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11. 发明授权

US06846718B1 Method for producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US06846718B1
公开(公告)日：2005-01-25
申请号：US09857803
申请日：2000-10-13
申请人： Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
发明人： Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.
摘要翻译：一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理加工型炉。优选地，首先进行RTA装置的热处理。通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

12. 发明授权

US06362076B1 Method of fabricating an SOI wafer by hydrogen ion delamination without independent bonding heat treatment 失效
标题翻译：通过氢离子脱层制造SOI晶片的方法，而无需独立的结合热处理
公开(公告)号：US06362076B1
公开(公告)日：2002-03-26
申请号：US09295296
申请日：1999-04-20
申请人： Yukio Inazuki , Hiroji Aga , Norihiro Kobayashi , Kiyoshi Mitani
发明人： Yukio Inazuki , Hiroji Aga , Norihiro Kobayashi , Kiyoshi Mitani
IPC分类号： H01L21324
CPC分类号： H01L21/3247 , H01L21/76251 , H01L21/76254
摘要： There is disclosed a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a surface of an SOI layer is not polished but is subjected to heat treatment in a reducing atmosphere containing hydrogen after a bonding heat treatment, a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a surface of an SOI layer is not polished but subjected to heat treatment in a reducing atmosphere containing hydrogen after delaminating heat treatment, and a SOI wafer fabricated by the methods. There are provided a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination is removed and surface roughness is improved without polishing, so that uniform thickness of the SOI layer can be achieved, and to simplify the process therefor.
摘要翻译：公开了一种通过氢离子分层方法制造SOI晶片的方法，其中SOI层的表面未被研磨，但在接合热处理后在含氢的还原气氛中进行热处理，制造SOI的方法晶片，其中SOI层的表面未经抛光但在分层热处理后的含氢还原气氛中进行热处理，以及通过该方法制造的SOI晶片。提供了一种通过氢离子分层方法制造SOI晶片的方法，其中去除了分层之后残留在SOI层表面上的损伤层，并且在没有抛光的情况下提高了表面粗糙度，使得SOI层的均匀厚度可以实现并简化其过程。

13. 发明授权

US06284628B1 Method of recycling a delaminated wafer and a silicon wafer used for the recycling 有权
公开(公告)号：US06284628B1
公开(公告)日：2001-09-04
申请号：US09295089
申请日：1999-04-20
申请人： Susumu Kuwahara , Kiyoshi Mitani , Hiroji Aga , Masae Wada
发明人： Susumu Kuwahara , Kiyoshi Mitani , Hiroji Aga , Masae Wada
IPC分类号： H01L2130
CPC分类号： H01L21/02032 , H01L21/2007 , H01L21/76254 , Y10S438/959 , Y10S438/977
摘要： There is disclosed a method of recycling a delaminated wafer produced as a by-product in producing an SOI wafer according to a hydrogen ion delaminating method by reprocessing it for reuse as a silicon wafer, wherein at least polishing of the delaminated wafer for removing of a step in the peripheral part of the delaminated wafer and heat treatment in a reducing atmosphere containing hydrogen are conducted as the reprocessing. There are provided a method of appropriately reprocessing a delaminated wafer produced as a by-product in a hydrogen ion delaminating method to reuse it as a silicon wafer actually, and particularly, a method of reprocessing an expensive wafer such as an epitaxial wafer many times for reuse, to improve productivity of SOI wafer having a high quality SOI layer, and to reduce producing cost.

14. 发明授权

US6140210A Method of fabricating an SOI wafer and SOI wafer fabricated thereby 有权
标题翻译：制造SOI晶片和SOI晶片的方法
公开(公告)号：US6140210A
公开(公告)日：2000-10-31
申请号：US159856
申请日：1998-09-24
申请人： Hiroji Aga , Kiyoshi Mitani , Yukio Inazuki
发明人： Hiroji Aga , Kiyoshi Mitani , Yukio Inazuki
IPC分类号： H01L21/265 , H01L21/02 , H01L21/762 , H01L27/12 , H01L21/30
CPC分类号： H01L21/76251 , H01L21/76254
摘要： In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form a fine bubble layer (enclosed layer) within the wafer; the ion-implanted silicon wafer is superposed on the other silicon wafer such that the ion-implanted surface comes into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed in order to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, in order to form a thin film to thereby obtain an SOI wafer. In the method, a defect layer at the delaminated surface of the thus-obtained SOI wafer is removed to a depth of 200 nm or more through vapor-phase etching, and then mirror polishing is performed. Therefore, the obtained SOI wafer has an extremely low level of defects and a high thickness uniformity.
摘要翻译：在制造SOI晶片的方法中，在两个硅晶片中的至少一个的表面上形成氧化物膜; 将氢离子或稀有气体离子注入到两个硅晶片之一的上表面中，以便在晶片内形成微小的气泡层（封闭层）; 离子注入硅晶片叠置在另一个硅晶片上，使得离子注入表面通过氧化膜与另一硅晶片的表面紧密接触; 为了形成薄膜以获得SOI晶片，进行热处理，以便在使用微细气泡层作为分层平面的情况下使离子注入的晶片的一部分分层。在该方法中，通过气相蚀刻将由此获得的SOI晶片的分层表面的缺陷层去除至200nm以上的深度，然后进行镜面抛光。因此，所获得的SOI晶片具有极低的缺陷水平和高的厚度均匀性。

15. 发明授权

US07320929B2 Method of fabricating SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US07320929B2
公开(公告)日：2008-01-22
申请号：US10522413
申请日：2003-07-16
申请人： Hiroji Aga , Kiyoshi Mitani
发明人： Hiroji Aga , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/265 , H01L21/26506 , H01L21/76224 , H01L21/76254
摘要： In order to adjust thickness of a bonded silicon single crystal film 15 depending of thickness of an SOI layer 5 to be obtained, depth of formation d1+tx of a separatory ion implanted layer 4, measured from a first main surface J, in the separatory ion implanted layer formation step is adjusted through energy of the ion implantation. Dose of the ion implantation is set smaller as the depth of formation measured from the first main surface J becomes smaller. A smaller dose results in a smaller surface roughness of the separation surface, and makes it possible to reduce polishing stock removal of the separation surface of the bonded silicon single crystal film in the planarization step. Uniformity in the thickness of the SOI layer can consequently be improved even for the case where a thin SOI layer has to be formed. The present invention is therefore successful in providing a method of fabricating an SOI wafer capable of suppressing variations in the intra-wafer and inter-wafer uniformity of the thickness of the SOI layer to a sufficiently low level, even for the case where a required level of the thickness of the SOI layer is extremely small.
摘要翻译：为了根据所获得的SOI层5的厚度来调整键合硅单晶膜15的厚度，从第一主表面J测量的分离离子注入层4的形成深度d 1 + t x，通过离子注入的能量来调节分离离子注入层形成步骤。随着从第一主表面J测量的深度变小，离子注入的剂量变小。较小的剂量导致分离表面的较小的表面粗糙度，并且使得可以在平坦化步骤中减少接合的硅单晶膜的分离表面的抛光原料去除。因此，即使在必须形成薄的SOI层的情况下，也可以提高SOI层的厚度的均匀性。因此，本发明成功地提供了一种制造SOI晶片的方法，其能够将SOI层的厚度的晶片内和晶片间均匀度的均匀度抑制到足够低的水平，即使在所需的水平的情况下的SOI层的厚度非常小。

16. 发明申请

US20060051945A1 Method for manufacturing soi wafer and soi wafer 有权
标题翻译：制造硅晶片和硅晶片的方法
公开(公告)号：US20060051945A1
公开(公告)日：2006-03-09
申请号：US10544374
申请日：2004-02-13
申请人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
IPC分类号： H01L21/425 , H01L21/22
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.
摘要翻译：本发明提供一种制造SOI晶片的方法，其至少包括通过从其一个主表面将氧离子注入硅晶片来形成氧离子注入层的步骤，将硅晶片进行氧化膜形成热处理将氧离子注入层转换为埋入氧化膜，由此在埋入氧化膜上制造具有SOI层的SOI晶片，其中，当在硅晶片中形成掩埋氧化膜时，形成掩埋氧化膜，使得其厚度比所制造的SOI晶片的埋入氧化膜的厚度厚，然后对其中形成较厚掩埋氧化膜的硅晶片进行热处理，以减小掩埋氧化物的厚度电影。因此，可以提供一种制造SOI晶片的方法，其中具有膜厚度薄且完整性高的掩埋氧化膜的高质量SOI晶片和结晶度和表面质量非常好的SOI层可以使用SIMOX法生产。

17. 发明授权

US07560313B2 SOI wafer and method for producing the same 有权
标题翻译： SOI晶片及其制造方法
公开(公告)号：US07560313B2
公开(公告)日：2009-07-14
申请号：US10473352
申请日：2002-03-29
申请人： Hiroji Aga , Kiyoshi Mitani
发明人： Hiroji Aga , Kiyoshi Mitani
IPC分类号： H01L21/00
CPC分类号： H01L21/76254
摘要： The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI wafer where a surface of a base wafer is exposed is narrower than 1 mm and a density of pit-shaped defects having a size of 0.19 μm or more existing in a surface of a SOI layer detected by a LPD inspection is 1 counts/cm2 or less, and also provides a method for producing the SOI wafer. Thereby, there is provided a SOI wafer produced by an ion implantation delamination method wherein generation of SOI islands generated in delamination can be suppressed and a defect density of LPDs existing in a surface of the SOI wafer can be reduced, and a method for producing the same, so that device failure can be reduced.
摘要翻译：本发明提供一种通过离子注入分层方法制造的SOI晶片，其中在SOI晶片的边缘部分中产生的露台部分中的SOI岛区域的宽度基底晶片暴露的距离窄于1mm，存在于通过LPD检查检测的SOI层的表面中的具有0.19μm以上的尺寸的凹坑状缺陷的密度为1个/ cm 2以下，并且还提供了SOI晶片的制造方法。因此，提供了通过离子注入分层方法制造的SOI晶片，其中可以抑制在分层中产生的SOI岛的产生，并且可以减少存在于SOI晶片的表面中的LPD的缺陷密度，以及制造相同，从而可以减少设备故障。

18. 发明授权

US07524744B2 Method of producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US07524744B2
公开(公告)日：2009-04-28
申请号：US10544374
申请日：2004-02-13
申请人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyotaka Takano , Kiyoshi Mitani
IPC分类号： H01L21/425
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.
摘要翻译：本发明提供一种制造SOI晶片的方法，其至少包括通过从其一个主表面将氧离子注入硅晶片来形成氧离子注入层的步骤，将硅晶片进行氧化膜形成热处理将氧离子注入层转换为埋入氧化膜，由此在埋入氧化膜上制造具有SOI层的SOI晶片，其中，当在硅晶片中形成掩埋氧化膜时，形成掩埋氧化膜，使得其厚度比所制造的SOI晶片的埋入氧化膜的厚度厚，然后对其中形成较厚掩埋氧化膜的硅晶片进行热处理，以减小掩埋氧化物的厚度电影。因此，可以提供一种制造SOI晶片的方法，其中具有膜厚度薄且完整性高的掩埋氧化膜的高品质SOI晶片和结晶度和表面质量非常好的SOI层使用SIMOX法生产。

19. 发明授权

US07176102B2 Method for producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US07176102B2
公开(公告)日：2007-02-13
申请号：US10948234
申请日：2004-09-24
申请人： Hiroji Aga , Naota Tate , Susumu Kuwabara , Kiyoshi Mitani
发明人： Hiroji Aga , Naota Tate , Susumu Kuwabara , Kiyoshi Mitani
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.
摘要翻译：一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理加工型炉。优选地，首先进行RTA装置的热处理。通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

20. 发明授权

US06884696B2 Method for producing bonding wafer 有权
标题翻译：接合晶片的制造方法
公开(公告)号：US06884696B2
公开(公告)日：2005-04-26
申请号：US10380979
申请日：2002-07-09
申请人： Hiroji Aga , Shinichi Tomizawa , Kiyoshi Mitani
发明人： Hiroji Aga , Shinichi Tomizawa , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762 , H01L21/8238 , H01L27/12
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing a bonded wafer by the ion implantation delamination method includes at least a step of bonding a bond wafer having a micro bubble layer formed by gaseous ion implantation and a base wafer serving as a support substrate and a step of delaminating the bond wafer at the micro bubble layer as a border to form a thin film on the base wafer. After the delamination of the bond wafer, the bonded wafer is subjected to a heat treatment in an atmosphere of an inert gas, hydrogen or a mixed gas thereof, then the bonded wafer is subjected to thermal oxidation to form a thermal oxide film on the surface of the thin film, and then the thermal oxide film is removed to reduce thickness of the thin film.
摘要翻译：通过离子注入分层方法制造接合晶片的方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与作为支撑基板的基底晶片接合的步骤和将接合晶片分层的步骤在微气泡层作为边界在基底晶片上形成薄膜。在接合晶片分层后，在惰性气体，氢气或其混合气体的气氛中对接合的晶片进行热处理，然后将接合的晶片进行热氧化，以在表面上形成热氧化膜的薄膜，然后去除热氧化膜以减小薄膜的厚度。

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