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11. 发明授权

US08238152B2 Memory device and manufacturing method the same 有权
标题翻译：存储器件和制造方法相同
公开(公告)号：US08238152B2
公开(公告)日：2012-08-07
申请号：US12711333
申请日：2010-02-24
申请人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
发明人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
IPC分类号： G11C11/34 , G11C11/00 , H01L51/00
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译：可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

12. 发明授权

US08030643B2 Memory device and manufacturing method the same 有权
标题翻译：存储器件和制造方法相同
公开(公告)号：US08030643B2
公开(公告)日：2011-10-04
申请号：US11389238
申请日：2006-03-27
申请人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
发明人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
IPC分类号： G06K19/06
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译：可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

13. 发明申请

US20060214008A1 Memory device and manufacturing method the same 有权
公开(公告)号：US20060214008A1
公开(公告)日：2006-09-28
申请号：US11389238
申请日：2006-03-27
申请人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
发明人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
IPC分类号： G06K19/06
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

14. 发明授权

US07358590B2 Semiconductor device and driving method thereof 失效
标题翻译：半导体装置及其驱动方法
公开(公告)号：US07358590B2
公开(公告)日：2008-04-15
申请号：US11370837
申请日：2006-03-09
申请人： Mikio Yukawa , Yoshinobu Asami , Ryoji Nomura
发明人： Mikio Yukawa , Yoshinobu Asami , Ryoji Nomura
IPC分类号： H01L29/00
CPC分类号： G11C13/0011 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L27/285 , Y10S257/928
摘要： A semiconductor device includes a memory with a simple structure, an inexpensive semiconductor device, a manufacturing method and a driving method thereof. One feature is that, in a memory which has a layer including an organic compound as a dielectric, by applying a voltage to a pair of electrodes, the state change caused by the precipitous change in volume (such as bubble generation) is generated between the pair of electrodes. Short-circuiting between a pair of electrodes is promoted by acting force based on this state change. Concretely, a bubble generating area is provided in the memory element to generate a bubble between the first conductive layer and the second conductive layer.
摘要翻译：半导体器件包括具有简单结构的存储器，廉价的半导体器件，其制造方法和驱动方法。一个特征在于，在具有包含有机化合物作为电介质的层的存储器中，通过向一对电极施加电压，在体积的急剧变化（例如气泡产生）引起的状态变化在一对电极。基于这种状态变化通过作用力促进一对电极之间的短路。具体地说，在存储元件中设置一个产生气泡的区域，以在第一导电层和第二导电层之间产生气泡。

15. 发明申请

US20060220252A1 Semiconductor device and driving method thereof 失效
标题翻译：半导体装置及其驱动方法
公开(公告)号：US20060220252A1
公开(公告)日：2006-10-05
申请号：US11370837
申请日：2006-03-09
申请人： Mikio Yukawa , Yoshinobu Asami , Ryoji Nomura
发明人： Mikio Yukawa , Yoshinobu Asami , Ryoji Nomura
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： G11C13/0011 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L27/285 , Y10S257/928
摘要： The present invention provides a semiconductor device including a memory with a simple structure, an inexpensive semiconductor device, a manufacturing method and a driving method thereof. One feature is that, in a memory which has a layer including an organic compound as a dielectric, by applying a voltage to a pair of electrodes, the state change caused by the precipitous change in volume (such as bubble generation) is generated between the pair of electrodes. Short-circuiting between a pair of electrodes is promoted by acting force based on this state change. Concretely, a bubble generating area is provided in the memory element to generate a bubble between the first conductive layer and the second conductive layer.
摘要翻译：本发明提供一种包括具有简单结构的存储器，便宜的半导体器件，其制造方法和驱动方法的半导体器件。一个特征在于，在具有包含有机化合物作为电介质的层的存储器中，通过向一对电极施加电压，在体积的急剧变化（例如气泡产生）引起的状态变化在一对电极。基于这种状态变化通过作用力促进一对电极之间的短路。具体地说，在存储元件中设置一个产生气泡的区域，以在第一导电层和第二导电层之间产生气泡。

16. 发明授权

US08101943B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08101943B2
公开(公告)日：2012-01-24
申请号：US11918611
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

17. 发明授权

US08865511B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08865511B2
公开(公告)日：2014-10-21
申请号：US13295304
申请日：2011-11-14
申请人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
IPC分类号： H01L35/24 , H01L51/00 , H01L27/28 , H01L51/05 , G11C13/00 , B82Y10/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的一个目的是提供一种以高成本低成本制造高性能且高可靠性的存储器件和设置有存储器件的半导体器件的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

18. 发明申请

US20090065769A1 Semiconductor device amd method for manufacturing the same 有权
标题翻译：半导体装置的制造方法
公开(公告)号：US20090065769A1
公开(公告)日：2009-03-12
申请号：US11918611
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

19. 发明授权

US08227863B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08227863B2
公开(公告)日：2012-07-24
申请号：US11723481
申请日：2007-03-20
申请人： Shunpei Yamazaki , Yoshinobu Asami , Tamae Takano , Makoto Furuno
发明人： Shunpei Yamazaki , Yoshinobu Asami , Tamae Takano , Makoto Furuno
IPC分类号： H01L29/76
CPC分类号： H01L27/1237 , G11C16/349 , H01L21/28273 , H01L21/84 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11526 , H01L27/11546 , H01L27/1203 , H01L27/1214 , H01L29/42324 , H01L29/66825 , H01L29/78696 , H01L29/7881
摘要： A semiconductor layer having a channel formation region provided between a pair of impurity regions spaced from each other is provided, and a first insulating layer a floating gate, a second insulating layer, and a control gate are provided above the semiconductor layer. The semiconductor material forming the floating gate preferably has a band gap smaller than that of the semiconductor layer. The band gap of a channel formation region in the semiconductor material forming the floating gate is preferably smaller than that of the semiconductor layer by 0.1 eV or more.
摘要翻译：提供具有设置在彼此间隔开的一对杂质区之间的沟道形成区的半导体层，并且在半导体层上方设置有第一绝缘层，浮栅，第二绝缘层和控制栅。形成浮栅的半导体材料优选具有比半导体层小的带隙。形成浮栅的半导体材料中的沟道形成区的带隙优选比半导体层的带隙小0.1eV以上。

20. 发明授权

US08212302B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08212302B2
公开(公告)日：2012-07-03
申请号：US11723484
申请日：2007-03-20
申请人： Shunpei Yamazaki , Yoshinobu Asami , Tamae Takano , Makoto Furuno
发明人： Shunpei Yamazaki , Yoshinobu Asami , Tamae Takano , Makoto Furuno
IPC分类号： H01L29/76
CPC分类号： H01L29/42324 , H01L29/513 , H01L29/7883 , H01L29/7885
摘要： A nonvolatile semiconductor memory device which is superior in writing property and charge holding property, including a semiconductor substrate in which a channel formation region is formed between a pair of impurity regions, and a first insulating layer, a floating gate, a second insulating layer, and a control gate over the semiconductor substrate. The floating gate includes at least two layers. It is preferable that a band gap of a first layer included in the floating gate, which is in contact with the first insulating layer, be smaller than that of the semiconductor substrate. For example, it is preferable that the band gap of the semiconductor material for forming the floating gate be smaller than that of the channel formation region in the semiconductor substrate by 0.1 eV or more. This is because, by lowering the bottom energy level of a conduction band of the floating gate electrode than that of the channel formation region in the semiconductor substrate, a carrier injecting property and a charge holding property are improved.
摘要翻译：一种非易失性半导体存储器件，其特征在于具有在一对杂质区域之间形成沟道形成区域的半导体衬底和第一绝缘层，浮置栅极，第二绝缘层，以及半导体衬底上的控制栅极。浮栅包括至少两层。与第一绝缘层接触的浮栅中包含的第一层的带隙优选小于半导体衬底的带隙。例如，优选用于形成浮置栅极的半导体材料的带隙比半导体衬底中的沟道形成区域的带隙小0.1eV以上。这是因为通过降低浮置栅电极的导带的底部能级比半导体衬底中的沟道形成区的底部能级降低，因此提高了载流子注入性和电荷保持性。

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