the metal layer. The metal oxide layer is obtained from anodization of the metal layer. In a preferred embodiment, an insulation film of silicon oxide or silicon nitride is formed on the metal oxide layer, and a semiconductor layer obtained by crystallizing the amorphous silicon layer is formed on the insulation film.
摘要翻译：根据本发明的薄半导体膜器件包括绝缘衬底，形成在绝缘衬底上的金属层和形成在金属层上的金属氧化物层。金属氧化物层由金属层的阳极氧化获得。在优选实施例中，在金属氧化物层上形成氧化硅或氮化硅的绝缘膜，并且在绝缘膜上形成通过使非晶硅层结晶而获得的半导体层。

14. 发明授权

US4310871A Illuminating device for instrument 失效
标题翻译：仪器照明装置
公开(公告)号：US4310871A
公开(公告)日：1982-01-12
申请号：US90474
申请日：1979-11-01
申请人： Masahiro Adachi
发明人： Masahiro Adachi
IPC分类号： B60K37/00 , B60Q3/04 , G01D11/28
CPC分类号： B60Q3/044 , B60K37/00 , B60Q3/004 , G01D11/28
摘要： An illuminating device for an instrument of a vehicle or the like using a light guiding member for introducing outside light during the day time to illuminate the dial of the instrument clearly at a brightness matching with that of the scenery. An internal light source is provided to illuminate the same dial in a dark place.
摘要翻译：一种车辆用仪器等的照明装置，其使用导光部件，用于在白天引入外部光线，以与风景的亮度相匹配的亮度清晰地照亮仪器的刻度盘。提供内部光源以在黑暗的地方照亮相同的表盘。

15. 发明授权

US08917750B2 III-nitride semiconductor laser diode 有权
标题翻译： III族氮化物半导体激光二极管
公开(公告)号：US08917750B2
公开(公告)日：2014-12-23
申请号：US13328622
申请日：2011-12-16
申请人： Masahiro Adachi , Shinji Tokuyama , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Koji Katayama , Takatoshi Ikegami , Takao Nakamura
发明人： Masahiro Adachi , Shinji Tokuyama , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Koji Katayama , Takatoshi Ikegami , Takao Nakamura
IPC分类号： H01S5/00 , H01S5/343 , H01S5/32 , H01S5/20 , B82Y20/00 , H01S5/30 , H01S5/22
CPC分类号： H01S5/2004 , B82Y20/00 , H01S5/22 , H01S5/309 , H01S5/3202 , H01S5/34333 , H01S2301/18 , H01S2302/00
摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.
摘要翻译：提供能够以低阈值激光的III族氮化物半导体激光二极管。支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。在支撑基体的主表面上方设置有n型包层区域和p型包层区域。芯型半导体区域设置在n型包层区域和p型包层区域之间。芯半导体区域包括第一光导层，有源层和第二光导层。有源层设置在第一光导层和第二光导层之间。芯半导体区域的厚度不小于0.5μm。这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

16. 发明授权

US08693515B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08693515B2
公开(公告)日：2014-04-08
申请号：US13050330
申请日：2011-03-17
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01S5/223
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

17. 发明授权

US08653621B2 Nitride-based semiconductor light-emitting element 有权
公开(公告)号：US08653621B2
公开(公告)日：2014-02-18
申请号：US13054037
申请日：2010-06-18
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L31/102
摘要： A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.

18. 发明授权

US08306082B2 Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08306082B2
公开(公告)日：2012-11-06
申请号：US12846361
申请日：2010-07-29
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.
摘要翻译： III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。支撑基底包括六方晶III族氮化物半导体，并且具有半极性主表面，并且半导体区域设置在支撑基底的半极性主表面上。半导体区域包括第一导电型氮化镓基半导体的第一包覆层，第二导电型氮化镓基半导体的第二包覆层和有源层。第一包层，第二包覆层和有源层沿着正交轴线配置到半极性主表面。有源层包括氮化镓基半导体层。支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。激光结构包括第一表面和第二表面，并且第一表面与第二表面相对，并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

19. 发明授权

US08235603B2 Optoelectric conversion module, method for assembling same, and optoelectric information processor using same 有权
标题翻译：光电转换模块，其组装方法和使用其的光电信息处理器
公开(公告)号：US08235603B2
公开(公告)日：2012-08-07
申请号：US12738043
申请日：2009-03-19
申请人： Mitsuaki Tamura , Wataru Sakurai , Hideki Matsubara , Hideaki Toshioka , Kyouichirou Nakatsugi , Masahiro Adachi , Yasuhiro Okuda
发明人： Mitsuaki Tamura , Wataru Sakurai , Hideki Matsubara , Hideaki Toshioka , Kyouichirou Nakatsugi , Masahiro Adachi , Yasuhiro Okuda
IPC分类号： G02B6/36
CPC分类号： H01L31/0203 , G02B6/4201 , G02B6/4249 , G02B6/4253 , G02B6/4255 , G02B6/4292 , H01L2224/48227 , H01L2924/15311 , H01L2924/3011 , H01S5/02284 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： An object is to obtain a module in which an optical fiber can be inserted after a ferrule has been mounted on a circuit board. There is provided an optical module (100) in which at least a ferrule (33) and an electric component (57) are mounted on a circuit board (35) on which external electrodes (63) have been mounted; a fiber through-hole is formed in the ferrule (33) in a position in which the optoelectric conversion device (31) is mounted on one end surface and that corresponds to an active layer of an optoelectric conversion device (31); and the optoelectric conversion device (31) of the ferrule (33) is electrically connected to the electric component (57). In the ferrule (33), an opening in the one end face of the fiber through-hole that faces the optoelectric conversion device (31) is blocked by a transparent substance (61), and a portion that excludes the fiber through-hole at the other end surface is are monolithically covered with a molding resin (55).
摘要翻译：目的是获得在套圈已经安装在电路板上之后可以插入光纤的模块。提供了一种光学模块（100），其中至少一个套圈（33）和电气部件（57）安装在已经安装有外部电极（63）的电路板（35）上; 在光电转换装置（31）安装在一个端面上并与光电转换装置（31）的有源层相对应的位置中，在套圈（33）中形成光纤通孔。并且套圈（33）的光电转换装置（31）与电气部件（57）电连接。在套圈33中，与光电转换元件31相对的光纤通孔的一个端面的开口部被透明物质61阻挡，并且将不包括纤维通孔的部分另一个端面用模制树脂（55）整体地覆盖。

20. 发明申请

US20110175201A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III类氮化物半导体器件
公开(公告)号：US20110175201A1
公开(公告)日：2011-07-21
申请号：US12834977
申请日：2010-07-13
申请人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
发明人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
IPC分类号： H01L29/20
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。半导体区具有由III族氮化物晶体组成的表面。半导体区域掺杂有p型掺杂剂。表面是半极性表面和非极性表面之一。金属电极设置在表面上。在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

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